ADG442_15 [ADI]

LC MOS Quad SPST Switches;
ADG442_15
型号: ADG442_15
厂家: ADI    ADI
描述:

LC MOS Quad SPST Switches

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LC2MOS Quad SPST Switches  
Data Sheet  
ADG441/ADG442/ADG444  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
S1  
S1  
44 V supply maximum ratings  
IN1  
IN2  
IN3  
IN4  
IN1  
IN2  
IN3  
IN4  
V
SS to VDD analog signal range  
D1  
S2  
D1  
S2  
Low on resistance (<70 Ω)  
Low ΔRON (9 Ω max)  
Low RON match (3 Ω max)  
Low power dissipation  
Fast switching times  
ADG441  
ADG444  
D2  
S3  
D2  
S3  
ADG442  
D3  
S4  
D3  
S4  
t
t
ON < 110 ns  
OFF < 60 ns  
D4  
D4  
Low leakage currents (3 nA max)  
Low charge injection (6 pC max)  
Break-before-make switching action  
Latch-up proof A grade  
Plug-in upgrade for DG201A/ADG201A, DG202A/ADG202A,  
DG211/ADG211A  
Plug-in replacement for DG441/DG442/DG444  
SWITCHES SHOWN FOR A LOGIC 1 INPUT  
Figure 1.  
Each switch conducts equally well in both directions when ON  
and has an input signal range that extends to the power  
supplies. In the OFF condition, signal levels up to the supplies  
are blocked. All switches exhibit break-before-make switching  
action for use in multiplexer applications. Inherent in the  
design is the low charge injection for minimum transients when  
switching the digital inputs.  
APPLICATIONS  
Audio and video switching  
Automatic test equipment  
Precision data acquisition  
Battery-powered systems  
Sample-and-hold systems  
Communication systems  
PRODUCT HIGHLIGHTS  
1. Extended signal range. The ADG441A/ADG442A/  
ADG444A are fabricated on an enhanced LC2MOS,  
trench-isolated process, giving an increased signal range  
that extends to the supply rails.  
GENERAL DESCRIPTION  
2. Low power dissipation.  
The ADG441, ADG442, and ADG444 are monolithic CMOS  
devices that comprise of four independently selectable switches.  
They are designed on an enhanced LC2MOS process that  
provides low power dissipation yet gives high switching speed  
and low on resistance.  
3. Low RON  
.
4. Trench isolation guards against latch-up for A grade parts.  
A dielectric trench separates the P and N channel  
transistors thereby preventing latch-up even under severe  
overvoltage conditions.  
5. Break-before-make switching. This prevents channel  
shorting when the switches are configured as a multiplexer.  
6. Single-supply operation. For applications where the analog  
signal is unipolar, the ADG441/ADG442/ADG444 can be  
operated from a single-rail power supply. The parts are  
fully specified with a single 12 V power supply.  
The on resistance profile is very flat over the full analog input  
range, which ensures good linearity and low distortion when  
switching audio signals. High switching speed also makes the  
parts suitable for video signal switching. CMOS construction  
ensures ultralow power dissipation, making the parts ideally  
suited for portable and battery-powered instruments. The  
ADG441, ADG442, and ADG444 contain four independent  
SPST switches. Each switch of the ADG441 and ADG444 turns  
on when a logic low is applied to the appropriate control input.  
The ADG442 switches are turned on with logic high on the  
appropriate control input. The ADG441 and ADG444 switches  
differ in that the ADG444 requires a 5 V logic power supply  
that is applied to the VL pin. The ADG441 and ADG442 do not  
have a VL pin, the logic power supply is generated internally by  
an on-chip voltage generator.  
Rev. B  
Document Feedback  
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700 ©1994–2014 Analog Devices, Inc. All rights reserved.  
Technical Support  
www.analog.com  
 
 
 
 
 
