HMC554A [ADI]
10 GHz to 20 GHz, GaAs, MMIC, Double-Balanced Mixer;
| 型号： | HMC554A |
| 厂家： | 
ADI |
| 描述： | 10 GHz to 20 GHz, GaAs, MMIC, Double-Balanced Mixer |
| 文件： | 总28页 (文件大小：378K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10 GHz to 20 GHz, GaAs, MMIC,
Double-Balanced Mixer
HMC554ACHIPS
Data Sheet
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Conversion loss of up to 8.5 dB (typical)
LO to RF Isolation: 38 dB (typical)
Input IP3 of up to 20 dBm (typical)
RoHS compliant, 7-pad, bare die CHIP
HMC554ACHIPS
LO
RF
APPLICATIONS
Microwave and very small aperture terminal (VSAT) radios
Test equipment
GND
GND
Military electronic warfare (EW), electronic countermeasure
(ECM), and command, control, communications and
intelligence (C3I)
GND
IF
GND
Figure 1.
GENERAL DESCRIPTION
The HMC554ACHIPS is a general-purpose, double-balanced
mixer that can be used as an upconverter or a downconverter
between 10 GHz and 20 GHz. This mixer is fabricated in a
gallium arsenide (GaAs), metal semiconductor field effect
transistor (MESFET) process and requires no external
components or matching circuitry. The HMC554ACHIPS
optimized balun structures provide high local oscillator (LO) to
RF isolation and LO to intermediate frequency (IF) isolation,
38 dB and 52 dB, respectively.
Rev. 0
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registeredtrademarks arethe property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Technical Support
©2019 Analog Devices, Inc. All rights reserved.
www.analog.com
HMC554ACHIPS
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Isolation and Return Loss ......................................................... 19
IF Bandwidth—Downconverter............................................... 21
Spurious and Harmonics Performance ................................... 23
Theory of Operation ...................................................................... 24
Applications Information.............................................................. 25
Typical Application Circuit....................................................... 25
Mounting and Bonding Techniques ........................................ 26
Handling Precautions ................................................................ 26
Mounting..................................................................................... 26
Wire Bonding.............................................................................. 26
Assembly Diagram..................................................................... 27
Outline Dimensions....................................................................... 28
Ordering Guide .......................................................................... 28
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 4
ESD Caution.................................................................................. 4
Pin Configuration and Function Descriptions............................. 5
Interface Schematics..................................................................... 5
Typical Performance Characteristics ............................................. 6
Downconverter Performance, IF = 100 MHz........................... 6
Downconverter Performance, IF = 3000 MHz .......................... 10
Upconverter Performance, IF = 100 MHz .............................. 13
Upconverter Performance, IF = 3000 MHz............................ 16
REVISION HISTORY
10/2019—Revision 0: Initial Version
Rev. 0 | Page 2 of 28
Data Sheet
HMC554ACHIPS
SPECIFICATIONS
TA = 25°C, IF = 100 MHz, and LO = 13 dBm for upper sideband. All measurements were performed as a downconverter, unless otherwise
noted, on the evaluation printed circuit board (PCB).
Table 1.
