AD8677AUJZ-REEL [ADI]
130 uV Maximum Offset Voltage Op Amp in TSOT; 130紫外最大失调电压运算放大器，采用TSOT
| 型号： | AD8677AUJZ-REEL |
| 厂家： | 
ADI |
| 描述： | 130 uV Maximum Offset Voltage Op Amp in TSOT |
| 文件： | 总16页 (文件大小：283K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
130 μV Maximum Offset Voltage
Op Amp in TSOT
AD8677
FEATURES
PIN CONFIGURATIONS
Low offset voltage: 130 μV max
Input offset drift: 1.5 μV/°C max
Low noise: 0.25 ꢀV p-p
OUT
V–
1
2
3
5
V+
AD8677
TOP VIEW
(Not to Scale)
+IN
4
–IN
High gain, CMRR and PSRR: 115 dB min
Low supply current: 1.1 mA
Figure 1. 5-Lead TSOT (UJ-5)
Wide supply voltage range: ±4 V to ±18 V operation
NULL
–IN
1
2
3
4
8
7
6
5
NULL
V+
APPLICATIONS
AD8677
TOP VIEW
Medical and industrial instrumentation
Sensors and controls
Thermocouple
+IN
V–
OUT
NC
(Not to Scale)
NC = NO CONNECT
RTDs
Strain bridges
Figure 2. 8-Lead SOIC_N (R-8)
Shunt current measurements
Precision filters
GENERAL DESCRIPTION
The AD8677 is the next generation of precision, ultralow offset
amplifiers. It builds on the high performance of the OP07 and
integrates lower power (1.1 mA typical), lower input bias
current (±1 nA maximum), and higher CMRR/PSRR (130 dB)
in the small TSOT package. Operation is fully specified from ±±
V to ±1± V supply.
The AD8677 provides higher accuracy than industry-standard
OP07-type amplifiers due to Analog Devices’ iPolar™ process,
which supports enhanced performance in a smaller footprint.
These performance enhancements include wider output swing,
lower power, and higher CMRR (common-mode rejection
ratio) and PSRR (power supply rejection ratio). The AD8677
maintains stability of offsets and gain virtually regardless of
variations in time or temperature. Excellent linearity and gain
accuracy can be maintained at high closed-loop gains.
The AD8677 is fully specified over the extended industrial tem-
perature range of −40°C to +12±°C. The AD8677 amplifier is
available in the tiny, ±-lead TSOT and the popular 8-lead,
narrow SOIC lead-free packages.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registeredtrademarks arethe property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Fax: 781.461.3113
www.analog.com
© 2005 Analog Devices, Inc. All rights reserved.
AD8677
TABLE OF CONTENTS
Features .............................................................................................. 1
Absolute Maximum Ratings ............................................................±
Thermal Resistance.......................................................................±
ESD Caution...................................................................................±
Typical Performance Characteristics ..............................................6
Outline Dimensions....................................................................... 13
Ordering Guide .......................................................................... 13
Applications....................................................................................... 1
General Description......................................................................... 1
Pin Configurations ........................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
REVISION HISTORY
11/05—Revision 0: Initial Version
Rev. 0 | Page 2 of 16
AD8677
SPECIFICATIONS
VS = ±±.0 V, TA = +2±°C, unless otherwise specified.
Table 1.
