AD9662ARQZ-REEL71 [ADI]

3-Channel Laser Diode Driver with Oscillator; 3通道激光二极管驱动器与振荡器
AD9662ARQZ-REEL71
型号: AD9662ARQZ-REEL71
厂家: ADI    ADI
描述:

3-Channel Laser Diode Driver with Oscillator
3通道激光二极管驱动器与振荡器

振荡器 驱动器 二极管 激光二极管
文件: 总16页 (文件大小:265K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
3-Channel Laser Diode Driver  
with Oscillator  
AD9662  
FUNCTIONAL BLOCK DIAGRAM  
FEATURES  
Current-controlled current source  
with 3 input channels  
IN3  
OUTEN3  
CHANNEL 3  
Output current for Channel 3—315 mA  
Output current for other channels—210 mA  
Rise time/fall time of 0.8 ns  
On-chip oscillator  
Single 5 V power supply ( 10%)  
Low output overshoot  
IN2  
OUTEN2  
CHANNEL 2  
Low power consumption  
I
OUTPUT  
ENABLE  
OUT  
INR  
OUTENR  
APPLICATIONS  
READ CHANNEL  
CD-RW drives  
DVD-RW, DVD+RW, MO drives  
Laser diode current switching  
OSCEN  
OSCILLATOR  
GENERAL DESCRIPTION  
R
R
S
F
The AD9662 is a laser diode driver for high performance CD  
and DVD recordable drives. It includes three channels for three  
different optical power levels: the read channel generates a  
continuous output power level, whereas Channel 2 and  
Channel 3 are used as write channels having 0.8 ns rise/fall  
times. All channel currents are summed at the IOUT pin. Each  
channel’s output current is established by multiplying the  
channel’s gain by the channel’s input current. The input current  
for each of the input channels—INR, IN2, and IN3—can be set  
either by using an external resistor that converts an input  
voltage to a current or by directly using a current source.  
Figure 1. AD9662 3-Channel Laser Diode Driver  
An on-chip oscillator is provided to allow output current  
modulation (to reduce laser mode hopping). Two external  
resistors control the frequency and the amplitude swing of the  
oscillator. The push-pull oscillator can swing up to 100 mA p-p  
and has a frequency range of 200 MHz to 500 MHz.  
Rev. C  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks arethe property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Fax: 781.461.3113  
www.analog.com  
© 2005 Analog Devices, Inc. All rights reserved.  
 
AD9662  
TABLE OF CONTENTS  
Features .............................................................................................. 1  
Pin Configuration and Function Descriptions..............................6  
Typical Performance Characteristics ..............................................7  
Applications..................................................................................... 10  
Temperature Considerations .................................................... 10  
Evaluation Board ............................................................................ 12  
Outline Dimensions....................................................................... 13  
Ordering Guide .......................................................................... 13  
Applications....................................................................................... 1  
General Description......................................................................... 1  
Functional Block Diagram .............................................................. 1  
Revision History ............................................................................... 2  
Specifications..................................................................................... 3  
Absolute Maximum Ratings............................................................ 5  
ESD Caution.................................................................................. 5  
REVISION HISTORY  
11/05—Rev. SpB to Rev. C  
Changes to Format .............................................................Universal  
7/04—Rev. Sp0 to Rev. SpB  
Changes to Note 2 in Specifications............................................... 4  
Changes to Absolute Maximum Ratings....................................... 5  
Changes to Figure 17...................................................................... 12  
12/03—Rev. SpA: Initial 2-Page Web Version  
12/03—Rev. Sp0: Initial Full Version  
Rev. C | Page 2 of 16  
 