Parameter
Test Conditions/Comments
Min
Typ
Max
Unit
FREQUENCY
RF Pad
IF Pad
LO Pad
10
DC
10
9
20
6
20
15
GHz
GHz
GHz
dBm
LO AMPLITUDE
10 GHz to 20 GHz PERFORMANCE
Downconverter
Conversion Loss
Single Sideband Noise Figure
Input Third-Order Intercept (IP3)
Input 1 dB Compression Point (P1dB)
Input Second-Order Intercept (IP2)
Upconverter
13
8.5
8.5
20
12
57
10
dB
dB
dBm
dBm
dBm
Measurement taken with external LO amplifier
1 MHz separation between inputs
17
1 MHz separation between inputs
1 MHz separation between inputs
Conversion Loss
Input IP3
Input P1dB
7.5
19
8.5
dB
dBm
dBm
Isolation
RF to IF
LO to RF
LO to IF
28
30
32
40
38
52
dB
dB
dB
12 GHz to 16 GHz PERFORMANCE
Downconverter
Conversion Loss
Single Sideband Noise Figure
Input IP3
Input P1dB
Input IP2
Upconverter
Conversion Loss
Input IP3
8
8
20
11
57
9
dB
dB
dBm
dBm
dBm
Measurement taken with external LO amplifier
1 MHz separation between inputs
18
1 MHz separation between inputs
1 MHz separation between inputs
7
18.5
9
dB
dBm
dBm
Input P1dB
Isolation
RF to IF
LO to RF
LO to IF
38
33
45
43
38
62
dB
dB
dB
Rev. 0 | Page 3 of 28
HMC554ACHIPS
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 2.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Parameter
Rating
RF Input Power
LO Input Power
IF Input Power
IF Source/Sink Current
Reflow Temperature
Junction Temperature
25 dBm
26 dBm
25 dBm
3 mA
260 °C
175°C
ESD CAUTION
Continuous Power Dissipation (PDISS
)
333 mW
(TA = 85°C, Derate 3.7 mW/°C Above 85°C)
Operating Temperature Range
−40°C to +85°C
Storage Temperature Range
−65°C to
+150°C
Electrostatic Discharge (ESD) Sensitivity
Human Body Model (HBM)
Field Induced Charged Device Model (FICDM)
250 V, Class 1A
1250 V, Class IV
Rev. 0 | Page 4 of 28
Data Sheet
HMC554ACHIPS
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
LO
2
3
4
RF
HMC554ACHIPS
TOP VIEW
(Not to Scale)
GND
1
GND
7
6
5
GND
IF
GND
Figure 2. Pad Configuration
Table 3. Pad Function Descriptions
Pad No.
Mnemonic Description
1, 4, 5, 7
GND
LO
RF
Ground. These pads must be connected to RF and dc ground.
LO Port. This pad is ac-coupled and matched to 50 Ω.
RF Port. This pad is ac-coupled and matched to 50 Ω.
IF Port. This pad is dc-coupled. For applications not requiring operation to dc, dc block this port
externally using a series capacitor of a value chosen to pass the necessary IF frequency range. For
operation to dc, this pad must not source or sink more than 3 mA of current because die malfunction
and possible die failure may result.
2
3
6
IF
Die Bottom
GND
Ground. The die bottom must be attached directly to the ground plane eutectically or with conductive epoxy.
INTERFACE SCHEMATICS
GND
IF
Figure 5. IF Interface Schematic
Figure 3. GND Interface Schematic
RF
LO
Figure 4. LO Interface Schematic
Figure 6. RF Interface Schematic
Rev. 0 | Page 5 of 28
HMC554ACHIPS
Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
DOWNCONVERTER PERFORMANCE, IF = 100 MHz
Upper Sideband (Low-Side LO)
0
0
–5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
–5
–10
–15
–20
–10
–15
–20
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 7. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 10. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
30
LO = 9dBm
LO = 11dBm
LO = 13dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
25
25
20
15
10
5
LO = 15dBm
20
15
10
5
0
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 8. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 11. Input IP3 vs. RF Frequency at Various LO Power Levels,
T
A = 25°C
20
15
10
5
20
15
10
5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
0
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 9. Noise Figure vs. RF Frequency at Various Temperatures,
LO = 13 dBm, Measurement Taken with External LO Amplifier
Figure 12. Noise Figure vs. RF Frequency at Various LO Power Levels,
TA = 25°C, Measurement Taken with External LO Amplifier
Rev. 0 | Page 6 of 28
Data Sheet
HMC554ACHIPS
20
20
15
10
5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
15
10
5
0
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 13. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 15. Input P1dB vs. RF Frequency at Various LO Power Levels,
TA = 25°C
80
80
LO = 9dBm
LO = 11dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
70
70
60
50
40
30
20
10
0
LO = 13dBm
LO = 15dBm
60
50
40
30
20
10
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 16. Input IP2 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Figure 14. Input IP2 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Rev. 0 | Page 7 of 28
HMC554ACHIPS
Data Sheet
Lower Sideband (High-Side LO)
0
0
–5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
–5
–10
–15
–20
–10
–15
–20
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 17. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 20. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
30
25
20
15
10
5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
25
20
15
10
5
0
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 18. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 21. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
20
20
15
10
5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
15
10
5
0
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 22. Noise Figure vs. RF Frequency at Various LO Power Levels,
TA = 25°C, Measurement Taken with External LO Amplifier
Figure 19. Noise Figure vs. RF Frequency at Various Temperatures,
