AD9662ARQZ-REEL71 [ADI]
3-Channel Laser Diode Driver with Oscillator; 3通道激光二极管驱动器与振荡器型号: | AD9662ARQZ-REEL71 |
厂家: | ADI |
描述: | 3-Channel Laser Diode Driver with Oscillator |
文件: | 总16页 (文件大小:265K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
3-Channel Laser Diode Driver
with Oscillator
AD9662
FUNCTIONAL BLOCK DIAGRAM
FEATURES
Current-controlled current source
with 3 input channels
IN3
OUTEN3
CHANNEL 3
Output current for Channel 3—315 mA
Output current for other channels—210 mA
Rise time/fall time of 0.8 ns
On-chip oscillator
Single 5 V power supply ( 10%)
Low output overshoot
IN2
OUTEN2
CHANNEL 2
Low power consumption
I
OUTPUT
ENABLE
OUT
INR
OUTENR
APPLICATIONS
READ CHANNEL
CD-RW drives
DVD-RW, DVD+RW, MO drives
Laser diode current switching
OSCEN
OSCILLATOR
GENERAL DESCRIPTION
R
R
S
F
The AD9662 is a laser diode driver for high performance CD
and DVD recordable drives. It includes three channels for three
different optical power levels: the read channel generates a
continuous output power level, whereas Channel 2 and
Channel 3 are used as write channels having 0.8 ns rise/fall
times. All channel currents are summed at the IOUT pin. Each
channel’s output current is established by multiplying the
channel’s gain by the channel’s input current. The input current
for each of the input channels—INR, IN2, and IN3—can be set
either by using an external resistor that converts an input
voltage to a current or by directly using a current source.
Figure 1. AD9662 3-Channel Laser Diode Driver
An on-chip oscillator is provided to allow output current
modulation (to reduce laser mode hopping). Two external
resistors control the frequency and the amplitude swing of the
oscillator. The push-pull oscillator can swing up to 100 mA p-p
and has a frequency range of 200 MHz to 500 MHz.
Rev. C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registeredtrademarks arethe property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Fax: 781.461.3113
www.analog.com
© 2005 Analog Devices, Inc. All rights reserved.
AD9662
TABLE OF CONTENTS
Features .............................................................................................. 1
Pin Configuration and Function Descriptions..............................6
Typical Performance Characteristics ..............................................7
Applications..................................................................................... 10
Temperature Considerations .................................................... 10
Evaluation Board ............................................................................ 12
Outline Dimensions....................................................................... 13
Ordering Guide .......................................................................... 13
Applications....................................................................................... 1
General Description......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 5
ESD Caution.................................................................................. 5
REVISION HISTORY
11/05—Rev. SpB to Rev. C
Changes to Format .............................................................Universal
7/04—Rev. Sp0 to Rev. SpB
Changes to Note 2 in Specifications............................................... 4
Changes to Absolute Maximum Ratings....................................... 5
Changes to Figure 17...................................................................... 12
12/03—Rev. SpA: Initial 2-Page Web Version
12/03—Rev. Sp0: Initial Full Version
Rev. C | Page 2 of 16
AD9662
SPECIFICATIONS
OUTENx
At TAMB, VCC = 5 V, ENABLE = 1, OSCEN = 0,
= 1, unless otherwise stated.
Conditions
Output is sourcing,
Table 1.
