ADP198CP-EVALZ_技术文档

Logic Controlled, 1 A, High-Side Load

Switch with Reverse Current Blocking

Data Sheet

ADP198

FEATURES

TYPICAL APPLICATION CIRCUITS

Low RDS_ONof 50 mΩ @ 3.3 V (WLCSP only)

Low input voltage range: 1.65 V to 6.5 V

1 A continuous operating current

ADP198

REVERSE

POLARITY

PROTECTION

VOUT

VIN

+

Built-in level shift for control logic that can be operated by

1.2 V logic

GND

Low 2.5 μA quiescent current @ V_IN= 2.8 V

Low 1.1 μA shutdown current @ V_IN= 2.8 V

Reverse current blocking

LEVEL SHIFT

AND SLEW

RATE CONTROL

LOAD

EN

ON

OFF

Programmable start-up time

Figure 1. WLCSP

Ultrasmall 1 mm × 1 mm, 4-ball, 0.5 mm pitch (WLCSP)

Tiny 8-lead lead frame chip scale package (LFCSP)

2.0 mm × 2.0 mm × 0.55 mm, 0.5 mm pitch

ADP198

REVERSE

POLARITY

PROTECTION

APPLICATIONS

VIN

VOUT

+

Mobile phones

Digital cameras and audio devices

Portable and battery-powered equipment

VIN

SEL0

SLEW

RATE CONTROL

LOAD

SEL1

ON

EN

LEVEL SHIFT

OFF

GND

Figure 2. LFCSP

GENERAL DESCRIPTION

The ADP198 is a high-side load switch designed for operation

between 1.65 V and 6.5 V that is protected against reverse

current flow from output to input. A load switch provides power

domain isolation, thereby helping to keep subsystems isolated and

powered independently and enabling reduced power consumption.

The ADP198 contains a low on-resistance P-channel MOSFET

that supports more than 1 A of continuous load current. The

low 2.5 μA quiescent current and ultralow shutdown current

make the ADP198 ideal for battery-operated portable

equipment. The built-in level shifter for enable logic makes the

ADP198 compatible with modern processors and general-purpose

input/output (GPIO) controllers. The LFCSP version also allows

the user to program the start-up time to control the inrush

current at turn on.

The ADP198 is available in an ultrasmall 1 mm × 1 mm, 4-ball,

0.5 mm pitch WLCSP. An 8-lead, 2 mm × 2 mm × 0.55 mm,

0.5 mm pitch LFCSP is also available.

Rev. D

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

www.analog.com

ADP198

Data Sheet

TABLE OF CONTENTS

Features .............................................................................................. 1

Typical Performance Characteristics ..............................................8

Theory of Operation ...................................................................... 11

Applications Information .............................................................. 12

Ground Current.......................................................................... 12

Enable Feature ............................................................................ 13

Timing.......................................................................................... 14

Diode OR’ing Applications ....................................................... 15

Packaging and Ordering Information ......................................... 16

Outline Dimensions................................................................... 16

Ordering Guide .......................................................................... 16

Applications....................................................................................... 1

Typical Application Circuits............................................................ 1

General Description ......................................................................... 1

Revision History ............................................................................... 2

Specifications..................................................................................... 3

Absolute Maximum Ratings ....................................................... 5

Thermal Data ................................................................................ 5

Thermal Resistance ...................................................................... 5

ESD Caution.................................................................................. 5

Pin Configurations and Function Descriptions ........................... 6

REVISION HISTORY

6/12—Rev. C to Rev. D

Changes to Table Headings in Table 6 ......................................... 14

Added Text to Diode OR’ing Applications Section.................... 15

Updated Outline Dimensions....................................................... 16

4/12—Rev. B to Rev. C

Changes to VOUT Time Parameters ............................................. 3

11/11—Rev. A to Rev. B

Changes to WLCSP Turn-On Delay Time Parameter................. 3

Changes to Ordering Guide .......................................................... 16

10/11—Rev. 0 to Rev. A

Change to Features Section ............................................................. 1

Changes to Table 1, Specifications Section ................................... 3

Change to Ground Current Section............................................. 12

Changes to Enable Feature Section .............................................. 13

Updated Outline Dimensions....................................................... 16

10/11—Revision 0: Initial Version

Rev. D | Page 2 of 16

Data Sheet

ADP198

SPECIFICATIONS

V_IN= 2.8 V, EN = V_IN, I_OUT= 200 mA, T_A= 25°C, unless otherwise noted.

