HMC327MS8G_技术文档

HMC327MS8G / 327MS8GE

v06.1209

GaAs InGaP HBT MMIC

1/2 WATT POWER AMPLIFIER, 3 - 4 GHz

Typical Applications

Features

The HMC327MS8G(E) is ideal for:

• Wireless Local Loop

High Gain: 21 dB

Saturated Power: +30 dBm @ 45% PAE

Output P1dB: +27 dBm

• WiMAX & Fixed Wireless

• Access Points

Single Supply: +5V

• Subscriber Equipment

Power Down Capability

11

Low External Part Count

Compact MSOP Package: 14.8 mm²

Functional Diagram

General Description

The HMC327MS8G(E) is a high efficiency GaAs

InGaP Heterojunction Bipolar Transistor (HBT) MMIC

power ampliﬁer which operates between 3 and 4 GHz.

The ampliﬁer is packaged in a low cost, surface mo-

unt 8 leaded package with an exposed base for

improved RF and thermal performance. With a mini-

mum of external components, the ampliﬁer provides

21 dB of gain, +30 dBm of saturated power at 45%

PAE from a single +5V supply. Power down capability

is available to conserve current consumption when the

ampliﬁer is not in use.

Electrical Speciﬁcations, T_A= +25 °C, Vs = 5V, Vctl = 5V

Parameter

Min.

17

Typ.

Max.

Units

GHz

dB

Frequency Range

3 - 4

Gain

21

24

Gain Variation Over Temperature

Input Return Loss

0.025

0.035

dB / °C

dB

15

Output Return Loss

8

dB

Output Power for 1dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Noise Figure

24

36

27

dBm

dB

30

40

5

Supply Current (Icq)

Vctl* = 0V/5V

Vctl* = 5V

0.002 / 250

mA

Control Current (Ipd)

7

mA

Switching Speed

tON, tOFF

40

ns

*See Application Circuit for proper biasing conﬁguration.

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders: Analog Devices, Inc.,

_{responsibility is ass}F_umo_er_{d b}p_yr_Ai_nc_ae_log, _Dd_ee_vicl_eiv_se_forr_iy_ts,_ua_sen_{, n}d_ort_foo_{r a}p_nyla_infc_rine_geo_mer_nd_tse_or_fs_pa,_tep_ntl_se_oa_{r o}s_the_ercontact Hittite Microwave Corporation:

^{rights of third parties th}2^at0^maA^{y r}l^ep^suh^lta^fromRⁱo^tsa^usd^e.,^SC^peh^cife^icalm^tions^sf^so^ubr^jd^ec,^{t t}M^{o c}A^han0^ge1^w8^it2^ho4^{ut no}P^tich^eo^{. N}n^oe: _P^O9_hⁿ7_o^e8_n^T_e-^e_:2^c₇5^h₈ⁿ0₁^o_--₃^l3^o₂^g3₉^y_-4₄^W3₇^a₀^y₀F^,_•^Pa^._O^Ox_r:^._d^B9_e^o_r7^x_o8_n⁹-_l¹_i2_n⁰_e5^6,_a0^N_t-_w^o3^r_w^w3_w7^oo_.3_a^d_n^,_a^M_lo^A_g.⁰_c²_o⁰_m^62-9106

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

11 - 2

Application Support: Phone: 1-800-ANALOG-D

Trademarks and registered trademarks are the property of their respective owners.

Order On-line at www.hittite.com

HMC327* PRODUCT PAGE QUICK LINKS

Last Content Update: 11/29/2017

COMPARABLE PARTS

View a parametric search of comparable parts.

DESIGN RESOURCES

• HMC327 Material Declaration

• PCN-PDN Information

EVALUATION KITS

• HMC327MS8G Evaluation Board

• Quality And Reliability

• Symbols and Footprints

DOCUMENTATION

Application Notes

DISCUSSIONS

View all HMC327 EngineerZone Discussions.

• Broadband Biasing of Amplifiers General Application Note

• MMIC Amplifier Biasing Procedure Application Note

SAMPLE AND BUY

• Thermal Management for Surface Mount Components

Visit the product page to see pricing options.

General Application Note

Data Sheet

TECHNICAL SUPPORT

• HMC327 Data Sheet

Submit a technical question or find your regional support

number.

