ADL5802 [ADI]

Dual Channel High-IP3 100MHz-6GHz Active Mixer; 双通道高IP3为100MHz - 6GHz的有源混频器
ADL5802
型号: ADL5802
厂家: ADI    ADI
描述:

Dual Channel High-IP3 100MHz-6GHz Active Mixer
双通道高IP3为100MHz - 6GHz的有源混频器

文件: 总8页 (文件大小:375K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Dual Channel High-IP3  
100MHz – 6GHz Active Mixer  
Preliminary Technical Data  
ADL5802  
FEATURES  
Dual Channel Up/Down Converter  
Power Conversion Gain of 1.5dB  
Wideband RF, LO, and IF ports  
SSB Noise Figure of 11dB  
SSB NF with +10dBm blocker of 20dB  
Input IP3 of 27dBm  
Input P1dB of 12 dBm  
Typical LO Drive of 0 dBm  
-40dBm LO Leakage at RF  
Low Current Operation: 5 V @ 200 mA  
Adjustable Bias for Low Power Operation  
Exposed Paddle 4 x 4 mm, 24 Lead LFCSP Package  
APPLICATIONS  
Cellular Base Station Receivers  
Main and Diversity Receiver Designs  
Radio Link Downconverters  
GENERAL DESCRIPTION  
The ADL5802 utilizes high linearity doubly balanced active  
mixer cores with integrated LO buffer amplifiers to provide  
high dynamic range frequency conversion from 100MHz to  
6GHz. The mixers benefit from a proprietary linearization  
architecture which provides enhanced IP3 performance when  
subject to high input levels. A bias adjust feature allows the  
input linearity, SSB Noise Figure, and DC current to be  
optimized using a single control pin. The high input linearity  
allows the device to be used in demanding cellular applications  
where in-band blocking signals may otherwise result in  
degradation in dynamic performance. The balanced active  
mixer arrangement provides superb LO to RF and LO to IF  
leakage, typically better than -40dBm. The IF outputs are  
internally terminated to a 200-Ω source impedance and provide  
a typical voltage conversion gain of 7.5 dB when loaded into a  
200-Ω load.  
Figure 1. Functional Block Diagram  
The ADL5802 is fabricated using a SiGe high performance IC  
process. The device is available in a compact 4mm x 4mm 24-  
lead LFCSP package and operates over a 40°C to +85°C  
temperature range. An evaluation board is also available.  
REV. PrA  
Information furnished by Analog Devices is believed to be accurate and reliable.  
However, no responsibility is assumed by Analog Devices for its use, nor for any  
infringements of patents or other rights of third parties that may result from its use.  
Specifications subject to change without notice. No license is granted by implication  
or otherwise under any patent or patent rights of Analog Devices. Trademarks and  
registered trademarks are the property of their respective companies.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Fax: 781.326.8703  
www.analog.com  
© 2008 Analog Devices, Inc. All rights reserved.  
ADL5802  
Preliminary Technical Data  
ADL5802—Specifications  
Table 1. VS = 5 V, TA = 25°C, fRF = 900 MHz, fLO = 703 MHz, LO power = 0 dBm, Zo = 50Ω, unless otherwise noted  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
RF INPUT INTERFACE  
Return Loss  
12  
50  
dB  
Tunable to >20dB over a limited bandwidth  
Ω
Input Impedance  
RF Frequency Range  
100  
6000  
MHz  
OUTPUT INTERFACE  
Output Impedance  
Differential impedance, f = 200 MHz  
Can be matched externally to 3000MHz  
200  
VS  
Ω
IF Frequency Range  
LF  
600  
MHz  
V
DC Bias Voltage1  
LO INTERFACE  
LO Power  
4.75  
5.25  
-6  
0
12  
50  
+6  
dBm  
dB  
Return Loss  
Ω
Input Impedance  
LO Frequency Range  
DYNAMIC PERFORMANCE  
Power Conversion Gain  
Voltage Conversion Gain  
100  
6000  
MHz  
Excluding Transformer and PCB Losses  
1.5  
dB  
dB  
7.5  
ZSOURCE = 50Ω, Differential ZLOAD = 200Ω  
Differential  
SSB Noise Figure  
11  
20  
dB  
dB  
SSB Noise Figure Under-Blocking  
+10dBm Blocker present +/-3MHz from wanted  
RF input, LO source filtered  
Input Third Order Intercept  
Input Second Order Intercept  
Input 1 dB Compression Point  
fRF1 = 889 MHz, fRF2 = 890 MHz, fLO = 690 MHz,  
each RF tone at -10 dBm  
