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HMC717LP3TR [ADI]

RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER;
HMC717LP3TR
型号： HMC717LP3TR
厂家： ADI    ADI
描述：

RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

放大器 射频 微波 功率放大器
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HMC717LP3 / 717LP3E  
v03.1112  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER, 4.8 - 6.0 GHz  
Features  
Typical Applications  
The HMC717LP3(E) is ideal for:  
• Fixed Wireless and LTE/WiMAX/4G  
• BTS & Infrastructure  
Noise Figure: 1.1 dB  
Gain: 16.5 dB  
Output IP3: +31.5 dBm  
Single Supply: +3V to +5V  
16 Lead 3x3mm QFN Package: 9 mm2  
• Repeaters and Femtocells  
• Public Safety Radio  
• Access Points  
Functional Diagram  
General Description  
The HMC717LP3(E) is a GaAs PHEMT MMIC  
Low Noise Amplifier that is ideal for fixed wireless  
and LTE/WiMAX/4G basestation front-end receivers  
operating between 4.8 and 6.0 GHz. The amplifier  
has been optimized to provide 1.1 dB noise figure,  
16.5 dB gain and +31.5 dBm output IP3 from a single  
supply of +5V. Input and output return losses are  
excellent and the LNA requires minimal external  
matching and bias decoupling components. The  
HMC717LP3(E) can be biased with +3V to +5V and  
features an externally adjustable supply current  
which allows the designer to tailor the linearity  
performance of the LNA for each application.  
Electrical Specifications  
TA = +25° C, Rbias = 2k Ohms for Vdd = 5V, Rbias = 20k Ohms for Vdd = 3V[1] [2]  
Vdd = +3V  
Typ.  
4.8 - 6.0  
14.3  
0.01  
1.25  
13  
Vdd = +5V  
Typ.  
4.8 - 6.0  
16.5  
0.01  
1.1  
Parameter  
Units  
Min.  
12  
Max.  
Min.  
13.5  
Max.  
1.4  
Frequency Range  
GHz  
dB  
Gain  
Gain Variation Over Temperature  
Noise Figure  
dB/ °C  
dB  
1.5  
Input Return Loss  
13  
dB  
Output Return Loss  
13  
18  
dB  
Output Power for 1 dB Compression (P1dB)  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)  
Total Supply Current (Idd)  
12  
14  
15  
18.5  
19.5  
31.5  
73  
dBm  
dBm  
dBm  
mA  
15  
25.5  
31  
27[3]  
40  
100  
[1] Rbias resistor sets current, see application circuit herein  
[2] Vdd = Vdd1 = Vdd2  
[3] Guaranteed by Design at 5GHz.  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
1
HMC717LP3 / 717LP3E  
v03.1112  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER, 4.8 - 6.0 GHz  
[1][2]  
[1]  
Broadband Gain & Return Loss  
Gain vs. Temperature  
25  
20  
15  
10  
5
25  
21  
17  
S21  
S11  
0
-5  
13  
-10  
-15  
-20  
-25  
-30  
+25C  
9
+85C  
-40C  
Vdd=5V  
Vdd=3V  
S22  
5
4.5  
1
2
3
4
5
6
7
8
9
10  
4.9  
5.3  
5.7  
6.1  
6.5  
6.5  
6.5  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
[2]  
[1]  
Gain vs. Temperature  
Input Return Loss vs. Temperature  
25  
0
21  
17  
13  
9
+25C  
-5  
+85C  
-40C  
-10  
-15  
-20  
+25C  
+85C  
-40C  
5
4.5  
4.9  
5.3  
5.7  
6.1  
6.5  
4.5  
4.9  
5.3  
5.7  
6.1  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
[1]  
[1]  
Reverse Isolation vs.Temperature  
Output Return Loss vs. Temperature  
0
-20  
+25C  
+85C  
-40C  
-25  
-30  
-5  
-10  
-15  
-20  
-25  
-35  
+25C  
+85C  
-40C  
-40  
-45  
-50  
4.5  
4.9  
5.3  
5.7  
6.1  
6.5  
4.5  
4.9  
5.3  
5.7  
6.1  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
[1] Vdd = 5V, Rbias = 2kΩ [2] Vdd = 3V, Rbias = 20kΩ  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
2
HMC717LP3 / 717LP3E  
v03.1112  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER, 4.8 - 6.0 GHz  
[1] [2] [4]  
[1] [2]  
Noise Figure vs.Temperature  
P1dB vs. Temperature  
2.1  
24  
+85C  
Vdd=5V  
22  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
0
20  
18  
16  
14  
12  
-40C  
+25C  
+25C  
+85C  
Vdd=5V  
Vdd=3V  
10  
-40C  
Vdd=3V  
8
4.5  
4.9  
5.3  
5.7  
6.1  
6.5  
4.5  
4.9  
5.3  
5.7  
6.1  
6.5  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
[1] [2]  
[1] [2]  
Psat vs. Temperature  
Output IP3 vs.Temperature  
24  
40  
Vdd=5V  
22  
Vdd=5V  
37  
20  
18  
16  
14  
12  
34  
31  
28  
25  
22  
+25C  
+85C  
-40C  
+25C  
+85C  
-40C  
Vdd=3V  
10  
19  
Vdd=3V  
8
16  
4.5  
4.9  
5.3  
5.7  
6.1  
6.5  
4.5  
4.9  
5.3  
5.7  
6.1  
6.5  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Output IP3 and Total Supply Current vs.  