Table 1.

Parameter

INPUT VOLTAGE RANGE

EN INPUT

Symbol Test Conditions/Comments

Min Typ

Max Unit

V_IN

T_J= −40°C to +85°C

1.65

6.5

V

Threshold

High

V_IH

V_IN≤ 5 V, T_J= −40°C to +85°C

5 V < V_IN, T_J= −40°C to +85°C

1.2

1.3

V

Low

V_IL

I_EN

1.65 V ≤ V_IN≤ 6.5 V, T_J= −40°C to +85°C

0.43

13

V

nA

Pull-Down Current

REVERSE BLOCKING

V_OUTCurrent

500

7

V_EN= 0, V_IN= 0, V_OUT= 6.5 V

V_EN= 0, V_IN= 0, V_OUT= 6.5 V, T_J= −40°C to +85°C

µA

mV

Hysteresis

CURRENT

|V_IN− V_OUT

|

75

Quiescent Current

I_Q

I_OUT= 0 mA, T_J= −40°C to +85°C, includes EN pull-down current

V_IN= V_OUT= 2.8 V

2.5

1.1

µA

V_IN= V_OUT= 6.5 V

EN = GND

EN = GND, T_J= −40°C to +85°C

EN = GND, V_OUT= 0 V, T_J= −40°C to +85°C

20

Off State Current

I_OFF

2

VIN to VOUT RESISTANCE

WLCSP

RDS_ON

V_IN= 5 V, I_LOAD= 200 mA, V_EN= 1.5 V

V_IN= 3.3 V, I_LOAD= 200 mA, V_EN= 1.5 V

V_IN= 2.8 V, I_LOAD= 200 mA, V_EN= 1.5 V

V_IN= 1.8 V, I_LOAD= 200 mA, V_EN= 1.5 V

V_IN= 1.65 V, I_LOAD= 200 mA, V_EN= 1.5 V

V_IN= 5 V, I_LOAD= 200 mA, V_EN= 1.5 V

V_IN= 3.3 V, I_LOAD= 200 mA, V_EN= 1.5 V

V_IN= 2.8 V, I_LOAD= 200 mA, V_EN= 1.5 V

V_IN= 1.8 V, I_LOAD= 200 mA, V_EN= 1.5 V

V_IN= 1.65 V, I_LOAD= 200 mA, V_EN= 1.5 V

40

50

60

130

180

75

mΩ

80

LFCSP

120

90

100

120

200

VOUT TIME

WLCSP

Turn-On Delay Time

ADP198ACBZ-11-R7

LFCSP

t_{ON_DLY}

V_IN= 3.6 V, I_LOAD= 200 mA, V_EN= 1.5 V, C_LOAD= 1 μF

7

450

μs

Turn-On Delay Time

t_{ON_DLY}

V_IN= 3.6 V, I_LOAD= 200 mA, V_EN= 1.5 V, C_LOAD= 1 μF; SEL0 = L, SEL1 = L

V_IN= 3.6 V, I_LOAD= 200 mA, V_EN= 1.5 V, C_LOAD= 1 μF; SEL0 = H, SEL1 = L

V_IN= 3.6 V, I_LOAD= 200 mA, V_EN= 1.5 V, C_LOAD= 1 μF; SEL0 = L, SEL1 = H

V_IN= 3.6 V, I_LOAD= 200 mA, V_EN= 1.5 V, C_LOAD= 1 μF; SEL0 = H, SEL1 = H

30

μs

200

450

1100

Rev. D | Page 3 of 16

ADP198

Data Sheet

Timing Diagram

V

EN

TURN-ON

DELAY

TURN-OFF

DELAY

V

OUT

90%

10%

TURN-ON

RISE

TURN-OFF

FALL

Figure 3. Timing Diagram

Rev. D | Page 4 of 16

Data Sheet

ADP198

ABSOLUTE MAXIMUM RATINGS

The junction-to-ambient thermal resistance (θ_JA) of the package

is based on modeling and calculation using a 4-layer board. The

junction-to-ambient thermal resistance is highly dependent on

the application and board layout. In applications where high

maximum power dissipation exists, close attention to thermal

board design is required. The value of θ_JAmay vary, depending on

PCB material, layout, and environmental conditions. The speci-

fied values of θ_JAare based on a 4-layer, 4 inch × 3 inch PCB. Refer

to JESD 51-7 and JESD 51-9 for detailed information regarding

board construction. For additional information, see the AN-617

Application Note, MicroCSP™ Wafer Level Chip Scale Package.