Parameter
Symbol
VOS
IB
Test Conditions/Comments
Min
Typ
40
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
130
350
1
μV
μV
nA
−40°C ≤ TA ≤ +125°C
Input Bias Current
0.2
1
nA
nA
nA
V
−40°C ≤ TA ≤ +125°C
−40°C ≤ TA ≤ +125°C
VCM = 3 V
Input Offset Current
IOS
0.1
1
1
Input Voltage Range
−3.5
120
+3.5
Common-Mode Rejection Ratio
CMRR
AVO
127
10000
0.5
dB
120
dB
−40°C ≤ TA ≤ +125°C
RL = 2 kΩ to ground, VO = 3 V
−40°C ≤ TA ≤ +125°C
Open-Loop Gain
1000
1000
V/mV
V/mV
μV/°C
1.4
ΔVOS/ΔT
−40°C ≤ TA ≤ +125°C
OUTPUT CHARACTERISTICS
Output Voltage Swing
VOUT
V
RL = 10 kΩ to ground
−40°C ≤ TA ≤ +125°C
RL = 2 kΩ to ground
−40°C ≤ TA ≤ +125°C
±3.95
±3.95
±3.9
±4.1
±4
V
V
V
±3.9
Short-Circuit Limit
Output Current
ISC
IO
27
15
mA
mA
VO = 3.5 V
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
ISY
115
110
130
1.1
dB
VS = ±4.0 V to ±18.0 V
−40°C ≤ TA ≤ +125°C
VO = 0 V
dB
Supply Current/Amplifier
1.25
1.7
mA
mA
−40°C ≤ TA ≤ +125°C
DYNAMIC PERFORMANCE
Slew Rate
SR
0.2
0.6
80
V/μs
RL = 10 kΩ
Gain Bandwidth Product
Phase Margin
GBP
MHz
Degrees
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
en p-p
en
0.1 Hz to 10 Hz
f = 1 kHz
0.28
10
μV p-p
nV/√Hz
pA/√Hz
in
f = 1 kHz
0.074
Rev. 0 | Page 3 of 16
AD8677
VS = ±1± V, TA = +2±°C, unless otherwise specified.
Table 2.
Parameter
Symbol
VOS
IB
Test Conditions/Comments
Min
Typ
45
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
130
350
1
μV
μV
nA
−40°C ≤ TA ≤ +125°C
Input Bias Current
0.2
1
nA
−40°C ≤ TA ≤ +125°C
−40°C ≤ TA ≤ +125°C
Input Offset Current
IOS
0.2
1
1
nA
nA
Input Voltage Range
Common-Mode Rejection Ratio
−13.5
120
120
+13.5
V
dB
dB
CMRR
AVO
VCM = 13.0 V
140
10000
0.5
−40°C ≤ TA ≤ +125°C
RL = 2 kΩ to ground, VO = 11 V
−40°C ≤ TA ≤ +125°C
−40°C ≤ TA ≤ +125°C
Open Loop Gain
1000
1000
V/mV
V/mV
μV/°C
Offset Voltage Drift
1.5
ΔVOS/ΔT
OUTPUT CHARACTERISTICS
Output Voltage Swing
VOUT
14
V
RL = 10 kΩ to ground
−40°C ≤ TA ≤ +125°C
RL = 2 kΩ to ground
−40°C ≤ TA ≤ +125°C
±13.95
±13.9
V
13.8
V
±13.75
±13.7
V
Short Circuit Limit
Output Current
ISC
IO
30
15
mA
mA
VO = 13.5 V
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
ISY
115
110
130
1.1
dB
VS = ±4.0 V to ±18.0 V
−40°C ≤ TA ≤ +125°C
VO = 0 V
dB
Supply Current/Amplifier
1.3
1.8
mA
mA
−40°C ≤ TA ≤ +125°C
DYNAMIC PERFORMANCE
Slew Rate
SR
0.2
0.6
80
V/μs
RL = 10 kΩ
Gain Bandwidth Product
Phase Margin
GBP
MHz
Degrees
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
en p-p
en
0.1 Hz to 10 Hz
f = 1 kHz
0.25
10
μV p-p
nV/√Hz
pA/√Hz
in
f = 1 kHz
0.074
Rev. 0 | Page 4 of 16
AD8677
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Table 3.
Parameter
Supply Voltage
Input Voltage
Differential Input Voltage
Output Short-Circuit Duration to GND
Storage Temperature Range
UJ-5, R Package
Operating Temperature Range
Junction Temperature Range
RM, R Package
Value
18 V
V Supply
0.7 V
Indefinite
−65°C to +150°C
−40°C to +125°C
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
−65°C to +150°C
+300°C
Table 4.
