HMC553AG [ADI]
6 GHz to 14 GHz, GaAs, MMIC, Double-Balanced Mixer;
| 型号： | HMC553AG |
| 厂家： | 
ADI |
| 描述： | 6 GHz to 14 GHz, GaAs, MMIC, Double-Balanced Mixer |
| 文件： | 总27页 (文件大小：488K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
6 GHz to 14 GHz, GaAs, MMIC,
Double-Balanced Mixer
HMC553ACHIPS
Data Sheet
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Passive: no dc bias required
Conversion loss: 10 dB maximum
Input IP3 up to 21 dBm typical
HMC553ACHIPS
LO
RF
LO to RF isolation: 37 dB typical
Wide IF bandwidth: dc to 5 GHz
7-pad, 0.950 mm × 0.750 mm, RoHS compliant, bare die
GND
GND
APPLICATIONS
Microwave and very small aperture terminal (VSAT) radios
Test equipment
GND
IF
GND
Point to point radios
Figure 1.
Military electronic warfare (EW), electronic countermeasure
(ECM), and command, control, communications and
intelligence (C3I)
GENERAL DESCRIPTION
The HMC553ACHIPS is a general-purpose, double balanced,
monolithic microwave integrated circuit (MMIC) mixer that
can be used as an upconverter or a downconverter between
6 GHz and 14 GHz. This mixer is fabricated in a gallium
arsenide (GaAs), metal semiconductor field effect transistor
(MESFET) process and requires no external components or
matching circuitry.
The HMC553ACHIPS provides high local oscillator (LO) to RF
and LO to intermediate frequency (IF) suppression due to
optimized balun structures for as low as 32 dB and 28 dB,
respectively. The mixer operates with LO drive levels from
9 dBm to 15 dBm.
Rev. 0
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed byAnalog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result fromits use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksare the property oftheir respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Technical Support
©2019 Analog Devices, Inc. All rights reserved.
www.analog.com
HMC553ACHIPS
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
IF Bandwidth .............................................................................. 20
Spurious and Harmonics Performance ................................... 22
Theory of Operation ...................................................................... 23
Applications Information.............................................................. 24
Typical Application Circuit ....................................................... 24
Mounting and Bonding Techniques ........................................ 25
Handling Precautions ................................................................ 25
Mounting..................................................................................... 25
Wire Bonding.............................................................................. 25
Assembly Diagram..................................................................... 26
Outline Dimensions....................................................................... 27
Ordering Guide .......................................................................... 27
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 4
ESD Caution.................................................................................. 4
Pin Configuration and Function Descriptions............................. 5
Interface Schematics .................................................................... 5
Typical Performance Characteristics ............................................. 6
Downconverter Performance...................................................... 6
Upconverter Performance......................................................... 14
Isolation and Return Loss.......................................................... 18
REVISION HISTORY
12/2019—Revision 0: Initial Version
Rev. 0 | Page 2 of 27
Data Sheet
HMC553ACHIPS
SPECIFICATIONS
TA = 25°C, IF = 100 MHz, RF = −10 dBm, and LO = +13 dBm, upper sideband. All measurements performed as a downconverter, unless
otherwise noted.
