HMC8412LP2FETR [ADI]
Low Noise Amplifier, 0.4 GHz to 11 GHz;
| 型号： | HMC8412LP2FETR |
| 厂家： | 
ADI |
| 描述： | Low Noise Amplifier, 0.4 GHz to 11 GHz |
| 文件： | 总18页 (文件大小：430K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Low Noise Amplifier,
0.4 GHz to 11 GHz
HMC8412
Data Sheet
FEATURES
FUNCTIONAL BLOCK DIAGRAM
HMC8412
Low noise figure: 1.4 dB typical
Single positive supply (self biased)
High gain: ≤15.5 dB typical
6
1
2
3
V
DD
R
BIAS
GND
RF
5 GND
High OIP3: ≤33 dBm typical
4
RF
IN
OUT
RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP
Figure 1.
APPLICATIONS
Test instrumentation
Telecommunications
Military radar and communication
Electronic warfare
Aerospace
GENERAL DESCRIPTION
The HMC8412 is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), pseudomorphic high
electron mobility transistor (pHEMT), low noise wideband
amplifier that operates from 0.4 GHz to 11 GHz.
(LO) driver for many Analog Devices, Inc., balanced, inphase
and quadrature (I/Q) or image rejection mixers.
The HMC8412 also features inputs and outputs that are
internally matched to 50 Ω, making the device ideal for surface-
mount technology (SMT)-based, high capacity microwave radio
applications.
The HMC8412 provides a typical gain of 15.5 dB, a 1.4 dB typical
noise figure, and a typical output third-order intercept (OIP3) of
≤33 dBm, requiring only 60 mA from a 5 V drain supply voltage.
The saturated output power (PSAT) of ≤20.5 dBm typical enables
the low noise amplifier (LNA) to function as a local oscillator
The HMC8412 is housed in an RoHS-compliant, 2 mm ×
2 mm, 6-lead LFCSP.
Rev. 0
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice.
No license is granted by implication or otherwise under any patent or patent rights of Analog
Devices. Trademarks and registeredtrademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Technical Support
©2020 Analog Devices, Inc. All rights reserved.
www.analog.com
HMC8412
Data Sheet
TABLE OF CONTENTS
Features.............................................................................................. 1
Electrostatic Discharge (ESD) Ratings.......................................5
ESD Caution ..................................................................................5
Pin Configuration and Function Descriptions .............................6
Interface Schematics .....................................................................6
Typical Performance Characteristics .............................................7
Theory of Operation ...................................................................... 16
Applications Information ............................................................. 17
Recommended Bias Sequencing .............................................. 17
Outline Dimensions....................................................................... 18
Ordering Guide .......................................................................... 18
Applications ...................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications .................................................................................... 3
0.4 GHz to 3 GHz Frequency Range ......................................... 3
3 GHz to 9 GHz Frequency Range............................................. 3
9 GHz to 11 GHz Frequency Range .......................................... 4
Absolute Maximum Ratings ........................................................... 5
Thermal Resistance...................................................................... 5
REVISION HISTORY
5/2020—Revision 0: Initial Version
Rev. 0 | Page 2 of 18
Data Sheet
HMC8412
SPECIFICATIONS
0.4 GHz TO 3 GHz FREQUENCY RANGE
VDD = 5 V, supply current (IDQ) = 60 mA, RBIAS = 1.47 kΩ, and TA = 25°C, unless otherwise noted.
Table 1.
Parameter
Min Typ
Max Unit
Test Conditions/Comments
FREQUENCY RANGE
0.4
3
GHz
dB
dB/°C
dB
GAIN
13
15
2
15.5
0.010
1.4
Gain Variation over Temperature
NOISE FIGURE
RETURN LOSS
Input
Output
14
13
dB
dB
OUTPUT
Power for 1 dB Compression (OP1dB)
PSAT
OIP3
18
20.5
32
dBm
dBm
dBm
dBm
%
Measurement taken at output power (POUT) per tone = 0 dBm
Measurement taken at POUT per tone = 0 dBm
Measured at PSAT
Second-Order Intercept (OIP2)
40
POWER ADDED EFFICIENCY (PAE)
28
SUPPLY
IDQ
VDD
60
5
mA
V
6
3 GHz TO 9 GHz FREQUENCY RANGE
VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ, and TA = 25°C, unless otherwise noted.
Table 2.
