HMC574AMS8 [ADI]
RF/MICROWAVE DIVERSITY SWITCH;型号: | HMC574AMS8 |
厂家: | ADI |
描述: | RF/MICROWAVE DIVERSITY SWITCH 射频 微波 |
文件: | 总4页 (文件大小:938K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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HMC574AMS8 / 574AMS8E
v00.1115
GaAs MMIC 5 WATT T/R SWITCH
DC - 3 GHz
Typical Applications
Features
The HMC574AMS8 / HMC574AMS8E is ideal for:
• Cellular/3G Infrastructure
• Private Mobile Radio Handsets
• WLAN, WiMAX & WiBro
Low Insertion Loss: 0.3 dB
High Third Order Intercept: +65 dBm
Isolation: 30 dB
Single Positive Supply: +3 to +8V
SMT Package: MSOP8
• Automotive Telematics
• Test Equipment
Included in the HMC-DK005 Designer’s Kit
Functional Diagram
General Description
The HMC574AM8
& HMC574AMS8E are low-
cost SPDT switchs in 8-lead MSOP packages
for use n tsmit/receive applications which
require very istortion at high incident power
levels. Te deice can control signals from DC to
3 Hz and is especially suited for Cellular/3G
ifrastrcture, WiMAX and WiBro applications with
only 0.3 dB typical insertion loss. The design
povides 5 watt power handling performance and
+65 dBm third order intercept at +8 Volt bias.
RF1 and RF2 are refl ective shorts when “Off”.
1
Electrical Specins,
TA = +25° C, Vctl = 5 Vdc, Vdd = +5 Vdc (Unless Otherwise Stated), 50 Ohm System
Parameter
Frequency
Min.
Typ.
Max.
Units
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
0.25
0.3
0.4
0.5
0.6
0.7
0.8
dB
dB
dB
dB
Insertion Loss
Isolation
0.5
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
26
24
21
16
30
28
25
20
dB
dB
dB
dB
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
35
25
18
16
dB
dB
dB
dB
Return Loss
Vctl = 0/+3V
Vctl = 0/+5V
Vctl = 0/+8V
33
35
37
36
38
39
dBm
dBm
dBm
Input Power for 1dB Compression
Input Third Order Intercept
0.5 - 3.0 GHz
Vctl = 0/+3V
Vctl = 0/+5V
Vctl = 0/+8V
55
63
65
dBm
dBm
dBm
0.5 - 3.0 GHz
DC - 3.0 GHz
(Two-tone Input Power = +27 dBm Each Tone)
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
80
120
ns
ns
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
1
HMC574AMS8 / 574AMS8E
v00.1115
GaAs MMIC 5 WATT T/R SWITCH
DC - 3 GHz
Absolute Maximum Ratings
Bias Voltage & Current
Max. Input Power
Vdd = 0/+8V
Vdd (Vdc)
Typical Idd (μA)
0.5 - 2.5 GHz
39 dBm
+3
+5
+8
2
Bias Voltage Range (Vdd)
Control Voltage Range (A & B)
Hot Switching Power Level
-0.2 to +10 Vdc
10
40
-0.2 to +Vdd Vdc
39 dBm
150 °C
0.65W
Vdd = +8V
Control Voltages
Channel Temperature
Continuous Pdiss ( T= + 85 °C)
(derate 10 mW/°C above 85 °C)
State
Bias Condition
0 to +0.2 Vdc @ 10 μA Typical
Vdd 0.2 Vc @ 10 μA Typical
Low
Thermal Resistance
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
100 °C/W
High
-65 to +150 °C
-40 to +85 °C
Class 1A
Truth Table
Control InuVctl)
Signal Path State
DC Blocks are required at ports RFC, RF1 and RF2
2
A
RFC to RF1
RFC to RF2
High
Low
ow
High
Off
On
On
Off
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
2
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