AD9662  
SPECIFICATIONS  
OUTENx  
At TAMB, VCC = 5 V, ENABLE = 1, OSCEN = 0,  
= 1, unless otherwise stated.  
Conditions  
Output is sourcing,  
Table 1.  
Parameter  
Min Typ  
Max Unit  
LASER AMPLIFIER  
Output Current Read Channel  
Output Current Channel 2  
Output Current Channel 3  
Total Output Current  
OUTENR  
OUTEN2  
OUTEN3  
OUTEN3  
210 235  
210 235  
315 340  
>550  
mA  
mA  
mA  
mA  
= 0  
Output is sourcing,  
Output is sourcing,  
Output is sourcing,  
= 0  
= 0  
= 0 and  
OUTENR  
OUTEN2  
(
= 0 and/or  
= 0)  
Output Current Linearity1  
Output Current Linearity1  
Output Current Linearity1  
Best-Fit Current Gain1  
Best-Fit Current Gain1  
Best-Fit Current Gain1  
OUTENR  
−4  
−4  
−4  
0.6  
0.6  
0.1  
+4  
%
Read Channel,  
Write2 Channel,  
Write3 Channel,  
= 0  
OUTEN2  
OUTEN3  
+4  
%
= 0  
= 0  
+4  
%
OUTENR  
125 135  
120 130  
240 260  
145  
140  
280  
+7  
mA/mA  
mA/mA  
mA/mA  
mA  
mA  
mA  
Ω
Read Channel,  
Write2 Channel,  
Write3 Channel,  
= 0  
OUTEN2  
OUTEN3  
= 0  
= 0  
Best-Fit Current Offset1  
Best-Fit Current Offset1  
Best-Fit Current Offset1  
IOUT Series Resistance  
Input Impedance (RIN), Channel R, Channel 2  
Input Impedance (RIN), Channel 3  
IOUT Supply Sensitivity (PSRR)  
Read Mode  
OUTENR  
−7  
−7  
0.6  
0.6  
Read Channel,  
Write2 Channel,  
Write3 Channel,  
= 0  
OUTEN2  
OUTEN3  
+7  
= 0  
= 0  
−30 −2  
6.5  
+15  
10  
Total ROUT to VCC rail  
RIN to GND  
160 200  
240  
120  
15  
Ω
Ω
%/V  
RIN to GND  
80  
100  
10  
IOUT = 50 mA (read-only), VCC = 5 V 10%  
OUTENR  
= 0  
IOUT = 100 mA (50 mA read, 50 mA write)  
OUTENR  
IOUT Supply Sensitivity (PSRR)  
Write Mode  
10  
15  
%/V  
VCC = 5 V 10%,  
OUTEN2  
= 0 and  
OUTEN3  
(
= 0 or  
= 0)  
OUTENR  
Output Current Noise  
IOUT Temperature Sensitivity  
Read Mode  
150  
100  
pA/√Hz  
ppm/°C  
IOUT = 50 mA (Read),  
IOUT = 50 mA (read-only)  
OUTENR  
= 0, f = 300 MHz  
= 0  
IOUT = 100 mA (50 mA Read, 50 mA Write2)  
OUTENR OUTEN2  
IOUT Temperature Sensitivity  
Write Mode Channel 2  
IOUT Temperature Sensitivity  
Write Mode Channel 3  
100  
100  
ppm/°C  
ppm/°C  
= 0,  
IOUT = 100 mA (50 mA Read, 50 mA Write3)  
OUTENR OUTEN3  
= 0  
= 0,  
= 0  
LASER AMPLIFIER AC SPECIFICATIONS  
Write Rise Time2  
IOUT = 50 mA dc (Read), 50 mA pulse W2 or W3  
OUTENR OUTEN2 OUTEN3  
= 0)  
0.8  
0.6  
13  
1.8  
1.8  
ns  
ns  
%
= 0 and (  
IOUT = 50 mA dc (Read), 50 mA pulse W2 or W3  
OUTENR  
= 0 or  
Write Fall Time2  
= 0  
IOUT = 50 mA dc (Read), 50 mA pulse W2 or W3  
OUTENR OUTEN2 OUTEN3  
= 0)  
Output Current Overshoot  
= 0 and (  
50% H-L to IOUT at 50% of final value  
50% L-H to IOUT at 50% of initial value  
= 0 or  
IOUT ON Propagation Delay  
IOUT OFF Propagation Delay  
Disable Time  
OUTENx  
OUTENx  
2.7  
ns  
ns  
ns  
ns  
2.7  
ENABLE 50% H-L to IOUT at 50% of initial value  
ENABLE 50% L-H to IOUT at 50% of final value  
5.4  
13.5  
Enable Time  
OSCILLATOR SPECIFICATIONS  
Oscillator Frequency  
Oscillator Frequency Temperature Coefficient  
Disable Time Oscillator  
Enable Time Oscillator  
OUTENR  
= 0  
RF = 9.53 kΩ, RS = 23.7 kΩ  
RF = 9.53 kΩ, RS = 23.7 kΩ  
OSCEN 50% H-L to amplitude at 50% of initial value  
OSCEN 50% L-H to amplitude at 50% of final value  
265 300  
325  
MHz  
ppm/°C  
ns  
600  
4
6
ns  
Rev. C | Page 3 of 16  
 