Table 2.

Parameter

Rating

VIN to GND Pins

VOUT to GND Pins

EN to GND Pins

Continuous Drain Current

T_A= 25°C

T_A= 85°C

Storage Temperature Range

Operating Junction Temperature Range

Soldering Conditions

−0.3 V to +7 V

1000 mA

−65°C to +150°C

−40°C to +125°C

JEDEC J-STD-020

Ψ_JBis the junction-to-board thermal characterization parameter

with units of °C/W. The Ψ_JBof the package is based on modeling

and calculation using a 4-layer board. The JESD51-12, Guidelines

for Reporting and Using Package Thermal Information, states that

thermal characterization parameters are not the same as thermal

resistances. Ψ_JBmeasures the component power flowing through

multiple thermal paths rather than a single path as in thermal

resistance, θ_JB. Therefore, Ψ_JBthermal paths include convection

from the top of the package as well as radiation from the package,

factors that make Ψ_JBmore useful in real-world applications.

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

THERMAL DATA

Absolute maximum ratings apply individually only, not in

combination. The ADP198 can be damaged if the junction

temperature limits are exceeded. Monitoring ambient temperature

does not guarantee that T_Jis within the specified temperature

limits. In applications with high power dissipation and poor

thermal resistance, the maximum ambient temperature may

need to be derated.

Maximum junction temperature (T_J) is calculated from the

board temperature (T_B) and power dissipation (P_D) using the

formula

T_J= T_B+ (P_D× Ψ_JB)

Refer to JESD51-8, JESD51-9, and JESD51-12 for more detailed

information about Ψ_JB.

In applications with moderate power dissipation and low

printed circuit board (PCB) thermal resistance, the maximum

ambient temperature can exceed the maximum limit as long

as the junction temperature is within specification limits. The

junction temperature (T_J) of the device is dependent on the

ambient temperature (T_A), the power dissipation of the device

(P_D), and the junction-to-ambient thermal resistance of the

package (θ_JA).

THERMAL RESISTANCE

θ_JAand Ψ_JBare specified for the worst-case conditions, that is, a

device soldered in a circuit board for surface-mount packages.

Table 3. Thermal Resistance

Package Type

θ_JA

θ_JC

Ψ_JB

Unit

4-Ball, 0.5 mm Pitch WLCSP

8-Lead, 2 mm × 2 mm LFCSP

260

72.1

4

58.4 °C/W

42.3 47.1 °C/W

Maximum junction temperature (T_J) is calculated from the

ambient temperature (T_A) and power dissipation (P_D) using the

formula

ESD CAUTION

T_J= T_A+ (P_D× θ_JA)

Rev. D | Page 5 of 16

ADP198

Data Sheet

PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS

1

2

A

VIN

VOUT

TOP VIEW

(Not to Scale)

B

EN

GND

Figure 4. 4-Ball WLCSP Pin Configuration

Table 4. Pin Function Descriptions, WLCSP

Pin No.

Mnemonic

Description

A1

A2

B1

B2

VIN

VOUT

EN

Input Voltage.

Output Voltage.

Enable Input. Drive EN high to turn on the switch and drive EN low to turn off the switch.

Ground.

GND

Rev. D | Page 6 of 16

Data Sheet

ADP198

VOUT

GND

1

2

3

8 VIN

7 VIN

6 EN

ADP198

TOP VIEW

(Not to Scale)

SEL1 4

5 SEL0

NOTES

1. THE EXPOSED PAD IS CONNECTED TO THE SUBSTRATE OF THE ADP198

AND MUST BE CONNECTED TO GROUND.

Figure 5. 8-Lead LFCSP Pin Configuration

Table 5. Pin Function Descriptions, LFCSP

Pin No. Mnemonic Description

1

2

3

4

5

6

7

8

VOUT

GND

SEL1

SEL0

EN

Output Voltage. Connect Pin 1 and Pin 2 together.

Ground.