27  
56  
12  
dBm  
dBm  
dBm  
fRF1 = 889 MHz, fRF2 = 890 MHz, fLO = 690 MHz,  
each RF tone at -10 dBm  
LO to IF Output Leakage  
LO to RF Input Leakage  
RF to IF Output Isolation  
Unfiltered IF Output  
Unfiltered IF Output  
-65  
-40  
-28  
dBm  
dBm  
dB  
RFI1 to RFI2 Channel Isolation  
IF/2 Spurious  
50  
dB  
-10 dBm Input Power  
-65  
dBc  
POWER INTERFACE  
Supply Voltage  
5
V
Quiescent Current  
Disable Current  
Resistor Programmable  
ENBL pin low.  
200  
160  
mA  
mA  
1 Supply voltage should be applied from external circuit through choke inductors or IF Transformer center tap.  
REV. PrA | Page 2 of 8  
Preliminary Technical Data  
ADL5802  
ABSOLUTE MAXIMUM RATINGS  
Table 2.  
Stresses above those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. This is a stress  
rating only; functional operation of the device at these or any  
other conditions above those indicated in the operational  
section of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect  
device reliability.  
Parameter  
Rating  
Supply Voltage, VPOS  
5.5 V  
PWDN, VSET  
TBD  
RF Input Power, RF1+, RF1-, RF2+, RF2-  
Internal Power Dissipation  
θJA (Exposed Paddle Soldered Down)  
θJC (At Exposed Paddle)  
TBD  
TBD  
TBD  
TBD  
Maximum Junction Temperature  
Operating Temperature Range  
Storage Temperature Range  
TBD  
−40°C to +85°C  
−65°C to +150°C  
ESD CAUTION  
REV. PrA | Page 3 of 8  
ADL5802  
Preliminary Technical Data  
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS  
Figure 2. Pin Configuration  
Table 2. Pin Function Descriptions  
Pin No.  
Mnemonic  
Function  
1,2,5,8,14, GND  
17,18, 21  
Device Common (DC Ground).  
3,4  
OP1+, OP1-  
Channel 1Mixer differential output terminals. Need to apply bias through pull-up choke inductors or center  
tap of the IF transfomer.  
6, 13, 24  
7
9, 10  
12  
VPOS  
ENBL  
LOIP, LOIN  
VSET  
Positive Supply Voltage. 5.0V Nominal  
Device Enable. Pull low to enable the device, pull high to disable.  
Differential LO input terminals. Internally matched to 50Ω. Must be ac-coupled.  
High IP3 bias control. For high IP3 performance apply ~4V. Improved NF performance and lower supply  
current can be set by applying ~2V – 3V to the VSET pin. A resistor can be connected to the supply to raise  
the voltage while a resistor to GND will lower the voltage.  
15, 16  
OP2+, OP2-  
Channel 2 Mixer differential output terminals. Need to apply bias through pull-up choke inductors or center  
tap of the IF transfomer.  
19. 20  
22, 23  
RF2+, RF2-  
RF1+, RF1-  
Differential RF input terminals for channel 2. Internally matched to 50Ω. Must be ac-coupled.  
Differential RF input terminals for channel 1. Internally matched to 50Ω. Must be ac-coupled.  
REV. PrA | Page 4 of 8  
Preliminary Technical Data  
ADL5802  
TYPICAL PERFORMANCE CHARACTERISTICS–PRELIMINARY DATA  
VS = 5 V, TA = 25°C, as measured using typical circuit schematic with low-side LO unless otherwise noted  
4
20  
18  
16  
14  
12  
10  
8
VSET_3 V  
VSET_3.5 V  
VSET_4 V  
Iset = 3.0V  
Iset = 3.5V  
Iset = 4.0V  
3
2
1
0
6
4
-1  
-2  
2
0
500  
1000  
1500  
2000  
2500  
3000  
3500  
4000  
500  
1000  
1500  
2000  
2500  
3000  
3500  
4000  
RF Frequency (MHz)  
RF Frequency (MHz)  
Figure 3. Conversion Gain versus RF Frequency  
Figure 6. Single-Sideband NF versus RF Frequency  
40  
35  
30  
25  
20  
15  
10  
5
25  
2.5V  
3V  
3.5V  
4V  
20  
15  
10  
5
Poly. (4V)  
Poly. (3.5V)  
Poly. (3V)  
Poly. (2.5V)  
VSET_3 V  
VSET_3.5 V  
VSET_4 V  
0
0
500  
1000  
1500  
2000  
2500  
3000  
3500  
4000  
-20  
-15  
-10  
-5  
0
5
10  
RF Frequency (MHz)  
Blocker Level(dBm)  
Figure 7. Single-Sideband NF versus Blocker Level at 1950MHz  
Figure 4. IIP3 versus RF Frequency  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
-55  
-60  
16  
VSET_3 V  
VSET_3.5 V  
VSET_4 V  
14  
12  
10  
8
6
4
VSET_3 V  
VSET_3.5 V  
VSET_4 V  
2
0
300  
800  
1300  
1800  
2300  