Supply Voltage @ 4800 MHz [3]  
Output IP3 and Total Supply Current vs.  
Supply Voltage @ 5900 MHz [3]  
95  
95  
36  
34  
32  
30  
28  
26  
24  
36  
34  
32  
30  
28  
26  
24  
80  
65  
50  
35  
20  
5
80  
65  
50  
35  
20  
5
Idd  
IP3  
Idd  
IP3  
2.7  
3.1  
3.5  
3.9  
4.3  
4.7  
5.1  
5.5  
2.7  
3.1  
3.5  
3.9  
4.3  
4.7  
5.1  
5.5  
Voltage Supply (V)  
Voltage Supply (V)  
[1] Vdd = 5V, Rbias = 2k Ω  
[2] Vdd = 3V, Rbias = 20kΩ  
[3] Rbias = 2kΩ for Vdd = 5V, Rbias = 20kΩ for Vdd = 3V  
[4] Measurement reference plane shown on evaluation PCB drawing.  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
3
HMC717LP3 / 717LP3E  
v03.1112  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER, 4.8 - 6.0 GHz  
[2]  
[1]  
Power Compression @ 4800 MHz  
Power Compression @ 4800 MHz  
25  
20  
15  
10  
5
25  
20  
15  
10  
5
0
0
Pout  
Gain  
PAE  
Pout  
Gain  
PAE  
-5  
-5  
-10  
-10  
-20  
-17  
-14  
-11  
-8  
-5  
-2  
1
4
-20  
-15  
-10  
-5  
0
5
INPUT POWER (dBm)  
INPUT POWER (dBm)  
[1]  
[2]  
Power Compression @ 5900 MHz  
Power Compression @ 5900 MHz  
25  
25  
20  
15  
10  
5
20  
15  
10  
5
0
0
Pout  
Gain  
PAE  
Pout  
Gain  
PAE  
-5  
-5  
-10  
-10  
-20  
-16  
-12  
-8  
-4  
0
4
8
-20  
-15  
-10  
-5  
0
5
INPUT POWER (dBm)  
INPUT POWER (dBm)  
Gain, Power & Noise Figure  
vs. Supply Voltage @ 4800 MHz  
Gain, Power & Noise Figure  
vs. Supply Voltage @ 5900 MHz  
[3]  
[3]  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1
22  
22  
P1dB  
Gain  
20  
18  
16  
14  
12  
10  
8
P1dB  
Gain  
20  
18  
16  
14  
12  
10  
NF  
NF  
0.9  
2.7  
3.1  
3.5  
3.9  
4.3  
4.7  
5.1  
5.5  
2.7  
3.1  
3.5  
3.9  
4.3  
4.7  
5.1  
5.5  
Voltage Supply (V)  
Voltage Supply (V)  
[1] Vdd = 5V, Rbias = 2k Ω [2] Vdd = 3V, Rbias = 20kΩ [3] Rbias = 2kΩ for Vdd = 5V, Rbias = 20kΩ for Vdd = 3V  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
4
HMC717LP3 / 717LP3E  
v03.1112  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER, 4.8 - 6.0 GHz  
Output IP3 vs. Rbias @ 4800 MHz  
Gain, Noise Figure & Rbias @ 4800 MHz  
32  
30  
28  
26  
24  
22  
20  
2.2  
20  
17  
14  
11  
8
Vdd=3V  
Vdd=5V  
Vdd=3V  
Vdd=5V  
2
1.8  
1.6  
1.4  
1.2  
5
1
2
100  
1000  
10000  
Rbias (Ohms)  
100000  
100  
1000  
10000  
100000  
Rbias (Ohms)  
Output IP3 vs. Rbias @ 5900 MHz  
Gain, Noise Figure & Rbias @ 5900 MHz  
35  
1.7  
18  
16  
14  
12  
10  
8
Vdd=3V  
Vdd=5V  
Vdd=3V  
Vdd=5V  
1.6  
1.5  
1.4  
1.3  
1.2  
32  
29  
26  
23  
20  
1.1  
6
100  
1000  
10000  
Rbias (Ohms)  
100000  
100  
1000  
10000  
100000  
Rbias (Ohms)  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
5
HMC717LP3 / 717LP3E  
v03.1112  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER, 4.8 - 6.0 GHz  
Absolute Bias Resistor  
Range & Recommended Bias Resistor Values  
Rbias (Ohms)  
Vdd (V)  
Idd (mA)  
Min  
Max  
Recommended  
2k  
4.7k  
20k  
261  
1k  
20  
26  
31  
50  
65  
73  
3V  
5V  
2k [1]  
Open Circuit  
150 [2]  
Open Circuit  
2k  
[1] With Vdd= 3V and Rbias < 2kΩ may result in the part becoming conditionally stable which is not recommended.  