TOOLS AND SIMULATIONS

DOCUMENT FEEDBACK

• HMC327 S-Parameter

Submit feedback for this data sheet.

REFERENCE MATERIALS

Product Selection Guide

• RF, Microwave, and Millimeter Wave IC Selection Guide

2017

Quality Documentation

• HMC Legacy PCN: MS##, MS##E and MS##G,MS##GE

packages - Relocation of pre-existing production

equipment to new building

• Package/Assembly Qualification Test Report: MS8G (QTR:

2014-00393)

• PCN: MS, QS, SOT, SOIC Packages - Sn/Pb Plating Vendor

Change

• Semiconductor Qualification Test Report: GaAs HBT-B

(QTR: 2013-00229)

This page is dynamically generated by Analog Devices, Inc., and inserted into this data sheet. A dynamic change to the content on this page will not

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HMC327MS8G / 327MS8GE

v05.0509

GaAs InGaP HBT MMIC

1/2 WATT POWER AMPLIFIER, 3 - 4 GHz

Broadband Gain & Return Loss

Gain vs. Temperature

25

15

5

24

20

16

S21

S11

S22

+25 C

+85 C

-40 C

12

8

-5

11

-15

-25

4

0

2

2.5

3

3.5

4

4.5

5

2.5

3

3.5

FREQUENCY (GHz)

4

4.5

FREQUENCY (GHz)

Input Return Loss vs. Temperature

Output Return Loss vs. Temperature

0

+25 C

+85 C

-40 C

-5

-10

-15

-20

-25

-30

+85 C

-40 C

-3

-6

-9

-12

-15

2.5

3

3.5

FREQUENCY (GHz)

4

2.5

3

3.5

4

4.5

FREQUENCY (GHz)

P1dB vs. Temperature

Psat vs. Temperature

34

30

26

22

18

14

30

26

22

18

14

+25 C

+85 C

-40 C

+25 C

+85 C

-40 C

2.5

3

3.5

FREQUENCY (GHz)

4

4.5

2.5

3

3.5

FREQUENCY (GHz)

4

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders: Analog Devices, Inc.,

_{responsibility is ass}F_umo_er_{d b}p_yr_Ai_nc_ae_log, _Dd_ee_vicl_eiv_se_forr_iy_ts,_ua_sen_{, n}d_ort_foo_{r a}p_nyla_infc_rine_geo_mer_nd_tse_or_fs_pa,_tep_ntl_se_oa_{r o}s_the_ercontact Hittite Microwave Corporation:

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

rights of third parties that may result from its use. Specifications subject to change without notice. No

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registered trademarks are the property of their respective owners.

11 - 3

Order On-line at www.hittite.com

HMC327MS8G / 327MS8GE

v05.0509

GaAs InGaP HBT MMIC

1/2 WATT POWER AMPLIFIER, 3 - 4 GHz

Power Compression @ 3.5 GHz

Output IP3 vs. Temperature

48

40

32

24

16

8

44

Pout

Gain

PAE

39

34

+25 C

+85 C

-40 C

29

24

19

14

11

0

-5

-1

3

7

11

15

2.5

3

3.5

FREQUENCY (GHz)

4

4.5

INPUT POWER (dBm)

Noise Figure vs. Temperature

Gain & Power vs. Supply Voltage

10

32

28

+25 C

+85 C

-40 C

8

6

4

2

0

30

28

26

24

22

26

24

22

20

P1dB

Psat

Gain

18

4.75

3

3.5

4

4.5

5

5.25

FREQUENCY (GHz)

Vcc SUPPLY VOLTAGE (V)

Reverse Isolation vs. Temperature

Power Down Isolation

0

-10

-20

-30

-40

+25 C

+85 C

-40 C

-20

-30

-40

-50

-60

2.5

3

3.5

FREQUENCY (GHz)

4

4.5

2.5

3

3.5

4

4.5

FREQUENCY (GHz)

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders: Analog Devices, Inc.,

_{responsibility is ass}F_umo_er_{d b}p_yr_Ai_nc_ae_log, _Dd_ee_vicl_eiv_se_forr_iy_ts,_ua_sen_{, n}d_ort_foo_{r a}p_nyla_infc_rine_geo_mer_nd_tse_or_fs_pa,_tep_ntl_se_oa_{r o}s_the_ercontact Hittite Microwave Corporation:

^{rights of third parties th}2^at0^maA^{y r}l^ep^suh^lta^fromRⁱo^tsa^usd^e.,^SC^peh^cife^icalm^tions^sf^so^ubr^jd^ec,^{t t}M^{o c}A^han0^ge1^w8^it2^ho4^{ut no}P^tich^eo^{. N}n^oe: _P^O9_hⁿ7_o^e8_n^T_e-^e_:2^c₇5^h₈ⁿ0₁^o_--₃^l3^o₂^g3₉^y_-4₄^W3₇^a₀^y₀F^,_•^Pa^._O^Ox_r:^._d^B9_e^o_r7^x_o8_n⁹-_l¹_i2_n⁰_e5^6,_a0^N_t-_w^o3^r_w^w3_w7^oo_.3_a^d_n^,_a^M_lo^A_g.⁰_c²_o⁰_m^62-9106

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

11 - 4

Application Support: Phone: 1-800-ANALOG-D

Trademarks and registered trademarks are the property of their respective owners.

Order On-line at www.hittite.com

HMC327MS8G / 327MS8GE

v05.0509

GaAs InGaP HBT MMIC

1/2 WATT POWER AMPLIFIER, 3 - 4 GHz

Gain, Power & Quiescent Supply

Absolute Maximum Ratings

Current vs. Vpd @ 3.5 GHz

250

200

150

100

50

30

Collector Bias Voltage (Vcc)

+5.5V

Control Voltage (Vpd)

+5.5V

25

RF Input Power (RFIN)(Vs = Vctl = +5V)

Junction Temperature

+16 dBm

150 °C

20

Icq

Continuous Pdiss (T = 85 °C)

(derate 29 mW/°C above 85 °C)

1.88 W

15

10

5

Thermal Resistance

(junction to ground paddle)

34 °C/W

11

P1dB

Psat

Gain

Storage Temperature

Operating Temperature

-65 to +150 °C

-40 to +85 °C

0

2.5

3

3.5

4

4.5

5

Vctl (V)

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Outline Drawing

NOTES:

1. LEADFRAME MATERIAL: COPPER ALLOY

2. DIMENSIONS ARE IN INCHES [MILLIMETERS]

3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO

PCB RF GROUND.

Package Information

Part Number

Package Body Material

Lead Finish

MSL Rating

MSL1 ^[1]

Package Marking ^[3]

H327

XXXX

HMC327MS8G

HMC327MS8GE

Low Stress Injection Molded Plastic

Sn/Pb Solder

H327

XXXX

MSL1 ^[2]

RoHS-compliant Low Stress Injection Molded Plastic

100% matte Sn

[1] Max peak reﬂow temperature of 235 °C

[2] Max peak reﬂow temperature of 260 °C

[3] 4-Digit lot number XXXX

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders: Analog Devices, Inc.,

_{responsibility is ass}F_umo_er_{d b}p_yr_Ai_nc_ae_log, _Dd_ee_vicl_eiv_se_forr_iy_ts,_ua_sen_{, n}d_ort_foo_{r a}p_nyla_infc_rine_geo_mer_nd_tse_or_fs_pa,_tep_ntl_se_oa_{r o}s_the_ercontact Hittite Microwave Corporation:

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

rights of third parties that may result from its use. Specifications subject to change without notice. No

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registered trademarks are the property of their respective owners.

11 - 5

Order On-line at www.hittite.com

HMC327MS8G / 327MS8GE

v05.0509

GaAs InGaP HBT MMIC

1/2 WATT POWER AMPLIFIER, 3 - 4 GHz

Pin Descriptions

Pin Number

Function

Description

Interface Schematic

Power Control Pin. For proper control bias, this pin should be con-

nected to 5V through a series resistor of 130 Ohms. A higher voltage is

not recommended. For lower idle current, this voltage can be reduced.

1

Vpd

11

Ground: Backside of package has exposed metal ground paddle that

must be connected to ground thru a short path. Vias under the device

are required.

2, 4, 7

3

GND

RFIN

This pin is AC coupled

and matched to 50 Ohms.