Table 1.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
FREQUENCY RANGE
RF
LO
6
6
DC
9
14
14
5
GHz
GHz
GHz
dBm
IF
LO DRIVE LEVELS
6 GHz to 11 GHz PERFORMANCE
Downconverter
Conversion Loss
Noise Figure
Input Third-Order Intercept
Input 1 dB Compression Point
Input Second-Order Intercept
Upconverter
Conversion Loss
Input Third-Order Intercept
Input 1 dB Compression Point
Isolation
13
15
7.5
7.5
17.5
9.5
40
9
dB
dB
dBm
dBm
dBm
Taken with external LO amplifier
1 MHz separation between inputs
IP3
P1dB
IP2
15
1 MHz separation between inputs
1 MHz separation between inputs
6
17
8
dB
dBm
dBm
IP3
P1dB
RF to IF
LO to RF
LO to IF
19
32
30
30
37
33
dB
dB
dB
Return Loss
RF
LO
LO frequency = 10 GHz
LO power = 11 dBm
12
10
dB
dB
11 GHz to 14 GHz PERFORMANCE
Downconverter
Conversion Loss
Noise Figure
Input Third-Order Intercept
Input 1 dB Compression Point
Input Second-Order Intercept
Upconverter
Conversion Loss
Input Third-Order Intercept
Input 1 dB Compression Point
Isolation
8
8
21
10.5
44
10
dB
dB
dBm
dBm
dBm
Taken with external LO amplifier
1 MHz separation between inputs
IP3
P1dB
IP2
20
1 MHz separation between inputs
1 MHz separation between inputs
7
17
7.5
dB
dBm
dBm
IP3
P1dB
RF to IF
LO to RF
LO to IF
20
32
28
25
37
35
dB
dB
dB
Return Loss
RF
LO
LO frequency = 10 GHz
LO power = 11 dBm
15
11
dB
dB
Rev. 0 | Page 3 of 27
HMC553ACHIPS
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 2.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Parameter
Input Power
RF
LO
Rating
25 dBm
25 dBm
25 dBm
3 mA
IF
IF Source and Sink Current
Continuous Power Dissipation, PDISS
414 mW
(TA = 85°C, Derate 4.6 mW/°C Above 85°C)
Temperature
ESD CAUTION
Reflow
260°C
Junction
175°C
Operating Range
Storage Range
−40°C to +85°C
−65°C to +150°C
Electrostatic Discharge (ESD) Sensitivity
Human Body Model (HBM)
Field Induced Charged Device Model
(FICDM)
1000 V
1250 V
Rev. 0 | Page 4 of 27
Data Sheet
HMC553ACHIPS
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
LO
2
1
3
4
RF
HMC553ACHIPS
TOP VIEW
(Not to Scale)
GND
GND
7
6
5
GND
IF
GND
Figure 2. Pad Configuration
Table 3. Pad Function Descriptions
Pad No.
Mnemonic Description
1, 4, 5, 7
GND
LO
RF
Ground. These GND pads must be connected to RF and dc ground.
LO Port. The LO pad is ac-coupled and matched to 50 Ω.
RF Port. The RF pad is ac-coupled and matched to 50 Ω.
IF Port. The IF pad is dc-coupled. For applications not requiring operation to dc, dc block the IF pad externally
using a series capacitor of a value chosen to pass the necessary IF frequency range. For operation to dc, the IF
pad must not source or sink more than 3 mA of current because die malfunction and possible die failure may result.
2
3
6
IF
Die Bottom GND
Ground. The die bottom must be attached directly to the ground plane eutectically or with conductive epoxy.