[2] With Vdd = 5V and Rbias<150Ω may result in the part becoming conditionally stable which is not recommended.  
Absolute Maximum Ratings  
Drain Bias Voltage (Vdd)  
+5.5V  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RF Input Power (RFIN)  
(Vdd = +5 Vdc)  
+10 dBm  
150 °C  
0.5 W  
Channel Temperature  
Continuous Pdiss (T= 85 °C)  
(derate 7.73 mW/°C above 85 °C)  
Thermal Resistance  
(channel to ground paddle)  
129.5 °C/W  
Storage Temperature  
Operating Temperature  
ESD Sensitivity (HBM)  
-65 to +150 °C  
-40 to +85 °C  
Class 1A  
Typical Supply Current vs. Supply Voltage  
(Rbias = 2kΩ for Vdd = 5V, Rbias = 20kΩ for Vdd = 3V)  
Vdd (V)  
2.7  
Idd (mA)  
23  
3.0  
31  
3.3  
39  
4.5  
60  
5.0  
73  
5.5  
85  
Note: Amplifier will operate over full voltage ranges shown above.  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
6
HMC717LP3 / 717LP3E  
v03.1112  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER, 4.8 - 6.0 GHz  
Outline Drawing  
NOTES:  
1. LEADFRAME MATERIAL: COPPER ALLOY  
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]  
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE  
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.  
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.  
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.  
6. ALL GROUND LEADS AND GROUND PADDLE  
MUST BE SOLDERED TO PCB RF GROUND.  
7. REFER TO HITTITE APPLICATION NOTE FOR  
SUGGESTED LAND PATTERN.  
Package Information  
Part Number  
Package Body Material  
Lead Finish  
MSL Rating  
Package Marking [3]  
717  
XXXX  
MSL1 [1]  
HMC717LP3  
Low Stress Injection Molded Plastic  
Sn/Pb Solder  
717  
XXXX  
MSL1 [2]  
HMC717LP3E  
RoHS-compliant Low Stress Injection Molded Plastic  
100% matte Sn  
[1] Max peak reflow temperature of 235 °C  
[2] Max peak reflow temperature of 260 °C  
[3] 4-Digit lot number XXXX  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
7
HMC717LP3 / 717LP3E  
v03.1112  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER, 4.8 - 6.0 GHz  
Pin Descriptions  
Pin Number  
Function  
Description  
Interface Schematic  
1, 3 - 7, 9, 10,  
12, 14, 16  
No connection required. These pins may be connected  
N/C  
to RF/DC ground without affecting performance.  
This pin is DC coupled  
See the application circuit for off-chip component.  
2
RFIN  
This pin is used to set the DC current of the amplifier by  
selection of the external bias resistor. See application circuit.  
8
BIAS  
11  
RFOUT  
This pin is AC coupled and matched to 50 Ohms  
Power supply voltage. Bypass capacitors are required.  
See application circuit.  
13, 15  
Vdd2, Vdd1  
GND  
Package bottom must be connected to RF/DC ground  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
8
HMC717LP3 / 717LP3E  
v03.1112  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER, 4.8 - 6.0 GHz  
Application Circuit  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
9
HMC717LP3 / 717LP3E  
v03.1112  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER, 4.8 - 6.0 GHz  
Evaluation PCB  
List of Materials for Evaluation PCB 122416 [1]  
The circuit board used in this application should use  
RF circuit design techniques. Signal lines should  
have 50 Ohm impedance while the package ground  
leads and exposed paddle should be connected  
directly to the ground plane similar to that shown.  
A sufficient number of via holes should be used to  
connect the top and bottom ground planes. The  
evaluation board should be mounted to an appro-  
priate heat sink. The evaluation circuit board shown  
is available from Hittite upon request.  
Item  
Description  
PCB Mount SMA Connector  
DC Pins  
J1, J2  
J3 - J5  
C1  
10 nF Capacitor, 0402 Pkg.  
1000 pF Capacitor, 0603 Pkg.  
100 pF Capacitor, 0603 Pkg.  
1.2 pF Capacitor, 0402 Pkg.  
2k Ohm Resistor, 0402 Pkg. (Rbias)  
0 Ohm Resistor, 0402 Pkg.  
HMC717LP3(E) Amplifier  
120586 Evaluation PCB  
C2, C4  
C3, C5  
C6  
R1  
R2, R3  
U1  
[2]  
PCB  
[1] Reference this number when ordering complete evaluation PCB  
[2] Circuit Board Material: Rogers 4350.  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
10  

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