ADG441/ADG442/ADG444  
Data Sheet  
TABLE OF CONTENTS  
Features .............................................................................................. 1  
Absolute Maximum Ratings ............................................................5  
ESD Caution...................................................................................5  
Pin Configuration and Function Descriptions..............................6  
Typical Performance Characteristics ..............................................7  
Test Circuits........................................................................................9  
Terminology.................................................................................... 11  
Trench Isolation.............................................................................. 12  
Outline Dimensions....................................................................... 13  
Ordering Guide .......................................................................... 14  
Applications....................................................................................... 1  
General Description ......................................................................... 1  
Functional Block Diagram .............................................................. 1  
Product Highlights ........................................................................... 1  
Revision History ............................................................................... 2  
Specifications..................................................................................... 3  
Dual Supply ................................................................................... 3  
Single Supply ................................................................................. 4  
REVISION HISTORY  
5/14—Rev. A to Rev. B  
Updated Outline Dimensions....................................................... 13  
Changes to Ordering Guide .......................................................... 14  
5/05—Rev. 0 to Rev. A  
Changes to Format .............................................................Universal  
Deleted CERDIP Package and T Grade ..........................Universal  
Changes to Features and Product Highlights ............................... 1  
Changes to Test Conditions in Table 2 .......................................... 4  
Changes to Figure 11........................................................................ 8  
Changes to Trench Isolation Section ........................................... 12  
Updated Outline Dimensions....................................................... 13  
Changes to Ordering Guide .......................................................... 14  
4/94–Revision 0: Initial Version  
Rev. B | Page 2 of 16  
 
Data Sheet  
ADG441/ADG442/ADG444  
SPECIFICATIONS  
DUAL SUPPLY1  
VDD = +15 V 10%, VSS = −15 V 10%, VL = +5 V 10% (ADG444), GND = 0 V, unless otherwise noted.  
Table 1.  
B Version  
Parameter  
+25°C  
−40°C to +85°C  
Unit  
Test Conditions/Comments  
ANALOG SWITCH  
Analog Signal Range  
RON  
VSS to VDD  
V
40  
70  
Ω typ  
Ω max  
Ω typ  
Ω max  
Ω typ  
Ω max  
VD = 8.5 V, IS = −10 mA  
VDD = +13.5 V, VSS = −13.5 V  
−8.5 V ≤ VD ≤ +8.5 V  
85  
4
9
1
3
∆RON  
RON Match  
VD = 0 V, IS = −10 mA  
LEAKAGE CURRENTS  
VDD = +16.5 V, VSS = −16.5 V  
Source OFF Leakage IS (OFF)  
0.01  
nA typ  
VD = 15.5 V, VS = 15.5 V  
0.5  
0.01  
3
nA max  
nA typ  
See Figure 15  
Drain OFF Leakage ID (OFF)  
VD = 15.5 V, VS = 15.5 V  
See Figure 15  
VS = VD = 15.5 V  
See Figure 16  
0.5  
0.08  
0.5  
3
3
nA max  
nA typ  
nA max  
Channel ON Leakage ID, IS (ON)  
DIGITAL INPUTS  
Input High Voltage, VINH  
Input Low Voltage, VINL  
Input Current  
2.4  
0.8  
V min  
V max  
IINL or IINH  
0.00001  
0.5  
µA typ  
µA max  
VIN = VINL or VINH  
DYNAMIC CHARACTERISTICS2  
tON  
85  
110  
45  
60  
30  
1
ns typ  
ns max  
ns typ  
ns max  
ns typ  
pC typ  
pC max  
dB typ  
dB typ  
pF typ  
pF typ  
pF typ  
RL = 1 kΩ, CL = 35 pF;  
VS = 10 V; see Figure 17  
RL = 1 kΩ, CL = 35 pF;  
VS = 10 V; see Figure 17  
RL = 1 kΩ, CL = 35 pF;  
VS = 0 V, RS = 0 Ω, CL = 1 nF;  
VDD = +15 V, VSS = –15 V; see Figure 18  
RL = 50 Ω, CL = 5 pF; f = 1 MHz; see Figure 19  
RL = 50 Ω, CL = 5 pF; f= 1 MHz; see Figure 20  
f = 1 MHz  
170  
80  
tOFF  
tOPEN  
Charge Injection  
6
OFF Isolation  
Channel-to-Channel Crosstalk  
CS (OFF)  
CD (OFF)  
CD, CS (ON)  
60  
100  
4
4
16  
f = 1 MHz  
f = 1 MHz  
POWER REQUIREMENTS  
IDD  
VDD = +16.5 V, VSS = −16.5 V  
Digital Inputs = 0 V or 5 V  
ADG441/ADG442  
ADG444  
80  
µA max  
µA typ  
µA max  
µA typ  
µA max  
µA typ  
µA max  
0.001  
1
0.0001  
1
0.001  
1
2.5  
2.5  
2.5  
ISS  
IL (ADG444 Only)  
VL = 5.5 V  
1 Temperature range is: B Version: −40°C to +85°C.  
2 Guaranteed by design, not subject to production test.  
Rev. B | Page 3 of 16  
 