Lead Temperature (Soldering, 10 sec)
Package Type
θJA
θJC
61
43
Unit
°C/W
°C/W
5-Lead TSOT (UJ-5)
8-Lead SOIC (R-8)
207
158
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 5 of 16
AD8677
TYPICAL PERFORMANCE CHARACTERISTICS
50
45
40
35
30
25
20
15
10
5
V
= ±15V
V
= ±15V
S
S
45
40
35
30
25
20
15
10
5
0
0
–100 –80 –60 –40 –20
0
20
(µV)
40
60
80 100
0
0.15 0.30 0.45 0.60 0.75 0.90 1.05 1.20
V
TCV (µV/°C)
OS
OS
Figure 3. Input Offset Voltage Distribution
Figure 6. TCVOS vs. Number of Amplifiers
40
35
30
25
20
15
10
5
200
150
100
50
V
= ±5V
V
= ±15V
S
S
0
–50
–100
–150
–200
0
–100 –80 –60 –40 –20
0
20
40
60
80 100
–50
0
50
100
150
V
(µV)
TEMPERATURE (°C)
OS
Figure 4. Input Offset Voltage Distribution
Figure 7. Offset Voltage vs. Temperature
50
40
30
20
10
0
200
150
100
50
V
= ±5V
V
= ±5V
S
S
0
–50
–100
–150
–200
0
0.15
0.30
0.45
0.60
OS
0.75
0.90
1.05
–50
0
50
100
150
TCV (µV/°C)
TEMPERATURE (°C)
Figure 8. Offset Voltage vs. Temperature
Figure 5. TCVOS vs. Number of Amplifiers
Rev. 0 | Page 6 of 16
AD8677
1.6
1.4
1.2
1.0
0.8
0.6
0.4
–13.92
–13.94
–13.96
–13.98
–14.00
–14.02
–14.04
–14.06
–14.08
–14.10
V
R
= ±15V
= 10kΩ
S
L
V
= ±15V
S
V
= ±5V
S
–50
0
50
TEMPERATURE (°C)
100
150
150
150
–50
0
50
100
100
100
150
TEMPERATURE (°C)
Figure 9. Supply Current vs. Temperature
Figure 12. −VOUT vs. Temperature
14.40
14.35
14.30
14.25
14.20
14.15
14.10
–3.98
–4.00
–4.02
–4.04
–4.06
–4.08
–4.10
–4.12
–4.14
–4.16
V
= ±5V
= 10kΩ
S
R
V
R
= ±15V
= 10kΩ
S
L
L
–50
0
50
100
–50
0
50
150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 10. +VOUT vs. Temperature
Figure 13. −VOUT vs. Temperature
4.45
4.40
4.35
4.30
4.25
4.20
4.15
0
–0.1
–0.2
–0.3
–0.4
–0.5
V
R
= ±5V
= 10kΩ
S
V
= ±15V
S
L
–50
0
50
100
–50
0
50
150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 11. +VOUT vs. Temperature
Figure 14. Input Bias Current vs. Temperature
Rev. 0 | Page 7 of 16
AD8677
0
–0.05
–0.10
–0.15
–0.20
–0.25
–0.30
–0.35
150
140
130
120
V
= ±5V
S
V
= ±4V TO ±18V
S
–0.40
–50
0
50
100
150
150
150
–50
0
50
100
150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 15. Input Bias Current vs. Temperature
Figure 18. PSRR vs. Temperature
40
30
20
10
146
144
142
140
138
134
134
132
130
128
126
V
= ±15V
S
V
= ±15V
S
V
= ±5V
S
V
= ±5V
50
S
124
–50
–50
0
50
TEMPERATURE (°C)
100
150
0
100
TEMPERATURE (°C)
Figure 19. Short Circuit Current vs. Temperature
Figure 16. CMRR vs. Temperature
16000
14000
12000
10000
8000
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
R
= 2kΩ
L
V
= ±15V
S
V
= ±5V
S
6000
4000
2000
–50
0
50