LO = 13 dBm, Measurement Taken with External LO Amplifier
Rev. 0 | Page 8 of 28
Data Sheet
HMC554ACHIPS
80
80
70
60
50
40
30
20
10
0
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
70
60
50
40
30
20
10
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 23. Input IP2 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 24. Input IP2 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Rev. 0 | Page 9 of 28
HMC554ACHIPS
Data Sheet
DOWNCONVERTER PERFORMANCE, IF = 3000 MHz
Upper Sideband (Low-Side LO)
0
0
–5
T
T
T
= –40°C
= +25°C
= +85°C
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
A
A
A
–5
–10
–15
–20
–10
–15
–20
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 25. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 28. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
25
20
15
10
5
30
25
20
15
10
LO = 9dBm
5
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
LO = 11dBm
LO = 13dBm
LO = 15dBm
0
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 26. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 29. Input IP3 vs. RF Frequency at Various LO Power Levels,
T
A = 25°C
20
15
10
5
20
15
10
5
T
T
T
= –40°C
= +25°C
= +85°C
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
A
A
A
0
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 27. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 30. Input P1dB vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Rev. 0 | Page 10 of 28
Data Sheet
HMC554ACHIPS
80
80
70
60
50
40
30
20
10
0
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
70
60
50
40
30
20
10
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 31. Input IP2 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 32. Input IP2 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Rev. 0 | Page 11 of 28
HMC554ACHIPS
Data Sheet
Lower Sideband (High-Side LO)
0
–5
0
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
–5
–10
–15
–20
–10
–15
–20
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 33. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 36. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
30
25
20
15
10
5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
25
20
15
10
5
0
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 34. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 37. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
80
80
70
60
50
40
30
20
10
0
LO = 9dBm
LO = 11dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
70
60
50
40
30
20
10
0
LO = 13dBm
LO = 15dBm
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 35. Input IP2 vs. RF Frequency at Various LO Power Levels,
LO = 13 dBm
Figure 38. Input IP2 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Rev. 0 | Page 12 of 28
Data Sheet
HMC554ACHIPS
UPCONVERTER PERFORMANCE, IF = 100 MHz
Upper Sideband (Low-Side LO)
0
0
–5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
–5
–10
–15
–20
–10
–15
–20
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 39. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 42. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
30
T
T
T
= –40°C
= +25°C
= +85°C
LO = 9dBm
LO = 11dBm
LO = 13dBm
A
A
A
25
20
15
10
5
25
20
15
10
5
LO = 15dBm
0
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 40. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 43. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
20
20
T
T
T
= –40°C
= +25°C
= +85°C
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
A
A
A
15
10
5
15
10
5
0
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 41. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 44. Input P1dB vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Rev. 0 | Page 13 of 28
HMC554ACHIPS
Data Sheet
80
70
60
50
40
30
20
80
70
60
50
40
30
20
10
0
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
10
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 45. Input IP2 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 46. Input IP2 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Rev. 0 | Page 14 of 28
Data Sheet
HMC554ACHIPS
Lower Sideband (High-Side LO)
0
0
–5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
–5
–10
–15
–20
–10
–15
–20
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 47. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 50. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
25
20
15
10
5
30
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
25
20
15
10
5
0
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 51. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Figure 48. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
80
70
60
50
40
30
80
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
70
60
50
40
30
20
10
0
20
LO = 9dBm
LO = 11dBm
10
LO = 13dBm
LO = 15dBm
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 52. Input IP2 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Figure 49. Input IP2 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Rev. 0 | Page 15 of 28
HMC554ACHIPS
Data Sheet
UPCONVERTER PERFORMANCE, IF = 3000 MHz
Upper Sideband (Low-Side LO)
0
0
–5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
–5
–10
–15
–20
–10
–15
–20
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 53. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 56. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
30
LO = 9dBm
LO = 11dBm
LO = 13dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
25
20
15
10
5
25
20
15
10
5
LO = 15dBm
0