 
ADG441/ADG442/ADG444  
Data Sheet  
SINGLE SUPPLY1  
VDD = +12 V 10%, VSS = 0 V, V L = +5 V 10% (ADG444), GND = 0 V, unless otherwise noted.  
Table 2.  
B Version  
Parameter  
+25°C  
−40°C to +85°C  
Unit  
Test Conditions/Comments  
ANALOG SWITCH  
Analog Signal Range  
RON  
0 to VDD  
V
70  
110  
Ω typ  
Ω max  
Ω typ  
Ω max  
Ω typ  
Ω max  
VD = +3 V, +8 V, IS = −5 mA  
VDD = 10.8 V  
3 V ≤ VD ≤ 8 V  
130  
4
9
1
3
∆RON  
RON Match  
VD = +6 V, IS = −5 mA  
LEAKAGE CURRENT  
VDD = 13.2 V  
Source OFF Leakage IS (OFF)  
0.01  
0.5  
0.01  
0.5  
0.08  
0.5  
nA typ  
nA max  
nA typ  
nA max  
nA typ  
nA max  
VD = 12.2 V/1 V, VS = 1 V/12.2 V  
See Figure 15  
VD = 12.2 V/1 V, VS = 1 V/12.2 V  
See Figure 15  
VS = VD = 12.2 V/1 V  
Figure 16  
3
3
3
Drain OFF Leakage ID (OFF)  
Channel ON Leakage ID, IS (ON)  
DIGITAL INPUTS  
Input High Voltage, VINH  
Input Low Voltage, VINL  
Input Current  
2.4  
0.8  
V min  
V max  
IINL or IINH  
0.00001  
0.5  
µA typ  
µA max  
VIN = VINL or VINH  
DYNAMIC CHARACTERISTICS2  
tON  
105  
150  
40  
60  
50  
2
ns typ  
ns max  
ns typ  
ns max  
ns typ  
pC typ  
pC max  
dB typ  
dB typ  
pF typ  
pF typ  
pF typ  
RL = 1 kΩ, CL = 35 pF  
VS = 8 V; Figure 17  
RL = 1 kΩ, CL = 35 pF  
VS = 8 V; Figure 17  
RL = 1 kΩ, CL = 35 pF  
VS = 6 V, RS = 0 Ω, CL = 1 nF  
VDD = 12 V, VSS = 0 V; see Figure 18  
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 19  
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 20  
220  
100  
tOFF  
tOPEN  
Charge Injection  
6
OFF Isolation  
Channel-to-Channel Crosstalk  
CS (OFF)  
CD (OFF)  
CD, CS (ON)  
60  
100  
7
10  
16  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
POWER REQUIREMENTS  
IDD  
VDD = 13.2 V  
Digital Inputs = 0 V or 5 V  
ADG441/ADG442  
ADG444  
80  
µA max  
µA typ  
µA max  
µA typ  
µA max  
0.001  
1
0.001  
1
2.5  
2.5  
IL (ADG444 Only)  
VL = 5.5 V  
1 Temperature range is: B Version: −40°C to +85°C.  
2 Guaranteed by design, not subject to production test.  
Rev. B | Page 4 of 16  
 