RF output and bias for the output stage. The power supply for the

output device needs to be supplied to these pins.

5, 6

RFOUT

Power supply voltage for the ﬁrst ampliﬁer stage. An external bypass

capacitor of 330 pF is required. This capacitor should be placed as

close to the device as possible.

8

Vcc

Application Circuit

TL1

TL2

TL3

50 Ohm

0.1”

Impedance

Length

50 Ohm

0.038”

50 Ohm

0.231”

Note: C3 should be located <0.020” from Pin 8 (Vcc)

Note: C2 Should be located < 0.020” from L1

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders: Analog Devices, Inc.,

_{responsibility is ass}F_umo_er_{d b}p_yr_Ai_nc_ae_log, _Dd_ee_vicl_eiv_se_forr_iy_ts,_ua_sen_{, n}d_ort_foo_{r a}p_nyla_infc_rine_geo_mer_nd_tse_or_fs_pa,_tep_ntl_se_oa_{r o}s_the_ercontact Hittite Microwave Corporation:

^{rights of third parties th}2^at0^maA^{y r}l^ep^suh^lta^fromRⁱo^tsa^usd^e.,^SC^peh^cife^icalm^tions^sf^so^ubr^jd^ec,^{t t}M^{o c}A^han0^ge1^w8^it2^ho4^{ut no}P^tich^eo^{. N}n^oe: _P^O9_hⁿ7_o^e8_n^T_e-^e_:2^c₇5^h₈ⁿ0₁^o_--₃^l3^o₂^g3₉^y_-4₄^W3₇^a₀^y₀F^,_•^Pa^._O^Ox_r:^._d^B9_e^o_r7^x_o8_n⁹-_l¹_i2_n⁰_e5^6,_a0^N_t-_w^o3^r_w^w3_w7^oo_.3_a^d_n^,_a^M_lo^A_g.⁰_c²_o⁰_m^62-9106

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

11 - 6

Application Support: Phone: 1-800-ANALOG-D

Trademarks and registered trademarks are the property of their respective owners.

Order On-line at www.hittite.com

HMC327MS8G / 327MS8GE

v05.0509

GaAs InGaP HBT MMIC

1/2 WATT POWER AMPLIFIER, 3 - 4 GHz

Evaluation PCB

11

List of Materials for Evaluation PCB 104991 ^[1]

The circuit board used in the application should

use RF circuit design techniques. Signal lines sho-

uld have 50 Ohm impedance while the package

ground leads and exposed paddle should be con-

nected directly to the ground plane similar to that

shown. A sufficient number of via holes should be

used to connect the top and bottom ground planes.

The evaluation board should be mounted to an

appropriate heat sink. The evaluation circuit board

shown is available from Hittite upon request.

Item

J1 - J2

J3

Description

PCB Mount SMA RF Connector

2 mm DC Header

C1 - C3

C4

330 pF Capacitor, 0603 Pkg.

1.2 pF Capacitor, 0603 Pkg.

2 pF Capacitor, 0402 Pkg.

2.2 μF Capacitor, Tantalum

3 nH Inductor, 0805 Pkg.

130 Ohm Resistor, 0603 Pkg.

HMC327MS8G(E) Ampliﬁer

104829 Eval Board

C5

C6

L1

R1

U1

[2]

PCB

[1] Reference this number when ordering complete evaluation PCB

[2] Circuit Board Material: Rogers 4350

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders: Analog Devices, Inc.,

_{responsibility is ass}F_umo_er_{d b}p_yr_Ai_nc_ae_log, _Dd_ee_vicl_eiv_se_forr_iy_ts,_ua_sen_{, n}d_ort_foo_{r a}p_nyla_infc_rine_geo_mer_nd_tse_or_fs_pa,_tep_ntl_se_oa_{r o}s_the_ercontact Hittite Microwave Corporation:

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

rights of third parties that may result from its use. Specifications subject to change without notice. No

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registered trademarks are the property of their respective owners.

11 - 7

Order On-line at www.hittite.com


型号：	HMC327MS8G
厂家：	ADI
描述：	MMIC Power Amplifier SMT, 3 - 4 GHz 射频微波
文件：	总7页 (文件大小：360K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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