Select Turn-On Time.

Enable Input. Drive EN high to turn on the switch and drive EN low to turn off the switch.

Input Voltage. Connect Pin 7 and Pin 8 together.

VIN

EP

Exposed Pad. The exposed pad is connected to the substrate of the ADP198 and must be connected to ground.

Rev. D | Page 7 of 16

ADP198

Data Sheet

TYPICAL PERFORMANCE CHARACTERISTICS

0.12

0.10

0.08

0.06

0.25

0.20

0.15

0.10

0.05

0

I

= 10mA

LOAD

I

= 100mA

= 200mA

= 400mA

= 800mA

= 1000mA

LOAD

I

= 100mA

= 200mA

= 400mA

= 800mA

= 1000mA

LOAD

0.04

0.02

0

–40

–5

25

TEMPERATURE (°C)

85

125

1.5

2.0

2.5

3.0

3.5

4.0

(V)

4.5

5.0

5.5

6.0

6.5

V

IN

Figure 6. RDS_ONvs. Temperature, WLCSP

Figure 9. RDS_ONvs. Input Voltage (V_IN), LFCSP

0.16

0.14

0.12

0.10

0.08

0.06

0.04

0.02

0

0.25

V

= 1.65V

= 1.80V

= 2.10V

= 2.50V

= 2.80V

= 3.30V

= 3.80V

= 4.50V

= 5.50V

= 6.50V

IN

0.20

0.15

0.10

0.05

0

I

= 100mA

= 200mA

= 400mA

= 800mA

= 1000mA

LOAD

–40

–5

25

TEMPERATURE (°C)

85

125

10

100

1000

LOAD (mA)

Figure 7. RDS_ONvs. Temperature, LFCSP

Figure 10. Voltage Drop vs. Load Current, WLCSP

0.25

0.20

0.15

0.10

0.05

0

0.25

0.20

0.15

0.10

0.05

0

I

= 10mA

LOAD

V

= 1.65V

= 1.80V

= 2.10V

= 2.50V

= 2.80V

= 3.30V

= 3.80V

= 4.50V

= 5.50V

= 6.50V

IN

I

= 100mA

= 200mA

= 400mA

= 800mA

= 1000mA

LOAD

1.5

2.0

2.5

3.0

3.5

4.0

(V)

4.5

5.0

5.5

6.0

6.5

10

100

1000

V

IN

LOAD (mA)

Figure 8. RDS_ONvs. Input Voltage (V_IN), WLCSP

Figure 11. Voltage Drop vs. Load Current, LFCSP

Rev. D | Page 8 of 16

Data Sheet

ADP198

3.0

2.5

2.0

1.5

1.0

0.5

0.0

INPUT CURRENT

1

OUTPUT VOLTAGE

I

= 100mA

= 200mA

= 400mA

= 800mA

= 1000mA

LOAD

2

ENABLE

3

B

CH1 200mA Ω

CH2 1.00V

M40.0µs

10.20%

A CH3 1.48V

W

–40

–5

25

TEMPERATURE (°C)

85

125

B

T

CH3 2.00V

W

Figure 12. Typical Rise Time and Inrush Current,

V_IN= 1.8 V, I_LOAD= 200 mA, Select Code 00

Figure 15. Ground Current vs. Temperature

20

18

16

14

12

10

8

I

= 10mA

INPUT CURRENT

LOAD

I

= 100mA

= 200mA

= 400mA

= 800mA

= 1000mA

LOAD

1

OUTPUT VOLTAGE

6

2

3

4

ENABLE

2

0

1.5

B

CH1 200mA Ω

CH2 2.00V

M20.0µs

10.20%

A CH3 1.48V

W

2.0

2.5

3.0

3.5

4.0

(V)

4.5

5.0

5.5

6.0

6.5

B

T

CH3 2.00V

W

V

IN

Figure 13. Typical Rise Time and Inrush Current,

V_IN= 3.6 V, I_LOAD= 200 mA, Select Code 00

Figure 16. Ground Current vs. Input Voltage (V_IN)

10

9

8

7

6

5

4

3

2

1

0

V

= 1.65V

= 2.10V

= 2.50V

= 3.30V

= 3.80V

= 5.50V

= 6.50V

IN

INPUT CURRENT

1

2

OUTPUT VOLTAGE

ENABLE

3

B

CH1 500mA Ω

CH2 5.00V

M10.0µs

10.20%

A CH3 1.48V

W

–40

–20

0

20

40

60

80

100

120

B

T

CH3 2.00V

W

TEMPERATURE (°C)