Data Sheet  
ADG441/ADG442/ADG444  
ABSOLUTE MAXIMUM RATINGS  
TA = 25°C unless otherwise noted.  
Stresses above those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. This is a stress  
rating only; functional operation of the device at these or any  
other conditions above those indicated in the operational  
section of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect  
device reliability.  
Table 3.  
Parameter  
Rating  
VDD to VSS  
44 V  
VDD to GND  
VSS to GND  
VL to GND  
−0.3 V to +25 V  
+0.3 V to −25 V  
−0.3 V to VDD + 0.3 V  
Table 4. Truth Table  
ADG441/ADG444 IN  
0
1
Analog, Digital Inputs  
VSS − 2 V to VDD + 2 V  
or 30 mA, Whichever  
Occurs First  
30 mA  
100 mA  
ADG442 IN  
Switch Condition  
1
0
ON  
OFF  
Continuous Current, S or D  
Peak Current, S or D (Pulsed at 1 ms,  
10% Duty Cycle Max)  
Operating Temperature Range  
Industrial (B Version)  
Storage Temperature Range  
Junction Temperature  
ESD CAUTION  
−40°C to +85°C  
−65°C to +150°C  
150°C  
Lead Temperature, Soldering (10 sec)  
Plastic Package, Power Dissipation  
θJA, Thermal Impedance  
Lead Temperature, Soldering (10 sec)  
SOIC Package, Power Dissipation  
θJA, Thermal Impedance  
300°C  
470 mW  
177°C/W  
260°C  
600 mW  
77°C/W  
Lead Temperature, Soldering  
Vapor Phase (60 sec)  
Infrared (15 sec)  
215°C  
220°C  
Rev. B | Page 5 of 16  
 
 
ADG441/ADG442/ADG444  
Data Sheet  
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS  
IN1  
D1  
S1  
1
2
3
4
5
6
7
8
16 IN2  
15 D2  
14 S2  
ADG441  
ADG442  
TOP VIEW  
(Not to Scale)  
V
13 V  
DD  
SS  
GND  
12 NC  
11 S3  
10 D3  
S4  
D4  
IN4  
9 IN3  
NC = NO CONNECT  
Figure 2. ADG441/ADG442 (DIP/SOIC)  
Table 5. ADG441/ADG442 Pin Function Descriptions  
Pin No.  
1, 8, 9, 16  
2, 7, 10, 15  
3, 6, 11, 14  
4
Mnemonic  
IN1 to IN4  
D1 to D4  
S1 to S4  
VSS  
Description  
Logic Control Input.  
Drain Terminal. May be an input or output.  
Source Terminal. May be an input or output.  
Most Negative Power Supply Potential in Dual Supplies. In single-supply applications, it may be connected  
to ground.  
5
12  
13  
GND  
NC  
VDD  
Ground (0 V) Reference.  
No Connect.  
Most Positive Power Supply Potential.  
IN1  
D1  
S1  
1
2
3
4
5
6
7
8
16 IN2  
15 D2  
14 S2  
ADG444  
V
13  
12  
V
V
SS  
DD  
TOP VIEW  
(Not to Scale)  
GND  
L
S4  
D4  
11 S3  
10 D3  
IN4  
9 IN3  
Figure 3. ADG444 (DIP/SOIC)  
Table 6. ADG444 Pin Function Descriptions  
Pin No.  
1, 8, 9, 16  
2, 7, 10, 15  
3, 6, 11, 14  
4
Mnemonic  
IN1 to IN4  
D1 to D4  
S1 to S4  
VSS  
Description  
Logic Control Input.  
Drain Terminal. May be an input or output.  
Source Terminal. May be an input or output.  
Most Negative Power Supply Potential in Dual Supplies. In single-supply applications, it may be connected  
to ground.  
5
12  
13  
GND  
VL  
VDD  
Ground (0 V) Reference.  
Logic Power Supply (5 V).  
Most Positive Power Supply Potential.  
Rev. B | Page 6 of 16  
 