INTERFACE SCHEMATICS
GND
IF
Figure 3. GND Interface Schematic
Figure 5. IF Interface Schematic
RF
LO
Figure 4. LO Interface Schematic
Figure 6. RF Interface Schematic
Rev. 0 | Page 5 of 27
HMC553ACHIPS
Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
DOWNCONVERTER PERFORMANCE
IF = 100 MHz, Upper Sideband (Low-Side LO)
0
0
–5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
–5
–10
–15
–20
–10
–15
–20
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 7. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 10. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
30
LO = 9dBm
LO = 11dBm
LO = 13dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
25
20
15
10
5
25
LO = 15dBm
20
15
10
5
0
0
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 8. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 11. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
20
15
10
5
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
0
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
Figure 9. Noise Figure vs. RF Frequency at Various Temperatures,
LO = 13 dBm, Measurement Taken with an External LO Amplifier
Rev. 0 | Page 6 of 27
Data Sheet
HMC553ACHIPS
Input P1dB and Input IP2, Upper Sideband (Low-Side LO)
20
20
15
10
5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
15
10
5
0
0
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 12. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 14. Input P1dB vs. RF Frequency at Various LO Power Levels,
TA = 25°C
80
80
LO = 9dBm
LO = 11dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
LO = 13dBm
LO = 15dBm
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 13. Input IP2 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 15. Input IP2 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Rev. 0 | Page 7 of 27
HMC553ACHIPS
Data Sheet
IF = 100 MHz, Lower Sideband (High-Side LO)
0
0
–5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
–5
–10
–15
–20
–10
–15
–20
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 16. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 19. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
30
LO = 9dBm
LO = 11dBm
LO = 13dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
25
20
15
10
5
LO = 15dBm
25
20
15
10
5
0
0
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 20. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Figure 17. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
20
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
15
10
5
0
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
Figure 18. Noise Figure vs. RF Frequency at Various Temperatures,
LO = 13 dBm, Measurement Taken with an External LO Amplifier
Rev. 0 | Page 8 of 27
Data Sheet
HMC553ACHIPS
Input P1dB and Input IP2, Lower Sideband (High-Side LO)
20
20
15
10
5
T
T
T
= –40°C
= +25°C
= +85°C
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
A
A
A
15
10
5
0
0
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 21. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 23. Input P1dB vs. RF Frequency at Various LO Power Levels,
TA = 25°C
80
80
LO = 9dBm
LO = 11dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
LO = 13dBm
LO = 15dBm
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 22. Input IP2 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 24. Input IP2 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Rev. 0 | Page 9 of 27
HMC553ACHIPS
Data Sheet
IF = 4000 MHz, Upper Sideband (Low-Side LO)
0
0
–5
T
T
T
= –40°C
= +25°C
= +85°C
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
A
A
A
–5
–10
–15
–20
–10
–15
–20
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 25. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 27. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
30
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
LO = 9dBm
LO = 11dBm
LO = 13dBm
25
20
15
10
5
25
LO = 15dBm
20
15
10
5
0
0
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 26. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 28. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Rev. 0 | Page 10 of 27
Data Sheet
HMC553ACHIPS
Input P1dB and Input IP2, Upper Sideband (Low-Side LO)
20
20
15
10
5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
15
10
5
0
0
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 29. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 31. Input P1dB vs. RF Frequency at Various LO Power Levels,
TA = 25°C
80
80
LO = 9dBm
LO = 11dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
70
60
50
40
30
20
10
0
LO = 13dBm
LO = 15dBm
70
60
50
40
30
20
10
0
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 30. Input IP2 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 32. Input IP2 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Rev. 0 | Page 11 of 27
HMC553ACHIPS
Data Sheet
IF = 4000 MHz, Lower Sideband (High-Side LO)
0
–5
0
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
–5
–10
–15
–20
–10
–15
–20
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 35. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Figure 33. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
