HMC490LP5ETR [ADI]

Wide Band Medium Power Amplifier, 12000MHz Min, 16000MHz Max, 5 X 5 MM, ROHS COMPLIANT, PLASTIC, LEADLESS, SMT, QFN-32;


型号：	HMC490LP5ETR
厂家：	ADI
描述：	Wide Band Medium Power Amplifier, 12000MHz Min, 16000MHz Max, 5 X 5 MM, ROHS COMPLIANT, PLASTIC, LEADLESS, SMT, QFN-32 射频微波
文件：	总6页 (文件大小：241K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HMC490LP5 / 490LP5E

v03.1109

GaAs PHEMT MMIC LOW NOISE

HIGH IP3 AMPLIFIER, 12 - 16 GHz

Typical Applications

The HMC490LP5(E) is ideal for:

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• VSAT

Features

Noise Figure: 2.5 dB

P1dB Output Power: +25 dBm

Gain: 23 dB

Output IP3: +34 dBm

+5V Supply

• Military EW, ECM & C³I

50 Ohm Matched Input/Output

32 Lead 5x5mm SMT Package: 25mmꢀ

Functional Diagram

General Description

The HMC490LP5(E) is a high dynamic range GaAs

PHEMT MMIC Low Noise Ampliﬁer which operates

between 12 and 16 GHz. The HMC490LP5(E) provides

23 dB of gain, 2.5 dB noise ﬁgure and an output IP3

of +34 dBm from a +5V supply voltage. This versatile

ampliﬁer combines excellent, stable +25 dBm P1dB

output power with very low noise ﬁgure making it ideal

for receive and transmit applications. The ampliﬁer is

packaged in a leadless 5x5 mm QFN surface mount

package.

Electrical Speciﬁcations, T_A= +25° C, Vdd = 5V, Idd = 200 mA*

Parameter

Min.

Typ.

12 - 16

Max.

Units

GHz

Frequency Range

Gain

Gain Variation Over Temperature

Noise Figure

0.03

2.5

0.04

3.5

dB/ °C

Input Return Loss

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

dBm

Output Third Order Intercept (IP3)

Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.)

* Adjust Vgg between -2 to 0V to achieve Idd = 200 mA typical.

200

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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HMC490LP5 / 490LP5E

v03.1109

GaAs PHEMT MMIC LOW NOISE

HIGH IP3 AMPLIFIER, 12 - 16 GHz

Broadband Gain & Return Loss

Gain vs. Temperature

S21

S11

S22

+25 C

+85 C

-40 C

-10

-20

FREQUENCY (GHz)

Input Return Loss vs. Temperature

Output Return Loss vs. Temperature

+25 C

-2

+25 C

+85 C

-4

-40 C

-4

-8

-6

-8

-12

-16

-20

-10

-12

-14

FREQUENCY (GHz)

Noise Figure vs. Temperature

Output IP3 vs. Temperature

+25 C

+85 C

-40 C

+25 C

+85 C

-40 C

FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

8 - 131

HMC490LP5 / 490LP5E

v03.1109

GaAs PHEMT MMIC LOW NOISE

HIGH IP3 AMPLIFIER, 12 - 16 GHz

P1dB vs. Temperature

Psat vs. Temperature

+25 C

+85 C

-40 C

+25 C

+85 C

-40 C

FREQUENCY (GHz)

Gain, Noise Figure & OIP3 vs.

Supply Voltage @ 14 GHz, Idd= 200 mA

Power Compression @ 14 GHz

Noise Figure

Gain

IP3

Pout (dBm)

Gain (dB)

PAE (%)

-20

-15

-10

-5

3.5

4.5

5.5

INPUT POWER (dBm)

Vdd (V)

Gain, Noise Figure & IP3 vs.