Figure 17. I_GNDShutdown Ground Current vs. Temperature, VOUT Open

Figure 14. Typical Rise Time and Inrush Current,

V_IN= 6.5 V, I_LOAD= 200 mA, Select Code 00

Rev. D | Page 9 of 16

ADP198

Data Sheet

10.00

2.00

1.80

1.60

1.40

1.20

1.00

0.80

0.60

0.40

0.20

0

V

= 1.65V

= 2.10V

= 2.50V

= 3.30V

= 3.80V

= 5.50V

= 6.50V

IN

1.00

0.10

0.01

V

= 1.65V

= 2.10V

= 2.50V

= 3.30V

= 3.80V

= 5.50V

= 6.50V

IN

–40

–20

0

20

40

60

80

100

120

–40

–20

0

20

40

60

80

100

120

TEMPERATURE (°C)

Figure 18. Shutdown Ground Current vs. Temperature, V_OUT= 0 V

Figure 20. Reverse Input Shutdown Current vs. Temperature, V_IN= 0 V

2.00

1.80

1.60

1.40

1.20

1.00

10.00

V

= 1.65V

= 2.10V

= 2.50V

= 3.30V

= 3.80V

= 5.50V

= 6.50V

IN

1.00

0.10

0.01

V

= 1.65V

= 2.10V

= 2.50V

= 3.30V

= 3.80V

= 5.50V

= 6.50V

IN

0.80

0.60

0.40

0.20

0

–40

–20

0

20

40

60

80

100

120

–40

–20

0

20

40

60

80

100

120

TEMPERATURE (°C)

Figure 19. I_OUTShutdown Current vs. Temperature, V_OUT= 0 V

Figure 21. Reverse Shutdown Ground Current vs. Temperature, V_OUT= 0 V

Rev. D | Page 10 of 16

Data Sheet

ADP198

THEORY OF OPERATION

The enable input incorporates a nominal 4 MΩ pull-down

resistor. SEL0 and SEL1 program the start-up time of the load

switch to reduce inrush current when the switch is turned on.

ADP198

REVERSE

POLARITY

PROTECTION

VIN

VOUT

The reverse current protection circuitry prevents current from

flowing backwards through the ADP198 when the output voltage

is greater than the input voltage. A comparator senses the differ-

ence between the input and output voltages. When the difference

between the input voltage and output voltage exceeds 75 m V,

the body of the PFET is switched to VOUT and turned off or

opened. In other words, the gate is connected to VOUT.

SEL0

SEL1

SLEW

RATE CONTROL

EN

LEVEL SHIFT

GND

The packaging is a space-saving 1 mm × 1 mm, 4-ball WLCSP.

The ADP198 is also available in a 2 mm × 2 mm × 0.55 mm,

0.5 mm pitch LFCSP.

Figure 22. Functional Block Diagram

The ADP198 is a high-side PMOS load switch that is designed

for supply operation between 1.65 V and 6.5 V. The PMOS load

switch has a low on resistance of 50 mΩ at V_IN= 3.3 V and

supports 1 A of continuous load current. The ADP198 features

low quiescent current at 2.5 μA typical using a 2.8 V supply.

Rev. D | Page 11 of 16

ADP198

Data Sheet

APPLICATIONS INFORMATION

As shown in Figure 24, an increase in quiescent current can occur

when V_EN≠ V_IN. This is caused by the CMOS logic nature of the

level shift circuitry as it translates a V_ENsignal ≥1.2 V to a logic

high. This increase is a function of the V_IN− V_ENdelta.

60

GROUND CURRENT

The major source for ground current in the ADP198 is an internal

4 MΩ pull-down resistor on the enable pin. Figure 23 shows

the typical ground current when V_EN= V_INand varies from

1.65 V to 6.5 V.

20

50

40

30

20

10

18

I

= 10mA

LOAD

16

14

12

10

8

I

= 100mA

= 200mA

= 400mA

= 800mA

= 1000mA

LOAD

6

4

0

2

0

1

2

3

4

5

6

ENABLE VOLTAGE (V)

0

1.5

2.0

2.5

3.0

3.5

4.0

(V)

4.5

5.0

5.5

6.0

6.5

Figure 24. Typical Ground Current when V_EN≠ V_IN

V

IN

Figure 23. Ground Current vs. Load Current

Rev. D | Page 12 of 16

Data Sheet

ADP198

The EN pin active/inactive thresholds derive from the V_INvoltage;

therefore, these thresholds vary with the changing input voltage.

