ADM208EARSZ1 [ADI]
EMI/EMC-Compliant, ±15 kV ESDProtected, RS-232 Line Drivers/Receivers; EMI / EMC兼容，A ±15千伏ESDProtected ， RS - 232线路驱动器/接收器
| 型号： | ADM208EARSZ1 |
| 厂家： | 
ADI |
| 描述： | EMI/EMC-Compliant, ±15 kV ESDProtected, RS-232 Line Drivers/Receivers |
| 文件： | 总20页 (文件大小：464K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMI/EMC-Compliant, ± ±1 ꢀk EꢁSDPotꢂetꢂꢃ,
Rꢁ-232 Linꢂ SPivꢂPs/RꢂeꢂivꢂPs
ASM206E/ASM207E/ASM208E/ASM2±±E/ASM2±3E
FEATURES
CONNECTION DIAGRAM
5V INPUT
Complies with 89/336/EEC EMC directive
ESD protection to IEC 1000-4-2 (801-2)
Contact discharge: 8 kV
12
14
V
CC
C1+
C1–
11
13
+5V TO+10V
VOLTAGE
DOUBLER
+
+
+
0.1µF
10V
0.1µF
6.3V
0.1µF
+
+
V+
V–
Air-gap discharge: 1ꢀ kV
+10V TO –10V
VOLTAGE
INVERTER
15 C2+
17
0.1µF
10V
0.1µF
10V
Human body model: 1ꢀ kV
16
C2–
EFT/burst immunity (IEC 1000-4-4)
Low EMI emissions (EN ꢀꢀ022)
Eliminates need for TransZorb® suppressors
230 kbps data rate guaranteed
Single ꢀ V power supply
Shutdown mode 1 μW
Plug-in upgrade for MAX2xxE
Space saving TSSOP package available
T1
IN
T1
T2
T3
T4
R1
R2
R3
R4
R5
2
3
T1
7
6
OUT
T2
IN
T2
OUT
TTL/CMOS
RS-232
1
INPUTS
OUTPUTS
T3
IN
T3
20
21
8
1
28
9
OUT
T4
IN
T4
OUT
R1
R1
IN
OUT
OUT
OUT
OUT
OUT
APPLICATIONS
Laptop computers
Notebook computers
Printers
Peripherals
Modems
R2
R3
R4
R5
4
R2
IN
5
TTL/CMOS
OUTPUTS
RS-232
27
23
26
22
19
24
R3
IN
2
INPUTS
R4
IN
18
25
R5
IN
GENERAL DESCRIPTION
SHDN (ADM211E)
SHDN (ADM213E)
EN (ADM211E)
EN (ADM213E)
ADM211E/
ADM213E
GND
10
The ADM2xxE is a family of robust RS-232 and V.28 interface
devices that operate from a single 5 V power supply. These pro-
ducts are suitable for operation in harsh electrical environments
and are compliant with the EU directive on electromagnetic
compatibility (EMC) (89/336/EEC). The level of emissions and
immunity are both in compliance. EM immunity includes ESD
protection in excess of ±±5 kV on all I/O lines (IEC ±000-4-2),
fast transient burst protection (IEC ±00044), and radiated
immunity (IEC ±000-4-3). EM emissions include radiated and
conducted emissions as required by Information Technology
Equipment EN 55022, CISPR 22.
1
2
INTERNAL 400kΩ PULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
INTERNAL 5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT.
Figure 1.
charge pump, all transmitters, and three of the five receivers are
disabled. The remaining two receivers remain active, thereby
allowing monitoring of peripheral devices. This feature allows
the device to be shut down until a peripheral device begins
communication. The active receivers can alert the processor,
which can then take the ADM2±3E out of the shutdown mode.
Operating from a single 5 V supply, four external 0.± μF
capacitors are required.
All devices fully conform to the EIA-232-E and CCITT V.28
specifications and operate at data rates up to 230 kbps. Shut-
down and enable control pins are provided on some of the
products (see Table ±).
The ADM207E and ADM208E are available in 24-lead PDIP, SSOP,
available in 28-lead SSOP, TSSOP, and SOIC_W packages. All
products are backward compatible with earlier ADM2xx products,
facilitating easy upgrading of older designs.
The shutdown function on the ADM2±±E disables the charge
pump and all transmitters and receivers. On the ADM2±3E the
Table 1. Selection Table
Model
Supply Voltage
Drivers
Receivers
ESD Protection
Shutdown
Enable
Packages
ADM206E
ADM207E
ADM208E
ADM2±±E
ADM2±3E
5 V
5 V
5 V
5 V
5 V
4
5
4
4
4
3
3
4
5
5
±±5 kV
±±5 kV
±±5 kV
±±5 kV
±±5 kV
Yes
No
No
Yes
Yes
RW-24
No
N-24-±, RW-24, RS-24, RU-24
N-24-±, RW-24, RS-24, RU-24
RW-28, RS-28, RU-28
RW-28, RS-28, RU-28
No
Yes
±
SHDN
Yes (EN)
Yes (
)
± Two receivers active.
Rev. E
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registeredtrademarks arethe property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Fax: 781.461.3113
www.analog.com
©2006 Analog Devices, Inc. All rights reserved.
ASM206E/ASM207E/ASM208E/ASM2±±E/ASM2±3E
TABLE OF CONTENTꢁ
Enable and Shutdown ................................................................ ±0
Features .............................................................................................. ±
Applications....................................................................................... ±
General Description......................................................................... ±
Connection Diagram ....................................................................... ±
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 4
ESD Caution.................................................................................. 4
Pin Configurations and Function Descriptions ........................... 5
Typical Performance Characteristics ............................................. 8
Theory of Operation ...................................................................... ±0
Circuit Description..................................................................... ±0
High Baud Rate........................................................................... ±±
ESD/EFT Transient Protection Scheme .................................. ±±
ESD Testing (IEC ±00042) ..................................................... ±±
EFT/Burst Testing (IEC ±00044)........................................... ±2
IEC ±000-4-3 Radiated Immunity ........................................... ±3
Emissions/Interference.............................................................. ±4
Conducted Emissions ................................................................ ±4
Radiated Emissions.................................................................... ±4
Outline Dimensions....................................................................... ±6
Ordering Guide .......................................................................... ±9
REVISION HISTORY
9/06—Rev. D to Rev. E
3/01—Rev. B to Rev. C
Updated Format..................................................................Universal
Changes to Figure ± and Table ±..................................................... ±
Changes to Table 2............................................................................ 3
Changes to Figure 2, Figure 3, and Figure 5.................................. 5
Changes to Figure 7 and Figure 9................................................... 6
Changes to Figure ±±........................................................................ 7
Changes to Figure ±7........................................................................ 8
Updated Outline Dimensions....................................................... ±6
Changes to Ordering Guide .......................................................... ±9
Changes to Features Section ............................................................±
Changes to Specifications Table ......................................................2
Changes to Absolute Maximum Ratings........................................3
Changes to Figure 6 ..........................................................................5
Changes to Typical Performance Characteristics Section ...... 7, 8
Changes to Table V......................................................................... ±±
4/05—Rev. C to Rev. D
Changes to Specifications Section.................................................. 2
Changes to Ordering Guide ............................................................ 4
Updated Outline Dimensions......................................................... 6
Rev. E | Page 2 of 20
ASM206E/ASM207E/ASM208E/ASM2±±E/ASM2±3E
ꢁECIFICATIONꢁ
VCC = 5.0 V ± ±0ꢀ, C± to C4 = 0.± μF. All specifications TMIN to TMAX, unless otherwise noted.
