ADG821 [ADI]
<1 з CMOS 1.8 V to 5.5 V, Dual SPST Switches; \u003c 1 з CMOS 1.8 V至5.5 V ，双通道SPST开关
| 型号： | ADG821 |
| 厂家： | 
ADI |
| 描述： | <1 з CMOS 1.8 V to 5.5 V, Dual SPST Switches |
| 文件： | 总12页 (文件大小：304K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
<1 ΩCMOS 1.8 V to 5.5 V,
a
Dual SPST Switches
ADG821/ADG822/ADG823
FEATURES
FUNCTIONAL BLOCK DIAGRAM
0.8 ꢀ Max On Resistance @125ꢁC
0.28 ꢀ Max On Resistance Flatness @125ꢁC
1.8 V to 5.5 V Single Supply
200 mA Current Carrying Capability
Automotive Temperature Range: –40ꢁC to +125ꢁC
Rail-to-Rail Operation
8-Lead MSOP Package
33 ns Switching Times
Typical Power Consumption (<0.01 ꢂW)
TTL/CMOS Compatible Inputs
Pin Compatible with ADG721/722/723
ADG822
ADG821
S1
D1
S1
D1
IN1
IN1
D2
S2
D2
S2
IN2
IN2
APPLICATIONS
Power Routing
ADG823
S1
D1
Battery-Powered Systems
Communication Systems
Data Acquisition Systems
Audio and Video Signal Routing
Cellular Phones
IN1
D2
S2
IN2
Modems
PCMCIA Cards
Hard Drives
SWITCHES SHOWN FOR A LOGIC “0”
INPUT
Relay Replacement
PRODUCT HIGHLIGHTS
GENERAL DESCRIPTION
The ADG821, ADG822, and ADG823 are monolithic CMOS
SPST (single pole, single throw) switches. These switches are
designed on an advanced submicron process that provides low
power dissipation, yet gives high switching speed, low on
resistance, and low leakage currents.
1. Very Low On Resistance (0.5 Ω typ)
2. On Resistance Flatness (RFLAT(ON)) (0.15 Ω typ)
3. Automotive Temperature Range –40°C to +125°C
4. 200 mA Current Carrying Capability
The ADG821, ADG822, and ADG823 are designed to operate
from a single 1.8 V to 5.5 V supply, making them ideal for use
in battery-powered instruments.
5. Low Power Dissipation. CMOS construction ensures low
power dissipation.
6. 8-Lead MSOP Package
Each switch of the ADG821/ADG822/ADG823 conducts equally
well in both directions when on. The ADG821, ADG822, and
ADG823 contain two independent SPST switches. The ADG821
and ADG822 differ only in that both switches are normally open
and normally closed, respectively. In the ADG823, Switch 1 is
normally open and Switch 2 is normally closed. The ADG823
exhibits break-before-make switching action.
The ADG821, ADG822, and ADG823 are available in an 8-lead
MSOP package.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, norforanyinfringementsofpatentsorotherrightsofthirdpartiesthat
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
Fax: 781/326-8703
www.analog.com
© Analog Devices, Inc., 2002
(VDD = 5 V 10%, GND = 0 V. All specifications
–40ꢁC to +125ꢁC, unless otherwise noted.)