Figure 26 shows the typical EN active/inactive thresholds when

the input voltage varies from 1.65 V to 6.5 V.

1.2

ENABLE FEATURE

The ADP198 uses the EN pin to enable and disable the VOUT

pin under normal operating conditions. As shown in Figure 25,

when a rising V_ENvoltage crosses the active threshold, VOUT

turns on. When a falling V_ENvoltage crosses the inactive

threshold, VOUT turns off.

1.1

2.0

EN RISE

1.0

EN FALL

1.8

V

RISING

0.9

0.8

0.7

0.6

0.5

0.4

IN

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

FALLING

1

2

3

4

5

6

7

INPUT VOLTAGE (V)

Figure 26. Typical EN Thresholds vs. Input Voltage (V_IN)

0.45

0.50

0.55

0.60

0.65

0.70

0.75

0.80

ENABLE VOLTAGE (V)

Figure 25. Typical EN Operation

As shown in Figure 25, the EN pin has hysteresis built in. This

prevents on/off oscillations that can occur due to noise on the

EN pin as it passes through the threshold points.

Rev. D | Page 13 of 16

ADP198

Data Sheet

TIMING

Turn-on delay is defined as the delta between the time that V_EN

reaches >1.2 V and when V_OUTrises to ~10% of its final value. The

ADP198 includes circuitry to have typical 10 µs turn-on delay at

3.6 V V_INto limit the V_INinrush current.

INPUT CURRENT

1

The rise time is defined as the delta between the time from

10% to 90% of V_OUTreaching its final value. It is dependent on

the RC time constant where C = load capacitance (C_LOAD) and

R = RDS_ON||R_LOAD. Because RDS_ONis usually smaller than R_LOAD

an adequate approximation for RC is RDS_ON× C_LOAD. An input

or load capacitor is not needed for the ADP198; however, capacitors

can be used to suppress noise on the board. If significant load

capacitance is connected, inrush current may be a concern.

OUTPUT VOLTAGE

2

3

,

ENABLE

B

CH1 200mA Ω

CH2 2.00V

M100µs

10.20%

A

CH3 1.48V

W

B

T

CH3 2.00V

W

Figure 29. Typical Rise Time and Inrush Current,

_LOAD= 1 µF, V_IN= 3.6 V, I_LOAD= 200 mA, Code 10

Figure 27 through Figure 30 show the turn-on delay and output

rise time for each of the four settings on SEL0 and SEL1.

C

INPUT CURRENT

1

OUTPUT VOLTAGE

2

3

2

ENABLE

B

ENABLE

3

B

CH1 200mA Ω

CH2 2.00V

M200µs

10.20%

A CH3 1.48V

W

B

W

CH1 200mA Ω

CH2 2.00V

M20.0µs

10.20%

A CH3 1.48V

W

B

T

CH3 2.00V

W

B

T

CH3 2.00V

W

Figure 30. Typical Rise Time and Inrush Current,

_LOAD= 1 µF, V_IN= 3.6 V, I_LOAD= 200 mA, Code 11

Figure 27. Typical Rise Time and Inrush Current,

_LOAD= 1 µF, V_IN= 3.6 V, I_LOAD= 200 mA, Code 00

C

The turn-off time is defined as the delta between the time from

90% to 10% of V_OUTreaching its final value. It is also dependent on

the RC time constant.

Table 6. Start-Up Time Pin Settings

INPUT CURRENT

1

SEL1

SEL0

Start-Up Time (μs)

0

1

0

1

0

1

30

200

450

1100

OUTPUT VOLTAGE

2

3

ENABLE

B

CH1 200mA Ω

CH2 2.00V

M40.0µs

10.20%

A CH3 1.48V

W

B

T

CH3 2.00V

W

Figure 28. Typical Rise Time and Inrush Current,

_LOAD= 1 µF, V_IN= 3.6 V, I_LOAD= 200 mA, Code 01

C

Rev. D | Page 14 of 16

Data Sheet

ADP198

rectifier. For example, at 85°C, the reverse current of a Schottky

rectifier can be as high as 30 μA with only 2.5 V of reverse bias.