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 54. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 57. Input IP3 vs. RF Frequency at Various LO Power Levels,
T
A = 25°C
20
20
15
10
5
T
T
T
= –40°C
= +25°C
= +85°C
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
A
A
A
15
10
5
0
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 55. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 58. Input P1dB vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Rev. 0 | Page 16 of 28
Data Sheet
HMC554ACHIPS
80
80
70
60
50
40
30
20
10
0
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
70
60
50
40
30
20
10
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 59. Input IP2 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 60. Input IP2 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Rev. 0 | Page 17 of 28
HMC554ACHIPS
Data Sheet
Lower Sideband (High-Side LO)
0
0
–5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
–5
–10
–15
–20
–10
–15
–20
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 61. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 64. Conversion Gain vs. RF Frequency at Various LO Power Levels,
TA = 25°C
30
30
25
20
15
10
5
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
25
20
15
10
5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
0
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 62. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 65. Input IP3 vs. RF Frequency at Various LO Power Levels,
TA = 25°C
80
80
LO = 9dBm
LO = 11dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
LO = 13dBm
LO = 15dBm
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 63. Input IP2 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Figure 66. Input IP2 vs. RF Frequency at Various LO Power Levels,
A = 25°C
T
Rev. 0 | Page 18 of 28
Data Sheet
HMC554ACHIPS
ISOLATION AND RETURN LOSS
60
50
40
30
20
10
0
60
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
50
40
30
20
10
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 70. LO to RF Isolation vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Figure 67. LO to RF Isolation vs. RF Frequency at Various Temperatures,
LO = 13 dBm
100
100
LO = 9dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
LO = 11dBm
LO = 13dBm
LO = 15dBm
80
80
60
40
20
0
60
40
20
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 71. LO to IF Isolation vs. RF Frequency at Various LO Power Levels,
Figure 68. LO to IF Isolation vs. RF Frequency at Various Temperatures,
LO = 13 dBm
TA = 25°C
60
50
40
30
20
10
0
60
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
50
40
30
20
10
0
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 72. RF to IF Isolation vs. RF Frequency at Various LO Power Levels,
TA = 25°C
Figure 69. RF to IF Isolation vs. RF Frequency at Various Temperatures,
LO = 13 dBm
Rev. 0 | Page 19 of 28
HMC554ACHIPS
Data Sheet
0
0
–5
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
–5
–10
–15
–20
–25
–30
–10
–15
–20
–25
–30
10
11
12
13
14
15
16
17
18
19
20
0
1
2
3
4
5
6
LO FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 73. LO Return Loss vs. LO Frequency at LO = 13 dBm,
TA = 25°C
Figure 75. IF Return Loss vs. IF Frequency at Various LO Power Levels,
TA = 25°C, LO = 15 GHz
0
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
–5
–10
–15
–20
–25
–30
10
11
12
13
14
15
16
17
18
19
20
RF FREQUENCY (GHz)
Figure 74. RF Return Loss vs. RF Frequency at Various LO Power Levels,
TA = 25°C, LO = 15 GHz
Rev. 0 | Page 20 of 28
Data Sheet
HMC554ACHIPS
IF BANDWIDTH—DOWNCONVERTER
Upper Sideband, LO Frequency = 12 GHz
0
0
–5
T
T
T
= –40°C
= +25°C
= +85°C
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
A
A
A
–5
–10
–15
–20
–10
–15
–20
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
IF FREQUENCY (GHz)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
IF FREQUENCY (GHz)
Figure 76. Conversion Gain vs. IF Frequency at Various Temperatures,
LO = 13 dBm
Figure 78. Conversion Gain vs. IF Frequency at Various LO Power Levels,
TA = 25°C
30
30
LO = 9dBm
LO = 11dBm
LO = 13dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
25
20
15
10
5
25
20
15
10
5
LO = 15dBm
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
IF FREQUENCY (GHz)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
IF FREQUENCY (GHz)
Figure 77. Input IP3 vs. IF Frequency at Various Temperatures,
LO = 13 dBm
Figure 79. Input IP3 vs. IF Frequency at Various LO Power Levels,
A = 25°C
T
Rev. 0 | Page 21 of 28
HMC554ACHIPS
Data Sheet
Lower Sideband, LO Frequency = 19 GHz
0
–5
0
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
–5
–10
–15
–20
–10
–15
–20
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
IF FREQUENCY (GHz)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
IF FREQUENCY (GHz)
Figure 80. Conversion Gain vs. IF Frequency at Various Temperatures,
LO = 13 dBm
Figure 82. Conversion Gain vs. IF Frequency at Various LO Power Levels,
A = 25°C
T
30
30
25
20
15
10
5
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
LO = 9dBm
LO = 11dBm
LO = 13dBm
LO = 15dBm
25
20
15
10
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
IF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 81. Input IP3 vs. IF Frequency at Various Temperatures,
LO = 13 dBm
Figure 83. Input IP3 vs. IF Frequency at Various LO Power Levels,
TA = 25°C
Rev. 0 | Page 22 of 28
Data Sheet
HMC554ACHIPS
M × N Spurious Outputs
SPURIOUS AND HARMONICS PERFORMANCE
Downconverter, Upper Sideband
Mixer spurious products are measured in dBc from the IF output
power level. N/A means not applicable.