AD9662  
Parameter  
Conditions  
Min Typ  
Max Unit  
LOGIC SPECIFICATIONS  
Logic HI Threshold  
Logic LO Threshold  
Input Impedance  
Input Leakage Current  
2.0  
V
V
MΩ  
μA  
0.8  
OUTENx  
OUTENx  
>10  
<1  
, ENABLE, OSCEN  
, ENABLE, OSCEN  
SUPPLY CURRENT  
ENABLE OSCEN OUTENR OUTEN2 OUTEN3  
Power-Down  
0
0
1
1
1
8.5  
10  
mA  
Power-Up  
Inputs Disabled  
1
1
1
0
1
1
1
1
0
1
1
1
1
1
1
18  
52  
55  
22  
62  
65  
mA  
mA  
mA  
Inputs Disabled, OSC Enabled  
Read Mode, OSC Enabled3  
IOUT = 50 mA  
Write Mode3  
1
0
1
0
0
29  
35  
mA  
IOUT = 100 mA (50 mA W2, 50 mA W3)  
OPERATING CONDITIONS  
Supply Voltage Range  
Operating Temperature Range  
4.5  
0
5.5  
85  
V
°C  
1 Output linearity, offset current, and gain are calculated using a best-fit method at 30 mA, 45 mA, 60 mA, 75 mA, and 90 mA for the Read and Write2 Channels and  
90 mA, 105 mA, 120 mA, 135 mA, and 150 mA for Write Channel 3. Each channel’s output current is given by IOUT = (IIN × Gain) + IOS.  
2 This parameter is guaranteed by design and characterization using six sigma. Rise and fall times are measured electrically from the 10% to 90% points using a Sharp  
GH0781JA2C diode as a load.  
3 The values specified do not include the output current.  
Rev. C | Page 4 of 16  
 
 
AD9662  
ABSOLUTE MAXIMUM RATINGS  
Table 2.  
Parameter  
Range  
Stresses above those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. This is a stress  
rating only; functional operation of the device at these or any  
other conditions above those indicated in the operational  
section of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect  
device reliability.  
Supply Voltage +VS  
Pin 9, Pin 15, and Pin 16  
Input Pins  
Pin 1 and Pin 2  
Pin 5  
Pin 6, Pin 7, Pin 8, Pin 10, and Pin 11  
Internal Power Dissipation1  
16-Lead QSOP  
5.5 V  
2.2 mA  
1.6 mA  
−0.8 V to +5.5 V  
620 mW  
Operating Temperature Range  
Storage Temperature Range  
Lead Temperature, Soldering 60 sec  
0°C to +85°C  
−65°C to +150°C  
300°C  
1 Power dissipation is specified on SEMI standard 4-layer board.  
ESD CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the  
human body and test equipment and can discharge without detection. Although this product features  
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy  
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance  
degradation or loss of functionality.  
Rev. C | Page 5 of 16  
 