Table 2.
Parameter
Min
Typ
Max Unit
Test Conditions/Comments
DC CHARACTERISTICS
Operating Voltage Range
VCC Power Supply Current
SHUTDOWN SUPPLY CURRENT
LOGIC
4.5
5.0
3.5
0.2
5.5
±3
±0
V
mA
μA
No load
Input Pull-Up Current
±0
25
μA
V
V
TIN = GND
TIN, EN, EN, SHDN, SHDN
TIN
EN, EN, SHDN, SHDN
IOUT = ±.6 mA
IOUT = −40 μA
Input Logic Threshold Low, VINL
Input Logic Threshold High, VINH
Input Logic Threshold High, VINH
TTL/CMOS Output Voltage Low, VOL
TTL/CMOS Output Voltage High, VOH
TTL/CMOS Output Leakage Current
RS-232 RECEIVER
0.8
2.0
2.0
V
V
V
0.4
3.5
EN = VCC, EN = GND, 0 V ≤ ROUT ≤ VCC
+0.05 ±±0
μA
Input Voltage Range±
Input Threshold Low
−30
0.8
+30
±.3
V
V
Input Threshold High
Input Hysteresis
Input Resistance
2.0
0.65
5
2.4
V
V
kΩ
3
7
TA = 0°C to 85°C
RS-232 TRANSMITTER
Output Voltage Swing
Output Resistance
±5.0 ±ꢀ.0
300
V
Ω
All transmitter outputs loaded with 3 kΩ to ground
VCC = 0 V, VOUT = ±2 V
Output Short-Circuit Current
TIMING CHARACTERISTICS
Maximum Data Rate
Receiver Propagation Delay, TPHL, TPLH
Receiver Output Enable Time, tER
Receiver Output Disable Time, tDR
Transmitter Propagation Delay, TPHL, TPLH
Transition Region Slew Rate
±6
±20
±60
2
mA
230
kbps RL = 3 kΩ to 7 kΩ, CL = 50 pF to 2500 pF
μs
ns
ns
μs
V/μs
0.4
±20
±20
±
CL = ±50 pF
RL = 3 kΩ, CL = 2500 pF
RL = 3 kΩ, CL = 50 pF to 2500 pF, measured from
+3 V to −3 V or −3 V to +3 V
8
EM IMMUNITY
ESD Protection (I/O Pins)
±±5
±±5
±8
kV
kV
kV
V/m
Human body model
IEC ±000-4-2 air-gap discharge
IEC ±000-4-2 contact discharge
IEC ±000-4-3
Radiated Immunity
±0
± Guaranteed by design.
Table 3. ADM211E Truth Table
Table 4. ADM213E Truth Table
EN
SHDN
SHDN
Status
TOUT 1:4
Enabled
Enabled
Disabled
ROUT 1:ꢀ
EN Status
TOUT 1:4
Disabled
Disabled
Enabled
Enabled
ROUT 1:3
Disabled
Disabled
Disabled
Enabled
ROUT 4:ꢀ
Disabled
Enabled
Disabled
Enabled
0
0
±
0
Normal operation
Normal operation
Shutdown
Enabled
Disabled
Disabled
0
0
±
±
0
±
0
±
Shutdown
±
X±
Shutdown
Normal operation
Normal operation
± X = don’t care.
Rev. E | Page 3 of 20
ASM206E/ASM207E/ASM208E/ASM2±±E/ASM2±3E
ABꢁOLUTE MAXIMUM RATINGꢁ
TA = 25°C, unless otherwise noted.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Table 5.
Parameter
Rating
VCC
V+
V–
−0.3 V to +6 V
(VCC – 0.3 V) to +±4 V
+0.3 V to −±4 V
Input Voltages
TIN
RIN
−0.3 V to (V+ + 0.3 V)
±30 V
ESD CAUTION
Output Voltages
TOUT
±±5 V
ROUT
−0.3 V to (VCC + 0.3 V)
Short-Circuit Duration
TOUT
Continuous
Power Dissipation
N-24-± PDIP
(Derate ±3.5 mW/°C above 70°C)
RW-24 SOIC_W
(Derate ±2 mW/°C above 70°C)
RS-24 SSOP
(Derate ±2 mW/°C above 70°C)
RU-24 TSSOP
(Derate ±2 mW/°C above 70°C)
RW-28 SOIC_W
(Derate ±2 mW/°C above 70°C)
RS-28 SSOP
(Derate ±0 mW/°C above 70°C)
±000 mW
ꢀ00 mW
850 mW
ꢀ00 mW
ꢀ00 mW
ꢀ00 mW
RU-28 TSSOP
(Derate ±2 mW/°C above 70°C)
ꢀ00 mW
Operating Temperature Range
Storage Temperature Range
Lead Temperature, Soldering (±0 sec)
ESD Rating
−40°C to +85°C
−65°C to +±50°C
300°C
MIL-STD-883B (I/O Pins)
IEC ±000-4-2 Air-Gap (I/O Pins)
IEC ±000-4-2 Contact (I/O Pins)
±±5 kV
±±5 kV
±8 kV
Rev. E | Page 4 of 20
ASM206E/ASM207E/ASM208E/ASM2±±E/ASM2±3E
IN CONFIGURATIONꢁ ANS FUNCTION SEꢁCRITIONꢁ
1
24
23
22
21
20
19
18
17
1
24
23
22
21
20
19
18
17
T3
T1
T2
T4
T3
T1
T2
T4
OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
2
2
R2
R2
T5
R2
R2
IN
IN
3
3
OUT
OUT
4
4
R1
R1
SHDN
EN
IN
IN
IN
5
5
R1
T5
T4
T3
R1
OUT
OUT
OUT
ADM207E
TOP VIEW
(Not to Scale)
ADM206E
TOP VIEW
(Not to Scale)
6
6
T2
T1
T2
T1
T4
IN
IN
IN
IN
IN
IN
7
7
T3
IN
IN
8
8
GND
R3
GND
R3
OUT
IN
OUT
V
9
16 R3
V
9
16 R3
IN
CC
CC
10
11
12
15
14
13
10
11
15
14
C1+
V–
C1+
V+
V–
C2–
V+
C2–
C2+
C1–
13 C2+
C1– 12
Figure 2. ADM206E Pin Configuration
Figure 4. ADM207E Pin Configuration
5V INPUT
5V INPUT
10
12
V
CC
C1+
C1–
9
+5V TO +10V
VOLTAGE
DOUBLER
+
+
+
0.1µF
10V
0.1µF
0.1µF
V
9
+
+
10 C1+
+5V TO +10V
VOLTAGE
DOUBLER
+
CC
+
6.3V
11
15
V+
V–
0.1µF
6.3V
0.1µF
6.3V
0.1µF
+
+
12
13
C1–
C2+
V+ 11
+10V TO –10V
VOLTAGE
INVERTER
13 C2+
0.1µF
10V
0.1µF
10V
V–
15
+10V TO –10V
VOLTAGE
INVERTER
+
14
C2–
0.1µF
16V
0.1µF
16V
14 C2–
T1
IN
2
3
T1
T2
T3
T4
T5
R1
R2
T1
7
6
OUT
T1
IN
T1
T2
T3
T4
R1
R2
R3
T1
7
6
2
3
1
OUT
T2
IN
T2
OUT
T2
IN
T2
OUT
TTL/CMOS
TTL/CMOS
RS-232
OUTPUTS
T3
IN
T3
RS-232
1
18
19
21
5
1
OUT
1
INPUTS
INPUTS
OUTPUTS
T3
IN
T3
18
OUT
T4
IN
T4
24
20
4
OUT
T4
IN
T4
24
4
19
5
OUT
T5
IN
T5
OUT
R1
R1
IN
OUT
OUT
R1
R1
IN
OUT
OUT
OUT
TTL/CMOS
OUTPUTS
RS-232
R2
R3
22
17
20
R2
IN
23
16
2
INPUTS
TTL/CMOS
OUTPUTS
R2
R3
RS-232
INPUTS
22
17
R2
IN
23
16
2
R3
IN
OUT
EN
R3
R3
IN
21
SHDN
ADM206E
GND
GND
8
ADM207E
8
1
2
INTERNAL 400kΩ PULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
INTERNAL 5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT.
