HMC6505A [ADI]
5.5 GHz to 8.6 GHz, GaAs, MMIC, I/Q Upconverter;
| 型号： | HMC6505A |
| 厂家： | 
ADI |
| 描述： | 5.5 GHz to 8.6 GHz, GaAs, MMIC, I/Q Upconverter |
| 文件： | 总30页 (文件大小：755K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
5.5 GHz to 8.6 GHz,
GaAs, MMIC, I/Q Upconverter
Data Sheet
HMC6505A
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Conversion gain: 15 dB typical
Sideband rejection: 22 dBc typical
Output P1dB compression at maximum gain: 22 dBm typical
Output IP3 at maximum gain: 35 dBm typical
LO to RF isolation: 4 dB typical
VDD1
LO to IF isolation: 9 dB typical
VDD2
VDD3
RF return loss: 20 dB typical
LO return loss: 10 dB typical
LOIN
GND
HMC6505A
EPAD
IF return loss: 20 dB typical
Exposed paddle, 5 mm × 5 mm, 32-terminal, leadless chip
carrier package
Figure 1.
APPLICATIONS
Point to point and point to multipoint radios
Military radars, electronic warfare (EW), and electronic
intelligence (ELINT)
Satellite communications
Sensors
GENERAL DESCRIPTION
The HMC6505A is a compact gallium arsenide (GaAs),
pseudomorphic (pHEMT), monolithic microwave integrated
circuit (MMIC) upconverter in a RoHS compliant package that
operates from 5.5 GHz to 8.6 GHz. This device provides a small
signal conversion gain of 15 dB with 22 dBc of sideband
rejection. The HMC6505A uses a variable gain amplifier (VGA)
preceded by an in-phase and quadrature (I/Q) mixer that is
driven by an active local oscillator (LO). The IF1 and IF2 mixer
inputs are provided, and an external 90° hybrid is needed to
select the required sideband. The I/Q mixer topology reduces
the need for filtering of unwanted sideband. The HMC6505A
is a smaller alternative to hybrid style single sideband (SSB)
upconverter assemblies, and it eliminates the need for wire
bonding by allowing the use of surface-mount manufacturing
techniques.
The HMC6505A is available in 5 mm × 5 mm, 32-terminal
leadless chip carrier (LCC) package and operates over a −40°C
to +85°C temperature range. An evaluation board for the
HMC6505A is also available upon request.
Rev. 0
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rightsof third parties that may result fromits use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks andregisteredtrademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Technical Support
©2017 Analog Devices, Inc. All rights reserved.
www.analog.com
HMC6505A
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
IF = 350 MHz, IF Input Power = −6 dBm, Upper Sideband
(Low-Side LO) ............................................................................ 14
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution.................................................................................. 4
Pin Configuration and Function Descriptions............................. 5
Interface Schematics..................................................................... 6
Typical Performance Characteristics ............................................. 7
IF = 1000 MHz, IF Input Power = −6 dBm, Upper Sideband
(Low-Side LO) ............................................................................ 16
IF= 2500 MHz, IF Input Power = −6 dBm, Upper Sideband
(Low-Side LO) ............................................................................ 18
Isolation and Return Loss ......................................................... 20
IF Bandwidth Performance: Lower Sideband (High-Side LO) . 23
Spurious Performance ............................................................... 24
Theory of Operation ...................................................................... 26
Applications Information .............................................................. 27
Typical Application Circuit....................................................... 27
Evaluation Board Information.................................................. 28
Outline Dimensions....................................................................... 30
Ordering Guide .......................................................................... 30
IF = 350 MHz, IF Input Power = −6 dBm, Lower Sideband
(High-Side LO) ............................................................................. 7
IF = 1000 MHz, IF Input Power = −6 dBm, Lower Sideband
(High-Side LO) ............................................................................. 9
IF= 2500 MHz, IF Input Power = −6 dBm, Lower Sideband
(High-Side LO) ........................................................................... 11
REVISION HISTORY
8/2017—Revision 0: Initial Version
Rev. 0 | Page 2 of 30
Data Sheet
HMC6505A
SPECIFICATIONS
TA = 25°C, IF = 350 MHz, VDDx = 5 V, VCTRL = −4 V, LO power = 4 dBm. Measurements performed with lower sideband selected and
external 90° hybrid at the IF ports, unless otherwise noted.
Table 1.
Parameter
Symbol
Min
Typ
Max
Unit
OPERATING CONDITIONS
Frequency Range
Radio Frequency
Local Oscillator
Intermediate Frequency
Control Voltage Range
RF
LO
IF
VCTRL
5.5
2.5
DC
−4
−2
8.6
11.6
3
0
+6
GHz
GHz
GHz
V
LO Drive Range
+4
dBm
PERFORMANCE
Conversion Gain
Dynamic Range
Sideband Rejection
Output Power for 1 dB Compression at Maximum Gain
Output Third-Order Intercept at Maximum Gain
Isolation
LO to RF
12
20
18
15
25
22
22
35
dB
dB
dBc
dBm
dBm
OP1dB
OIP3
31
−1
+4
9
15
dB
dB
dB
LO to IF
Noise Figure
Return Loss
RF
LO
IF
NF
20
10
20
dB
dB
dB
POWER SUPPLY
Total Supply Current
LO Amplifier
RF Amplifier
IDD1
IDD2, IDD3
125
120
mA
mA
Rev. 0 | Page 3 of 30
HMC6505A
Data Sheet
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
Table 2.