ADG821/ADG822/ADG823–SPECIFICATIONS1
–40ꢁC to
+85ꢁC
–40ꢁC to
Parameter
25ꢁC
+125ꢁC2
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to VDD
0.8
V
On Resistance (RON
)
0.5
0.6
Ω typ
Ω max
VS = 0 V to VDD, IS = 100 mA;
Test Circuit 1
0.7
On Resistance Match Between
Channels (∆RON
)
0.16
0.2
0.15
0.23
Ω typ
Ω max
Ω typ
Ω max
VS = 0 V to VDD, IS = 100 mA
VS = 0 V to VDD, IS = 100 mA
0.25
0.26
0.28
0.3
On Resistance Flatness (RFLAT(ON)
)
LEAKAGE CURRENTS
VDD = 5.5 V
Source OFF Leakage IS (OFF)
0.01
0.25
0.01
0.25
0.01
0.25
nA typ
nA max
nA typ
nA max
nA typ
nA max
VS = 4.5 V/1 V, VD = 1 V/4.5 V;
Test Circuit 2
VS = 4.5 V/1 V, VD = 1 V/4.5 V;
Test Circuit 2
VS = VD = 1 V, or VS = VD = 4.5 V;
Test Circuit 3
3
3
3
25
25
25
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
2.0
0.8
V min
V max
IINL or IINH
0.005
4
µA typ
µA max
pF typ
VIN = VINL or VINH
0.1
CIN, Digital Input Capacitance
DYNAMIC CHARACTERISTICS3
tON
33
45
11
16
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
RL = 50 Ω, CL = 35 pF,
VS = 3 V; Test Circuit 4
RL = 50 Ω, CL = 35 pF,
VS = 3 V; Test Circuit 4
RL = 50 Ω, CL = 35 pF,
VS1 = VS2 = 3 V; Test Circuit 5
VS = 2.5 V; RS = 0 Ω, CL = 1 nF;
Test Circuit 6
48
19
52
21
1
tOFF
Break-Before-Make Time Delay, tBBM 32
(ADG823 Only)
Charge Injection
15
Off Isolation
–52
–82
24
dB typ
dB typ
RL = 50 Ω, CL = 5 pF,
f =1 MHz; Test Circuit 7
RL = 50 Ω, CL = 5 pF
Channel-to-Channel Crosstalk
Bandwidth –3 dB
CS (OFF)
f = 1 MHz; Test Circuit 9
MHz typ RL = 50 Ω, CL = 5 pF;
Test Circuit 8
85
98
230
pF typ
pF typ
pF typ
f =1 MHz
f =1 MHz
f =1 MHz
C
D (OFF)
CD, CS (ON)
POWER REQUIREMENTS
VDD = 5.5 V
Digital Inputs = 0 V or 5.5 V
IDD
0.001
µA typ
µA max
1.0
2.0
NOTES
1Temperature range: Automotive range: –40°C to +125°C.
2On resistance parameters tested with IS = 10 mA.
3Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. 0
ADG821/ADG822/ADG823
(VDD = 2.7 V to 3.6 V, GND = 0 V. All specifications –40ꢁC to +125ꢁC, unless otherwise noted.)1
–40ꢁC to
+85ꢁC
–40ꢁC to
+125ꢁC2
Parameter
25ꢁC
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to VDD
1.6
V
On Resistance (RON
)
0.7
1.4
0.16
0.2
0.3
Ω typ
Ω max
Ω typ
Ω max
Ω typ
VS = 0 V to VDD, IS = 100 mA;
Test Circuit 1
1.5
On Resistance Match Between
Channels (∆RON
)
0.25
0.28
0.33
VS = 0 V to VDD, IS = 100 mA
VS = 0 V to VDD, IS = 100 mA
On Resistance Flatness (RFLAT(ON)
)
LEAKAGE CURRENTS
VDD = 3.6 V
Source OFF Leakage IS (OFF)
0.01
0.25
0.01
0.25
0.01
0.25
nA typ
nA max
nA typ
nA max
nA typ
nA max
VS = 3.3 V/1 V, VD = 1 V/3.3 V;
Test Circuit 2
VS = 3.3 V/1 V, VD = 1 V/3.3 V;
Test Circuit 2
VS = VD = 1 V, or 3.3 V;
Test Circuit 3
3
3
3
15
25
25
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
2.0
0.8
V min
V max
IINL or IINH
0.005
4
µA typ
µA max
pF typ
VIN = VINL or VINH
0.1
CIN, Digital Input Capacitance
DYNAMIC CHARACTERISTICS3
tON
48
67
12
18
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
RL = 50 Ω, CL = 35 pF,
VS = 1.5 V; Test Circuit 4