1
2
INTERNAL 400kΩ PULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
INTERNAL 5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT.
Figure 5. ADM207E Typical Operating Circuit
Figure 3. ADM206E Typical Operating Circuit
Rev. E | Page 5 of 20
ASM206E/ASM207E/ASM208E/ASM2±±E/ASM2±3E
1
2
28
27
26
25
24
23
22
T3
T1
T2
T4
OUT
OUT
R3
R3
OUT
IN
1
2
24
23
22
21
20
19
18
17
T2
T1
T3
OUT
3
OUT
OUT
OUT
R3
R3
T4
4
R2
SHDN
EN
OUT
IN
IN
3
R2
5
R2
IN
OUT
OUT
4
R2
T2
T1
6
R4
IN
OUT
IN
IN
IN
ADM211E
TOP VIEW
5
7
R4
T1
IN
T4
T3
T2
OUT
OUT
ADM208E
TOP VIEW
(Not to Scale)
(Not to Scale)
6
R1
R1
8
21 T4
OUT
IN
OUT
IN
7
R1
9
T3
R1
20
19
18
17
16
15
IN
IN
IN
IN
8
GND
GND
R4
10
11
12
13
R5
R5
V–
OUT
IN
OUT
V
9
16 R4
V
CC
CC
IN
10
11
15
14
C1+
V+
V–
C2–
C1+
V+
C2–
C2+
13 C2+
C1– 12
C1– 14
Figure 6. ADM208E Pin Configuration
Figure 8. ADM211E Pin Configuration
5V INPUT
5V INPUT
V
12
14
C1+
C1–
11
13
+5V TO +10V
VOLTAGE
DOUBLER
+
+
CC
+
0.1µF
6.3V
0.1µF
10V
0.1µF
+
+
V
9
10
12
V+
V–
C1+
C1–
+
+5V TO+10V
VOLTAGE
DOUBLER
CC
+
0.1µF
10V
0.1µF
0.1µF
+
+
6.3V
11
15
V+
V–
+10V TO –10V
VOLTAGE
INVERTER
C2+
15
17
0.1µF
10V
0.1µF
10V
16 C2–
13 C2+
14 C2–
+10V TO –10V
VOLTAGE
INVERTER
+
0.1µF
10V
0.1µF
10V
T1
IN
T1
T2
T3
T4
R1
R2
R3
R4
R5
2
3
T1
7
6
OUT
T1
IN
2
T1
T2
T3
T4
R1
R2
R3
R4
T1
5
OUT
T2
IN
T2
OUT
TTL/CMOS
RS-232
OUTPUTS
1
T2
IN
INPUTS
1
T2
18
19
21
OUT
T3
IN
T3
TTL/CMOS
1
28
9
20
21
8
OUT
RS-232
OUTPUTS
1
INPUTS
T3
IN
T3
24
20
OUT
T4
IN
T4
OUT
T4
IN
T4
OUT
R1
R1
IN
OUT
OUT
OUT
OUT
R1
R1
IN
7
3
OUT
OUT
OUT
OUT
6
4
R2
R3
R4
R5
4
R2
IN
5
R2
R3
R4
R2
IN
TTL/CMOS
OUTPUTS
RS-232
INPUTS
26
22
19
24
27
23
R3
IN
TTL/CMOS
OUTPUTS
2
RS-232
INPUTS
2
22
17
23
16
R3
IN
R4
IN
R4
IN
18
25
R5
IN
OUT
EN
ADM208E
GND
8
SHDN
ADM211E
GND
10
1
2
1
INTERNAL 400kΩ PULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
INTERNAL 5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT.
INTERNAL 400kΩ PULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
INTERNAL 5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT.
2
Figure 7. ADM208E Typical Operating Circuit
Figure 9. ADM211E Typical Operating Circuit
Rev. E | Page 6 of 20
ASM206E/ASM207E/ASM208E/ASM2±±E/ASM2±3E
5V INPUT
1
2
28
27
26
25
24
23
T3
T1
T2
T4
OUT
OUT
12
14
V
11
13
C1+
C1–
+
+
CC
+
+5V TO+10V
VOLTAGE
DOUBLER
R3
R3
OUT
IN
0.1µF
6.3V
0.1µF
16V
0.1µF
+
+
V+
3
OUT
OUT
4
R2
SHDN
EN
15
16
V– 17
C2+
C2–
IN
+10V TO –10V
VOLTAGE
INVERTER
0.1µF
16V
0.1µF
16V
5
R2
OUT
6
T2
T1
R4
1
IN
IN
IN
ADM213E
TOP VIEW
T1
IN
7
6
2
3
T1
T2
T3
T4
R1
R2
R3
R4
R5
T1
7
22 R4
1
1
OUT
OUT
(Not to Scale)
21
T4
R1
8
OUT
IN
IN
T2
IN
T2
OUT
R1
9
20 T3
IN
TTL/CMOS
RS-232
OUTPUTS
1
INPUTS
GND
10
11
19
18
17
16
15
R5
OUT
T3
IN
1
28
9
T3
20
21
8
OUT
V
R5
V–
1
IN
CC
T4
IN
T4
C1+ 12
OUT
13
14
V+
C2–
C2+
R1
R1
IN
OUT
OUT
C1–
R2
R3
1
4
5
R2
IN
ACTIVE IN SHUTDOWN.