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
Parameter
Rating
Drain Bias Voltage (VDD1, VDD2, and VDD3)
Gate Bias Voltage
5.5 V
VGG
VCTRL
Input Power
LO
−3 V to 0 V
−5 V to +0.3 V
Table 3. Thermal Resistance
Package Type
E-32-11
θJA
θJC
Unit
66.7
54.6
°C/W
10 dBm
1 Thermal impedance simulated values are based on JEDEC 2S2P test board
with 5 × 5 thermal vias. Refer to JDEC standard JESD51-2 for additional
information.
IF
20 dBm
MSL3
175°C
−65°C to +150°C
−40°C to +85°C
260°C
Moisture Sensitivity Level (MSL) Rating1
Maximum Junction Temperature
Storage Temperature Range
Operating Temperature Range
Reflow Temperature
Electrostatic Discharge Sensitivity
Human Body Model (HBM)
ESD CAUTION
500 V
750 V
Field Induced Charged Device Model
(FICDM)
1 See the Ordering Guide.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Rev. 0 | Page 4 of 30
Data Sheet
HMC6505A
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
NIC
NIC
NIC
1
2
3
4
5
6
7
NIC
VDD2
22 NIC
NIC
NIC
NIC
18 VDD3
NIC
24
23
HMC6505A
21
20
19
NIC
VDD1
NIC
LOIN
GND 8
TOP VIEW
(Not to Scale)
17
NOTES
1. NOT INTERNALLY CONNECTED. THESE PINS
ARE NOT CONNECTED INTERNALLY. HOWEVER,
PINS MAY BE CONNECTED TO RF/DC GROUND
WITHOUT AFFECTING PERFORMANCE.
2. EXPOSED PAD. CONNECT TO A LOW IMPEDANCE
THERMAL AND ELECTRICAL GROUND PLANE.
Figure 2. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic
Description
1 to 4, 6, 9 to 11, 16, NIC
17, 19 to 22, 24,
25, 32
Not Internally Connected. These pins are not connected internally. However, pins may be connected
to RF/dc ground without affecting performance.
5
VDD1
Power Supply Voltage for LO Amplifier. See Figure 3 for the interface schematic. Refer to the typical
application circuit (see Figure 103) for the required external components.
7
LOIN
Local Oscillator Input. See Figure 4 for the interface schematic. This pin is ac-coupled and matched
to 50 Ω.
8, 13, 15, 27, 29, 31 GND
Ground Connect. See Figure 5 for the interface schematic. These pins and package bottom must be
connected to RF/dc ground.
12
VGG
Gate Voltage for the Variable Gain Amplifier. See Figure 6 for the interface schematic. Refer to the
typical application circuit (see Figure 103) for the required external components.
14
RFOUT
Radio Frequency Output. See Figure 7 for the interface schematic. This pin is ac-coupled and
matched to 50 Ω.
18, 23
VDD3, VDD2
Power Supply Voltage for the Variable Gain Amplifier. See Figure 8 for the interface schematic. Refer
to the typical application circuit (see Figure 103) for the required external components.
26
VCTRL
IF1, IF2
Gain Control Voltage for the Variable Gain Amplifier. See Figure 9 for the interface schematic. Refer to
the typical application circuit (see Figure 103) for the required external components.
Quadrature Intermediate Frequency Inputs. See Figure 10 for the interface schematic. For applications
not requiring operation to dc, use an off chip dc blocking capacitor. For operation to dc, these pins
must not source or sink more than 3 mA of current or device malfunction and failure can result.
28, 30
EPAD
Exposed Pad. Connect to a low impedance thermal and electrical ground plane.
Rev. 0 | Page 5 of 30
HMC6505A
Data Sheet
INTERFACE SCHEMATICS
VDD1
RFOUT
Figure 3. VDD1 Interface
Figure 7. RFOUT Interface
VDD2, VDD3
LOIN
Figure 4. LOIN Interface
Figure 8. VDD2, VDD3 Interface
GND
VCTRL
Figure 5. GND Interface
Figure 9. VCTRL Interface
IF1, IF2
VGG
Figure 6. VGG Interface
Figure 10. IF1, IF2 Interface
Rev. 0 | Page 6 of 30
Data Sheet
HMC6505A
TYPICAL PERFORMANCE CHARACTERISTICS
IF = 350 MHz, IF INPUT POWER = −6 dBm, LOWER SIDEBAND (HIGH-SIDE LO)
20
18
16
14
12
10
8
40
35
30
25
20
15
10
5
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
6
4
2
0
0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 11. Conversion Gain vs. RF Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
Figure 14. Sideband Rejection vs. RF Frequency over Temperatures,
Voltage Control = −4 V
20
40
–2dBm
–2dBm
0dBm
0dBm
18
+2dBm
+2dBm
+4dBm
+6dBm
35
30
25
20
15
10
5
+4dBm
16
14
12
10
8
+6dBm
6
4
2
0
5.5
0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 12. Conversion Gain vs. RF Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
Figure 15. Sideband Rejection vs. RF Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
T
T
20
15
10
5
25
20
15
10
5
RF = 8.5GHz
RF = 7.5GHz
RF = 6.5GHz
RF = 5.5GHz
0
RF = 8.5GHz
RF = 7.5GHz
RF = 6.5GHz
RF = 5.5GHz
–5
–10
0
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5
0
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5
0
VOLTAGE CONTROL (V)
VOLTAGE CONTROL (V)