 
AD9662  
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS  
INR  
IN2  
1
2
3
4
5
6
7
8
16  
15  
14  
V
V
CC  
CC  
GND  
I
OUT  
R
13 GND  
F
AD9662  
12  
R
S
IN3  
OUTENR  
OUTEN2  
OUTEN3  
11 ENABLE  
10 OSCEN  
9
V
CC  
Figure 2. Pin Configuration  
Table 3. Pin Function Descriptions  
Pin No.  
Mnemonic  
Description  
1
2
3, 13  
INR  
IN2  
GND  
Input Current Pin for the Read Channel. Has a typical input impedance of 200 Ω.  
Input Current Pin for Write Channel 2. Has a typical input impedance of 200 Ω.  
Common External Ground Reference.  
4
5
6
RF  
IN3  
Pin Used to Set Oscillator Frequency by Connecting a Resistor from This Pin to Ground.  
Input Current Pin for Write Channel 3. Has a typical input impedance of 100 Ω.  
TTL-Compatible Enable for the Read Channel. Logic low active.  
OUTENR  
OUTEN2  
OUTEN3  
VCC  
OSCEN  
ENABLE  
RS  
7
TTL-Compatible Enable for Write Channel 2. Logic low active.  
8
TTL-Compatible Enable for Write Channel 3. Logic low active.  
9, 15, 16  
10  
11  
12  
14  
Power Supply Pins for the AD9662. Each pin needs to be decoupled with a 0.1 μF capacitor to ground.  
TTL-Compatible Enable for the Oscillator. Logic high active.  
TTL-Compatible Enable for the Device. Logic high active.  
Pin Used to Set Oscillator Amplitude by Connecting a Resistor from This Pin to Ground.  
Output Current Pin. This pin is connected to the anode of a laser diode.  
IOUT  
Rev. C | Page 6 of 16  
 
AD9662  
TYPICAL PERFORMANCE CHARACTERISTICS  
RS = 23.7 kΩ, RF = 9.53 kΩ, and read channel output current is 50 mA, unless otherwise noted.  
150  
140  
130  
120  
110  
100  
90  
500  
400  
300  
200  
100  
0
80  
70  
60  
50  
40  
30  
20  
10  
0
0
20  
40  
60  
R RESISTANCE (kΩ)  
S
80  
100  
120  
140  
160  
0
5
10  
15  
20  
R
RESISTANCE (kΩ)  
F
Figure 3. Oscillator Frequency vs. RF  
Figure 6. Oscillator Amplitude vs. RS  
130  
120  
110  
100  
90  
70  
60  
50  
40  
30  
20  
10  
0
80  
70  
60  
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150  
OSCILLATOR AMPLITUDE (mA p-p)  
200  
300  
400  
500  
FREQUENCY (MHz)  
Figure 4. Oscillator Amplitude vs. Frequency  
Figure 7. Supply Current vs. Oscillator Amplitude  
1.40  
1.20  
1.00  
0.80  
0.60  
0.40  
0.20  
0.00  
–20  
–30  
–40  
–50  
–60  
–70  
–80  
THIRD HARMONIC  
SECOND HARMONIC  
FOURTH HARMONIC  
FIFTH HARMONIC  
200 250  
300  
350  
400  
450  
500  
0.1  
1
10  
100  
1000  
OSCILLATOR FREQUENCY (MHz)  
FREQUENCY (MHz)  
Figure 8. Oscillator Harmonic Distortion vs. Frequency  
Figure 5. IOUT Current Noise  
Rev. C | Page 7 of 16  
 
AD9662  
55  
305  
300  
295  
290  
285  
280  
275  
50  
45  
40  
35  
–40  
–20  
0
20  
40  
60  
80  
100  
–40  
–20  
0
20  
40  
60  
80  
100  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 12. Oscillator Frequency vs. Temperature  
Figure 9. Oscillator Amplitude vs. Temperature  
10ns/DIV  
10ns/DIV  
Figure 10. Optical Response 50 mA Read, 50 mA Write2,  
Sharp GH0781JA2C Diode  
Figure 13. Optical Response 50 mA Read, 200 mA Write3,  
Sharp GH0781JA2C Diode  
225  
200  
175  
150  
125  
100  
75  
OUTPUT WAVEFORM  
T
WRITE PULSE  
P
w
ERASE LEVEL  
P
e
P
b
BIAS LEVEL  
ZERO LEVEL  
OUTEN3  
50  
25  
OUTEN2  
OUTENR  
0
0
0.5  
1.0  
1.5  
(V – V (I  
2.0  
CC  
2.5  
3.0  
)) (Volts)  
3.5  
4.0  
4.5  
5.0  
OUT  
Figure 14. Typical Waveform  
Figure 11. Output Current vs. Voltage Compliance  
Rev. C | Page 8 of 16  
 