Figure 10. ADM213E Pin Configuration
TTL/CMOS
OUTPUTS
RS-232
INPUTS
26
22
19
24
27
23
R3
IN
OUT
3
2
R4
R4
R5
3
OUT
IN
IN
18
25
R5
3
3
OUT
EN
SHDN
ADM213E
GND
10
1
INTERNAL 400kΩ PULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
INTERNAL 5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT.
ACTIVE IN SHUTDOWN.
2
3
Figure 11. ADM213E Typical Operating Circuit
Table 6. Pin Function Descriptions
Mnemonic
Function
VCC
Power Supply Input (5 V ± ±0ꢁ).
V+
V–
GND
Internally Generated Positive Supply (+ꢀ V nominal).
Internally Generated Negative Supply (−ꢀ V nominal).
Ground Pin. Must be connected to 0 V.
C±+, C±–
External Capacitor ± is connected between these pins. A 0.± μF capacitor is recommended, but larger capacitors (up to
47 μF) can be used.
C2+, C2–
TIN
External Capacitor 2 is connected between these pins. A 0.± μF capacitor is recommended, but larger capacitors (up to
47 μF) can be used.
Transmitter (Driver) Inputs. These inputs accept TTL/CMOS levels. An internal 400 kΩ pull-up resistor to VCC is connected on
each input.
TOUT
RIN
Transmitter (Driver) Outputs. These are RS-232 signal levels (typically ±ꢀ V).
Receiver Inputs. These inputs accept RS-232 signal levels. An internal 5 kΩ pull-down resistor to GND is connected on
each input.
ROUT
Receiver Outputs. These are TTL/CMOS output logic levels.
EN/EN
Receiver Enable (active high on ADM2±3E, active low on ADM2±±E). This input is used to enable/disable the receiver
outputs. With EN = low for the ADM2±±E (EN = high for the ADM2±3E), the receiver outputs are enabled. With EN = high
for the ADM2±±E (EN = low for the ADM2±3E), the receiver outputs are placed in a high impedance state. (See Table 3
and Table 4.)
SHDN/SHDN Shutdown Control (active low on ADM2±3E, active high on ADM2±±E). When the ADM2±±E is in shutdown, the charge
pump is disabled, the transmitter outputs are turned off, and all receiver outputs are placed in a high impedance state.
When the ADM2±3E is in shutdown, the charge pump is disabled, the transmitter outputs are turned off, and Receiver R± to
Receiver R3 are placed in a high impedance state; Receiver R4 and Receiver R5 on the ADM2±3E continue to operate
normally during shutdown. (See Table 3 and Table 4.) Power consumption for all parts reduces to 5 μW in shutdown.
Rev. E | Page 7 of 20
ASM206E/ASM207E/ASM208E/ASM2±±E/ASM2±3E
TYICAL ERFORMANCE CHARACTERIꢁTICꢁ
80
80
70
70
60
50
40
30
20
10
LIMIT
60
50
40
30
20
10
0
LIMIT
0.33
0.6
1
3
6
18
30
0
LOG FREQUENCY (MHz)
START 30.0MHz
STOP 200.0MHz
Figure 12. EMC Conducted Emissions
Figure 15. EMC Radiated Emissions
9
7
5
3
1
9
7
5
3
1
Tx O/P HI LOADED
Tx O/P HI
–1
–3
–5
–1
–3
Tx O/P LO
–5
–7
–7
–9
Tx O/P LO LOADED
5.5
4.0
4.5
5.0
(V)
6.0
0
500
1000
1500
2000
2500
3000
V
LOAD CAPACITANCE (pF)
CC
Figure 13. Transmitter Output Voltage
High/Low vs. Load Capacitance (230 kbps)
Figure 16. Transmitter Output Voltage vs. Power Supply Voltage
15
10
5
T
SHDN
1
Tx O/P HI
V+
T
2
0
–5
T
3
Tx O/P LO
–10
–15
V–
CH2
5.00V M 50.0µs
CH1
CH3
5.00V
5.00V
CH1
3.1V
0
2
4
6
8
10
LOAD CURRENT (mA)
V+, V– EXITING SHDN
Figure 14. Transmitter Output Voltage vs. Load Current
Figure 17. Charge Pump V+, V− Exiting Shutdown
Rev. E | Page 8 of 20
ASM206E/ASM207E/ASM208E/ASM2±±E/ASM2±3E
350
300
15
V+
10
V–
250
200
5
0
150
100
V+
–5
V–
–10
50
0
–15
4.5
4.7
4.9
5.1
5.3
5.5
0
5
10
15
20
V
(V)
CC
LOAD CURRENT (mA)
Figure 18. Charge Pump Impedance vs. Power Supply Voltage
Figure 19. Charge Pump V+, V− vs. Load Current
Rev. E | Page ꢀ of 20
ASM206E/ASM207E/ASM208E/ASM2±±E/ASM2±3E
THEORY OF OERATION
S1
S2
S3
S4
The ADM206E/ADM207E/ADM208E/ADM2±±E/ADM2±3E
are ruggedized RS-232 line drivers/receivers that operate from a
single 5 V supply. Step-up voltage converters coupled with level
shifting transmitters and receivers allow RS-232 levels to be
developed while operating from a single 5 V supply.
V
V+ = 2V
CC
CC
+
+
C1
C3
GND
V
CC
INTERNAL
OSCILLATOR
Features include low power consumption, high transmission
rates, and compliance with the EU directive on EMC, which
includes protection against radiated and conducted interfere-
ence, including high levels of electrostatic discharge.
Figure 20. Charge Pump Voltage Doubler
S1
S2
S3
S4
V+
GND
FROM
VOLTAGE
DOUBLER
+
+
C2
C4
All RS-232 inputs and outputs contain protection against
electrostatic discharges up to ±±5 kV and electrical fast tran-
sients up to ±2 kV. This ensures compliance to IEC ±00042
and IEC ±00044 requirements.
GND
V– = –(V+)
INTERNAL
OSCILLATOR
Figure 21. Charge Pump Voltage Inverter
The devices are ideally suited for operation in electrically harsh
environments or where RS-232 cables are plugged/unplugged
frequently. They are also immune to high RF field strengths
without special shielding precautions.
Transmitter (Driver) Section
The drivers convert 5 V logic input levels into EIA-232 output
levels. With VCC = 5 V and driving an EIA-232 load, the output
voltage swing is typically ±9 V.
Emissions are also controlled to within very strict limits.