Parameter
Min Typ
Max Unit
LASER AMPLIFIER
Output Current Read Channel
Output Current Channel 2
Output Current Channel 3
Total Output Current
OUTENR
OUTEN2
OUTEN3
OUTEN3
210 235
210 235
315 340
>550
mA
mA
mA
mA
= 0
Output is sourcing,
Output is sourcing,
Output is sourcing,
= 0
= 0
= 0 and
OUTENR
OUTEN2
(
= 0 and/or
= 0)
Output Current Linearity1
Output Current Linearity1
Output Current Linearity1
Best-Fit Current Gain1
Best-Fit Current Gain1
Best-Fit Current Gain1
OUTENR
−4
−4
−4
0.6
0.6
0.1
+4
%
Read Channel,
Write2 Channel,
Write3 Channel,
= 0
OUTEN2
OUTEN3
+4
%
= 0
= 0
+4
%
OUTENR
125 135
120 130
240 260
145
140
280
+7
mA/mA
mA/mA
mA/mA
mA
mA
mA
Ω
Read Channel,
Write2 Channel,
Write3 Channel,
= 0
OUTEN2
OUTEN3
= 0
= 0
Best-Fit Current Offset1
Best-Fit Current Offset1
Best-Fit Current Offset1
IOUT Series Resistance
Input Impedance (RIN), Channel R, Channel 2
Input Impedance (RIN), Channel 3
IOUT Supply Sensitivity (PSRR)
Read Mode
OUTENR
−7
−7
0.6
0.6
Read Channel,
Write2 Channel,
Write3 Channel,
= 0
OUTEN2
OUTEN3
+7
= 0
= 0
−30 −2
6.5
+15
10
Total ROUT to VCC rail
RIN to GND
160 200
240
120
15
Ω
Ω
%/V
RIN to GND
80
100
10
IOUT = 50 mA (read-only), VCC = 5 V 10%
OUTENR
= 0
IOUT = 100 mA (50 mA read, 50 mA write)
OUTENR
IOUT Supply Sensitivity (PSRR)
Write Mode
10
15
%/V
VCC = 5 V 10%,
OUTEN2
= 0 and
OUTEN3
(
= 0 or
= 0)
OUTENR
Output Current Noise
IOUT Temperature Sensitivity
Read Mode
150
100
pA/√Hz
ppm/°C
IOUT = 50 mA (Read),
IOUT = 50 mA (read-only)
OUTENR
= 0, f = 300 MHz
= 0
IOUT = 100 mA (50 mA Read, 50 mA Write2)
OUTENR OUTEN2
IOUT Temperature Sensitivity
Write Mode Channel 2
IOUT Temperature Sensitivity
Write Mode Channel 3
100
100
ppm/°C
ppm/°C
= 0,
IOUT = 100 mA (50 mA Read, 50 mA Write3)
OUTENR OUTEN3
= 0
= 0,
= 0
LASER AMPLIFIER AC SPECIFICATIONS
Write Rise Time2
IOUT = 50 mA dc (Read), 50 mA pulse W2 or W3
OUTENR OUTEN2 OUTEN3
= 0)
0.8
0.6
13
1.8
1.8
ns
ns
%
= 0 and (
IOUT = 50 mA dc (Read), 50 mA pulse W2 or W3
OUTENR
= 0 or
Write Fall Time2
= 0
IOUT = 50 mA dc (Read), 50 mA pulse W2 or W3
OUTENR OUTEN2 OUTEN3
= 0)
Output Current Overshoot
= 0 and (
50% H-L to IOUT at 50% of final value
50% L-H to IOUT at 50% of initial value
= 0 or
IOUT ON Propagation Delay
IOUT OFF Propagation Delay
Disable Time
OUTENx
OUTENx
2.7
ns
ns
ns
ns
2.7
ENABLE 50% H-L to IOUT at 50% of initial value
ENABLE 50% L-H to IOUT at 50% of final value
5.4
13.5
Enable Time
OSCILLATOR SPECIFICATIONS
Oscillator Frequency
Oscillator Frequency Temperature Coefficient
Disable Time Oscillator
Enable Time Oscillator
OUTENR
= 0
RF = 9.53 kΩ, RS = 23.7 kΩ
RF = 9.53 kΩ, RS = 23.7 kΩ
OSCEN 50% H-L to amplitude at 50% of initial value
OSCEN 50% L-H to amplitude at 50% of final value
265 300
325
MHz
ppm/°C
ns
600
4
6
ns
Rev. C | Page 3 of 16
AD9662
Parameter
Conditions
Min Typ
Max Unit
LOGIC SPECIFICATIONS
Logic HI Threshold
Logic LO Threshold
Input Impedance
Input Leakage Current
2.0
V
V
MΩ
μA
0.8
OUTENx
OUTENx
>10
<1
, ENABLE, OSCEN
, ENABLE, OSCEN
SUPPLY CURRENT
ENABLE OSCEN OUTENR OUTEN2 OUTEN3
Power-Down
0
0
1
1
1
8.5
10
mA
Power-Up
Inputs Disabled
1
1
1
0
1
1
1
1
0
1
1
1
1
1
1
18
52
55
22
62
65
mA
mA
mA
Inputs Disabled, OSC Enabled
Read Mode, OSC Enabled3
IOUT = 50 mA
Write Mode3
1
0
1
0
0
29
35
mA
IOUT = 100 mA (50 mA W2, 50 mA W3)
OPERATING CONDITIONS
Supply Voltage Range
Operating Temperature Range
4.5
0
5.5
85
V
°C
1 Output linearity, offset current, and gain are calculated using a best-fit method at 30 mA, 45 mA, 60 mA, 75 mA, and 90 mA for the Read and Write2 Channels and
90 mA, 105 mA, 120 mA, 135 mA, and 150 mA for Write Channel 3. Each channel’s output current is given by IOUT = (IIN × Gain) + IOS.