Figure 13. Conversion Gain vs. Voltage Control over RF,
Figure 16. Sideband Rejection vs. Voltage Control over RF,
T
A = 25°C, LO Power = 4 dBm
TA = 25°C, LO Power = 4 dBm
Rev. 0 | Page 7 of 30
HMC6505A
Data Sheet
50
30
28
26
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
45
24
22
20
18
16
14
12
10
40
35
30
25
20
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 17. Output IP3 vs. RF Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
Figure 20. Output P1dB vs. RF Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
50
30
–2dBm
0dBm
–2dBm
0dBm
+2dBm
+4dBm
+6dBm
28
26
24
22
20
18
16
14
12
10
+2dBm
+4dBm
+6dBm
45
40
35
30
25
20
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 18. Output IP3 vs. RF Frequency over LO Powers
A = 25°C, Voltage Control = −4 V
Figure 21. Output P1dB vs. RF Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
T
T
50
45
40
35
30
25
20
15
10
5
RF = 8.5GHz
RF = 7.5GHz
RF = 6.5GHz
RF = 5.5GHz
0
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5
0
VOLTAGE CONTROL (V)
Figure 19. Output IP3 vs. Voltage Control over RF Frequencies,
A = 25°C, LO Power = 4 dBm
T
Rev. 0 | Page 8 of 30
Data Sheet
HMC6505A
IF = 1000 MHz, IF INPUT POWER = −6 dBm, LOWER SIDEBAND (HIGH-SIDE LO)
20
18
16
14
12
10
8
40
35
30
25
20
15
10
5
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
6
4
2
0
0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 22. Conversion Gain vs. RF Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
Figure 25. Sideband Rejection vs. RF Frequency over Temperatures,
Voltage Control = −4 V
20
40
35
30
25
20
15
–2dBm
0dBm
18
16
14
12
10
8
+2dBm
+4dBm
+6dBm
6
10
–2dBm
0dBm
+2dBm
+4dBm
+6dBm
4
5
2
0
5.5
0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 23. Conversion Gain vs. RF Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
Figure 26. Sideband Rejection vs. RF Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
T
T
20
15
10
5
40
35
30
25
20
15
10
5
0
RF = 8.5GHz
RF = 7.5GHz
RF = 6.5GHz
RF = 5.5GHz
RF = 8.5GHz
RF = 7.5GHz
RF = 6.5GHz
RF = 5.5GHz
–5
–10
0
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5
VOLTAGE CONTROL (V)
0
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5
0
VOLTAGE CONTROL (V)
Figure 24. Conversion Gain vs. Voltage Control over RF,
Figure 27. Sideband Rejection vs. Voltage Control over RF,
T
A = 25°C, LO Power = 4 dBm
TA = 25°C, LO Power = 4 dBm
Rev. 0 | Page 9 of 30
HMC6505A
Data Sheet
50
30
28
26
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
45
24
22
20
18
16
14
12
10
40
35
30
25
20
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 28. Output IP3 vs. RF Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
Figure 31. Output P1dB vs. RF Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
50
30
–2dBm
0dBm
–2dBm
0dBm
+2dBm
+4dBm
+6dBm
28
26
24
22
20
18
16
14
12
10
+2dBm
+4dBm
+6dBm
45
40
35
30
25
20
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 29. Output IP3 vs. RF Frequency over LO Powers
A = 25°C, Voltage Control = −4 V
Figure 32. Output P1dB vs. RF Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
T
T
50
45
40
35
30
25
20
15
10
5
RF = 8.5GHz
RF = 7.5GHz
RF = 6.5GHz
RF = 5.5GHz
0
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5
0
VOLTAGE CONTROL (V)
Figure 30. Output IP3 vs. Voltage Control over RF,
T
A = 25°C, LO Power = 4 dBm
Rev. 0 | Page 10 of 30
Data Sheet
HMC6505A
IF= 2500 MHz, IF INPUT POWER = −6 dBm, LOWER SIDEBAND (HIGH-SIDE LO)
20
18
16
14
12
10
8
40
35
30
25
20
15
10
5
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
6
4
2
0
0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 33. Conversion Gain vs. RF Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
Figure 36. Sideband Rejection vs. RF Frequency over Temperatures,
Voltage Control = −4 V
20
40
–2dBm
–2dBm
0dBm
+2dBm
+4dBm
0dBm
18
+2dBm
+4dBm
+6dBm
35
16
14
30
25
20
15
10
5
+6dBm
12
10
8
6
4
2
0
5.5
0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 34. Conversion Gain vs. RF Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
Figure 37. Sideband Rejection vs. RF Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
T
T
20
15
10
5
50
45
40
35
30
25
20
15
10
5
0
RF = 8.5GHz
RF = 7.5GHz
RF = 6.5GHz
RF = 5.5GHz
RF = 8.5GHz
RF = 7.5GHz
RF = 6.5GHz
RF = 5.5GHz
–5
–10
0
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5
VOLTAGE CONTROL (V)
0
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5
0
VOLTAGE CONTROL (V)
Figure 35. Conversion Gain vs. Voltage Control over RF,
Figure 38. Sideband Rejection vs. Voltage Control over RF,
T
A = 25°C, LO Power = 4 dBm
TA = 25°C, LO Power = 4 dBm
Rev. 0 | Page 11 of 30
HMC6505A
Data Sheet
50
30
28