TTL/CMOS technology is used to keep the power dissipation to
an absolute minimum, allowing maximum battery life in
portable applications. The ADM2xxE is a modification,
enhancement, and improvement to the ADM2xx family and its
derivatives. It is essentially plug-in compatible and does not
have materially different applications.
Unused inputs can be left unconnected, as an internal 400 kΩ
pull-up resistor pulls them high, forcing the outputs into a low
state. The input pull-up resistors typically source 8 μA when
grounded, so unused inputs should either be connected to VCC
or left unconnected in order to minimize power consumption.
Receiver Section
CIRCUIT DESCRIPTION
The receivers are inverting level shifters that accept EIA-232 input
levels and translate them into 5 V logic output levels. The inputs
have internal 5 kΩ pull-down resistors to ground and are
protected against overvoltages of up to ±25 V. The guaranteed
switching thresholds are 0.4 V minimum and 2.4 V maximum.
Unconnected inputs are pulled to 0 V by the internal 5 kΩ pull-
down resistor. This, therefore, results in a Logic ± output level for
unconnected inputs or for inputs connected to GND.
The internal circuitry consists of four main sections:
•
•
•
•
A charge pump voltage converter.
5 V logic to EIA-232 transmitters.
EIA-232 to 5 V logic receivers.
Transient protection circuit on all I/O lines.
Charge Pump DC-to-DC Voltage Converter
The charge pump voltage converter consists of a 200 kHz
oscillator and a switching matrix. The converter generates a
±±0 V supply from the input 5 V level. This is done in two
stages using a switched capacitor technique as illustrated in
Figure 20 and Figure 2±. First, the 5 V input supply is doubled
to ±0 V using Capacitor C± as the charge storage element. The
±0 V level is then inverted to generate −±0 V using C2 as the
storage element.
The receivers have Schmitt trigger inputs with a hysteresis level
of 0.65 V. This ensures error-free reception for both noisy
inputs and for inputs with slow transition times.
ENABLE AND SHUTDOWN
Table 3 and Table 4 are truth tables for the enable and shutdown
control signals. The enable function is intended to facilitate data
bus connections where it is desirable to tristate the receiver
outputs. In the disabled mode, all receiver outputs are placed in
a high impedance state. The shutdown function is intended to
shut down the device, thereby minimizing the quiescent
current. In shutdown, all transmitters are disabled and all
receivers on the ADM2±±E are tristated.
Capacitor C3 and Capacitor C4 are used to reduce the output
ripple. If desired, larger capacitors (up to 47 μF) can be used for
Capacitor C± to Capacitor C4. This facilitates direct substitution
with older generation charge pump RS-232 transceivers.
The V+ and V– supplies can also be used to power external
circuitry, if the current requirements are small (see the Typical
Performance Characteristics section).
Rev. E | Page ±0 of 20
ASM206E/ASM207E/ASM208E/ASM2±±E/ASM2±3E
On the ADM2±3E, Receiver R4 and Receiver R5 remain
enabled in shutdown. Note that the transmitters are disabled
protection structure is shown in Figure 24 and Figure 25. Each
input and output contains two back-to-back high speed
but are not tristated in shutdown; it is not permitted to connect
multiple (RS-232) driver outputs together.
clamping diodes. During normal operation, with maximum
RS232 signal levels, the diodes have no effect because one or
the other is reverse biased, depending on the polarity of the
signal. If, however, the voltage exceeds about ±50 V, reverse
breakdown occurs, and the voltage is clamped at this level. The
diodes are large p-n junctions designed to handle the
The shutdown feature is very useful in battery-operated systems
since it reduces the power consumption to ± μW. During
shutdown, the charge pump is also disabled. The shutdown
control input is active high on the ADM2±±E, and it is active
low on the ADM2±3E. When exiting shutdown, the charge
pump is restarted, and it takes approximately ±00 μs for it to
reach its steady state operating condition.
instantaneous current surges that can exceed several amperes.
The transmitter outputs and receiver inputs have a similar
protection structure. The receiver inputs can also dissipate some
of the energy through the internal 5 kΩ resistor to GND as well
as through the protection diodes.
HIGH BAUD RATE
The ADM2xxE feature high slew rates, permitting data
transmission rates well in excess of the EIA-232-E
The protection structure achieves ESD protection up to
±±5 kV and EFT protection up to ±2 kV on all RS-232 I/O
lines. The methods used to test the protection scheme are
discussed in the ESD Testing (IEC ±00042) and EFT/Burst
Testing (IEC ±00044) sections.
specifications. RS-232 levels are maintained at data rates up to
230 kbps, even under worst-case loading conditions. This
allows for high speed data links between two terminals, making
it suitable for the new generation modem standards that require
data rates of 200 kbps. The slew rate is controlled internally to
less than 30 V/μs to minimize EMI interference.
R1
RECEIVER
RX
INPUT
3V
D1
EN INPUT
R
IN
D2
0V
tDR
VOH
Figure 24. Receiver Input Protection Scheme
VOH –0.1V
RECEIVER
OUTPUT
VOL +0.1V
T
OUT
TRANSMITTER
OUTPUT
RX
VOL
D1
D2
NOTES
1. EN IS THE COMPLEMENT OF EN FOR THE ADM213E.
Figure 22. Receiver Disable Timing
Figure 25. Transmitter Output Protection Scheme
3V
EN INPUT
ESD TESTING (IEC 1000-4-2)
0V
IEC ±000-4-2 (previously IEC 80±-2) specifies compliance
testing using two coupling methods, contact discharge and air-
gap discharge. Contact discharge calls for a direct connection to
the unit being tested. Air-gap discharge uses a higher test voltage
but does not make direct contact with the unit under test. With
air-gap discharge, the discharge gun is moved toward the unit
under test, developing an arc across the air gap. This method is
influenced by humidity, temperature, barometric pressure,
distance, and rate of closure of the discharge gun. The contact
discharge method, while less realistic, is more repeatable and is
gaining acceptance in preference to the air-gap method.
tER
+3.5V
RECEIVER
OUTPUT
+0.8V
NOTES
1. EN IS THE COMPLEMENT OF EN FOR THE ADM213E.
Figure 23. Receiver Enable Timing
ESD/EFT TRANSIENT PROTECTION SCHEME
The ADM2xxE use protective clamping structures on all inputs
and outputs that clamp the voltage to a safe level and dissipate
the energy present in ESD (electrostatic) and EFT (electrical
fast transient) discharges. A simplified schematic of the
Although very little energy is contained within an ESD pulse,
the extremely fast rise time, coupled with high voltages, can
cause failures in unprotected semiconductors. Catastrophic
Rev. E | Page ±± of 20
ASM206E/ASM207E/ASM208E/ASM2±±E/ASM2±3E
destruction can occur immediately because of arcing or heating.
Even if catastrophic failure does not occur immediately, the
device can suffer from parametric degradation that can result in
degraded performance. The cumulative effects of continuous
exposure can eventually lead to complete failure.
