AD8510ARM [ADI]
IC OP-AMP, 1800 uV OFFSET-MAX, 8 MHz BAND WIDTH, PDSO8, MICRO, SOIC-8, Operational Amplifier;
| 型号： | AD8510ARM |
| 厂家： | 
ADI |
| 描述： | IC OP-AMP, 1800 uV OFFSET-MAX, 8 MHz BAND WIDTH, PDSO8, MICRO, SOIC-8, Operational Amplifier 放大器 光电二极管 |
| 文件： | 总5页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY TECHNICAL DATA
Precision Low Noise JFET
a
Operational Amplifiers
Preliminary Technical Data
AD8510/AD8512/AD8513
AD8513 is available in the 14 lead TSSOP and
narrow SOIC packages. MSOP and TSSOP
versions are available in tape and reel only.
FEATURES
Low Offset Voltage: 400m V max
Low TcVos: 2uv/° C typ
Low input bias current: 30pA max.
Dual-Supply Operation: ± 5V to ± 15V Volts
Low Noise: 8 nV/ Hz
PIN CONFIGURATIONS
Fast settling: 10V step to 0.01% in 600ns
No Phase Reversal
Unity Gain Stable
8-Lead MSOP
(RM-8)
8-Lead SO
(R-8)
APPLICATIONS
Instrumentation
Multi-pole filters
Precision current measurement
Photo-diode amplifiers
Sensors
AD8512
AD8510
Audio
8-Lead SO
(R-8)
14-Lead TSSOP
(RU-14)
GENERAL DESCRIPTION
The AD8510, AD8512 and AD8513 are single, dual
and quad precision JFET amplifiers featuring low offset
voltage, low input bias current and low input voltage
and current noise.
AD8510
AD8513
The combination of low offsets, low noise and very
low input bias currents make these amplifiers especially
suitable for high impedance sensor amplification and
precise current measurements using shunts. Unlike
many older JFET amplifiers these parts do not suffer
from output phase reversal when input voltages exceed
the maximum common mode voltage range.
8-Lead MSOP
(RM-8)
14-Lead SO
(R-14)
AD8512
AD8513
The AD8510, AD8512 and AD8513 are specified
over the extended industrial (-40° to +125°C)
temperature range. The AD8510, single, and
AD8512, dual, are available in the 8 lead MSOP and
narrow SOIC surface mount packages. The
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, PO Box 9106, Norwood, MA 02062-9106,
USA
Tel: 617/329-4700
Fax: 617/326-8703
World Wide Web Site:http://www.analog.com
© Analog Devices, Inc., 2001
REV. Pr0 9/28/01
Ð1Ð
PRELIMINARY TECHNICAL DATA
AD8510/AD8512/AD8513
ELECTRICALCHARACTERISTICS (VS=±5V, VCM = 0V, TA=+25°C unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
INPUT CHARACTERISTICS
Offset Voltage (A Grade)
VOS
VOS
1
mV
mV
mV
mV
-40°< TA < +125°C
-40°< TA < +125°C
1.8
.4
Offset Voltage (B Grade)
Input Bias Current
0.8
IB
30
2
pA
nA
nA
-40°< TA < +85°C
-40°< TA < +125°C
30
Input Offset Current
IOS
25
1.6
13
pA
nA
nA
-40°< TA < +85°C
-40°< TA < +125°C
Input Voltage Range
-4
3.2
V
Common-Mode Rejection Ratio
CMRR
AVO
VCM = -3.5V to 3V
86
dB
Large Signal Voltage Gain
RL = 2 kW VO= -3V to 3V
150
200
3
V/mV
mV/°C
mV/°C
Offset Voltage Drift (A Grade)
Offset Voltage Drift (B Grade)
DVOS/DT
DVOS/DT
10
10
2
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
IL = 1mA
3.5
3.4
V
V
-40°C < TA < +125°C
Output Voltage Low
VOL
IL = 1mA
-4
V
-40°C < TA < +125°C
-3.4
V
Output Current
IOUT
±25
±35
mA
W
Closed Loop Output Impedance
ZOUT
f=10 kHz, AV = 1
tbd
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
ISY
VS = 2.7 V to 5.5 V
VO = 0V
86
dB
Supply Current/Amplifier
1.8
20
3
4
mA
mA
-40°< TA < +125°C
DYNAMIC PERFORMANCE
Slew Rate
SR
RL =2 kW
V/ms
Gain Bandwidth Product
Settling Time
GBP
ts
7.5
.3
MHz
ms
to 0.01%, 0V to 4V step
THD+Noise
THD+N
Øo
.0001
60
%
Phase Margin
degrees
NOISE PERFORMANCE
Voltage Noise Density