Data Sheet  
ADG441/ADG442/ADG444  
TYPICAL PERFORMANCE CHARACTERISTICS  
100  
0.02  
0.01  
0
V
V
= +5V  
= –5V  
V
V
= +15V  
= –15V  
= 25°C  
T
= 25°C  
DD  
DD  
A
SS  
SS  
T
A
I
(OFF)  
D
80  
60  
40  
20  
V
V
= +12V  
= –12V  
DD  
SS  
I (ON)  
D
V
V
= +10V  
= –10V  
DD  
I
(OFF)  
SS  
S
–0.01  
V
V
= +15V  
= –15V  
DD  
SS  
–0.02  
–15  
–10  
–5  
0
5
10  
15  
–15  
–10  
–5  
0
5
10  
15  
V
(V ) (V)  
V (V ) (V)  
S D  
D
S
Figure 4. RON as a Function of VD (VS): Dual Supply  
Figure 7. Leakage Currents as a Function of VS (VD)  
170  
150  
130  
110  
90  
120  
V
V
= 5V  
= 0V  
V
V
= +15V  
= –15V  
T
= 25°C  
DD  
SS  
DD  
A
SS  
110  
100  
90  
CROSSTALK  
V
= 10V  
= 0V  
V
= 12V  
= 0V  
DD  
V
DD  
SS  
V
SS  
80  
70  
OFF ISOLATION  
70  
50  
V
V
= 15V  
= 0V  
60  
DD  
SS  
30  
10  
50  
1k  
0
3
6
9
12  
15  
10k  
100k  
1M  
10M  
V
(V ) (V)  
FREQUENCY (Hz)  
D
S
Figure 5. RON as a Function of VD (VS): Single Supply  
Figure 8. Crosstalk and Off Isolation vs. Frequency  
100  
80  
60  
40  
20  
120  
100  
80  
V
V
= +15V  
= –15V  
V
V
= 12V  
= 0V  
DD  
DD  
SS  
SS  
125°C  
125°C  
85°C  
25°C  
60  
85°C  
40  
25°C  
20  
–15  
–10  
–5  
0
5
10  
15  
0
2
4
6
8
10  
12  
V
(V ) (V)  
V (V ) (V)  
D S  
D
S
Figure 6. RON as a Function of VD (VS) for Different Temperatures  
Figure 9. RON as a Function of VD (VS) for Different Temperatures  
Rev. B | Page 7 of 16  
 
ADG441/ADG442/ADG444  
Data Sheet  
0.010  
120  
100  
80  
V
V
= 12V  
= 0V  
= 25°C  
DD  
SS  
V
= 8V  
IN  
T
A
0.005  
I
(ON)  
D
tON  
I
(OFF)  
S
0
I
(OFF)  
D
–0.005  
–0.010  
60  
tOFF  
40  
±10  
0
2
4
6
8
10  
12  
±12  
±14  
±16  
±18  
±20  
V , V (V)  
S
D
SUPPLY VOLTAGE (V)  
Figure 10. Leakage Currents as a Function of VS (VD)  
Figure 12. Switching Time vs. Bipolar Supply  
40  
30  
160  
140  
120  
100  
80  
T
= 25°C  
V
= 8V  
IN  
A
20  
tON  
10  
V
V
= +15V  
= –15V  
DD  
SS  
0
V
V
= 12V  
= 0V  
DD  
SS  
–10  
–20  
–30  
–40  
60  
tOFF  
40  
20  
–15 –12  
–9  
–6  
–3  
0
3
6
9
12  
15  
8
10  
12  
14  
16  
18  
20  
V
(V)  
SUPPLY VOLTAGE (V)  
S
Figure 11. Charge Injection vs. Source Voltage  
Figure 13. Switching Time vs. Single Supply  
Rev. B | Page 8 of 16  
Data Sheet  
ADG441/ADG442/ADG444  
TEST CIRCUITS  
I
DS  
I
(OFF)  
A
I
(OFF)  
A
I
(ON)  
A
S
D
D
V1  
S
D
S
D
V
V
D
V
V
D
S
S
S
D
V
S
R
= V /I  
1 DS  
ON  
Figure 14. On Resistance  
Figure 15. Off Leakage  
Figure 16. On Leakage  
+15V +5V  
3V  
0.1F  
0.1F  
V
50%  
50%  
50%  
IN  
ADG441/ADG444  
V
V
L
DD  
S
D
V
OUT  
3V  
R
1k  
C
35pF  
L
L
V
S
V
50%  
IN  
ADG442  
IN  
90%  
90%  
GND  
V
SS  
V
OUT  
0.1F  
–15V  
tON  
tOFF  
Figure 17. Switching Times  
+15V +5V  
3V  
V
V
L
DD  
R
S
S
D
V
V
OUT  
IN  
C
L
V
S
1nF  
IN  
V
V  
OUT  
OUT  
GND  
V
SS  
Q
= C × V  
L OUT  
INJ  
–15V  
Figure 18. Charge Injection  
Rev. B | Page 9 of 16  
 