100
90
I/O lines are particularly vulnerable to ESD damage. Simply
touching or plugging in an I/O cable can result in a static
discharge that can damage or destroy the interface product
connected to the I/O port. Traditional ESD test methods, such
as the MIL-STD-883B method 30±5.7, do not fully test product
susceptibility to this type of discharge. This test was intended to
test product susceptibility to ESD damage during handling.
Each pin is tested with respect to all other pins.
10
0.1ns TO 1ns
TIME t
30ns
60ns
Figure 28. IEC 1000-4-2 ESD Current Waveform
ADM2xxE products are tested using both of the previously
mentioned test methods. Pins are tested with respect to all other
pins as per the MIL-STD-883B specification. In addition, all I/O
pins are tested per the IEC test specification. The products are
tested under the following conditions:
There are some important differences between the traditional
test and the IEC test:
•
The IEC test is much more stringent in terms of discharge
energy. The peak current injected is over four times greater.
The current rise time is significantly faster in the IEC test.
The IEC test is carried out while power is applied to
the device.
•
•
•
•
•
Power on (normal operation).
Power on (shutdown mode).
Power off.
It is possible that the ESD discharge could induce latch-up in
the device being tested. This test, therefore, is more represent-
tative of a real-world I/O discharge, where the equipment is
operating normally with power applied. However, both tests
should be performed to ensure maximum protection both
during handling and later during field service.
There are four levels of compliance defined by IEC ±000-4-2.
ADM2xxE products meet the most stringent compliance level
both for contact and for air-gap discharge. This means that the
products are able to withstand contact discharges in excess of
8 kV and air-gap discharges in excess of ±5 kV.
Table 7. IEC 1000-4-2 Compliance Levels
R1
R2
HIGH
VOLTAGE
GENERATOR
Level Contact Discharge (kV)
Air-Gap Discharge (kV)
DEVICE
±
2
3
4
2
4
6
8
2
4
8
±5
UNDER TEST
C1
ESD TEST METHOD
H. BODY MIL-STD-883B 1.5kΩ
IEC 1000-4-2 330Ω
R2
C1
100pF
150pF
Table 8. ADM2xxE ESD Test Results
ESD Test Method
MIL-STD-883B
IEC ±000-4-2
Contact
Figure 26. ESD Test Standards
I/O Pin (kV)
±±5
100
90
±8
Air-Gap
±±5
EFT/BURST TESTING (IEC 1000-4-4)
IEC ±000-4-4 (previously IEC 80±-4) covers EFT/burst
immunity. Electrical fast transients occur because of arcing
contacts in switches and relays. The tests simulate the
interference generated when, for example, a power relay
disconnects an inductive load. A spark is generated due to the
well-known back EMF effect. In fact, the spark consists of a
36.8
10
tDL
tRL
TIME t
Figure 27. Human Body Model ESD Current Waveform
Rev. E | Page ±2 of 20
ASM206E/ASM207E/ASM208E/ASM2±±E/ASM2±3E
burst of sparks as the relay contacts separate. The voltage
appearing on the line, therefore, consists of a burst of extremely
fast transient impulses. A similar effect occurs when switching
on fluorescent lights.
•
Classification 3: Temporary degradation or loss of function
or performance that requires operator intervention or
system reset.
Classification 4: Degradation or loss of function that is not
recoverable due to damage.
•
The fast transient burst test defined in IEC ±000-4-4 simulates
this arcing; its waveform is illustrated in Figure 29. It consists of
a burst of 2.5 kHz to 5 kHz transients repeating at 300 ms
intervals. It is specified for both power and data lines.
ADM2xxE products meet Classification 2 and have been tested
under worst-case conditions using unshielded cables. Data
transmission during the transient condition is corrupted, but it
can resume immediately following the EFT event without user
intervention.
V
C
R
D
L
R
M
HIGH
C
50Ω
OUTPUT
t
VOLTAGE
SOURCE
300ms
15ms
Z
C
S
C
5ns
V
Figure 30. IEC 1000-4-4 Fast Transient Generator
IEC 1000-4-3 RADIATED IMMUNITY
50ns
IEC ±000-4-3 (previously IEC 80±-3) describes the measure-
ment method and defines the levels of immunity to radiated
electromagnetic fields. It was originally intended to simulate the
electromagnetic fields generated by portable radio transceivers
or any other devices that generate continuous wave-radiated
EM energy. Its scope has since been broadened to include
spurious EM energy that can be radiated from fluorescent
lights, thyristor drives, inductive loads, and other sources.
t
0.2ms/0.4ms
Figure 29. IEC 1000-4-4 Fast Transient Waveform
Table 9.
V Peak (kV)
PSU
V Peak (kV)
I/O
Level
±
2
3
4
0.5
±
2
0.25
0.5
±
Testing for immunity involves irradiating the device with an EM
field. There are various methods of achieving this, including use of
anechoic chamber, stripline cell, TEM cell, and GTEM cell. A
stripline cell consists of two parallel plates with an electric field
developed between them. The device under test is placed within
the cell and exposed to the electric field. There are three severity
levels having field strengths ranging from ± V/m to ±0 V/m.
Results are classified in a similar fashion to those for IEC ±00044.
4
2
A simplified circuit diagram of the actual EFT generator is
illustrated in Figure 30.
The transients are coupled onto the signal lines using an EFT
coupling clamp. The clamp is ± m long and surrounds the cable
completely, providing maximum coupling capacitance (50 pF to
200 pF typical) between the clamp and the cable. High energy
transients are capacitively coupled onto the signal lines. Fast rise
times (5 ns), as specified by the standard, result in very effective
coupling. Because high voltages are coupled onto the signal
lines, this test is very severe. The repetitive transients can often
cause problems where single pulses do not. Destructive latch-up
can be induced due to the high energy content of the transients.
Note that this stress is applied while the interface products are
powered up and are transmitting data. The EFT test applies
hundreds of pulses with higher energy than ESD. Worst-case
transient current on an I/O line can be as high as 40 A.
•
•
Classification ±: Normal operation.
Classification 2: Temporary degradation or loss of function
that is self recoverable when the interfering signal is
removed.
•
•
Classification 3: Temporary degradation or loss of function
that requires operator intervention or system reset when
the interfering signal is removed.
Classification 4: Degradation or loss of function that is not
recoverable due to damage.
The ADM2xxE family of products easily meets Classification ± at
the most stringent requirement (Level 3). In fact, field strengths
up to 30 V/m showed no performance degradation, and error-
free data transmission continued even during irradiation.
Test results are classified according to the following:
•
Classification ±: Normal performance within speci-
fication limits.
•
Classification 2: Temporary degradation or loss of
performance that is self recoverable.