AD9662  
Table 4. IOUT Control  
ENABLE  
OUTENR  
OUTEN2  
OUTEN3  
IOUT  
0
1
1
1
1
X
1
0
1
1
X
1
1
0
1
X
1
1
1
0
Off  
Off  
(IINR × GainR) + IOSR  
(IIN2 × Gain2) + IOS2  
(IIN3 × Gain3) + IOS3  
Table 5. Oscillator Control  
ENABLE  
OSCEN  
OUTENR  
OUTEN2  
OUTEN3  
OSCILLATOR  
0
1
1
1
1
1
X
0
1
1
1
1
X
X
1
0
X
X
X
X
1
X
0
X
X
X
1
X
X
0
Off  
Off  
On  
On  
On  
On  
Rev. C | Page 9 of 16  
AD9662  
APPLICATIONS  
The AD9662 uses the current at one or more of its three  
inputs—IINR, IIN2, and IIN3—and generates an output current  
proportional to the input currents. Channel R has a typical gain  
of 135 mA/mA, Channel 2 has a typical gain of 130 mA/mA,  
and Channel 3 has a typical gain of 260 mA/mA. The input  
impedance of Channel R and Channel 2 is typically 200 Ω, and  
the input impedance of Channel 3 is typically 100 Ω. In most  
cases, a voltage output DAC is used to set the dc current of  
these channels. A series resistor should be placed between each  
DAC’s output and its respective input channel. These resistors  
should be chosen to properly scale the input current while not  
excessively loading the output of the DAC.  
This junction temperature is within the maximum recommended  
operating junction temperature of 150°C. Of course, this is not  
a realistic method for mounting a laser diode driver in an  
optical storage device. In an actual application, the laser diode  
driver would most likely be mounted to a flexible circuit board.  
The θJA of a system is highly dependent on board layout and  
material. The user must consider these conditions carefully.  
Some of the circuitry of the AD9662 can be used to monitor the  
internal junction temperature. The AD9662 uses diodes to  
protect it from electrostatic discharge (ESD). Every input pin  
has a diode between it and ground, with the anode connected to  
ground and the cathode connected to the particular input pin.  
The base-emitter junction of a PNP transistor is used for ESD  
protection from each pin to VCC. The collector is electrically  
connected to the substrate of the die (see Figure 15). The base-  
emitter junction of this transistor can be used to monitor the  
internal die temperature of the IC.  
Channel R is used to provide bias current to the laser diode, and  
Channel 2 and Channel 3 are used to set the amplitudes of the  
current pulses that are required to write or erase the media. The  
output pulses are created by applying TTL level pulses to the  
channel enable pins while dc current is flowing into the input  
pins. Channel 2 and Channel 3 are turned on and off according  
to a predetermined write strategy (see Figure 14).  
Using a 10 V source at the enable pin to forward-bias the  
base-emitter junction and a 1 MΩ resistor to limit the current, a  
2-point measurement can be used to calculate the junction  
temperature of the IC. Because the enable pin (ENABLE) needs  
to be a logic high for normal operation, the AD9662 can be  
operated with the 10 V applied through the 1 MΩ resistor.  
Due to the fast rise and fall time (<1 ns) required for the  
operation of higher speed drives, trace lengths carrying high  
speed signals, such as ENR, EN2, EN3, and the output current,  
should be kept as short as possible to minimize series inductance.  
A decoupling capacitor should be located near each VCC pin,  
and the ground return for the cathode of the laser diode should  
be kept as short as possible.  
The first point is obtained by measuring the voltage, V1, with  
IOUT = 0 immediately after the AD9662 is turned on. The case  
temperature, T1, can be measured using a thermocouple. The  
temperature of the case is measured immediately after the IC is  
turned on, and that temperature is the temperature of the  
transistor junction and of the die itself. Through characterization  
of the AD9662, it was determined that the forward-bias voltage  
of the base-emitter junction of the transistor decreases by  
1.9 mV for every 1°C rise in junction temperature.  
Rise time, tr, is defined as the time a pulse requires to transition  
from 10% of its final value to 90% of its final value. Appropriately,  
fall time, tf, is defined as the time a pulse requires to go from  
90% of its initial value to 10% of its initial value.  
Propagation delay is defined as the time when a transitioning  
logic signal reaches 50% of its amplitude to when the output  
current, IOUT, reaches 50% of its amplitude.  
The second point of the 2-point measurement is obtained when  
the AD9662 is operated under load. IOUT is adjusted until the  
increase in supply current is 200 mA. The AD9662 is allowed to  
reach thermal equilibrium, and then the voltage, V2, is measured.  
TEMPERATURE CONSIDERATIONS  
The AD9662 is in a 16-lead QSOP. JEDEC methods were used  
to determine the θJA of the QSOP when mounted on a highly  
efficient thermally conductive test board (or 4-layer board).  
This board is made of FR4, is 1.60 mm thick, and consists of  
four copper layers. The two internal layers are solid copper  
(1 ounce/in2 or 0.35 mm thick). The two surface layers  
(containing the component and back side traces) use  
2 ounces/in2 (0.70 mm thick) copper. This method of  
construction yields a θJA for the AD9662 of approximately  
105°C/W. An integrated circuit dissipating 500 mW and  
packaged in a QSOP, while operating in an ambient  
environment of 85°C, has an internal junction temperature  
of approximately 138°C.  
The voltage measurements taken with the IC running are lower  
than the actual base-emitter drop across the transistor due to  
the voltage drops across the internal resistance that is in series  
with the supply current (see Figure 15). This finite resistance  
was calculated to be approximately 120 mΩ. Therefore, for a  
supply current change of 200 mA, the ΔVBE calculation is  
24 mV too low. Therefore, 24 mV must be added to the  
difference in measured voltages. The change in the base-  
emitter voltage is then calculated.  
ΔVBE = (V2 + 24 mV – V1)  
85°C + 0.500 W × 105°C/W = 138°C  
Rev. C | Page 10 of 16  
 