30
25
20
15
10
30
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
25
20
15
10
5
LO = 9dBm
5
LO = 11dBm
LO = 13dBm
LO = 15dBm
0
0
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 36. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Figure 34. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Rev. 0 | Page 12 of 27
Data Sheet
HMC553ACHIPS
Input P1dB and Input IP2, Lower Sideband (High-Side LO)
20
15
10
5
20
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
15
10
5
0
0
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 39. Input P1dB vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Figure 37. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 13 dBm
80
70
60
50
40
30
80
70
60
50
40
30
20
20
LO = 9dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
LO = 11dBm
10
10
0
LO = 13dBm
LO = 15dBm
0
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 40. Input IP2 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Figure 38. Input IP2 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Rev. 0 | Page 13 of 27
HMC553ACHIPS
Data Sheet
UPCONVERTER PERFORMANCE
Input IF (IFIN) = 100 MHz, Upper Sideband (Low-Side LO)
0
0
–5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
–5
–10
–15
–20
–10
–15
–20
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 41. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 44. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
30
LO = 9dBm
LO = 11dBm
LO = 13dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
25
20
15
10
5
LO = 15dBm
25
20
15
10
5
0
0
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 42. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 45. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
20
20
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
15
10
5
15
10
5
0
0
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 43. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 46. Input P1dB vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Rev. 0 | Page 14 of 27
Data Sheet
HMC553ACHIPS
IFIN = 100 MHz, Lower Sideband (High-Side LO)
0
0
–5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
–5
–10
–15
–20
–10
–15
–20
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 47. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 50. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
30
LO = 9dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
LO = 11dBm
LO = 13dBm
LO = 15dBm
25
20
15
10
5
25
20
15
10
5
0
0
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 48. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 51. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
20
20
T
T
T
= –40°C
= +25°C
= +85°C
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
A
A
A
15
10
5
15
10
5
0
0
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 49. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 52. Input P1dB vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Rev. 0 | Page 15 of 27
HMC553ACHIPS
Data Sheet
IFIN = 4000 MHz, Upper Sideband (Low-Side LO)
0
0
–5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
–5
–10
–15
–20
–10
–15
–20
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 53. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 56. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
30
LO = 9dBm
LO = 11dBm
LO = 13dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
25
20
15
10
5
25
20
15
10
5
LO = 15dBm
0
0
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 54. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 57. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
20
20
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
15
10
5
15
10
5
0
0
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 55. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 58. Input P1dB vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Rev. 0 | Page 16 of 27
Data Sheet
HMC553ACHIPS
IFIN = 4000 MHz, Lower Sideband (High-Side LO)
0
0
–5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
–5
–10
–15
–20
–10
–15
–20
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 59. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 62. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
30
LO = 9dBm
LO = 11dBm
LO = 13dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
25
20
15
10
5
LO = 15dBm
25
20
15
10
5
0
0
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 60. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 63. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
20
20
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
15
10
5
15
10
5
0
0
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 61. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 64. Input P1dB vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Rev. 0 | Page 17 of 27
HMC553ACHIPS
Data Sheet
ISOLATION AND RETURN LOSS
Downconverter Performance at IF = 100 MHz, Upper Sideband (Low-Side LO)
60
50
40
30
20
10
0
60
50
40
30
20
10
0