RL = 50 Ω, CL = 35 pF,
VS = 1.5 V; Test Circuit 4
RL = 50 Ω, CL = 35 pF,
VS1 = VS2 = 1.5V; Test Circuit 5
VS =1.5 V; RS = 0 Ω, CL = 1 nF;
Test Circuit 6
74
20
78
23
1
tOFF
Break-Before-Make Time Delay, tBBM 40
(ADG823 Only)
Charge Injection
2
Off Isolation
–52
–82
24
dB typ
dB typ
RL = 50 Ω, CL = 5 pF,
f = 1 MHz; Test Circuit 7
RL = 50 Ω, CL = 5 pF,
Channel-to-Channel Crosstalk
Bandwidth –3 dB
f = 1 MHz; Test Circuit 9
MHz typ RL = 50 Ω, CL = 5 pF;
Test Circuit 8
CS (OFF)
CD (OFF)
CD, CS (ON)
85
98
230
pF typ
pF typ
pF typ
f =1 MHz
f =1 MHz
f =1 MHz
POWER REQUIREMENTS
VDD = 3.6 V
Digital Inputs = 0 V or 3.6 V
IDD
0.001
µA typ
µA max
1.0
2.0
NOTES
1Temperature range: Automotive range: –40°C to +125°C.
2On resistance parameters tested with IS = 10 mA.
3Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
Spec RIGHT
REV. 0
–3–
ADG821/ADG822/ADG823
ABSOLUTE MAXIMUM RATINGS1
(TA = 25°C, unless otherwise noted.)
θJCThermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . . 300°C
IR Reflow, Peak Temperature (<20 sec) . . . . . . . . . . . . 235°C
V
DD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Analog Inputs2 . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V or
30 mA, Whichever Occurs First
Digital Inputs2 . . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V or
30 mA, Whichever Occurs First
NOTES
1 Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 200 mA
Operating Temperature Range
Automotive . . . . . . . . . . . . . . . . . . . . . . . –40°C to +125°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Junction Temperature (Tj max) . . . . . . . . . . . . . . . . . . . 150°C
Package Power Dissipation . . . . . . . . . . . . . . (Tj max – TA)/θJA
8-Lead MSOP Package
2 Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
θJAThermal Impedance . . . . . . . . . . . . . . . . . . . . . 206°C/W
Table I. Truth Table for the ADG821/ADG822
Table II. Truth Table for the ADG823
ADG821 INx
ADG822 INx
Switch x Condition
IN1
IN2
Switch S1
Switch S2
0
1
1
0
OFF
ON
0
0
1
1
0
1
0
1
OFF
OFF
ON
ON
OFF
ON
ON
OFF
ORDERING GUIDE
Model Option
Temperature Range
Brand*
Package Description
Package
ADG821BRM
ADG822BRM
ADG823BRM
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
SQB
SRB
SSB
MSOP (microSmall Outline IC)
MSOP (microSmall Outline IC)
MSOP (microSmall Outline IC)
RM-8
RM-8
RM-8
*Branding on MSOP packages is limited to three characters due to space constraints.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
ADG821/ADG822/ADG823 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions
are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
–4–
REV. 0
ADG821/ADG822/ADG823
PIN CONFIGURATION
8-Lead MSOP
(RM-8)
1
2
3
4
S1
D1
V
DD
8
7
6
5
TOP VIEW
(Not to Scale)
IN1
D2
S2
ADG821/
ADG822/
ADG823
IN2
GND
TERMINOLOGY
Most Positive Power Supply Potential
VDD
GND
IDD
Ground (0 V) Reference
Positive Supply Current
S
Source Terminal. May be an input or output.
Drain Terminal. May be an input or output.