26
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
45
40
35
30
25
20
24
22
20
18
16
14
12
10
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 39. Output IP3 vs. RF Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
Figure 42. Output P1dB vs. RF Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
50
30
–2dBm
0dBm
–2dBm
0dBm
+2dBm
+4dBm
+6dBm
28
26
24
22
20
18
16
14
12
10
+2dBm
+4dBm
+6dBm
45
40
35
30
25
20
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 40. Output IP3 vs. RF Frequency over LO Powers
A = 25°C, Voltage Control = −4 V
Figure 43. Output P1dB vs. RF Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
T
T
50
45
40
35
30
25
20
15
10
5
RF = 8.5GHz
RF = 7.5GHz
RF = 6.5GHz
RF = 5.5GHz
0
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5
0
VOLTAGE CONTROL (V)
Figure 41. Output IP3 vs. Voltage Control over RF,
T
A = 25°C, LO Power = 4 dBm
Rev. 0 | Page 12 of 30
Data Sheet
HMC6505A
20
20
18
16
14
12
10
8
–40°C
+25°C
18
+85°C
16
14
12
10
8
6
6
–2dBm
0dBm
4
4
+2dBm
+4dBm
+6dBm
2
2
0
5.5
0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 44. Noise Figure vs. RF Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
Figure 45. Noise Figure vs. RF Frequency over LO Powers
A = 25°C, Voltage Control = −4 V
T
Rev. 0 | Page 13 of 30
HMC6505A
Data Sheet
IF = 350 MHz, IF INPUT POWER = −6 dBm, UPPER SIDEBAND (LOW-SIDE LO)
20
18
16
14
12
10
8
40
35
30
25
20
15
10
5
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
6
4
2
0
0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 46. Conversion Gain vs. RF Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
Figure 49. Sideband Rejection vs. RF Frequency over Temperatures,
Voltage Control = −4 V
20
18
16
14
12
10
8
40
–2dBm
0dBm
+2dBm
+4dBm
+6dBm
35
30
25
20
15
10
5
6
–2dBm
0dBm
+2dBm
+4dBm
+6dBm
4
2
0
0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 47. Conversion Gain vs. RF Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
Figure 50. Sideband Rejection vs. RF Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
T
T
20
15
10
5
40
35
30
25
20
15
10
5
RF = 8.5GHz
RF = 7.5GHz
RF = 6.5GHz
RF = 5.5GHz
RF = 8.5GHz
RF = 7.5GHz
RF = 6.5GHz
RF = 5.5GHz
0
–5
–10
0
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5
VOLTAGE CONTROL (V)
0
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5
0
VOLTAGE CONTROL (V)
Figure 48. Conversion Gain vs. Voltage Control over RF,
Figure 51. Sideband Rejection vs. Voltage Control over RF,
T
A = 25°C, LO Power = 4 dBm
TA = 25°C, LO Power = 4 dBm
Rev. 0 | Page 14 of 30
Data Sheet
HMC6505A
50
30
28
26
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
45
24
22
20
18
16
14
12
10
40
35
30
25
20
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 52. Output IP3 vs. RF Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
Figure 55. Output P1dB vs. RF Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
50
30
–2dBm
0dBm
–2dBm
0dBm
28
26
24
22
20
18
16
14
12
10
+2dBm
+4dBm
+6dBm
+2dBm
+4dBm
+6dBm
45
40
35
30
25
20
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 53. Output IP3 vs. RF Frequency over LO Powers
A = 25°C, Voltage Control = −4 V
Figure 56. Output P1dB vs. RF Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
T
T
50
45
40
35
30
25
20
15
10
5
RF = 8.5GHz
RF = 7.5GHz
RF = 6.5GHz
RF = 5.5GHz
0
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5
0
VOLTAGE CONTROL (V)
Figure 54. Output IP3 vs. Voltage Control over RF,
T
A = 25°C, LO Power = 4 dBm
Rev. 0 | Page 15 of 30
HMC6505A
Data Sheet
IF = 1000 MHz, IF INPUT POWER = −6 dBm, UPPER SIDEBAND (LOW-SIDE LO)
50
45
40
35
30
25
20
15
10
5
20
18
16
14
12
10
8
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
6
4
2
0
0
5.5
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 57. Conversion Gain vs. RF Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
Figure 60. Sideband Rejection vs. RF Frequency over Temperatures,
Voltage Control = −4 V
20
50
–2dBm
–2dBm
0dBm
18
45
0dBm
+2dBm
+2dBm
+4dBm
+6dBm
+4dBm
16
14
12
10
8
40
35
30
25
20
15
10
5
+6dBm
6
4
2
0
5.5
0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 58. Conversion Gain vs. RF Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
Figure 61. Sideband Rejection vs. RF Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
T
T
20
15
10
5
60
50
40
30
20
10
0
0
RF = 8.5GHz
RF = 7.5GHz
RF = 6.5GHz
RF = 5.5GHz
RF = 8.5GHz
RF = 7.5GHz
RF = 6.5GHz
RF = 5.5GHz
–5
–10
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5
VOLTAGE CONTROL (V)
0
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5
0
VOLTAGE CONTROL (V)
Figure 59. Conversion Gain vs. Voltage Control over RF,