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 68. LO to RF Isolation vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Figure 65. LO to RF Isolation vs. RF Frequency at Various Temperatures,
LO = 13 dBm
60
60
LO = 9dBm
LO = 11dBm
LO = 13dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
LO = 15dBm
50
40
30
20
10
0
50
40
30
20
10
0
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 69. LO to IF Isolation vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Figure 66. LO to IF Isolation vs. RF Frequency at Various Temperatures,
LO = 13 dBm
60
60
LO = 9dBm
LO = 11dBm
LO = 13dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
50
40
30
20
10
0
50
40
30
20
10
0
LO = 15dBm
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 70. RF to IF Isolation vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Figure 67. RF to IF Isolation vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Rev. 0 | Page 18 of 27
Data Sheet
HMC553ACHIPS
0
–5
0
–5
–10
–15
–20
–25
–30
–35
–40
–10
–15
–20
–25
–30
–35
–40
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
0
1
2
3
4
5
6
7
8
5
6
7
8
9
10
11
12
13
14
15
IF FREQUENCY (GHz)
LO FREQUENCY (GHz)
Figure 71. LO Return Loss vs. LO Frequency at Various Temperatures,
LO = 11 dBm, TA = 25°C
Figure 73. IF Return Loss vs. IF Frequency at LO Power Levels,
TA = 25°C, LO = 10 GHz
0
–5
–10
–15
–20
–25
–30
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
–35
–40
5
6
7
8
9
10
11
12
13
14
15
RF FREQUENCY (GHz)
Figure 72. RF Return Loss vs. RF Frequency at LO Power Levels,
TA = 25°C, LO = 10 GHz
Rev. 0 | Page 19 of 27
HMC553ACHIPS
Data Sheet
IF BANDWIDTH
Downconverter, Upper Sideband, LO Frequency = 8 GHz
0
0
–5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
–5
–10
–15
–20
–10
–15
–20
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
IF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 74. Conversion Gain vs. IF Frequency at Various Temperatures,
LO = 13 dBm
Figure 76. Conversion Gain vs. IF Frequency at Various LO Power Levels,
TA = 25°C
30
30
LO = 9dBm
LO = 11dBm
LO = 13dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
25
20
15
10
5
25
20
15
10
5
LO = 15dBm
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
IF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 77. Input IP3 vs. IF Frequency at Various LO Power Levels,
TA = 25°C
Figure 75. Input IP3 vs. IF Frequency at Various Temperatures,
LO = 13 dBm
Rev. 0 | Page 20 of 27
Data Sheet
HMC553ACHIPS
Downconverter, Lower Sideband, LO Frequency = 13 GHz
0
0
–5
T
T
T
= –40°C
= +25°C
= +85°C
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
A
A
A
–5
–10
–15
–20
–10
–15
–20
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
IF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 78. Conversion Gain vs. IF Frequency at Various Temperatures,
LO = 13 dBm
Figure 80. Conversion Gain vs. IF Frequency at Various LO Power Levels,
TA = 25°C
30
30
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
LO = 9dBm
LO = 11dBm
LO = 13dBm
25
20
15
10
5
25
20
15
10
5
LO = 15dBm
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
IF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 79. Input IP3 vs. IF Frequency at Various Temperatures,
LO = 13 dBm
Figure 81. Input IP3 vs. IF Frequency at Various LO Power Levels,
TA = 25°C
Rev. 0 | Page 21 of 27
HMC553ACHIPS
Data Sheet
Downconversion, Lower Sideband
SPURIOUS AND HARMONICS PERFORMANCE
Spur values are (M × RF) − (N × LO). RF = 14 GHz, LO =
14.1 GHz, RF power = −10 dBm, and LO power = +13 dBm.
Mixer spurious products are measured in dBc from the IF
output power level. N/A means not applicable.
LO Harmonics
LO = 13 dBm, and all values in dBc are below the input LO level
and measured at the RF port. N/A means not applicable.
Table 4. LO Harmonics at RF
N × LO
NLO Spur at RF Port (dBc)
0
1
2
3
4
LO Frequency (GHz)
6
8
9
10
12
14
1
2
3
4
0
5
22
34
62
80
71
N/A
61
78
73
79
N/A
N/A
70
0
1
2
3
4
35
38
37
37
38
39
31
31
36
41
47
59
64
56
61
63
39
41
57
50
46
46
50
N/A
13
67
N/A
N/A
0
78
71
N/A
M × RF
79
>90
Upconversion, Upper Sideband
Spur values are (M × IFIN) + (N × LO). IFIN = 0.1 GHz, LO =
10 GHz, IFIN power = −10 dBm, and LO power = +13 dBm.
Mixer spurious products are measured in dBc from the RF
output power level.
LO = 13 dBm, and all values in dBc are below the input LO level
and measured at the IF port. N/A means not applicable.
Table 5. LO Harmonics at IF
N × LO
NLO Spur at IF Port (dBc)
0
1
2
3
4
LO Frequency (GHz)
1
2
3
4
>90
>90
>90
76
83
83
65
46
0
80
79
78
58
36
11
37
58
78
77
78
73
74
73
67
25
34
26
71
73
75
74
66
67
64
55
36
15
36
55
68
67
67
−5
−4
−3
−2
−1
0
6
8
9
10
12
14
30
32
33
33
34
36
49
45
49
50
57
54
50
47
46
42
33
33
68
71
62
63
61
N/A
35
0
6
M × IFIN
36
0
+1
+2
+3
+4
+5
M × N Spurious Outputs
76
48
64
83
82
Downconversion, Upper Sideband
>90
>90
>90
Spur values are (M × RF) − (N × LO). RF = 10.1 GHz, LO =
10 GHz, RF power = −10 dBm, and LO power = +13 dBm.
Mixer spurious products are measured in dBc from the IF
output power level. N/A means not applicable.