2 This parameter is guaranteed by design and characterization using six sigma. Rise and fall times are measured electrically from the 10% to 90% points using a Sharp
GH0781JA2C diode as a load.
3 The values specified do not include the output current.
Rev. C | Page 4 of 16
AD9662
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Range
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Supply Voltage +VS
Pin 9, Pin 15, and Pin 16
Input Pins
Pin 1 and Pin 2
Pin 5
Pin 6, Pin 7, Pin 8, Pin 10, and Pin 11
Internal Power Dissipation1
16-Lead QSOP
5.5 V
2.2 mA
1.6 mA
−0.8 V to +5.5 V
620 mW
Operating Temperature Range
Storage Temperature Range
Lead Temperature, Soldering 60 sec
0°C to +85°C
−65°C to +150°C
300°C
1 Power dissipation is specified on SEMI standard 4-layer board.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. C | Page 5 of 16
AD9662
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
INR
IN2
1
2
3
4
5
6
7
8
16
15
14
V
V
CC
CC
GND
I
OUT
R
13 GND
F
AD9662
12
R
S
IN3
OUTENR
OUTEN2
OUTEN3
11 ENABLE
10 OSCEN
9
V
CC
Figure 2. Pin Configuration
Table 3. Pin Function Descriptions
Pin No.
Mnemonic
Description
1
2
3, 13
INR
IN2
GND
Input Current Pin for the Read Channel. Has a typical input impedance of 200 Ω.
Input Current Pin for Write Channel 2. Has a typical input impedance of 200 Ω.
Common External Ground Reference.
4
5
6
RF
IN3
Pin Used to Set Oscillator Frequency by Connecting a Resistor from This Pin to Ground.
Input Current Pin for Write Channel 3. Has a typical input impedance of 100 Ω.
TTL-Compatible Enable for the Read Channel. Logic low active.
OUTENR
OUTEN2
OUTEN3
VCC
OSCEN
ENABLE
RS
7
TTL-Compatible Enable for Write Channel 2. Logic low active.
8
TTL-Compatible Enable for Write Channel 3. Logic low active.
9, 15, 16
10
11
12
14
Power Supply Pins for the AD9662. Each pin needs to be decoupled with a 0.1 μF capacitor to ground.
TTL-Compatible Enable for the Oscillator. Logic high active.
TTL-Compatible Enable for the Device. Logic high active.
Pin Used to Set Oscillator Amplitude by Connecting a Resistor from This Pin to Ground.
Output Current Pin. This pin is connected to the anode of a laser diode.
IOUT
Rev. C | Page 6 of 16
AD9662
TYPICAL PERFORMANCE CHARACTERISTICS
RS = 23.7 kΩ, RF = 9.53 kΩ, and read channel output current is 50 mA, unless otherwise noted.