Logic Control Input
D
IN
RON
∆RON
RFLAT(ON)
Ohmic Resistance between D and S
On Resistance Match between any Two Channels (i.e., RON max – RON min)
Flatness is defined as the difference between the maximum and minimum value of on resistance as
measured over the specified analog signal range.
IS (OFF)
Source Leakage Current with the Switch OFF
Drain Leakage Current with the Switch OFF
Channel Leakage Current with the Switch ON
Analog Voltage on Terminals D and S
I
D (OFF)
ID, IS (ON)
VD (VS)
VINL
Maximum Input Voltage for Logic “0”
VINH
Minimum Input Voltage for Logic “1”
I
INL (IINH
CS (OFF)
D (OFF)
)
Input Current of the Digital Input
OFF Switch Source Capacitance
C
OFF Switch Drain Capacitance
CD, CS (ON)
ON Switch Capacitance
tON
Delay between Applying the Digital Control Input and the Output Switching ON
Delay between Applying the Digital Control Input and the Output Switching OFF
tOFF
tBBM
OFF time or ON time measured between the 90% points of both switches, when switching from one
address state to another.
Charge Injection
Crosstalk
It is a measure of the glitch impulse transferred from the digital input to the analog output during switching.
It is a measure of unwanted signal that is coupled through from one channel to another as a result
of parasitic capacitance.
Off Isolation
Bandwidth
A Measure of Unwanted Signal Coupling through an OFF Switch
The Frequency at which the Output Is Attenuated by –3 dBs
The Frequency Response of the ON Switch
On Response
Insertion Loss
The Loss due to the On Resistance of the Switch
REV. 0
–5–
ADG821/ADG822/ADG823–Typical Performance Characteristics
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
V
= 5V
T
= 25ꢁC
DD
A
T = 25ꢁC
A
V
= 2.7V
DD
V
= 3.0V
+125ꢁC
DD
V
= 3.3V
DD
V
= 1.8V
DD
+85ꢁC
V
= 4.5V
= 5.0V
DD
V
DD
V
= 5.5V
DD
+25ꢁC
–40ꢁC
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
(V ) –V
0
1
2
3
4
5
5
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
(V ) –V
V
V
(V ) –V
V
D
D
S
D
S
S
TPC 1. On Resistance vs. VD (VS)
TPC 2. On Resistance vs. VD (VS)
TPC 3. On Resistance vs. VD (VS)
for Different Temperatures
200
0.8
8
T
= 25ꢁC
V
= 5V
A
DD
V
= 5V, 3V
7
6
5
4
DD
150
100
50
0.7
+125ꢁC
0.6
0.5
0.4
0.3
0.2
0.1
0
+85ꢁC
I , I (ON)
S
D
V
= 3V
DD
0
I
(OFF)
3
2
D
–50
–100
–150
–200
+25ꢁC
–40ꢁC
1
0
I
(OFF)
S
V
= 3V
DD
–1
0
20
40
60
80
100 120 125
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Vs – V
0
0.5
1.0
1.5
(V ) –V
2.0
2.5
3.0
TEMPERATURE – ꢁC
V
D
S
TPC 6. Charge Injection vs.
Source Voltage
TPC 5. Leakage Currents vs.