Upconversion, Lower Sideband
Spur values are (M × IFIN) + (N × LO). IFIN = 0.1 GHz, LO =
14.1 GHz, IFIN power = −10 dBm, and LO power = +13 dBm.
Mixer spurious products are measured in dBc from the RF
output power level. N/A means not applicable.
N × LO
0
0
1
3
2
3
4
N/A
56
21
40
57
80
76
12
51
74
70
81
0
1
2
3
4
19
63
73
N/A
0
N × LO
68
78
73
77
M × RF
0
1
2
3
4
82
>90
>90
88
81
79
62
46
0
73
71
73
74
34
28
34
72
73
73
74
65
65
63
58
21
10
20
57
64
64
63
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
−5
−4
−3
−2
−1
0
>90
70
33
0
7
M × IFIN
33
0
+1
+2
+3
+4
+5
73
49
63
80
79
87
>90
>90
Rev. 0 | Page 22 of 27
Data Sheet
HMC553ACHIPS
THEORY OF OPERATION
The HMC553ACHIPS is a general-purpose, double balanced
mixer that can be used as an upconverter or a downconverter
from 6 GHz to 14 GHz.
When used as an upconverter, the mixer up converts IF
between dc and 5 GHz to RF between 6 GHz and 14 GHz.
When used a downconverter, the HMC553ACHIPS down
converts RF between 6 GHz and 14 GHz to intermediate
frequencies between dc and 5 GHz.
Rev. 0 | Page 23 of 27
HMC553ACHIPS
Data Sheet
APPLICATIONS INFORMATION
external series capacitor is recommended of a value chosen to
pass the necessary IF frequency range. When IF operation to dc
is required, do not exceed the IF source and sink current rating
specified in the Absolute Maximum Ratings section.
TYPICAL APPLICATION CIRCUIT
Figure 82 shows the typical application circuit for the
HMC553ACHIPS. The HMC553ACHIPS is a passive device
and does not require any external components. The LO and
RF pads are internally ac-coupled. The IF pad is internally dc-
coupled. When IF operation to dc is not required, use of an
HMC553ACHIPS
LO
SOURCE
RF
LO
RF
GND
GND
GND
IF
GND
DIE
BOTTOM
IF
Figure 82. Typical Application Circuit
Rev. 0 | Page 24 of 27
Data Sheet
HMC553ACHIPS
Cleanliness
MOUNTING AND BONDING TECHNIQUES
Handle the chips in a clean environment. Do not attempt to
clean the chips using liquid cleaning systems.
Attach the die directly to the ground plane eutectically or with
conductive epoxy. To bring RF to and from the chip, 50 Ω
microstrip transmission lines on 0.127 mm (0.005”) thick,
alumina thin film substrates are recommended (see Figure 83).
If using 0.254 mm (0.010”) thick, alumina thin film substrates,
raise the die 0.150 mm (0.006”) so that the surface of the die is
coplanar with the surface of the substrate. A way to accomplish
this is to attach the 0.102 mm (0.004”) thick die to a 0.150 mm
(0.006”) thick molybdenum heat spreader (moly tab) that is
then attached to the ground plane (see Figure 84). Place microstrip
substrates as close to the die as possible to minimize bond wire
length. Typical die to substrate spacing is 0.076 mm (0.003”).
Static Sensitivity
Follow ESD precautions to protect against ESD strikes.
Transients
Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize
inductive pickup.
General Handling
Handle the chip along the edges with a vacuum collet or with a
sharp pair of bent tweezers. The surface of the chip has fragile
air bridges and must not be touched with a vacuum collet,
tweezers, or fingers.
0.102mm (0.004") THICK GaAs MMIC
MOUNTING
WIRE BOND
0.076mm
(0.003")
The chip is back metallized and can be die mounted either with
gold (Au)/tin (Sn) eutectic preforms or with electrically conductive
epoxy. The mounting surface must be clean and flat.