Spur values are (M × RF) − (N × LO).
LO Harmonics
RF = 15.1 GHz at −10 dBm, and LO = 15 GHz at +13 dBm.
LO = 13 dBm, all values in dBc are below the input LO level and
are measured at the RF port.
N × LO
0
1
2
3
4
5
N/A
33
24
0
36
54
60
83
71
23
57
81
72
81
74
N/A
52
73
83
>90
81
N/A
N/A
62
0
1
2
3
4
5
Table 4. LO Harmonics at RF
N × LO Spur at RF Port
72
81
73
62
LO Frequency (GHz)
1
2
3
4
M × RF
60
71
12
13
15
16
18
19
21
34
35
32
32
30
32
33
36
44
43
50
55
45
41
68
53
48
47
N/A
N/A
N/A
48
N/A
N/A
78
N/A
N/A
N/A
N/A
N/A
N/A
N/A 61
>90
Upconverter, Upper Sideband
Spur values are (M × IF) + (N × LO).
IF = 100 MHz at −10 dBm, and LO = 15 GHz at +13 dBm.
N × LO
LO = 13 dBm, all values in dBc are below the input LO level and
are measured at the IF port.
0
1
2
3
>90
>90
79
89
83
52
67
0
77
77
67
65
30
20
30
66
67
79
76
67
68
53
50
12
24
11
48
50
64
63
−5
−4
−3
−2
−1
0
Table 5. LO Harmonics at IF
N × LO Spur at IF Port
LO Frequency (GHz)
1
2
3
4
87
12
13
15
16
18
19
21
55
58
50
46
31
37
45
64
61
63
67
62
58
56
57
55
51
50
N/A
N/A
N/A
76
33
N/A
N/A
N/A
N/A
N/A
N/A
N/A
33
14
0
M × IF
+1
+2
+3
+4
+5
85
55
52
86
87
78
>90
>90
Rev. 0 | Page 23 of 28
HMC554ACHIPS
Data Sheet
THEORY OF OPERATION
The HMC554ACHIPS is a general-purpose, double balanced
mixer that can be used as an upconverter or a downconverter
from 10 GHz to 20 GHz.
When used as an upconverter, the mixer upconverts IF between dc
and 6 GHz to RF between 10 GHz and 20 GHz.
When used as a downconverter, the HMC554ACHIPS
downconverts RF between 10 GHz and 20 GHz to IF between dc
and 6 GHz.
Rev. 0 | Page 24 of 28
Data Sheet
HMC554ACHIPS
APPLICATIONS INFORMATION
TYPICAL APPLICATION CIRCUIT
HMC554ACHIPS
Figure 84 shows the typical application circuit for the
LO
RF
LO
RF
HMC554ACHIPS. The HMC554ACHIPS is a passive device
that does not require any external components. The IF pad
is internally dc-coupled, and the RF and LO pads are internally
ac-coupled. When IF operation to dc is not required, it is
recommended to use an external series capacitor of a value chosen
to pass the necessary IF frequency range. When IF operation
to dc is required, do not exceed the IF source and sink current
rating specified in the Absolute Maximum Ratings section.
GND
GND
GND
IF
GND
DIE
BOTTOM
IF
Figure 84. Typical Application Circuit
Rev. 0 | Page 25 of 28
HMC554ACHIPS
Data Sheet
MOUNTING AND BONDING TECHNIQUES
Attach the die directly to the ground plane eutectically or with
conductive epoxy. To bring RF to and from the chip, 50 Ω
microstrip transmission lines on 0.127 mm (0.005”) thick,
alumina thin film substrates are recommended (see Figure 85).
If using 0.254 mm (0.010”) thick, alumina thin film substrates,
raise the die 0.150 mm (0.006”) so that the surface of the die is
coplanar with the surface of the substrate. A way to accomplish
this is to attach the 0.102 mm (0.004”) thick die to a 0.150 mm
(0.006”) thick molybdenum heat spreader (moly tab) which is
then attached to the ground plane (see Figure 86). Place microstrip
substrates as close to the die as possible to minimize bond wire
length. Typical die to substrate spacing is 0.076 mm (0.003”).
Cleanliness
Handle the chips in a clean environment. Do not attempt to
clean the chips using liquid cleaning systems.