Figure 62. Sideband Rejection vs. Voltage Control over RF,
T
A = 25°C, LO Power = 4 dBm
T
A = 25°C, LO Power = 4 dBm
Rev. 0 | Page 16 of 30
Data Sheet
HMC6505A
50
30
28
26
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
45
24
22
20
18
16
14
12
10
40
35
30
25
20
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 63. Output IP3 vs. RF Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
Figure 66. Output P1dB vs. RF Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
50
30
–2dBm
0dBm
–2dBm
0dBm
28
26
24
22
20
18
16
14
12
10
+2dBm
+4dBm
+6dBm
+2dBm
+4dBm
+6dBm
45
40
35
30
25
20
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 64. Output IP3 vs. RF Frequency over LO Powers
A = 25°C, Voltage Control = −4 V
Figure 67. Output P1dB vs. RF Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
T
T
50
45
40
35
30
25
20
15
10
5
RF = 8.5GHz
RF = 7.5GHz
RF = 6.5GHz
RF = 5.5GHz
0
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5
0
VOLTAGE CONTROL (V)
Figure 65. Output IP3 vs. Voltage Control over RF,
T
A = 25°C, LO Power = 4 dBm
Rev. 0 | Page 17 of 30
HMC6505A
Data Sheet
IF= 2500 MHz, IF INPUT POWER = −6 dBm, UPPER SIDEBAND (LOW-SIDE LO)
20
18
16
14
12
10
8
70
65
60
55
50
45
40
35
30
25
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
6
4
2
0
20
6.5
7.0
7.5
8.0
8.5
9.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 68. Conversion Gain vs. RF Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
Figure 71. Sideband Rejection vs. RF Frequency over Temperatures,
Voltage Control = −4 V
20
70
–2dBm
–2dBm
18
16
14
12
10
8
0dBm
0dBm
65
60
55
50
45
40
35
30
25
20
+2dBm
+4dBm
+6dBm
+2dBm
+4dBm
+6dBm
6
4
2
0
6.5
7.0
7.5
8.0
8.5
9.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 69. Conversion Gain vs. RF Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
Figure 72. Sideband Rejection vs. RF Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
T
T
20
15
10
5
80
75
70
65
60
55
50
45
40
35
30
25
20
RF = 8.5GHz
RF = 7.5GHz
RF = 6.5GHz
RF = 8.5GHz
RF = 7.5GHz
RF = 6.5GHz
0
–5
–10
–15
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5
0
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5
0
VOLTAGE CONTROL (V)
VOLTAGE CONTROL (V)
Figure 73. Sideband Rejection vs. Voltage Control over RF,
Figure 70. Conversion Gain vs. Voltage Control over RF,
T
A = 25°C, LO Power = 4 dBm
T
A = 25°C, LO Power = 4 dBm
Rev. 0 | Page 18 of 30
Data Sheet
HMC6505A
50
45
40
35
30
25
20
15
30
28
26
24
22
20
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
18
16
14
12
10
10
6.5
7.0
7.5
8.0
8.5
9.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 74. Output IP3 vs. RF Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
Figure 77. Output P1dB vs. RF Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
50
30
–2dBm
0dBm
+2dBm
+4dBm
+6dBm
–2dBm
0dBm
28
26
24
22
20
18
16
14
12
10
45
40
35
30
25
20
15
10
+2dBm
+4dBm
+6dBm
6.5
7.0
7.5
8.0
8.5
9.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 75. Output IP3 vs. RF Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
Figure 78. Output P1dB vs. RF Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
T
T
50
45
40
35
30
25
20
15
10
5
RF = 8.5GHz
RF = 7.5GHz
RF = 6.5GHz
0
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5
0
VOLTAGE CONTROL (V)
Figure 76. Output IP3 vs. Voltage Control over RF,
T
A = 25°C, LO Power = 4 dBm
Rev. 0 | Page 19 of 30
HMC6505A
Data Sheet
ISOLATION AND RETURN LOSS
20
20
18
16
14
12
10
8
–2dBm
0dBm
+2dBm
+4dBm
+6dBm
+85°C
+25°C
–40°C
18
16
14
12
10
8
6
6
4
4
2
2
0
5.0
0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5 10.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5 10.0
LO FREQUENCY (GHz)
LO FREQUENCY (GHz)
Figure 79. LO to IF1 Isolation vs. LO Frequency over Temperatures,
IF = 350 MHz, LO Power = 4 dBm, Voltage Control = −4 V
Figure 82. LO to IF1 Isolation vs. LO Frequency over LO Powers, TA = 25°C,
Voltage Control = −4 V
20
20
–2dBm
+85°C
+25°C
–40°C
0dBm
18
16
14
12
10
8
18
+2dBm
+4dBm
+6dBm
16
14
12
10
8
6
6
4
4
2
2
0
5.0
0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5 10.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5 10.0
LO FREQUENCY (GHz)
LO FREQUENCY (GHz)
Figure 80. LO to IF2 Isolation vs. LO Frequency over Temperatures,
IF = 350 MHz, LO Power = 4 dBm, Voltage Control = −4 V
Figure 83. LO to IF2 Isolation vs. LO Frequency over LO Powers, TA = 25°C,
Voltage Control = −4 V
25
25
–2dBm
0dBm
+2dBm
+4dBm
+85°C
+25°C
–40°C
20
15
10
5
20
+6dBm
15
10
5
0
5.0
0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
LO FREQUENCY (GHz)
LO FREQUENCY (GHz)
Figure 81. LO to RF Isolation vs. LO Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