Rev. E | Page ±3 of 20
ASM206E/ASM207E/ASM208E/ASM2±±E/ASM2±3E
Table 10. Test Severity Levels (IEC 1000-4-3)
ø1
ø2
Level
Field Strength (V/m)
±
2
3
±
3
±0
EMISSIONS/INTERFERENCE
SWITCHING GLITCHES
EN 55022, CISPR 22 defines the permitted limits of radiated
and conducted interference from information technology (IT)
equipment. The objective of the standard is to minimize the
level of emissions, both conducted and radiated.
Figure 32. Switching Glitches
80
70
60
50
For ease of measurement and analysis, conducted emissions are
assumed to predominate below 30 MHz, and radiated emissions
are assumed to predominate above 30 MHz.
LIMIT
CONDUCTED EMISSIONS
This is a measure of noise that is conducted onto the line power
supply. Switching transients from the charge pump that are 20 V
in magnitude and that contain significant energy can lead to
conducted emissions. Another source of conducted emissions is
the overlap in switch-on times in the charge pump voltage
converter. In the voltage doubler shown in Figure 3±, if S2 has
not fully turned off before S4 turns on, a transient current glitch
occurs between VCC and GND that results in conducted emis-
sions. Therefore, it is important that the switches in the charge
pump guarantee break-before-make switching under all condi-
tions so instantaneous short-circuit conditions do not occur.
40
30
20
10
0
0.33
0.6
1
3
6
18
30
LOG FREQUENCY (MHz)
Figure 33. Conducted Emissions Plot
RADIATED EMISSIONS
The ADM2xxE have been designed to minimize the switching
transients and ensure break-before-make switching, thereby
minimizing conducted emissions. This results in emission
levels well below specified limits. Other than the recom-
mended 0.± μF capacitor, no additional filtering/decoupling
is required.
Radiated emissions are measured at frequencies in excess of
30 MHz. RS-232 outputs designed for operation at high baud
rates while driving cables can radiate high frequency EM
energy. The previously described causes of conducted emissions
can also cause radiated emissions. Fast RS-232 output tran-
sitions can radiate interference, especially when lightly loaded
and driving unshielded cables. Charge pump devices are also
prone to radiating noise due to the high frequency oscillator
and the high voltages being switched by the charge pump. The
move toward smaller capacitors in order to conserve board
space has resulted in higher frequency oscillators being em-
ployed in the charge pump design, resulting in higher levels of
conducted and radiated emissions.
Conducted emissions are measured by monitoring the line
power supply. The equipment used consists of a line impedance
stabilizing network (LISN) that essentially presents a fixed
impedance at RF and a spectrum analyzer. The spectrum
analyzer scans for emissions up to 30 MHz. A plot for the
ADM2±±E is shown in Figure 33.
S1
S3
V
V+ = 2V
CC
CC
The RS-232 outputs on the ADM2xxE products feature a con-
trolled slew rate in order to minimize the level of radiated
emissions, yet they are fast enough to support data rates of up to
230 kbps.
+
+
C1
C3
S2
S4
GND
V
CC
INTERNAL
OSCILLATOR
Figure 31. Charge Pump Voltage Doubler
Rev. E | Page ±4 of 20
ASM206E/ASM207E/ASM208E/ASM2±±E/ASM2±3E
RADIATED NOISE
80
70
60
50
DUT
TO
RECEIVER
ADJUSTABLE
ANTENNA
TURNTABLE
40
30
20
10
0
LIMIT
Figure 34. Radiated Emissions Test Setup
Figure 35 shows a plot of radiated emissions vs. frequency. The
levels of emissions are well within specifications, without the
need for any additional shielding or filtering components. The
ADM2xxE were operated at maximum baud rates and
configured like a typical RS-232 interface.
START 30.0MHz
STOP 200.0MHz
Figure 35. Radiated Emissions
Testing for radiated emissions was carried out in a shielded
anechoic chamber.
Rev. E | Page ±5 of 20
ASM206E/ASM207E/ASM208E/ASM2±±E/ASM2±3E
OUTLINE SIMENꢁIONꢁ
1.280 (32.51)
1.250 (31.75)
1.230 (31.24)
24
1
13
12
0.280 (7.11)
0.250 (6.35)
0.240 (6.10)
0.325 (8.26)
0.310 (7.87)
0.300 (7.62)
PIN 1
0.100 (2.54)
BSC
0.060 (1.52)
MAX
0.195 (4.95)
0.130 (3.30)
0.115 (2.92)
0.210
(5.33)
MAX
0.015
(0.38)
MIN
0.150 (3.81)
0.130 (3.30)
0.115 (2.92)
0.015 (0.38)
GAUGE
0.014 (0.36)
0.010 (0.25)
0.008 (0.20)
PLANE
SEATING
PLANE
0.022 (0.56)
0.018 (0.46)
0.014 (0.36)
0.430 (10.92)
MAX
0.005 (0.13)
MIN
0.070 (1.78)
0.060 (1.52)
0.045 (1.14)
COMPLIANT TO JEDEC STANDARDS MS-001-AF
CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
CORNER LEADS MAY BE CONFIGURED AS WHOLE OR HALF LEADS.