 
 
 
 
ADG441/ADG442/ADG444  
Data Sheet  
+15V  
+5V  
+15V  
+5V  
0.1F  
0.1F  
0.1F  
0.1F  
V
V
V
V
DD  
SS  
DD  
SS  
50  
S
D
S
D
V
OUT  
R
L
50  
V
IN1  
V
S
V
S
V
IN2  
IN  
V
NC  
OUT  
R
50  
L
GND  
V
GND  
V
SS  
SS  
V
IN  
0.1F  
–15V  
0.1F  
–15V  
CHANNEL-TO-CHANNEL CROSSTALK = 20× LOG |V /V  
|
OUT  
S
Figure 19. Off Isolation  
Figure 20. Channel-to-Channel Crosstalk  
Rev. B | Page 10 of 16  
 
 
Data Sheet  
ADG441/ADG442/ADG444  
TERMINOLOGY  
tON  
RON  
Delay between applying the digital control input and the output  
switching on.  
Ohmic resistance between D and S.  
RON Match  
tOFF  
Difference between the RON of any two channels.  
Delay between applying the digital control input and the output  
switching off.  
IS (OFF)  
Source leakage current with the switch OFF.  
tOPEN  
ID (OFF)  
Break-before-make delay when switches are configured as a  
multiplexer.  
Drain leakage current with the switch OFF.  
ID, IS (ON)  
Crosstalk  
Channel leakage current with the switch ON.  
A measure of unwanted signal which is coupled through from  
one channel to another as a result of parasitic capacitance.  
VD (VS)  
Analog voltage on Terminals D, S.  
Off Isolation  
CS (OFF)  
A measure of unwanted signal coupling through an OFF switch.  
OFF switch source capacitance.  
Charge Injection  
CD (OFF)  
OFF switch drain capacitance.  
A measure of the glitch impulse transferred from the digital  
input to the analog output during switching.  
CD, CS (ON)  
ON switch capacitance.  
Rev. B | Page 11 of 16  
 
ADG441/ADG442/ADG444  
Data Sheet  
TRENCH ISOLATION  
NMOS  
PMOS  
In the ADG441A, ADG442A, and ADG444A, an insulating  
oxide layer (trench) is placed between the NMOS and the  
PMOS transistors of each CMOS switch. Parasitic junctions,  
which occur between the transistors in junction isolated  
switches, are eliminated, and the result is a completely latch-up  
proof switch.  
LOCO  
In junction isolation, the N and P wells of the PMOS and  
NMOS transistors form a diode that is reverse-biased under  
normal operation. However, during overvoltage conditions, this  
diode becomes forward-biased. A silicon-controlled rectifier  
(SCR) type circuit is formed by the two transistors causing a  
significant amplification of the current which, in turn, leads to  
latch-up. With trench isolation, this diode is removed, and the  
result is a latch-up proof switch.  
P-WELL  
N-WELL  
TRENCH  
BURIED OXIDE LAYER  
SUBSTRATE (BACK GATE)  
Figure 21. Trench Isolation  
Rev. B | Page 12 of 16  
 