Static Sensitivity
Follow ESD precautions to protect against ESD strikes.
Transients
Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize
inductive pickup.
General Handling
Handle the chip along the edges with a vacuum collet or with a
sharp pair of bent tweezers. The surface of the chip has fragile
air bridges and must not be touched with a vacuum collet,
tweezers, or fingers.
0.102mm (0.004") THICK GaAs MMIC
WIRE BOND
0.076mm
(0.003")
MOUNTING
The chip is back metallized and can be die mounted either with
gold (Au)/tin (Sn) eutectic preforms or with electrically
conductive epoxy. The mounting surface must be clean and flat.
RF GROUND PLANE
Eutectic Die Attach
0.127mm (0.005") THICK ALUMINA
THIN FILM SUBSTRATE
An 80/20 gold and tin preform is recommended with a work
surface temperature of 255°C and a tool temperature of 265°C.
When hot 90/10 nitrogen (N)/hydrogen (H) gas is applied, the
tool tip temperature must be 290°C. Do not expose the chip to a
temperature greater than 320°C for more than 20 seconds. No
more than 3 seconds of scrubbing is required for attachment.
Figure 85. Bonding RF Pads to 0.127 mm Substrate
0.102mm (0.004") THICK GaAs MMIC
WIRE BOND
0.076mm
(0.003")
Epoxy Die Attach
Apply a minimum amount of epoxy to the mounting surface so
that a thin epoxy fillet is observed around the perimeter of the
chip when the chip is placed into position. Cure epoxy per the
schedule of the manufacturer.
RF GROUND PLANE
0.150mm
(0.006") THICK
MOLY TAB
0.254mm (0.010") THICK ALUMINA
THIN FILM SUBSTRATE
WIRE BONDING
Figure 86. Bonding RF Pads to 0.254 mm Substrate
Ball or wedge bond with 0.025 mm (0.00098”) diameter, pure
gold wire is recommended. Thermosonic wire bonding with a
nominal stage temperature of 150°C, and either a ball bonding
force of 40 grams to 50 grams or a wedge bonding force of
18 grams to 22 grams is recommended. Use the minimum level
of ultrasonic energy to achieve reliable wire bonds. Wire bonds
must start on the chip and terminate on the package or
substrate. All bonds must be as short as possible at <0.31 mm
(0.01220”).
HANDLING PRECAUTIONS
Follow the precautions in the Storage section, the Cleanliness
section, the Static Sensitivity section, the Transients section, and
the General Handling section to avoid permanent damage to
the HMC554ACHIPS.
Storage
All bare dice are placed in either waffle-based or gel-based, ESD
protective containers and then sealed in an ESD protective bag
for shipment. Once the sealed ESD protective bag is open, store
all dies in a dry nitrogen environment.
Rev. 0 | Page 26 of 28
Data Sheet
HMC554ACHIPS
ASSEMBLY DIAGRAM
The assembly diagram of the HMC554ACHIPS is shown in Figure 87.
50Ω
TRANSMISSION
LINE
0.003mm
NOMINAL
GAP
0.025mm
GOLD WIRE
Figure 87. Evaluation PCB Top Layer
Rev. 0 | Page 27 of 28
HMC554ACHIPS
Data Sheet
OUTLINE DIMENSIONS
1.004
0.148
0.161
0.088 × 0.220
(Pads 2 and 3)
0.102
0.099
2
3
0.580
0.210
0.210
1
0.080 × 0.100
5
4
0.098
0.080
0.185
7
6
TOP VIEW
(CIRCUIT SIDE)
SIDE VIEW
0.088 × 0.100
(Pads 1, 4, 5 and 7)
*
AIR BRIDGE
AREA
0.084
0.194
0.160
0.160
0.322
*
This die utilizes fragile air bridges. Any pickup tools used must not contact this area.
Figure 88. 7-Pad Bare Die [CHIP]
(C-7-11)
Dimensions shown in millimeters
ORDERING GUIDE
Model1
Temperature Range
Package Description
Package Option
C-7-11
C-7-11
HMC554A
HMC554A-SX
−40°C to +85°C
−40°C to +85°C
7-Pad Bare Die [CHIP]
7-Pad Bare Die [CHIP]
1 The HMC554A and HMC554A-SX are RoHS compliant parts.
©2019 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D22421-0-10/19(0)
Rev. 0 | Page 28 of 28
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