150
140
130
120
110
100
90
500
400
300
200
100
0
80
70
60
50
40
30
20
10
0
0
20
40
60
R RESISTANCE (kΩ)
S
80
100
120
140
160
0
5
10
15
20
R
RESISTANCE (kΩ)
F
Figure 3. Oscillator Frequency vs. RF
Figure 6. Oscillator Amplitude vs. RS
130
120
110
100
90
70
60
50
40
30
20
10
0
80
70
60
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
OSCILLATOR AMPLITUDE (mA p-p)
200
300
400
500
FREQUENCY (MHz)
Figure 4. Oscillator Amplitude vs. Frequency
Figure 7. Supply Current vs. Oscillator Amplitude
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
–20
–30
–40
–50
–60
–70
–80
THIRD HARMONIC
SECOND HARMONIC
FOURTH HARMONIC
FIFTH HARMONIC
200 250
300
350
400
450
500
0.1
1
10
100
1000
OSCILLATOR FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 8. Oscillator Harmonic Distortion vs. Frequency
Figure 5. IOUT Current Noise
Rev. C | Page 7 of 16
AD9662
55
305
300
295
290
285
280
275
50
45
40
35
–40
–20
0
20
40
60
80
100
–40
–20
0
20
40
60
80
100
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 12. Oscillator Frequency vs. Temperature
Figure 9. Oscillator Amplitude vs. Temperature
10ns/DIV
10ns/DIV
Figure 10. Optical Response 50 mA Read, 50 mA Write2,
Sharp GH0781JA2C Diode
Figure 13. Optical Response 50 mA Read, 200 mA Write3,
Sharp GH0781JA2C Diode
225
200
175
150
125
100
75
OUTPUT WAVEFORM
T
WRITE PULSE
P
w
ERASE LEVEL
P
e
P
b
BIAS LEVEL
ZERO LEVEL
OUTEN3
50
25
OUTEN2
OUTENR
0
0
0.5
1.0
1.5
(V – V (I
2.0
CC
2.5
3.0
)) (Volts)
3.5
4.0
4.5
5.0
OUT
Figure 14. Typical Waveform
Figure 11. Output Current vs. Voltage Compliance
Rev. C | Page 8 of 16
AD9662
Table 4. IOUT Control
ENABLE
OUTENR
OUTEN2
OUTEN3
IOUT
0
1
1
1
1
X
1
0
1
1
X
1
1
0
1
X
1
1
1
0
Off
Off
(IINR × GainR) + IOSR
(IIN2 × Gain2) + IOS2
(IIN3 × Gain3) + IOS3
Table 5. Oscillator Control
ENABLE
OSCEN
OUTENR
OUTEN2
OUTEN3
OSCILLATOR
0
1
1
1
1
1
X
0
1
1
1
1
X
X
1
0
X
X
X
X
1
X
0
X
X
X
1
X
X
0
Off
Off
On
On
On
On
Rev. C | Page 9 of 16
AD9662
APPLICATIONS
The AD9662 uses the current at one or more of its three
inputs—IINR, IIN2, and IIN3—and generates an output current
proportional to the input currents. Channel R has a typical gain
of 135 mA/mA, Channel 2 has a typical gain of 130 mA/mA,
and Channel 3 has a typical gain of 260 mA/mA. The input
impedance of Channel R and Channel 2 is typically 200 Ω, and
the input impedance of Channel 3 is typically 100 Ω. In most
cases, a voltage output DAC is used to set the dc current of
these channels. A series resistor should be placed between each
DAC’s output and its respective input channel. These resistors
should be chosen to properly scale the input current while not
excessively loading the output of the DAC.
This junction temperature is within the maximum recommended
operating junction temperature of 150°C. Of course, this is not
a realistic method for mounting a laser diode driver in an
optical storage device. In an actual application, the laser diode
driver would most likely be mounted to a flexible circuit board.
The θJA of a system is highly dependent on board layout and
material. The user must consider these conditions carefully.
Some of the circuitry of the AD9662 can be used to monitor the
internal junction temperature. The AD9662 uses diodes to
protect it from electrostatic discharge (ESD). Every input pin
has a diode between it and ground, with the anode connected to
ground and the cathode connected to the particular input pin.
The base-emitter junction of a PNP transistor is used for ESD
protection from each pin to VCC. The collector is electrically
connected to the substrate of the die (see Figure 15). The base-
emitter junction of this transistor can be used to monitor the
internal die temperature of the IC.
