ADG419BRMZ-REEL7 [ADI]

LC2MOS Precision Mini-DIP Analog Switch;


型号：	ADG419BRMZ-REEL7
厂家：	ADI
描述：	LC2MOS Precision Mini-DIP Analog Switch 光电二极管
文件：	总8页 (文件大小：113K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

LC²MOS Precision

Mini-DIP Analog Switch

ADG419

FEATURES

FUNCTIONAL BLOCK DIAGRAM

44 V Supply Maximum Ratings

V_SSto V_DDAnalog Signal Range

Low On Resistance (< 35 ⍀)

Ultralow Power Dissipation (< 35 ␮W)

Fast Transition Time (160 ns max)

Break-Before-Make Switching Action

Plug-In Replacement for DG419

ADG419

SWITCH SHOWN FOR A

LOGIC "1" INPUT

APPLICATIONS

Precision Test Equipment

Precision Instrumentation

Battery Powered Systems

Sample Hold Systems

GENERAL DESCRIPTION

PRODUCT HIGHLIGHTS

The ADG419 is a monolithic CMOS SPDT switch. This

switch is designed on an enhanced LC²MOS process that pro-

vides low power dissipation yet gives high switching speed, low

on resistance and low leakage currents.

1. Extended Signal Range

The ADG419 is fabricated on an enhanced LC²MOS pro-

cess, giving an increased signal range that extends to the

supply rails.

The on resistance profile of the ADG419 is very flat over the full

analog input range, ensuring excellent linearity and low distor-

tion. The part also exhibits high switching speed and high signal

bandwidth. CMOS construction ensures ultralow power dissipa-

tion, making the parts ideally suited for portable and battery

powered instruments.

2. Ultralow Power Dissipation

3. Low R_ON

4. Single Supply Operation

For applications where the analog signal is unipolar, the

ADG419 can be operated from a single rail power supply.

The part is fully specified with a single +12 V power supply

and will remain functional with single supplies as low as

+5 V.

Each switch of the ADG419 conducts equally well in both

directions when ON and has an input signal range that extends

to the supplies. In the OFF condition, signal levels up to the

supplies are blocked. The ADG419 exhibits break-before-

make switching action.

REV. A

Information furnished by Analog Devices is believed to be accurate and

reliable. However, no responsibility is assumed by Analog Devices for its

use, nor for any infringements of patents or other rights of third parties

which may result from its use. No license is granted by implication or

otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781/329-4700

Fax: 781/326-8703

World Wide Web Site: http://www.analog.com

ADG419–SPECIFICATIONS¹

(V_DD= +15 V ؎ 10%, V_SS= –15 V ؎ 10%, V_L= +5 V ؎ 10%, GND = 0 V, unless otherwise noted)

Dual Supply

B Version

–40؇C to

T Version

–55؇C to

+25؇C +125؇C

Parameter

+25؇C

+85؇C

Units

Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range

R_ON

V_SSto V_DD

Ω typ

Ω max

V_D= ±12.5 V, I_S= –10 mA

V_DD= +13.5 V, V_SS= –13.5 V

LEAKAGE CURRENTS

Source OFF Leakage I_S(OFF)

V_DD= +16.5 V, V_SS= –16.5 V

V_D= ±15.5 V, V_S= ϯ15.5 V;

Test Circuit 2

V_D= ±15.5 V, V_S= ϯ15.5 V;

Test Circuit 2

±0.1

±0.25

±0.1

±0.75

±0.4

±0.75

±0.1

±0.25

±0.1

±0.75

±0.4

±0.75

nA typ

nA max

nA typ

nA max

nA typ

nA max

±5

±15

±30

Drain OFF Leakage I_D(OFF)

Channel ON Leakage I_D, I_S(ON)

V_S= V_D= ±15.5 V;

Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V_INH

Input Low Voltage, V_INL

Input Current

2.4

0.8

2.4

0.8

V min

V max

I_INLor I_INH

±0.005

±0.5

±0.005

±0.5

µA typ

µA max

V_IN= V_INLor V_INH

DYNAMIC CHARACTERISTICS²

t_TRANSITION

160

200

145

200

ns max

R_L= 300 Ω, C_L= 35 pF;