Figure 84. LO to RF Isolation vs. LO Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
T
Rev. 0 | Page 20 of 30
Data Sheet
HMC6505A
90
80
75
70
65
60
55
50
45
40
35
30
–40°C
+25°C
+85°C
–2dBm
0dBm
+2dBm
+4dBm
+6dBm
80
70
60
50
40
30
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 85. IF1 to RF Isolation vs. RF Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
Figure 88. IF1 to RF Isolation vs. RF Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
T
90
90
80
70
60
50
40
30
20
10
0
–40°C
+25°C
+85°C
80
–2dBm
0dBm
+2dBm
+4dBm
+6dBm
70
60
50
40
30
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 86. IF2 to RF Isolation vs. RF Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
Figure 89. IF2 to RF Isolation vs. RF Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
T
0
0
+85°C
+25°C
–40°C
–2dBm
0dBm
+2dBm
+4dBm
+6dBm
–5
–10
–15
–20
–25
–5
–10
–15
–20
–25
5.0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
LO FREQUENCY (GHz)
LO FREQUENCY (GHz)
Figure 87. LO Return Loss vs. LO Frequency over Temperatures,
LO Power = 4 dBm, Voltage Control = −4 V
Figure 90. LO Return Loss vs. LO Frequency over LO Powers,
A = 25°C, Voltage Control = −4 V
T
Rev. 0 | Page 21 of 30
HMC6505A
Data Sheet
0
0
–5
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
–5
–10
–15
–20
–25
–30
–35
–40
–45
–50
–10
–15
–20
–25
–30
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
RF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 91. RF Return Loss vs. RF Frequency over Temperatures,
LO Frequency = 7 GHz, LO Power = 4 dBm, Voltage Control = −4 V
Figure 94. IF2 Return Loss vs. IF Frequency over Temperatures,
LO Frequency = 7 GHz, LO Power = 4 dBm, Voltage Control = −4 V
0
0
–2dBm
0dBm
+2dBm
+4dBm
+6dBm
–2dBm
0dBm
+2dBm
+4dBm
+6dBm
–5
–10
–15
–20
–25
–30
–35
–40
–45
–50
–5
–10
–15
–20
–25
–30
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
RF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 92. RF Return Loss vs. RF Frequency over LO Powers,
LO Frequency = 7 GHz, TA = 25°C, Voltage Control = −4 V
Figure 95. IF1 Return Loss vs. IF Frequency over LO Powers,
LO Frequency = 7 GHz, TA = 25°C, Voltage Control = −4 V
0
0
–2dBm
0dBm
+2dBm
+4dBm
+6dBm
+85°C
+25°C
–40°C
–5
–10
–15
–20
–25
–30
–35
–40
–45
–50
–5
–10
–15
–20
–25
–30
–35
–40
–45
–50
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 93. IF1 Return Loss vs. IF Frequency over Temperatures,
LO Frequency = 7 GHz, LO Power = 4 dBm, Voltage Control = −4 V
Figure 96. IF2 Return Loss vs. IF Frequency over LO Powers,
LO Frequency = 7 GHz, TA = 25°C, Voltage Control = −4 V
Rev. 0 | Page 22 of 30
Data Sheet
HMC6505A
IF BANDWIDTH PERFORMANCE: LOWER SIDEBAND (HIGH-SIDE LO)
20
18
16
14
12
10
8
20
18
16
14
12
10
8
–2dBm
0dBm
+2dBm
+4dBm
+6dBm
+85°C
+25°C
–40°C
6
6
4
4
2
2
0
0.3
0
0.3
0.8
1.3
1.8
2.3
2.8
3.3
0.8
1.3
1.8
2.3
2.8
3.3
IF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 97. Conversion Gain vs. IF Frequency over Temperatures,
LO Frequency = 7 GHz, LO Power = 4 dBm, Voltage Control = −4 V
Figure 100. Conversion Gain vs. IF Frequency over LO Powers,
LO Frequency = 7 GHz, TA = 25°C, Voltage Control = −4 V
40
35
30
25
20
15
10
40
35
30
25
20
15
–2dBm
0dBm
+2dBm
+4dBm
+6dBm
10
5
+85°C
5
+25°C
–40°C
0
0.3
0
0.3
0.8
1.3
1.8
2.3
2.8
3.3
0.8
1.3
1.8
2.3
2.8
3.3
IF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 98. Sideband Rejection vs. IF Frequency over Temperatures,
LO Frequency = 7 GHz, LO Power = 4 dBm, Voltage Control = −4 V
Figure 101. Sideband Rejection vs. IF Frequency over LO Powers,
LO Frequency = 7 GHz, TA = 25°C, Voltage Control = −4 V
40
35
30
25
20
15
10
40
35
30
25
20
15
–2dBm
0dBm
+2dBm
+4dBm
+6dBm
10
5
+85°C
5
+25°C
–40°C
0
0.3
0
0.3
0.8
1.3
1.8
2.3
2.8
3.3
0.8
1.3
1.8
2.3
2.8
3.3
IF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 99. Output IP3 vs. IF Frequency over Temperatures,
LO Frequency = 7 GHz, LO Power = 4 dBm, Voltage Control = −4 V
Figure 102. Output IP3 vs. IF Frequency over LO Powers,
LO Frequency = 7 GHz, TA = 25°C, Voltage Control = −4 V
Rev. 0 | Page 23 of 30
HMC6505A
Data Sheet
M × N Spurious Output, IF = 1000 MHz
SPURIOUS PERFORMANCE
RF = 5500 MHz, LO frequency = 6500 MHz at LO input power =
4 dBm, IF input power = −6 dBm.
Mixer spurious products are measured in dBc from the RF
output power level. Spur values are (M × IF) − (N × LO). N/A
means not applicable.
N × LO
M × N Spurious Outputs, IF = 350 MHz
0
1
2
3
4
5
0
1
2
3
4
5
N/A
49
63
83
95
112
7
8
57
39
60
65
97
113
43
66
66
84
91
108
59
72
90
90
104
108
RF = 5500 MHz, LO frequency = 5850 MHz at LO input power =
4 dBm, IF input power = −6 dBm.