Figure 36. 24-Lead Plastic Dual In-Line Package [PDIP]
(N-24-1)
Dimensions shown in inches and (millimeters)
15.60 (0.6142)
15.20 (0.5984)
24
13
12
7.60 (0.2992)
7.40 (0.2913)
1
10.65 (0.4193)
10.00 (0.3937)
0.75 (0.0295)
0.25 (0.0098)
45°
2.65 (0.1043)
2.35 (0.0925)
0.30 (0.0118)
0.10 (0.0039)
8°
0°
COPLANARITY
0.10
SEATING
PLANE
0.51 (0.0201)
0.31 (0.0122)
1.27 (0.0500)
BSC
1.27 (0.0500)
0.40 (0.0157)
0.33 (0.0130)
0.20 (0.0079)
COMPLIANT TO JEDEC STANDARDS MS-013-AD
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
Figure 37. 24-Lead Standard Small Outline Package [SOIC_W]
Wide Body
(RW-24)
Dimensions shown in millimeters and (inches)
Rev. E | Page ±6 of 20
ASM206E/ASM207E/ASM208E/ASM2±±E/ASM2±3E
18.10 (0.7126)
17.70 (0.6969)
28
1
15
7.60 (0.2992)
7.40 (0.2913)
10.65 (0.4193)
14
10.00 (0.3937)
0.75 (0.0295)
45°
0.25 (0.0098)
2.65 (0.1043)
2.35 (0.0925)
0.30 (0.0118)
0.10 (0.0039)
8°
0°
COPLANARITY
0.10
SEATING
PLANE
0.51 (0.0201)
0.31 (0.0122)
1.27 (0.0500)
BSC
1.27 (0.0500)
0.40 (0.0157)
0.33 (0.0130)
0.20 (0.0079)
COMPLIANT TO JEDEC STANDARDS MS-013-AE
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
Figure 38. 28-Lead Standard Small Outline Package [SOIC_W]
Wide Body
(RW-28)
Dimensions shown in millimeters and (inches)
8.50
8.20
7.90
13
12
24
5.60
5.30
5.00
8.20
7.80
7.40
1
0.25
0.09
1.85
1.75
1.65
2.00 MAX
8°
4°
0°
0.95
0.75
0.55
0.38
0.22
0.05 MIN
SEATING
PLANE
COPLANARITY
0.10
0.65 BSC
COMPLIANT TO JEDEC STANDARDS MO-150-AG
Figure 39. 24-Lead Shrink Small Outline Package [SSOP]
(RS-24)
Dimensions shown in millimeters
Rev. E | Page ±7 of 20
ASM206E/ASM207E/ASM208E/ASM2±±E/ASM2±3E
10.50
10.20
9.90
15
28
5.60
5.30
5.00
8.20
7.80
7.40
1
14
0.25
0.09
1.85
1.75
1.65
2.00 MAX
8°
4°
0°
0.95
0.75
0.55
0.38
0.22
0.05 MIN
SEATING
PLANE
COPLANARITY
0.10
0.65 BSC
COMPLIANT TO JEDEC STANDARDS MO-150-AH
Figure 40. 28-Lead Shrink Small Outline Package [SSOP]
(RS-28)
Dimensions shown in millimeters
7.90
7.80
7.70
24
13
12
4.50
4.40
4.30
6.40 BSC
1
PIN 1
0.65
BSC
1.20
MAX
0.15
0.05
0.75
0.60
0.45
8°
0°
0.30
0.19
0.20
0.09
SEATING
PLANE
0.10 COPLANARITY
COMPLIANT TO JEDEC STANDARDS MO-153-AD
Figure 41. 24-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-24)
Dimensions shown in millimeters
9.80
9.70
9.60
28
15
4.50
4.40
4.30
6.40 BSC
1
14
PIN 1
0.65
BSC
1.20 MAX
0.15
0.05
8°
0°
0.75
0.60
0.45
0.30
0.19
0.20
0.09
SEATING
PLANE
COPLANARITY
0.10
COMPLIANT TO JEDEC STANDARDS MO-153-AE
Figure 42. 28-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-28)
Dimensions shown in millimeters
Rev. E | Page ±8 of 20
ASM206E/ASM207E/ASM208E/ASM2±±E/ASM2±3E
ORDERING GUIDE
Model
ADM206EAR
ADM206EAR-REEL
ADM206EARZ±
ADM206EARZ-REEL±
Temperature Range
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
Package Description
24-Lead SOIC_W
24-Lead SOIC_W
24-Lead SOIC_W
24-Lead SOIC_W
24-Lead PDIP
Package Option
RW-24
RW-24
RW-24
RW-24
N-24-±
N-24-±
RW-24
RW-24
RW-24
RW-24
RS-24
ADM207EAN
ADM207EANZ±
ADM207EAR
ADM207EAR-REEL
ADM207EARZ±
ADM207EARZ-REEL±
ADM207EARS
ADM207EARS-REEL
ADM207EARU
ADM207EARU-REEL
ADM207EARU-REEL7
ADM207EARUZ±
ADM207EARUZ-REEL7±
ADM208EAN
ADM208EANZ±
ADM208EAR
ADM208EAR-REEL
ADM208EARZ±
ADM208EARZ-REEL±
24-Lead PDIP
24-Lead SOIC_W
24-Lead SOIC_W
24-Lead SOIC_W
24-Lead SOIC_W
24-Lead SSOP
24-Lead SSOP
RS-24
24-Lead TSSOP
24-Lead TSSOP
24-Lead TSSOP
24-Lead TSSOP
24-Lead TSSOP
24-Lead PDIP
RU-24
RU-24
RU-24
RU-24
RU-24
N-24-±
N-24-±
RW-24
RW-24
RW-24
RW-24
RS-24
24-Lead PDIP
24-Lead SOIC_W
24-Lead SOIC_W
24-Lead SOIC_W
24-Lead SOIC_W
24-Lead SSOP
24-Lead SSOP
24-Lead SSOP
24-Lead SSOP
24-Lead TSSOP
24-Lead TSSOP
24-Lead TSSOP
24-Lead TSSOP
24-Lead TSSOP
28-Lead SOIC_W
28-Lead SOIC_W
28-Lead SOIC_W
28-Lead SOIC_W
28-Lead SSOP
28-Lead SSOP
28-Lead SSOP
28-Lead SSOP
28-Lead TSSOP
28-Lead TSSOP
28-Lead TSSOP
28-Lead TSSOP
28-Lead TSSOP
28-Lead TSSOP
ADM208EARS
ADM208EARS-REEL
ADM208EARSZ±
ADM208EARSZ-REEL±
ADM208EARU
ADM208EARU-REEL
ADM208EARU-REEL7
ADM208EARUZ±
ADM208EARUZ-REEL±
ADM2±±EAR
RS-24
RS-24
RS-24
RU-24
RU-24
RU-24
RU-24
RU-24
RW-28
RW-28
RW-28
RW-28
RS-28
RS-28
RS-28
RS-28
RU-28
RU-28
RU-28
RU-28
RU-28
RU-28
ADM2±±EAR-REEL
ADM2±±EARZ±
ADM2±±EARZ-REEL±
ADM2±±EARS
ADM2±±EARS-REEL
ADM2±±EARSZ±
ADM2±±EARSZ-REEL±
ADM2±±EARU
ADM2±±EARU-REEL
ADM2±±EARU-REEL7
ADM2±±EARUZ±
ADM2±±EARUZ-REEL±
ADM2±±EARUZ-REEL7±
Rev. E | Page ±ꢀ of 20
ASM206E/ASM207E/ASM208E/ASM2±±E/ASM2±3E
Model
Temperature Range
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
Package Description
28-Lead SOIC_W
28-Lead SOIC_W
28-Lead SOIC_W
28-Lead SOIC_W
28-Lead SSOP
28-Lead SSOP
28-Lead SSOP
28-Lead SSOP
28-Lead TSSOP
28-Lead TSSOP
28-Lead TSSOP
28-Lead TSSOP
28-Lead TSSOP
28-Lead TSSOP
Package Option
RW-28
RW-28
RW-28
RW-28
RS-28
RS-28
RS-28
RS-28
RU-28
ADM2±3EAR
ADM2±3EAR-REEL
ADM2±3EARZ±
ADM2±3EARZ-REEL±
ADM2±3EARS
ADM2±3EARS-REEL
ADM2±3EARSZ±
ADM2±3EARSZ-REEL±
ADM2±3EARU
ADM2±3EARU-REEL
ADM2±3EARU-REEL7
ADM2±3EARUZ±
ADM2±3EARUZ-REEL±
ADM2±3EARUZ-REEL7±
RU-28
RU-28
RU-28
RU-28
RU-28
± Z = Pb-free part.
©2006 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
C00068-0-9/06(E)
Rev. E | Page 20 of 20
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