V_S1= ±10 V, V_S2= ϯ10 V;

Test Circuit 4

Break-Before-Make Time

Delay, t_D

ns typ

ns min

R_L= 300 Ω, C_L= 35 pF;

V_S1= V_S2= ±10 V;

Test Circuit 5

OFF Isolation

dB typ

R_L= 50 Ω, f = 1 MHz;

Test Circuit 6

R_L= 50 Ω, f = 1 MHz;

Test Circuit 7

Channel-to-Channel Crosstalk

C_S(OFF)

C_D, C_S(ON)

pF typ

f = 1 MHz

POWER REQUIREMENTS

I_DD

V_DD= +16.5 V, V_SS= –16.5 V

V_IN= 0 V or 5 V

0.0001

µA typ

µA max

µA typ

µA max

µA typ

µA max

2.5

I_SS

I_L

V_L= +5.5 V

NOTES

¹Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.

²Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

–2–

REV. A

ADG419

(V = +12 V ؎ 10%, V = 0 V, V = +5 V ؎ 10%, GND = 0 V, unless otherwise noted)

Single Supply

B Version

T Version

–55؇C to

+25؇C +125؇C

–40؇C to

+85؇C

Parameter

+25؇C

Units

Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range

R_ON

0 to V_DD

Ω typ

Ω max

V_D= +3 V, +8.5 V, I_S= –10 mA

V_DD= +10.8 V

LEAKAGE CURRENT

V_DD= +13.2 V

Source OFF Leakage I_S(OFF)

Drain OFF Leakage I_D(OFF)

Channel ON Leakage I_D, I_S(ON)

±0.1

±0.25

±0.1

±0.75

±0.4

±0.75

±0.1

±0.25

±0.1

±0.75

±0.4

±0.75

nA typ

nA max

nA typ

nA max

nA typ

nA max

V_D= 12.2 V/1 V, V_S= 1 V/12.2 V;

Test Circuit 2

V_D= 12.2 V/1 V, V_S= 1 V/12.2 V;

Test Circuit 2

V_S= V_D= 12.2 V/1 V;

Test Circuit 3

±5

±15

±30

DIGITAL INPUTS

Input High Voltage, V_INH

Input Low Voltage, V_INL

Input Current

2.4

0.8

2.4

0.8

V min

V max

I_INLor I_INH

±0.005

±0.5

±0.005

±0.5

µA typ

µA max

V_IN= V_INLor V_INH

DYNAMIC CHARACTERISTICS²

t_TRANSITION

180

250

170

250

ns max

ns typ

R_L= 300 Ω, C_L= 35 pF;

V_S1= 0 V/8 V, V_S2= 8 V/0 V;

Test Circuit 4

R_L= 300 Ω, C_L= 35 pF;

V_S1= V_S2= +8 V;

Test Circuit 5

Break-Before-Make Time

Delay, t_D

OFF Isolation

dB typ

R_L= 50 Ω, f = 1 MHz;

Test Circuit 6

R_L= 50 Ω, f = 1 MHz;

Test Circuit 7

Channel-to-Channel Crosstalk

C_S(OFF)

C_D, C_S(ON)

pF typ

f = 1 MHz

POWER REQUIREMENTS

I_DD

V_DD= +13.2 V

V_IN= 0 V or 5 V

0.0001

µA typ

µA max

µA typ

µA max

2.5

I_L

V_L= +5.5 V

NOTES

¹Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.

²Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

Table I. Truth Table

PIN CONFIGURATION

DIP/SOIC/␮SOIC

Logic

Switch 1

Switch 2

OFF

ADG419

TOP VIEW

(Not to Scale)

GND

ORDERING GUIDE

Temperature Ranges

Model

Package Options*

ADG419BN

ADG419BR

ADG419BRM –40°C to +85°C

–40°C to +85°C

N-8

SO-8

RM-8

Q-8

ADG419TQ –55°C to +125°C

*N = Plastic DIP, Q = Cerdip, RM = µSOIC, SO = 0.15" Small Outline IC (SOIC).