2800  
3300  
3800  
500  
1000  
1500  
2000  
2500  
3000  
3500  
4000  
LO Frequency (MHz)  
RF Frequency (MHz)  
Figure 5. IP1dB versus RF Frequency  
Figure 8. LO to RF Leakage versus LO Frequency  
REV. PrA | Page 5 of 8  
Preliminary Technical Data  
ADL5802  
300  
250  
200  
150  
100  
50  
0
1.5  
2
2.5  
3
3.5  
4
4.5  
Vset (V)  
Figure 9. Supply Current vs. Vset  
70  
60  
50  
40  
30  
20  
10  
0
500  
1000  
1500  
2000  
2500  
3000  
3500  
4000  
RF Frequency (MHz)  
Figure 10. Channel to Channel Isolation vs. RF Frequency  
REV. PrA | Page 6 of 8  
Preliminary Technical Data  
ADL5802  
EVALUATION BOARD SCHEMATIC  
Figure 11. Evaluation Board Schematic.  
Table 3. Eval Board Configuration  
Components  
Function  
Default Conditions  
C1, C4, C6, C7, C8, C9, C10, Power Supply Decoupling. Nominal supply decoupling consists a  
C6, C7, C8 = 10pF (size 0402)  
C11, C17, C18, R10, R12,  
R19, R20, R21  
0.01 μF capacitor to ground in parallel with 10pF capacitors to  
ground positioned as close to the device as possible. Series resistors  
are provided for enhanced supply decoupling using optional ferrite  
chip inductors.  
C9, C10, C11 = 0.01 μF (size 0402)  
C1, C4, C17, C18 = open (size 0402)  
R10, R12, R19, R20, R21 = 0Ω (size  
0402)  
C5, C12, C13, C14, T3, T5,  
RF1, RF2  
RF Channel 1 and Channel 2 Input Interfaces. Input channels are ac-  
coupled through C5, C12, C13 and C14. T3 and T4 are 1:1 baluns  
used to interface to the 50-Ω differential inputs.  
C5, C12, C13, C14 = 1nF (size 0402)  
T3, T5 = ETC1-1-13 (M/A-Com)  
C15, C16,  
L1, L2, L3, L4,  
R2, R3, R6, R7, R13, R14,  
R15, R16, R20, R21,  
T2, T4,  
IF1, IF2  
C15, C16 = 100pF (size 0402)  
L1, L2, L3, L4 = open (size 0805)  
R2, R3, R13, R14, R15, R16, R20, R21 =  
0Ω (size 0402)  
R6, R7 = open (size 0402)  
IF Channel 1 and Channel 2 Output Interfaces. The 200-Ω open  
collector IF output interfaces are biased through the center taps of  
4:1 impedance transformers at T2 and T4. C15 and C16 provide local  
bypassing with R20 and R21 available for additional supply  
bypassing. L1, L2, L3, and L4 provide the options when pull-up  
choke inductors are used to bias the open-collector outputs. R6, R7,  
R13, R14, R15, and R16 are provided for IF filtering and matching  
options.  
T2, T4 = TC4-1W+ (MiniCircuits)  
C2, C3, R4, R5, T1, LO  
R1, R9, R11, ENBL1  
LO Interface. C2 and C3 provide ac-coupling for the local oscillator  
input. T1 is a 1:1 balun to allow single-ended interfacing to the  
differential 50-Ω local oscillator input. R4 and R5 provide the options  
when differential LO interfaces are needed.  
C2, C3 = 1nF (size 0402)  
R4, R5 = 0Ω (size 0402)  
T1 = ETC1-1-13 (M/A-Com)  
ENABLE Interface. The ADL5802 can be disabled using the 3-pin  
ENBL1 header. The ENBL pin is pulled up to VPOS through R9. R1 is  
provided as an optional termination for the high impendace enable  
interface.  
R9 = 10kΩ (size 0402)  
R11 = 0Ω (size 0402)  
R1 = open (size 0402)  
ENBL1 = 3-pin header and shunt  
R22 = 866Ω (size 0402)  
R23 = 10kΩ (size 0402)  
R22, R23, VSET  
VSET Bias Control. R22 and R23 form an optional resistor divider  
network between VPOS and GND, allowing for a fixed bias setting.  
The default values are set up for 3.8 V at the VSET pin.  
REV. PrA | Page 7 of 8  
ADL5802  
Preliminary Technical Data  
OUTLINE DIMENSIONS  
Figure 12. 24-Lead Lead Frame Chip Scale Package [LFCSP_VQ]  
4mm × 4mm Body, Very Thin Quad (CP-24-2))  
Dimensions shown in millimeters  
ORDERING GUIDE  
Temperature  
Package  
Option  
Transport  
Branding Media Quantity  
Models  
Range  
Package Description  
ADL5802XCPZ-R7  
−40°C to +85°C 24-Lead Lead Frame Chip Scale Package  
[LFCSP_VQ]  
CP-24-2  
TBD  
TBD, Reel  
ADL5802XCPZ-WP  
ADL5802-EVALZ  
−40°C to +85°C 24-Lead Lead Frame Chip Scale Package  
[LFCSP_VQ]  
CP-24-2  
TBD  
TBD, Waffle Pack  
1
Evaluation Board  
REV. PrA | Page 8 of 8  
PR07882-0-10/08(PrA)  