Supply Current @ 14 GHz, Vdd= 5V*

Reverse Isolation vs. Temperature

-10

+25 C

+85 C

-40 C

-20

-30

-40

-50

-60

-70

Gain

IP3

Noise Figure

100

125

150

175

200

FREQUENCY (GHz)

Idd (mA)

* Idd is controlled by varying Vgg

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

8 - 132

HMC490LP5 / 490LP5E

v03.1109

GaAs PHEMT MMIC LOW NOISE

HIGH IP3 AMPLIFIER, 12 - 16 GHz

Typical Supply Current vs. Vdd

Absolute Maximum Ratings

Drain Bias Voltage (Vdd1, Vdd2, Vdd3)

+5.5V

Vdd (V)

Idd (mA)

Gate Bias Voltage (Vgg)

-4 to 0V

+3.0

140

RF Input Power (RFIN)(Vdd = +5V)

Channel Temperature

+10 dBm

175 °C

+3.5

+4.0

154

168

Continuous Pdiss (T = 85 °C)

(derate 29 mW/°C above 85 °C)

+4.5

+5.0

188

2.65 W

200

Thermal Resistance

(channel to ground paddle)

+5.5

208

34 °C/W

Storage Temperature

Operating Temperature

-65 to +150 °C

-40 to +85 °C

Note: Ampliﬁer will operate over full voltage ranges shown

above.

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Outline Drawing

NOTES:

1. LEADFRAME MATERIAL: COPPER ALLOY

2. DIMENSIONS ARE IN INCHES [MILLIMETERS]

3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.

4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.

PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.

5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.

6. ALL GROUND LEADS AND GROUND PADDLE MUST BE

SOLDERED TO PCB RF GROUND.

7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED

LAND PATTERN.

Package Information

Part Number

Package Body Material

Lead Finish

MSL Rating

MSL1 ^[1]

Package Marking ^[3]

H490

XXXX

HMC490LP5

Low Stress Injection Molded Plastic

Sn/Pb Solder

H490

XXXX

MSL1 ^[2]

HMC490LP5E

RoHS-compliant Low Stress Injection Molded Plastic

100% matte Sn

[1] Max peak reﬂow temperature of 235 °C

[2] Max peak reﬂow temperature of 260 °C

[3] 4-Digit lot number XXXX

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

8 - 133

HMC490LP5 / 490LP5E

v03.1109

GaAs PHEMT MMIC LOW NOISE

HIGH IP3 AMPLIFIER, 12 - 16 GHz

Pin Descriptions

Pin Number

Function

Description

Interface Schematic

1, 2, 6 - 12,

14 - 19, 23, 24,

26, 27, 29 - 31

The pins are not connected internally; however, all data

shown herein was measured with these pins connected to

RF/DC ground externally.

N/C

Package bottom must also

be connected to RF/DC ground.

3, 5, 20, 22

GND

RFIN

This pad is AC coupled

and matched to 50 Ohms.

Gate control for ampliﬁer. Adjust to achieve Idd of 200 mA.

Please follow “MMIC Ampliﬁer Biasing Procedure”

Application Note. External bypass capacitors of 100 pF and

0.01 μF are required.

Vgg

This pad is AC coupled

and matched to 50 Ohms.

RFOUT

Power Supply Voltage for the ampliﬁer. External bypass

capacitors of 100 pF and 0.01 μF are required.

25, 28, 32

Vdd3, 2, 1

Application Circuit

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

8 - 134

HMC490LP5 / 490LP5E

v03.1109

GaAs PHEMT MMIC LOW NOISE

HIGH IP3 AMPLIFIER, 12 - 16 GHz

Evaluation PCB

List of Materials for Evaluation PCB 108402 ^[1]

The circuit board used in the application should use

RF circuit design techniques. Signal lines should

have 50 Ohm impedance while the package ground

leads and package bottom should be connected

directly to the ground plane similar to that shown.

A sufficient number of via holes should be used

to connect the top and bottom ground planes.

The evaluation board should be mounted to an

appropriate heat sink. The evaluation circuit board

shown is available from Hittite upon request.

Item

Description

J1 - J2

J3 - J8

C1 - C4

C5 - C8

PCB Mount SMA Connector

DC Pin

1000 pF Capacitor, 0402 Pkg.

4.7 μF Capacitor, Tantalum

HMC490LP5 / HMC490LP5E

108540 Evaluation PCB

[2]

PCB

[1] Reference this number when ordering complete evaluation PCB

[2] Circuit Board Material: Rogers 4350

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

8 - 135

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