REV. A

–3–

ADG419

ABSOLUTE MAXIMUM RATINGS¹

(T_A= +25°C unless otherwise noted)

Plastic Package, Power Dissipation . . . . . . . . . . . . . . . 400 mW

θ_JA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 100°C/W

Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +260°C

SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 400 mW

θ_JA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 155°C/W

µSOIC Package, Power Dissipation . . . . . . . . . . . . . . . 315 mW

θ_JA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 205°C/W

Lead Temperature, Soldering

V_DDto V_SS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+44 V

V_DDto GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +25 V

V_SSto GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –25 V

V_Lto GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to V_DD+ 0.3 V

Analog, Digital Inputs². . . . . . . . . . . . V_SS– 2 V to V_DD+ 2 V

or 30 mA, Whichever Occurs First

Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA

Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA

(Pulsed at 1 ms, 10% Duty Cycle Max)

Vapor Phase (60 sec). . . . . . . . . . . . . . . . . . . . . . . +215°C

Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C

NOTES

¹Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the

device at these or any other conditions above those listed in the operational

sections of this specification is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability. Only one absolute

maximum rating may be applied at any one time.

Operating Temperature Range

Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C

Extended (T Version) . . . . . . . . . . . . . . . . –55°C to +125°C

Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Cerdip Package, Power Dissipation . . . . . . . . . . . . . . . 600 mW

θ_JA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 110°C/W

Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +300°C

²Overvoltages at IN, S or D will be clamped by internal diodes. Current should be

limited to the maximum ratings given.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the ADG419 features proprietary ESD protection circuitry, permanent damage may

occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD

precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

TERMINOLOGY

V_DD

V_SS

C_D, C_S(ON)

t_TRANSITION

“ON” switch capacitance.

Delay time between the 50% and 90% points

of the digital inputs and the switch “ON”

condition when switching from one address

state to another.

Most positive power supply potential.

Most negative power supply potential in dual

supplies. In single supply applications, it

may be connected to GND.

V_L

GND

Logic power supply (+5 V).

t_D

“OFF” time or “ON” time measured be-

tween the 90% points of both switches

when switching from one address state

to the other.

Maximum input voltage for logic “0.”

Minimum input voltage for logic “1.”

Input current of the digital input.

A measure of unwanted signal which is

coupled through from one channel to

another as a result of parasitic capacitance.

A measure of unwanted signal coupling

through an “OFF” channel.

Positive supply current.

Negative supply current.

Ground (0 V) reference.

Source terminal. May be an input or an

output.

Drain terminal. May be an input or an

output.

V_INL

V_INH

_INL(I_INH

)

R_ON

I_S(OFF)

Logic control input.

Crosstalk

Ohmic resistance between D and S.

Source leakage current with the switch

“OFF.”

Drain leakage current with the switch

“OFF.”

Off Isolation

_D(OFF)

I_DD

I_SS

I_D, I_S(ON)

Channel leakage current with the switch

“ON.”

_D(V_S)

Analog voltage on terminals D, S.

C_S(OFF)

“OFF” switch source capacitance.

–4–

REV. A

Typical Performance Characteristics–ADG419

100

= +25؇C

= +5V

= –5V

= +5V

= 0V

= +10V

= –10V

= +10V

= 0V

= +12V

= 0V

= +12V

= –12V

= +15V

= –15V

= +15V

= 0V

–15

–10

–5

, V – Volts

Figure 1. R_ONas a Function of V_D(V_S): Dual Supply Voltage

Figure 4. R_ONas a Function of V_D(V_S): Single Supply

Voltage

100

= +12V

= 0V

= +15V

= –15V

= +5V

+125؇C

+85؇C

+25؇C

+85؇C

+25؇C

–15

–10

–5

, V – Volts

Figure 2. R_ONas a Function of V_D(V_S) for Different

Temperatures

Figure 5. R_ONas a Function of V_D(V_S) for Different

Temperatures

0.006

0.02

= +15V

= –15V

= +12V

= 0V

(ON)

= +25؇C

I (ON)

0.01

0.00

0.004

0.002

0.000

(OFF)

–0.01

– 0.02

–0.03

–0.002

–0.004

–15

–10

–5

, V – Volts

Figure 3. Leakage Currents as a Function of V_S(V_D)

Figure 6. Leakage Currents as a Function of V_S(V_D)