AD9662  
The change in junction temperature can then be determined.  
Using the preceding method, actual data was taken to  
determine the θJA of the AD9662 in the evaluation board.  
Immediately after power-up, V1 was measured to be 593 mV.  
The supply current was 27 mA. The AD9662 was adjusted to  
deliver 200 mA into a 10 Ω load. This resulted in a total supply  
current of 244 mA. After allowing the part to reach thermal  
equilibrium, V2 measured 412 mV. The voltage drop across the  
120 mΩ internal resistor due to the change in supply current  
was then calculated.  
TJ = T1 + ΔVBE/(1.9 mV/°C)  
AD9662  
CC  
I
V
CC  
R
S
5V  
V1, V2  
+
I
(244 mA – 27 mA) × 120 mΩ = 26 mV  
BE  
ENR  
This 26 mV internal voltage drop was then added to the  
1MΩ  
measured voltage reduction to determine the actual ΔVBE.  
10V  
ΔVBE = (593 mV – 412 mV + 26 mV) = 207 mV  
The die temperature change measured 82.4°C. The output of  
the AD9662 was at a voltage of 2 V. The part dissipated an  
additional 600 mW of power (3 V × 200 mA). The θJA for the  
AD9962 mounted on its 2-layer board was calculated to be:  
600 mW/82.4°C = 137°C/W.  
Figure 15. Junction Temperature Measurement Circuit  
This 2-point measurement allows the rise in die temperature to  
be calculated for any given power dissipation. The θJA of the  
system can be calculated using the power dissipation of the LDD.  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
PD = VCC × ICC VDIODE × IDIODE  
θJA = (TJ T1)/PD  
Figure 16 shows a graph of the measured voltage between ENR  
and VCC (VENR − VCC) vs. the die temperature. This graph was  
constructed using a 2-layer evaluation board for the AD9662  
(see Figure 17).  
20  
40  
60  
80  
100  
120  
140  
160  
TEMPERATURE (°C)  
Figure 16. VENR − VCC vs. Internal Temperature  
Rev. C | Page 11 of 16  
 