TEMPERATURE (°C)
100
0
10
20
30
40
SUPPLY VOLTAGE (V)
Figure 17. Open-Loop Gain vs. Temperature
Figure 20. Supply Current vs. Total Supply Voltages
Rev. 0 | Page 8 of 16
AD8677
50
40
30
20
10
0
10
V
V
R
= ±15V
S
V
= ±15V
S
= 28mV
IN
=
∞
L
L
V
= +V
OUT
OH
C
= 20pF
G = +100
G = +10
V
= –V
OUT
OL
1
G = +1
–10
100
0.1
10
1k
10k
100k
1M
1M
12
0.01
0.1
1
10
100
FREQUENCY (Hz)
I
(mA)
LOAD
Figure 21. Output Voltage Swing vs. Load Current
Figure 24. Closed-Loop Gain vs. Frequency
50
40
30
20
10
0
V
V
R
C
= ±5V
V
= ±5V
S
S
= 28mV
IN
G = +100
=
∞
L
L
= 20pF
V
= –V
OUT
OL
G = +10
1
V
= +V
OUT
OH
G = +1
0.1
0.01
–10
100
0.1
1
10
100
1k
10k
100k
I
(mA)
FREQUENCY (Hz)
LOAD
Figure 22. Output Voltage Swing vs. Load Current
Figure 25. Closed-Loop Gain vs. Frequency
100
100
80
60
40
20
0
30
25
20
15
10
5
V
V
= ±15V
S
= ±50mV
IN
80
60
G = +1
PHASE
–OS
+OS
40
20
GAIN
0
V
= ±15V
= ∞
= 20pF
S
–20
R
C
L
L
Φ
= 80 Degrees
m
–40
100
0
1k
10k
100k
1M
10M
0
2
4
6
8
10
FREQUENCY (Hz)
C
(nF)
LOAD
Figure 26. Overshoot vs. Capacitive Load
Figure 23. Open-Loop Gain and Phase vs. Frequency
Rev. 0 | Page 9 of 16
AD8677
30
100
10
V
V
= ±5V
V
V
R
= ±15V
S
S
= ±50mV
= 28mV
IN
IN
–OS
G = +1
=
∞
L
L
25
20
15
10
5
C
= 20pF
G = +100
+OS
G = +10
1
G = +1
0.1
0
0.01
0
2
4
6
8
10
12
10
100
1k
10k
100k
1M
C
(nF)
FREQUENCY (Hz)
LOAD
Figure 30. Output Impedance vs. Frequency
Figure 27. Overshoot vs. Capacitive Load
100
10
112
110
108
106
104
102
100
98
V
V
R
= ±5V
S
V
= ±15V
S
= 28mV
IN
=
∞
L
L
C
= 20pF
G = +100
G = +10
1
G = +1
0.1
0.01
96
100
10
100
1k
10k
100k
1M
1k
10k
100k
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 28. CMRR vs. Frequency
Figure 31. Output Impedance vs. Frequency
100
100
10
1
V
= ±15V
S
–PSRR
80
60
40
20
0
+PSRR
10
100
1k
10k
100k
1M
0.1
1
10
100
1k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 29. PSRR vs. Frequency
Figure 32. Voltage Noise Density vs. Frequency
Rev. 0 | Page 10 of 16
AD8677
10
V
= ±15V
S
V
C
= ±5V
= 1nF
S
L
G = +1
V
= 4V p-p
IN
1
2
0.1
0.01
0.1
1
10
100
1k
FREQUENCY (Hz)
TIME (100µs/DIV)
Figure 33. Current Noise Density vs. Frequency
Figure 36. Large Signal Transient
400mV
200mV
0V
V
C
= ±5V AND ±15V
= 1nF
S
V
V
= ±15V
S
L
= 200mV
IN
G = +1
V
G = –100
RECOVERY = 1µs
= 100mV p-p
IN
V
IN
–200mV
0V
2
–5V
V
OUT
–10V
–15V
–20V
TIME (100µs/DIV)
TIME (10µs/DIV)
Figure 34. Small Signal Transient
Figure 37. Positive Overload Recovery
400mV
V
C
= ±15V
= 1nF
S
V
V
= ±15V
S
L
= 200mV
G = +1
= 4V p-p
IN
200mV
0V
G = –100
RECOVERY = 5µs
V
IN
V
IN
–200mV
15V
10V
5V
2
V
OUT
0V
–5V
TIME (100µs/DIV)