REV. A

–5–

ADG419

220

200

180

160

10mA

= +15V

= –15V

1mA

100␮A

10␮A

= +5V

I+, I–

SINGLE SUPPLY

= 0V/5V

140

120

100

1␮A

100nA

DUAL SUPPLY

= ؎5V

10nA

1nA

SUPPLY VOLTAGE – Volts

FREQUENCY – Hz

Figure 8. Transition Time vs. Power Supply Voltage

Figure 7. Supply Current vs. Input Switching Frequency

Test Circuits

(ON)

(OFF)

= V /I

Test Circuit 2. Off Leakage

Test Circuit 3. On Leakage

Test Circuit 1. On Resistance

+15V

+5V

50%

OUT

t_TRANSITION

90%

300⍀

35pF

OUTPUT

GND

90%

–15V

Test Circuit 4. Transition Time, t_TRANSITION

+15V

+5V

ADDRESS

DRIVE(V

)

OUT

t_D

35pF

300⍀

OUT

0.9V

GND

–15V

Test Circuit 5. Break-Before-Make Time Delay, t_D

–6–

REV. A

ADG419

+15V

0.1␮F

+5V

0.1␮F

+15V

0.1␮F

+5V

0.1␮F

50⍀

OUT

50⍀

OUT

50⍀

GND

0.1␮F

–15V

0.1␮F

–15V

CHANNEL-TO-CHANNEL CROSSTALK = 20

LOG | V /V

OUT

Test Circuit 6. Off Isolation

Test Circuit 7. Crosstalk

REV. A

–7–

ADG419

OUTLINE DIMENSIONS

Dimensions shown in inches and (mm).

8-Lead Plastic DIP (N-8)

8-Lead Cerdip (Q-8)

0.430 (10.92)

0.348 (8.84)

0.055 (1.4)

MAX

0.005 (0.13)

MIN

0.280 (7.11)

0.240 (6.10)

0.310 (7.87)

0.220 (5.59)

0.325 (8.25)

0.300 (7.62)

0.060 (1.52)

0.015 (0.38)

PIN 1

0.195 (4.95)

0.115 (2.93)

0.320 (8.13)

0.290 (7.37)

0.210 (5.33)

MAX

0.405 (10.29)

MAX

0.130

(3.30)

MIN

0.060 (1.52)

0.015 (0.38)

0.160 (4.06)

0.115 (2.93)

0.200 (5.08)

MAX

0.015 (0.381)

0.008 (0.204)

SEATING

PLANE

0.150

(3.81)

MIN

0.100

(2.54)

BSC

0.022 (0.558)

0.014 (0.356)

0.070 (1.77)

0.045 (1.15)

0.200 (5.08)

0.125 (3.18)

0.015 (0.38)

0.008 (0.20)

SEATING

0.070 (1.78)

0.030 (0.76)

0.023 (0.58)

0.014 (0.36)

0.100

(2.54)

BSC

15°

0°

PLANE

8-Lead SOIC (SO-8)

(Narrow Body)

8-Lead ␮SOIC (RM-8)

0.122 (3.10)

0.114 (2.90)

0.1968 (5.00)

0.1890 (4.80)

0.1574 (4.00)

0.1497 (3.80)

0.2440 (6.20)

0.2284 (5.80)

0.122 (3.10)

0.114 (2.90)

0.199 (5.05)

0.187 (4.75)

PIN 1

0.0688 (1.75)

0.0532 (1.35)

0.0196 (0.50)

x 45°

PIN 1

0.0098 (0.25)

0.0040 (0.10)

0.0099 (0.25)

0.0256 (0.65) BSC

0.120 (3.05)

0.112 (2.84)

0.120 (3.05)

0.112 (2.84)

8°

0°

0.0500

(1.27)

BSC

0.0192 (0.49)

0.0138 (0.35)

SEATING

PLANE

0.0098 (0.25)

0.0075 (0.19)

0.0500 (1.27)

0.0160 (0.41)

0.043 (1.09)

0.037 (0.94)

0.006 (0.15)

0.002 (0.05)

33؇

27؇

0.018 (0.46)

0.008 (0.20)

0.011 (0.28)

0.003 (0.08)

0.028 (0.71)

0.016 (0.41)

SEATING

PLANE

–8–

REV. A

ADG419BRMZ-REEL7 [ADI]

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