Channel R is used to provide bias current to the laser diode, and
Channel 2 and Channel 3 are used to set the amplitudes of the
current pulses that are required to write or erase the media. The
output pulses are created by applying TTL level pulses to the
channel enable pins while dc current is flowing into the input
pins. Channel 2 and Channel 3 are turned on and off according
to a predetermined write strategy (see Figure 14).
Using a 10 V source at the enable pin to forward-bias the
base-emitter junction and a 1 MΩ resistor to limit the current, a
2-point measurement can be used to calculate the junction
temperature of the IC. Because the enable pin (ENABLE) needs
to be a logic high for normal operation, the AD9662 can be
operated with the 10 V applied through the 1 MΩ resistor.
Due to the fast rise and fall time (<1 ns) required for the
operation of higher speed drives, trace lengths carrying high
speed signals, such as ENR, EN2, EN3, and the output current,
should be kept as short as possible to minimize series inductance.
A decoupling capacitor should be located near each VCC pin,
and the ground return for the cathode of the laser diode should
be kept as short as possible.
The first point is obtained by measuring the voltage, V1, with
IOUT = 0 immediately after the AD9662 is turned on. The case
temperature, T1, can be measured using a thermocouple. The
temperature of the case is measured immediately after the IC is
turned on, and that temperature is the temperature of the
transistor junction and of the die itself. Through characterization
of the AD9662, it was determined that the forward-bias voltage
of the base-emitter junction of the transistor decreases by
1.9 mV for every 1°C rise in junction temperature.
Rise time, tr, is defined as the time a pulse requires to transition
from 10% of its final value to 90% of its final value. Appropriately,
fall time, tf, is defined as the time a pulse requires to go from
90% of its initial value to 10% of its initial value.
Propagation delay is defined as the time when a transitioning
logic signal reaches 50% of its amplitude to when the output
current, IOUT, reaches 50% of its amplitude.
The second point of the 2-point measurement is obtained when
the AD9662 is operated under load. IOUT is adjusted until the
increase in supply current is 200 mA. The AD9662 is allowed to
reach thermal equilibrium, and then the voltage, V2, is measured.
TEMPERATURE CONSIDERATIONS
The AD9662 is in a 16-lead QSOP. JEDEC methods were used
to determine the θJA of the QSOP when mounted on a highly
efficient thermally conductive test board (or 4-layer board).
This board is made of FR4, is 1.60 mm thick, and consists of
four copper layers. The two internal layers are solid copper
(1 ounce/in2 or 0.35 mm thick). The two surface layers
(containing the component and back side traces) use
2 ounces/in2 (0.70 mm thick) copper. This method of
construction yields a θJA for the AD9662 of approximately
105°C/W. An integrated circuit dissipating 500 mW and
packaged in a QSOP, while operating in an ambient
environment of 85°C, has an internal junction temperature
of approximately 138°C.
The voltage measurements taken with the IC running are lower
than the actual base-emitter drop across the transistor due to
the voltage drops across the internal resistance that is in series
with the supply current (see Figure 15). This finite resistance
was calculated to be approximately 120 mΩ. Therefore, for a
supply current change of 200 mA, the ΔVBE calculation is
24 mV too low. Therefore, 24 mV must be added to the
difference in measured voltages. The change in the base-
emitter voltage is then calculated.
ΔVBE = (V2 + 24 mV – V1)
85°C + 0.500 W × 105°C/W = 138°C
Rev. C | Page 10 of 16
AD9662
The change in junction temperature can then be determined.
Using the preceding method, actual data was taken to
determine the θJA of the AD9662 in the evaluation board.
Immediately after power-up, V1 was measured to be 593 mV.
The supply current was 27 mA. The AD9662 was adjusted to
deliver 200 mA into a 10 Ω load. This resulted in a total supply
current of 244 mA. After allowing the part to reach thermal
equilibrium, V2 measured 412 mV. The voltage drop across the
120 mΩ internal resistor due to the change in supply current
was then calculated.