Data Sheet  
ADG441/ADG442/ADG444  
OUTLINE DIMENSIONS  
0.775  
0.755  
0.735  
9
8
16  
1
0.280  
0.250  
0.240  
PIN 1  
INDICATOR  
TOP VIEW  
SIDE VIEW  
0.325  
0.310  
0.300  
0.100  
BSC  
0.195  
0.130  
0.115  
0.210  
MAX  
0.015  
0.015  
GAUGE  
PLANE  
0.150  
0.130  
0.115  
MIN  
END VIEW  
0.012  
SEATING  
PLANE  
0.021  
0.010  
0.008  
0.022  
0.430  
MAX  
0.018  
0.015  
0.016  
0.011  
0.070  
0.060  
0.055  
0.045  
0.039  
0.030  
COMPLIANT TO JEDEC STANDARDS MS-001-BB  
Figure 22. 16-Lead Plastic Dual In-Line Package [PDIP]  
Narrow Body  
(N-16)  
Dimensions shown in inches  
10.00 (0.3937)  
9.80 (0.3858)  
9
8
16  
1
6.20 (0.2441)  
5.80 (0.2283)  
4.00 (0.1575)  
3.80 (0.1496)  
1.27 (0.0500)  
0.50 (0.0197)  
0.25 (0.0098)  
45°  
BSC  
1.75 (0.0689)  
1.35 (0.0531)  
0.25 (0.0098)  
0.10 (0.0039)  
8°  
0°  
COPLANARITY  
0.10  
SEATING  
PLANE  
1.27 (0.0500)  
0.40 (0.0157)  
0.51 (0.0201)  
0.31 (0.0122)  
0.25 (0.0098)  
0.17 (0.0067)  
COMPLIANT TO JEDEC STANDARDS MS-012-AC  
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS  
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR  
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.  
Figure 23. 16-Lead Standard Small Outline Package [SOIC_N]  
(R-16)  
Dimensions shown in millimeters and (inches)  
Rev. B | Page 13 of 16  
 
ADG441/ADG442/ADG444  
Data Sheet  
ORDERING GUIDE  
Model1, 2  
Temperature Range  
Package Description  
Package Option  
ADG441BNZ  
ADG441BR  
ADG441BR-REEL  
ADG441BRZ  
ADG441BRZ-REEL  
ADG441ABCHIPS  
ADG441ABR-REEL  
ADG441ABRZ-REEL  
ADG442BNZ  
ADG442BRZ  
ADG442BRZ-REEL  
ADG444BNZ  
−40°C to +85°C  
−40°C to +85°C  
−40°C to +85°C  
−40°C to +85°C  
−40°C to +85°C  
16-Lead Plastic Dual In-Line Package [PDIP]  
16-Lead Standard Small Outline Package [SOIC_N]  
16-Lead Standard Small Outline Package [SOIC_N]  
16-Lead Standard Small Outline Package [SOIC_N]  
16-Lead Standard Small Outline Package [SOIC_N]  
DIE  
16-Lead Standard Small Outline Package [SOIC_N]  
16-Lead Standard Small Outline Package [SOIC_N]  
16-Lead Plastic Dual In-Line Package [PDIP]  
16-Lead Standard Small Outline Package [SOIC_N]  
16-Lead Standard Small Outline Package [SOIC_N]  
16-Lead Plastic Dual In-Line Package [PDIP]  
16-Lead Standard Small Outline Package [SOIC_N]  
16-Lead Standard Small Outline Package [SOIC_N]  
16-Lead Standard Small Outline Package [SOIC_N]  
16-Lead Standard Small Outline Package [SOIC_N]  
N-16  
R-16  
R-16  
R-16  
R-16  
−40°C to +85°C  
−40°C to +85°C  
−40°C to +85°C  
−40°C to +85°C  
−40°C to +85°C  
−40°C to +85°C  
−40°C to +85°C  
−40°C to +85°C  
−40°C to +85°C  
−40°C to +85°C  
R-16  
R-16  
N-16  
R-16  
R-16  
N-16  
R-16  
R-16  
R-16  
R-16  
ADG444BR  
ADG444BR-REEL  
ADG444BRZ  
ADG444BRZ-REEL  
1 Z = RoHS Compliant Part.  
2 A = Trench isolated.  
Rev. B | Page 14 of 16  
 
Data Sheet  
NOTES  
ADG441/ADG442/ADG444  
Rev. B | Page 15 of 16  
ADG441/ADG442/ADG444  
NOTES  
Data Sheet  
©1994–2014 Analog Devices, Inc. All rights reserved. Trademarks and  
registered trademarks are the property of their respective owners.  
D00396-0-5/14(B)  
Rev. B | Page 16 of 16  

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