Temperature
TPC 4. On Resistance vs. VD (VS)
for Different Temperatures
0
–10
–20
–30
–40
–50
60
0
T
= 25ꢁC
V
= 3V, 5V
A
DD
–1
–2
–3
–4
–5
–6
–7
–8
–9
T
= 25ꢁC
A
V
= 3V
= 5V
DD
50
40
30
20
10
0
t
ON
V
DD
V
= 3V, 5V
DD
t
OFF
V
= 3V, 5V
–60
–70
DD
T
= 25ꢁC
A
0.2
1
10
FREQUENCY – MHz
100
0.1
1
10
100
–40 –20
0
20 40 60 80 100 1200
TEMPERATURE – ꢁC
FREQUENCY – MHz
TPC 7. tON/tOFF vs. Temperature
TPC 8. Off Isolation vs. Frequency
TPC 9. On Response vs. Frequency
–6–
REV. 0
ADG821/ADG822/ADG823
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
–110
0.050
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
V
R
= 5V
S
= 2V
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
P-P
= 600ꢀ
L
V
RISING
IN
V
FALLING
IN
0.4
0
0.1
1
10
100
0
1
2
3
4
5
6
100
1K
10K
20
FREQUENCY – MHz
V
–V
FREQUENCY – Hz
DD
TPC 11. Logic Threshold
TPC 12. THD
TPC 10. Crosstalk vs. Frequency
Voltage vs. Suppply Voltage
REV. 0
–7–
ADG821/ADG822/ADG823
Test Circuits
I
DS
I
(ON)
I
(OFF)
A
I
(OFF)
A
D
S
D
S
D
V1
S
D
NC
A
V
D
V
S
V
D
S
D
NC = NO CONNECT
V
R
= V1/I
S
ON DS
Test Circuit 2. Off Leakage
Test Circuit 3. On Leakage
Test Circuit 1. On Resistance
V
V
DD
0.1ꢂF
50%
50%
50%
ADG821
V
IN
DD
V
OUT
V
S
D
IN
ADG822
50%
90%
R
C
L
35pF
L
V
S
IN
50ꢀ
90%
V
OUT
GND
t
t
OFF
ON
Test Circuit 4. Switching Times
V
DD
0.1ꢂF
V
V
IN
50%
50%
90%
DD
0V
S1
D1
D2
V
S1
V
OUT1
90%
V
R
50ꢀ
OUT1
C
35pF
L1
L1
V
OUT2
S2
0V
V
S2
R
50ꢀ
IN1, IN2
C
35pF
L2
L2
V
IN
90%
90%
GND
V
OUT2
0V
tBBM
tBBM
Test Circuit 5. Break-Before-Make Time Delay, tBBM (ADG823 only)
V
DD
SW ON
SW OFF
V
DD
V
R
IN
S
S
D
V
OUT
C
1nF
L
V
S
IN
V
OUT
ꢄV
OUT
GND
Q
= C ꢃ ∆V
L OUT
INJ
Test Circuit 6. Charge Injection
–8–
REV. 0
ADG821/ADG822/ADG823
V
V
DD
DD
0.1ꢂF
0.1ꢂF
NETWORK
ANALYZER
NETWORK
ANALYZER
V
V
DD
DD
S
S
50ꢀ
50ꢀ
50ꢀ
IN
IN
V
S
V
S
D
D
V
V
OUT
OUT
V
V
IN
R
50ꢀ
IN
R
50ꢀ
L
L
GND
GND
V
OUT
V
WITH SWITCH
OUT
OFF ISOLATION = 20 LOG
INSERTION LOSS = 20 LOG
V
S
V
WITHOUT SWITCH
OUT
Test Circuit 7. Off Isolation
Test Circuit 8. Bandwidth
V
DD
0.1ꢂF
NETWORK
ANALYZER
V
DD
S1
S2
V
OUT
R
L
50ꢀ
D
R
50ꢀ
50ꢀ
IN
V
S
GND
V
OUT
CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG
V
S
Test Circuit 9. Channel-to-Channel Crosstalk
REV. 0
–9–
ADG821/ADG822/ADG823
OUTLINE DIMENSIONS
8-Lead MSOP Package [MSOP]
(RM-8)
Dimensions shown in millimeters
3.00
BSC
8
5
4
4.90
BSC
3.00
BSC
1
PIN 1
0.65 BSC
1.10 MAX
0.15
0.00
0.80
0.40
8
0
0.38
0.22
0.23
0.08
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MO-187AA
–10–
REV. 0
–11–
–12–
相关型号：
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