TIME (10µs/DIV)
Figure 35. Large Signal Transient
Figure 38. Negative Overload Recovery
Rev. 0 | Page 11 of 16
AD8677
1200mV
600mV
0V
V
= ±15V
V
V
= ±5V
S
S
VN p-p = 0.24µV
= 600mV
IN
G = –10
RECOVERY = 2.4µs
V
V
IN
–600mV
1
0V
–2V
–4V
–6V
–8V
OUT
TIME (1s/DIV)
TIME (4µs/DIV)
Figure 39. Positive Overload Recovery
Figure 42. Voltage Noise (0.1 Hz to 10 Hz)
20kΩ
1200mV
V+
V
V
= ±5V
S
1
= 600mV
IN
600mV
0V
8
G = –10
RECOVERY = 5.6µs
–
2
3
–
7
V
V
IN
5
OUTPUT
INPUT
+
AD8677
+
V
TRIM RANGE IS
TYPICALLY ±3.5mV
4
OS
–600mV
4V
V–
OUT
2V
0V
Figure 43. Optional Offset Nulling Circuit
–2V
–4V
TIME (4µs/DIV)
Figure 40. Negative Overload Recovery
V
S
= ±5V
= ±5.7V
V
IN
V
IN
V
OUT
2
TIME (400µs/DIV)
Figure 41. No Phase Reversal
Rev. 0 | Page 12 of 16
AD8677
OUTLINE DIMENSIONS
2.90 BSC
5.00 (0.1968)
4.80 (0.1890)
5
1
4
3
2.80 BSC
1.60 BSC
8
1
5
4
2
6.20 (0.2440)
5.80 (0.2284)
4.00 (0.1574)
3.80 (0.1497)
PIN 1
0.95 BSC
1.90
BSC
*
0.90
0.87
0.84
1.27 (0.0500)
BSC
0.50 (0.0196)
0.25 (0.0099)
× 45°
1.75 (0.0688)
1.35 (0.0532)
0.25 (0.0098)
0.10 (0.0040)
*
1.00 MAX
0.20
0.08
8°
0.51 (0.0201)
0.31 (0.0122)
0° 1.27 (0.0500)
COPLANARITY
0.10
0.25 (0.0098)
0.17 (0.0067)
8°
4°
0°
SEATING
PLANE
0.40 (0.0157)
0.10 MAX
0.60
0.45
0.30
0.50
0.30
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012-AA
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
*
COMPLIANT TO JEDEC STANDARDS MO-193-AB WITH
THE EXCEPTION OF PACKAGE HEIGHT AND THICKNESS.
Figure 45. 8-Lead Standard Small Outline Package [SOIC_N]
Figure 44. 5-Lead Thin Small Outline Transistor Package [TSOT]
Narrow Body
(R-8)
Dimensions shown in millimeters and (inches)
(UJ-5)
Dimensions shown in millimeters
ORDERING GUIDE
Model
Temperature Range
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
Package Description
Package Option
Branding
AD8677ARZ1
8-Lead Standard Small Outline Package [SOIC_N]
8-Lead Standard Small Outline Package [SOIC_N]
8-Lead Standard Small Outline Package [SOIC_N]
5-Lead Thin Small Outline Transistor Package [TSOT]
5-Lead Thin Small Outline Transistor Package [TSOT]
5-Lead Thin Small Outline Transistor Package [TSOT]
R-8
R-8
R-8
UJ-5
UJ-5
UJ-5
AD8677ARZ-REEL1
AD8677ARZ-REEL71
AD8677AUJZ-R21
AD8677AUJZ-REEL1
AD8677AUJZ-REEL71
A0E
A0E
A0E
1 Z = Pb-free part.
Rev. 0 | Page 13 of 16
AD8677
NOTES
Rev. 0 | Page 14 of 16
AD8677
NOTES
Rev. 0 | Page 15 of 16
AD8677
NOTES
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2005 Analog Devices, Inc. All rights reserved. Trademarks and
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