 
AD9662  
EVALUATION BOARD  
VINR  
C3  
R2  
VINR  
4.32kΩ  
0.1μF  
V
S
VINW2  
C2  
R3  
DUT1  
VIN2  
4.32kΩ  
0.1μF  
C1  
1
2
3
4
5
6
7
8
INR  
IN2  
V
V
16  
15  
14  
D1  
CC  
VINW3  
R17  
DNI  
0.1μF  
CC  
DNI  
C4  
R5  
GND  
I
OUT  
R4  
VIN3  
C8  
DNI  
4.32kΩ  
V_OUT  
CHIP_EN  
OSCEN  
R
F
GND 13  
12  
0.1μF  
R12  
9.53kΩ  
R9  
R
IN3  
S
46.4Ω  
ENR  
R1  
3.1Ω  
23.7kΩ  
ENABLE 11  
OSCEN 10  
OUTENR  
OUTEN2  
OUTEN3  
R8  
50Ω  
W1  
DNI  
5V  
V
CC  
9
C5  
0.1μF  
EN2  
EN3  
AD9662  
R10  
DNI  
5V  
W5  
R7  
50Ω  
W2  
DNI  
5V  
5V  
R11  
50Ω  
W4  
DNI  
R6  
50Ω  
5V  
W3  
DNI  
V
V
GND  
D
S
5V  
R13  
5kΩ  
C9  
0.1μF  
C7  
10μF  
Figure 17. AD9662 QSOP-16 Evaluation Board Schematic  
Note: If dc logic levels are desired on the enable pins, then Jumper W1 through Jumper W5 should be used, and Resistor R6 through  
Resistor R11 should not be installed. If the enable pins are driven from external signal sources, then these resistors should be  
installed, and the jumpers are not necessary.  
Rev. C | Page 12 of 16  
 
 
AD9662  
OUTLINE DIMENSIONS  
0.197  
0.193  
0.189  
16  
1
9
8
0.158  
0.154  
0.150  
0.244  
0.236  
0.228  
PIN 1  
0.069  
0.053  
0.065  
0.049  
8°  
0°  
0.010  
0.004  
0.025  
BSC  
0.012  
0.008  
0.050  
0.016  
SEATING  
PLANE  
0.010  
0.006  
COPLANARITY  
0.004  
COMPLIANT TO JEDEC STANDARDS MO-137-AB  
Figure 18.16-Lead Shrink Small Outline Package [QSOP]  
(RQ-16)  
Dimensions shown in inches  
ORDERING GUIDE  
Model  
Temperature Range  
Package Description  
16-Lead QSOP  
16-Lead QSOP  
Package Option  
RQ-16  
RQ-16  
AD9662ARQZ1  
0°C to 85°C  
0°C to 85°C  
0°C to 85°C  
AD9662ARQZ-REEL1  
AD9662ARQZ-REEL71  
16-Lead QSOP  
RQ-16  
1 Z = Pb-free part.  
Rev. C | Page 13 of 16  
 
 
AD9662  
NOTES  
Rev. C | Page 14 of 16  
AD9662  
NOTES  
Rev. C | Page 15 of 16  
AD9662  
NOTES  
©
2005 Analog Devices, Inc. All rights reserved. Trademarks and  
registered trademarks are the property of their respective owners.  
C04389-0-11/05(C)  
Rev. C | Page 16 of 16  

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