RF GROUND PLANE
Eutectic Die Attach
0.127mm (0.005") THICK ALUMINA
THIN FILM SUBSTRATE
An 80/20 gold and tin preform is recommended with a work
surface temperature of 255°C and a tool temperature of 265°C.
When hot 90/10 nitrogen (N)/hydrogen (H) gas is applied, the
tool tip temperature must be 290°C. Do not expose the chip to a
temperature greater than 320°C for more than 20 seconds. No
more than 3 seconds of scrubbing is required for attachment.
Figure 83. Bonding RF Pads to 0.127 mm Substrate
0.102mm (0.004") THICK GaAs MMIC
WIRE BOND
0.076mm
(0.003")
Epoxy Die Attach
Apply a minimum amount of epoxy to the mounting surface so
that a thin epoxy fillet is observed around the perimeter of the
chip when the chip is placed into position. Cure epoxy per the
schedule of the manufacturer.
RF GROUND PLANE
0.150mm
0.254mm (0.010") THICK ALUMINA
(0.006") THICK
WIRE BONDING
THIN FILM SUBSTRATE
MOLY TAB
Ball or wedge bond with 0.025 mm (0.00098”) diameter, pure
gold wire is recommended. Thermosonic wire bonding with a
nominal stage temperature of 150°C, and either a ball bonding
force of 40 grams to 50 grams or a wedge bonding force of
18 grams to 22 grams, is recommended. Use the minimum level
of ultrasonic energy to achieve reliable wire bonds. Wire bonds
must start on the chip and terminate on the package or substrate.
All bonds must be as short as possible at <0.31 mm (0.01220”).
Figure 84. Bonding RF Pads to 0.254 mm Substrate
HANDLING PRECAUTIONS
Follow the precautions in the Storage section, the Cleanliness
section, the Static Sensitivity section, the Transients section, and
the General Handling section to avoid permanent damage to
the HMC553ACHIPS.
Storage
All bare dice are placed in either waffle-based or gel-based, ESD
protective containers and then sealed in an ESD protective bag
for shipment. Once the sealed ESD protective bag is open, store
all dies in a dry nitrogen environment.
Rev. 0 | Page 25 of 27
HMC553ACHIPS
Data Sheet
ASSEMBLY DIAGRAM
The assembly diagram of the HMC553ACHIPS is shown in Figure 85.
50Ω
TRANSMISSION
LINE
0.003mm
NOMINAL
GAP
0.025mm
GOLD WIRE
Figure 85. Evaluation Printed Circuit Board Top Layer
Rev. 0 | Page 26 of 27
Data Sheet
HMC553ACHIPS
OUTLINE DIMENSIONS
0.950
0.102
0.092
0.163
0.089 × 0.150
(Pads 2 and 3)
0.127
2
3
0.265
0.750
0.100 × 0.100
(Pads 1, 6 and 7)
1
4
0.100 × 0.086
0.200
0.105
0.076 × 0.097
7
6
5
0.098
TOP VIEW
(CIRCUIT SIDE)
SIDE VIEW
*
AIR BRIDGE
AREA
0.103
0.159
0.153
0.165
0.263
0.005
0.007
*
This die utilizes fragile air bridges. Any pickup tools used must not contact this area.
Figure 86. 7-Pad Bare Die [CHIP]
(C-7-12)
Dimensions shown in millimeters
ORDERING GUIDE
Model1
Temperature Range
Package Description
7-Pad Bare Die [CHIP]
7-Pad Bare Die [CHIP]
Package Option
C-7-12
C-7-12
HMC553AG
HMC553AG-SX
−40°C to +85°C
−40°C to +85°C
1 The HMC553AG and HMC553AG-SX are RoHS compliant parts.
©2019 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D22727-0-12/19(0)
Rev. 0 | Page 27 of 27
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