DIODE OR’ing APPLICATIONS

6V

Figure 32 shows that about 75 mV of hysteresis built into the

circuitry that senses the voltage differential between the input

and output voltage. When the difference between the input

voltage and output voltage exceeds 75 mV, the ADP198 is

switched on.

LOAD

AC

ADP198

V

=

OUT

V2 – (I × R

LOAD ON

)

VIN

VOUT

1A

+

V2

EN

1

SLOPE =

R

ON

Figure 31. ADP198 in a Typical Diode OR’ing Application

Figure 31 shows an application wherein an ac power supply and

battery are OR’ed together to provide a seamless transition from

the primary (ac) supply to the secondary (V2) supply when the

primary supply is disconnected. By connecting the enable input

of the ADP198 to V2, the transition from ac power to battery

power is automatic.

SCHOTTKY

FORWARD

VOLTAGE

FORWARD VOLTAGE (V)

300mV

Figure 32 shows the forward voltage vs. the forward current

characteristics of a Schottky diode and the ADP198. The low on

resistance of the ADP198 makes it far superior to a Schottky

diode in diode OR’ing applications.

75mV (V

)

HYS

Figure 32. Forward Voltage vs. Forward Current of a Schottky

Diode and ADP198

In addition to low on resistance, the ADP198 reverse leakage

current is much lower than a typical 1 A, 20 V Schottky

Rev. D | Page 15 of 16

ADP198

Data Sheet

PACKAGING AND ORDERING INFORMATION

OUTLINE DIMENSIONS

0.990

0.950

0.910

2

1

A

B

1.065

1.025

0.985

BALL A1

IDENTIFIER

0.50

REF

TOP VIEW

(BALL SIDE DOWN)

BOTTOM VIEW

(BALL SIDE UP)

0.370

0.355

0.340

0.640

0.595

0.550

END VIEW

COPLANARITY

0.05

SEATING

PLANE

0.270

0.240

0.210

0.340

0.320

0.300

Figure 33. 4-Ball Wafer Level Chip Scale Package [WLCSP]

(CB-4-4)

Dimensions shown in millimeters

1.70

1.60

1.50

2.00

BSC SQ

0.50 BSC

8

5

0.175 REF

PIN 1 INDEX

AREA

EXPOSED

PAD

1.10

1.00

0.90

0.425

0.350

0.275

4

1

PIN 1

INDICATOR

(R 0.15)

TOP VIEW

BOTTOM VIEW

FOR PROPER CONNECTION OF

THE EXPOSED PAD, REFER TO

THE PIN CONFIGURATION AND

FUNCTION DESCRIPTIONS

0.60

0.55

0.50

0.05 MAX

0.02 NOM

SECTION OF THIS DATA SHEET.

SEATING

PLANE

0.30

0.25

0.20

0.20 REF

Figure 34. 8-Lead Lead Frame Chip Scale Package [LFCSP_UD]

2.00 × 2.00 mm Body, Ultra Thin, Dual Lead

(CP-8-10)

Dimensions shown in millimeters

ORDERING GUIDE

Temperature

Range

Start-Up

Time (μs)

Package

Option

Model¹

Package Description

Branding

8C

2W

ADP198ACBZ-R7

ADP198ACBZ-11-R7 −40°C to +85°C

−40°C to +85°C

30

1000

4-Ball Wafer Level Chip Scale Package [WLCSP]

CB-4-4

ADP198ACPZ-R7

−40°C to +85°C

Pin selectable: 8-Lead Lead Frame Chip Scale Package [LFCSP_UD] CP-8-10

LJL

30, 200, 450,

and 1000

ADP198CP-EVALZ

Evaluation Board

¹Z = RoHS Compliant Part.

registered trademarks are the property of their respective owners.

D09484-0-6/12(D)

www.analog.com/ADP198

Rev. D | Page 16 of 16


型号：	ADP198CP-EVALZ
厂家：	ADI
描述：	Logic Controlled, 1 A, High-Side Load 逻辑控制， 1 ，高端负载
文件：	总16页 (文件大小：413K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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