相关型号:

ADL5802-EVALZ

Dual Channel High-IP3 100MHz-6GHz Active Mixer
ADI

ADL5802ACPZ-R7

Dual Channel, High IP3, 100 MHz to 6 GHz Active Mixer
ADI

ADL5802XCPZ-R7

Dual Channel High-IP3 100MHz-6GHz Active Mixer
ADI

ADL5802XCPZ-WP

Dual Channel High-IP3 100MHz-6GHz Active Mixer
ADI

ADL5802_09

Dual Channel, High IP3, 100 MHz to 6 GHz Active Mixer
ADI

ADL5811

High IP3, 700 MHz to 2800 MHz, Double Balanced, Passive Mixer, IF Amplifier, and Wideband LO Amplifier
ADI

ADL5811-EVALZ

High IP3, 700 MHz to 2800 MHz, Double Balanced, Passive Mixer, IF Amplifier, and Wideband LO Amplifier
ADI

ADL5811ACPZ-R7

High IP3, 700 MHz to 2800 MHz, Double Balanced, Passive Mixer, IF Amplifier, and Wideband LO Amplifier
ADI

ADL5812

Dual High IP3, 700 MHz to 2800 MHz, Double Balanced, Passive Mixer, IF Amplifier, and Wideband LO Amplifier
ADI

ADL5812-EVALZ

Dual High IP3, 700 MHz to 2800 MHz, Double Balanced, Passive Mixer, IF Amplifier, and Wideband LO Amplifier
ADI

ADL5812ACPZ-R7

Dual High IP3, 700 MHz to 2800 MHz, Double Balanced, Passive Mixer, IF Amplifier, and Wideband LO Amplifier
ADI

ADL5902

50 MHz to 9 GHz 65 dB TruPwr Detector
ADI