0
37
33
69
100
109
55
82
120
121
N × LO
M × IF
0
1
2
3
4
5
0
1
2
3
4
5
N/A
75
11
0
3
18
36
61
60
94
98
41
50
60
87
86
111
53
62
81
81
111
101
38
34
78
80
108
79
51
73
88
102
M × IF
100
101
121
RF = 7000 MHz, LO frequency = 8000 MHz at LO input power =
4 dBm, IF input power = −6 dBm.
N × LO
0
1
2
3
4
5
0
1
2
3
4
5
N/A
50
66
88
80
85
7
11
40
35
71
81
79
43
43
68
67
100
101
59
74
73
98
96
113
71
79
91
92
104
107
RF = 7000 MHz, LO frequency = 7350 MHz at LO input power =
4 dBm, IF input power = −6 dBm.
0
44
85
80
88
N × LO
M × IF
0
1
2
3
4
5
0
1
2
3
4
5
N/A
79
13
0
8
44
39
73
65
105
111
51
73
67
98
93
108
57
75
94
87
103
105
43
34
86
96
107
78
51
72
82
91
M × IF
105
118
122
RF = 8500 MHz, LO frequency = 9500 MHz at LO input power =
4 dBm, IF input power = −6 dBm. N/A is not applicable.
N × LO
0
1
2
3
4
5
0
1
2
3
4
5
N/A
50
8
41
31
38
74
108
112
63
77
63
72
107
109
66
88
81
93
102
107
N/A
N/A
N/A
N/A
N/A
N/A
RF = 8500 MHz, LO frequency = 8850 MHz at LO input power =
4 dBm, IF input power = −6 dBm. N/A is not applicable.
0
66
44
82
105
118
N × LO
M × IF
101
105
120
0
1
2
3
4
5
0
1
2
3
4
5
N/A
76
8
21
27
36
79
101
111
53
56
61
71
105
108
53
68
83
92
99
103
N/A
N/A
N/A
N/A
N/A
N/A
0
81
50
95
83
92
M × IF
104
114
120
Rev. 0 | Page 24 of 30
Data Sheet
HMC6505A
M × N Spurious Outputs, IF = 2500 MHz
RF = 8500 MHz, LO frequency = 11000 MHz at LO input
power = 4 dBm, IF input power = −6 dBm. N/A is not
applicable.
RF = 5500 MHz, LO frequency = 8000 MHz at LO input power =
4 dBm, IF input power = −6 dBm.
N × LO
N × LO
0
1
2
3
4
5
0
1
2
3
4
5
0
1
2
3
4
5
N/A
47
7
59
39
40
83
105
115
46
80
73
77
108
109
N/A
N/A
97
N/A
N/A
N/A
N/A
N/A
N/A
0
1
2
3
4
5
N/A
43
57
76
97
116
6
10
34
34
80
94
119
41
42
64
65
96
112
57
70
78
87
94
110
70
79
93
92
107
113
0
0
50
54
83
120
120
64
113
115
115
M × IF
M × IF
92
98
109
113
104
104
RF = 7000 MHz, LO frequency = 9500 MHz at LO input power =
4 dBm, IF input power = −6 dBm. N/A is not applicable.
N × LO
0
1
2
3
4
5
0
1
2
3
4
5
N/A
46
7
41
36
37
83
101
118
62
73
63
69
112
112
67
N/A
N/A
N/A
101
101
106
0
84
57
56
87
122
121
103
104
101
111
M × IF
108
100
115
Rev. 0 | Page 25 of 30
HMC6505A
Data Sheet
THEORY OF OPERATION
The HMC6505A is a GaAs, pHEMT, MMIC I/Q upconverter
with an integrated LO buffer that upconverts IF between dc to
3 GHz to RF between 5.5 GHz and 8.6 GHz. LO buffer
amplifiers are included on chip to allow LO drive range of up
to 6 dBm for full performance. The LO path feeds a quadrature
splitter followed by on-chip baluns that drive the I and Q singly
balanced cores of the passive mixers. The RF output of the I and
Q mixers are then summed through an on-chip Wilkinson power
combiner and relatively matched to provide a single-ended, 50 Ω
output signal that is amplified by the RF amplifiers to produce a
dc-coupled and 50 Ω matched RF output signal at the RFOUT
port. A voltage attenuator precedes the RF amplifiers for desired
gain control.
Rev. 0 | Page 26 of 30
Data Sheet
HMC6505A
APPLICATIONS INFORMATION
To select the upper sideband, connect the IF1 pin to the 90°
TYPICAL APPLICATION CIRCUIT
port of the hybrid and the IF2 pin to the 0° port of the hybrid.
To select the lower sideband, connect the IF1 pin to the 0° port
of the hybrid and the IF2 pin to the 90° port of the hybrid.
Figure 103 shows the typical application circuit for the
HMC6505A. To select the appropriate sideband, an external 90°
hybrid is required. For applications not requiring operation to
dc, use an off chip dc blocking capacitor. For applications that
require the LO signal at the output to be suppressed, use a bias
tee or RF feed. Ensure that the source or sink current used for
LO suppression is <3 mA for each IF port to prevent damage to
the device. The common-mode voltage for each IF port is 0 V.
HMC6505A
Figure 103. Typical Application Circuit
Rev. 0 | Page 27 of 30
HMC6505A
Data Sheet
Layout
EVALUATION BOARD INFORMATION
Solder the exposed pad on the underside of the HMC6505A to a
low thermal and electrical impedance ground plane. This pad is
typically soldered to an exposed opening in the solder mask on
the evaluation board. Connect these ground vias to all other
ground layers on the evaluation board to maximize heat
dissipation from the device package. Figure 104 and Figure 105
show the printed circuit board land pattern footprint for the
HMC6505A and the solder paste stencil for the HMC6505A
The circuit board used in the application must use RF circuit
design techniques. Signal lines must have 50 Ω impedance and
connect the package ground leads and exposed pad directly to
the ground plane similarly to that shown in Figure 104. Use a
sufficient number of via holes to connect the top and bottom
ground planes. The evaluation board shown in Figure 106 is
available from Analog Devices upon request.