TJ = T1 + ΔVBE/(1.9 mV/°C)
AD9662
CC
I
V
CC
R
S
5V
–
V1, V2
+
I
(244 mA – 27 mA) × 120 mΩ = 26 mV
BE
ENR
This 26 mV internal voltage drop was then added to the
1MΩ
measured voltage reduction to determine the actual ΔVBE.
10V
ΔVBE = (593 mV – 412 mV + 26 mV) = 207 mV
The die temperature change measured 82.4°C. The output of
the AD9662 was at a voltage of 2 V. The part dissipated an
additional 600 mW of power (3 V × 200 mA). The θJA for the
AD9962 mounted on its 2-layer board was calculated to be:
600 mW/82.4°C = 137°C/W.
Figure 15. Junction Temperature Measurement Circuit
This 2-point measurement allows the rise in die temperature to
be calculated for any given power dissipation. The θJA of the
system can be calculated using the power dissipation of the LDD.
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
PD = VCC × ICC – VDIODE × IDIODE
θJA = (TJ – T1)/PD
Figure 16 shows a graph of the measured voltage between ENR
and VCC (VENR − VCC) vs. the die temperature. This graph was
constructed using a 2-layer evaluation board for the AD9662
(see Figure 17).
20
40
60
80
100
120
140
160
TEMPERATURE (°C)
Figure 16. VENR − VCC vs. Internal Temperature
Rev. C | Page 11 of 16
AD9662
EVALUATION BOARD
VINR
C3
R2
VINR
4.32kΩ
0.1μF
V
S
VINW2
C2
R3
DUT1
VIN2
4.32kΩ
0.1μF
C1
1
2
3
4
5
6
7
8
INR
IN2
V
V
16
15
14
D1
CC
VINW3
R17
DNI
0.1μF
CC
DNI
C4
R5
GND
I
OUT
R4
VIN3
C8
DNI
4.32kΩ
V_OUT
CHIP_EN
OSCEN
R
F
GND 13
12
0.1μF
R12
9.53kΩ
R9
R
IN3
S
46.4Ω
ENR
R1
3.1Ω
23.7kΩ
ENABLE 11
OSCEN 10
OUTENR
OUTEN2
OUTEN3
R8
50Ω
W1
DNI
5V
V
CC
9
C5
0.1μF
EN2
EN3
AD9662
R10
DNI
5V
W5
R7
50Ω
W2
DNI
5V
5V
R11
50Ω
W4
DNI
R6
50Ω
5V
W3
DNI
V
V
GND
D
S
5V
R13
5kΩ
C9
0.1μF
C7
10μF
Figure 17. AD9662 QSOP-16 Evaluation Board Schematic
Note: If dc logic levels are desired on the enable pins, then Jumper W1 through Jumper W5 should be used, and Resistor R6 through
Resistor R11 should not be installed. If the enable pins are driven from external signal sources, then these resistors should be
installed, and the jumpers are not necessary.
Rev. C | Page 12 of 16
AD9662
OUTLINE DIMENSIONS
0.197
0.193
0.189
16
1
9
8
0.158
0.154
0.150
0.244
0.236
0.228
PIN 1
0.069
0.053
0.065
0.049
8°
0°
0.010
0.004
0.025
BSC
0.012
0.008
0.050
0.016
SEATING
PLANE
0.010
0.006
COPLANARITY
0.004
COMPLIANT TO JEDEC STANDARDS MO-137-AB
Figure 18.16-Lead Shrink Small Outline Package [QSOP]
(RQ-16)
Dimensions shown in inches
ORDERING GUIDE
Model
Temperature Range
Package Description
16-Lead QSOP
16-Lead QSOP
Package Option
RQ-16
RQ-16
AD9662ARQZ1
0°C to 85°C
0°C to 85°C
0°C to 85°C
AD9662ARQZ-REEL1
AD9662ARQZ-REEL71
16-Lead QSOP
RQ-16
1 Z = Pb-free part.
Rev. C | Page 13 of 16
AD9662
NOTES
Rev. C | Page 14 of 16
AD9662
NOTES
Rev. C | Page 15 of 16
AD9662
NOTES
©
2005 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
C04389-0-11/05(C)
Rev. C | Page 16 of 16
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