en
en
in
nV/ÖHz
nV/ÖHz
pA/ÖHz
f=1kHz
f=10kHz
f=1kHz
8
8
Voltage Noise Density
Current Noise Density
0.01
Ð2Ð
REV. Pr0 9/28/01
PRELIMINARY TECHNICAL DATA
AD8510/AD8512/AD8513
ELECTRICALCHARACTERISTICS (@ VS=±15.0V, VCM = 0V, TA=+25°C unless otherwise noted)
Parameter
Symbol Conditions
A Grade
Units
Min
Typ
Max
INPUT CHARACTERISTICS
Offset Voltage
(A Grade)
VOS
1
mV
mV
mV
mV
-40°< TA < +125°C
1.8
.4
Offset Voltage
(B Grade)
VOS
-40°< TA < +125°C
0.8
Input Bias Current
Input Offset Current
Input Voltage Range
IB
30
2
pA
nA
nA
-40°< TA < +85°C
-40°< TA < +125°C
30
IOS
25
1.6
13
pA
nA
nA
-40°< TA < +85°C
-40°< TA < +125°C
-13.5
86
13
V
Common-Mode Rejection Ratio
CMRR
AVO
VCM = -12.5V to 12.5V
dB
Large Signal Voltage Gain
VO= -13V to 13V,
150
200
V/mV
RL = 2 kW , VCM= 0V
Offset Voltage Drift (A Grade)
Offset Voltage Drift (B Grade)
DVOS/DT
DVOS/DT
3
2
10
10
mV/°C
mV/°C
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
IL = 1mA
13.5
13
V
V
V
IL = 10mA
-40°C to +125°C
12
Output Voltage Low
Output Voltage High
VOL
VOL
IL = 1mA
-13.5
-13
V
V
V
IL = 10mA
-40°C to +125°C
-12
Output Current
IOUT
±50
mA
Closed Loop Output Impedance
ZOUT
f=10 kHz, AV = 1
VS = 2.7 V to 5.5 V
tbd
W
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
ISY
86
dB
Supply Current/Amplifier
VO = 0V
1.8
20
3.5
4.5
mA
mA
-40°< TA < +125°C
DYNAMIC PERFORMANCE
Slew Rate
SR
RL =2 kW
V/ms
Gain Bandwidth Product
Settling Time
GBP
ts
7.5
.9
MHz
ms
to 0.01%, 0V to 10V step
THD+Noise
THD+N
Øo
.0001
60
%
Phase Margin
degrees
Ð3Ð
REV. Pr0 9/28/01
PRELIMINARY TECHNICAL DATA
AD8510/AD8512/AD8513
NOISE PERFORMANCE
Voltage Noise Density
en
en
in
nV/ÖHz
nV/ÖHz
pA/ÖHz
f=1kHz
f=10kHz
f=1kHz
8
8
Voltage Noise Density
Current Noise Density
0.015
ABSOLUTE MAXIMUM RATINGS 1
Package Type
q
q
JA
JC
Units
Supply voltage ..........................................................................±18V
Input Voltage.............................................................................. ±Vs
Output Short-Circuit Duration to Gnd2 ... Observe Derating Curves
Storage Temperature Range
R, RM, RU Package .......................................-65°C to +150°C
Operating Temperature Range
AD8510/AD8512/AD8513............................-40°C to +125°C
Junction Temperature Range
R, RM, RU Package .......................................-65°C to +150°C
Lead Temperature Range (Soldering, 60 Sec)........................+300°C
Electrostatic Discharge (HBM)…………………………...…2000V
8-Pin MSOP (RM)
8-Pin SOIC (R)
210
158
45
°C/W
°C/W
43
14-Pin TSSOP (RU)
14-Pin SOIC (R)
158
158
43
43
°C/W
°C/W
NOTES
1
Absolute maximum ratings apply at 25°C, unless otherwise noted.
2
q
is specified for the worst case conditions, i.e., q is specified for device soldered
JA
JA
in circuit board for surface mount packages.
ORDERING GUIDE
Model
AD8510ARM
AD8510AR
AD8510BR
AD8512ARM
AD8512AR
AD8512BR
AD8513ARU
AD8513AR
Temperature Range
-40°C to +125°C
Package Description
Package Option
Marking Code
B7A
8-Pin MSOP
8-Pin SOIC
8-Pin SOIC
8-Pin MSOP
8-Pin SOIC
8-Pin SOIC
14-Pin TSSOP
14-Pin SOIC
RM-8
R-8
R-8
RM-8
R-8
R-8
-40°C to +125°C
-40°C to +125°C
-40°C to +125°C
-40°C to +125°C
-40°C to +125°C
-40°C to +125°C
-40°C to +125°C
B8A
RU-14
R-14
Ð4Ð
REV. Pr0 9/28/01
PRELIMINARY TECHNICAL DATA
AD8510/AD8512/AD8513
8-Lead m SOIC
8-Lead SO
(R-8)
(RM-8)
14-Lead TSSOP
(RU-14)
14-Lead SO
(R-14)
Ð5Ð
REV. Pr0 9/28/01
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