EV1HMC6505ALC5 Power-On Sequence
evaluation board.
To set up the EV1HMC6505ALC5, take the following steps:
0.217" SQUARE
0.004" MASK/METAL OVERLAP
SOLDERMASK
0.010" MIN MASK WIDTH
1. Power up VGG with a −2 V supply.
2. Power up VDD1 with a 5 V supply.
3. Power up VDD2 and VDD3 with another 5 V supply.
4. Power up VCTRL with a −4 V supply (for maximum
conversion gain).
GROUND PAD
PAD SIZE
0.026" × 0.010"
PIN 1
0.197"
[0.50]
5. Adjust the VGG supply between −2 V to 0 V until the total
RF supply current (IDD2 + IDD3) = 120 mA.
6. Connect LOIN to the LO signal generator with an LO
power of 4 dBm.
0.156"
MASK
OPENING
ø.034"
TYPICAL
VIA SPACING
7. Apply the IF1 and IF2 signals.
ø.010"
TYPICAL VIA
EV1HMC6505ALC5 Power Off Sequence
To turn off the EV1HMC6505ALC5, take the following steps:
0.010" REF
0.138" SQUARE MASK OPENING
0.02 ×45° CHAMFER FOR PIN1
0.030"
MASK OPENING
1. Turn off the LO and IF signals.
2. Set VGG to −2 V.
3. Set VCTRL to 0 V.
0.146" SQUARE
GROUND PAD
Figure 104. Printed Circuit Board Land Pattern Footprint
4. Set the VDD1, VDD2, and VDD3 supplies to 0 V and then
turn them off.
0.017
5. Turn off the VGG supply.
0.0197
TYP
0.219
SQUARE
0.132
SQUARE
0.017
0.027
TYP
R0.0040 TYP
132 PLCS
0.010
TYP
Figure 105. Solder Paste Stencil
Rev. 0 | Page 28 of 30
Data Sheet
HMC6505A
Figure 106. HMC6505A Evaluation Board Top Layer
Table 5. Bill of Materials for the EV1HMC6505ALC5 Evaluation Board PCB
Reference
Designator
Quantity
Description
Manufacturer
Part Number
1
Not applicable PCB, EV1HMC6505ALC5; circuit board
material: Rogers 4350
Analog Devices supplied
125487
1
2
4
Not applicable MCH, evaluation heatsink, aluminum
Analog Devices supplied
Johnson Components
Molex
104635
142-0701-851
87832-0420
J1, J2
Johnson SMA connectors
J5, J6, J8, J9
2 mm, four vertical position connector
headers
2
5
J3, J4
C1, C3, C4,
C13, C16
SRI K connectors
Ceramic capacitors, 100 pF, 5%, 50 V, C0G,
0402
SRI Connector Gage Company
Murata Manufacturing
25-146-1000-92
GRM188R71H102KA01D
5
5
1
C5, C7, C8,
C14, C17
C9, C11, C12,
C15, C18
Ceramic capacitors, 1000 pF, 50 V, 10%,
X7R, 0603
Tantalum capacitors, 2.2 μF, 25 V, 10%,
SMD, Case A
Keystone Electronics Corporation
5019
AVX
TAJA225K025R
HMC6505A
HMC6505A
Device under test (DUT)
Analog Devices
Rev. 0 | Page 29 of 30
HMC6505A
Data Sheet
OUTLINE DIMENSIONS
5.05
4.90 SQ
4.75
0.36
0.30
0.24
PIN 1
0.08
REF
INDICATOR
PIN 1
32
25
24
1
0.50
BSC
3.60
3.50 SQ
3.40
EXPOSED
PAD
17
8
16
9
0.38
0.32
0.26
0.20 MIN
BOTTOM VIEW
3.50 REF
TOP VIEW
SIDE VIEW
1.10
1.00
0.90
4.10 REF
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SEATING
PLANE
SECTION OF THIS DATA SHEET.
Figure 107. 32-Terminal Ceramic Leadless Chip Carrier [LCC],
(E-32-1)
Dimensions shown in millimeters
ORDERING GUIDE
Temperature
Range
Package Body
Material
Package
Description
MSL
Package Package
Model1
Lead Finish
Rating2 Option
Marking3
HMC6505ALC5
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
Alumina Ceramic
Alumina Ceramic
Alumina Ceramic
Gold over Nickel
32-Terminal LCC
32-Terminal LCC
32-Terminal LCC
MSL3
MSL3
MSL3
E-32-1
H6505A
XXXX
H6505A
XXXX
H6505A
XXXX
HMC6505ALC5TR
HMC6505ALC5TR-R5
EV1HMC6505ALC5
Gold over Nickel
Gold over Nickel
E-32-1
E-32-1
Evaluation PCB
Assembly
1 The HMC6505ALC5, the HMC6505ALC5TR, and HMC6505ALC5TR-R5 are RoHS Compliant Parts.
2 See the Absolute Maximum Ratings section.
3 The HMC6505ALC5, the HMC6505ALC5TR, and HMC6505ALC5TR-R5 have a four-digit lot number.
©2017 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D13900-0-8/17(0)
Rev. 0 | Page 30 of 30
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明