Parameter
Min
3
Typ
Max
Unit
GHz
dB
Test Conditions/Comments
FREQUENCY RANGE
9
GAIN
13
15
Gain Variation over Temperature
0.012
1.5
dB/°C
dB
NOISE FIGURE
RETURN LOSS
Input
Output
OUTPUT
OP1dB
PSAT
15
16
dB
dB
15.5
18
20.5
33
41.5
29
dBm
dBm
dBm
dBm
%
OIP3
OIP2
Measurement taken at POUT per tone = 0 dBm
Measurement taken at POUT per tone = 0 dBm
Measured at PSAT
PAE
SUPPLY
IDQ
VDD
60
5
mA
V
2
6
Rev. 0 | Page 3 of 18
HMC8412
Data Sheet
9 GHz TO 11 GHz FREQUENCY RANGE
VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ, and TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Min
9
Typ
Max
Unit
GHz
dB
Test Conditions/Comments
FREQUENCY RANGE
11
GAIN
12
14
Gain Variation over Temperature
0.022
1.8
dB/°C
dB
NOISE FIGURE
RETURN LOSS
Input
14
10
dB
dB
Output
OUTPUT
OP1dB
PSAT
OIP3
OIP2
11
14
18
31
49.5
15.5
dBm
dBm
dBm
dBm
%
Measurement taken at POUT per tone = 0 dBm
Measurement taken at POUT per tone = 0 dBm
Measured at PSAT
PAE
SUPPLY
IDQ
VDD
60
5
mA
V
2
6
Rev. 0 | Page 4 of 18
Data Sheet
HMC8412
ABSOLUTE MAXIMUM RATINGS
Table 4.
ELECTROSTATIC DISCHARGE (ESD) RATINGS
The following ESD information is provided for handling of
ESD-sensitive devices in an ESD protected area only.
Parameter
Rating
7 V
VDD
RF Input Power
Continuous Power Dissipation (PDISS), TA = 85°C 0.82 W
(Derate 9.15 mW/°C Above 85°C)
25 dBm
Human body model (HBM) per ANSI/ESDA/JEDEC JS-001.
ESD Ratings for HMC8412
Temperature
Storage Range
Operating Range
Peak Reflow (Moisture Sensitivity Level 1
(MSL1))1
Table 6. HMC8412, 6-Lead LFCSP
−65°C to +150°C
−40°C to +85°C
260°C
ESD Model
Withstand Threshold (V)
Class
HBM
500
1B
ESD CAUTION
Junction Temperature to Maintain 1,000,000 175°C
Hours Mean Time to Failure (MTTF)
Nominal Junction Temperature (TA = 85°C, 117.8°C
V
DD = 5 V, IDQ = 60 mA
1 See the Ordering Guide for more information.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the
operational section of this specification is not implied.
Operation beyond the maximum operating conditions for
extended periods may affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Close attention to
PCB thermal design is required.
θJC is the junction to case thermal resistance.
Table 5. Thermal Resistance
Package Type
θJC
Unit
CP-6-12
109.3
°C/W
Rev. 0 | Page 5 of 18
HMC8412
Data Sheet
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
HMC8412
TOP VIEW
(Not to Scale)
6
1
2
3
V
DD
R
BIAS
GND
5 GND
4
RF
RF
OUT
IN
NOTES
1. EXPOSED PAD. THE EXPOSED PAD
MUST BE CONNECTED TO THE RF
AND DC GROUND.
Figure 2. Pin Configuration
Table 7. Pin Function Descriptions
Pin No. Mnemonic Description
1
RBIAS
Current Mirror Bias Resistor. Use the RBIAS pin to set the quiescent current by connecting the external bias resistor
as defined in Table 8. Refer to Figure 60 for the bias resistor connection. See Figure 3 for the interface schematic.
2, 5
3
4
GND
RFIN
RFOUT
VDD
Ground. The GND pin must be connected to RF and dc ground. See Figure 6 for the interface schematic.
RF Input. The RFIN pin is ac-coupled and matched to 50 Ω. See Figure 4 for the interface schematic.
RF Output. The RFOUT pin is ac-coupled and matched to 50 Ω. See Figure 5 for the interface schematic.
Drain Supply Voltage for the Amplifier. See Figure 5 for the interface schematic.
6
EPAD
Exposed Pad. The exposed pad must be connected to the RF and dc ground.
INTERFACE SCHEMATICS
R
V
DD
BIAS
RF
OUT
Figure 3. RBIAS Interface Schematic
Figure 5. VDD and RFOUT Interface Schematic
GND
RF
IN
Figure 4. RFIN Interface Schematic
Figure 6. GND Interface Schematic
Rev. 0 | Page 6 of 18
Data Sheet
HMC8412
TYPICAL PERFORMANCE CHARACTERISTICS
20
18
16
14
12
10
8
15
10
5
INPUT RETURN LOSS
GAIN
0
–5
OUTPUT RETURN LOSS
6
–10
–15
–20
4
+85°C
+25°C
–40°C
2
0
300
0
2
4
6
8
10
12
14
16
18
20
400
500
600
700
800
900
1000
FREQUENCY (GHz)
FREQUENCY (MHz)
Figure 7. Broadband Gain and Return Loss vs. Frequency,
10 MHz to 20 GHz, VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ
Figure 10. Gain vs. Frequency for Various Temperatures, 300 MHz to 1 GHz,
VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ
18
18
16
14
12
10
8
16
14
12
10
8
6
6
4
4
2
0
2V, 30mA
3V, 40mA
4V, 50mA
5V, 60mA
6V, 75mA
+85°C
+25°C
–40°C
2
0
1
2
3
4
5
6
7
8
9
10 11 12 13
0
1
2
3
4
5
6
7
8
9
10 11 12 13
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 8. Gain vs. Frequency for Various Temperatures, 1 GHz to 13 GHz,
VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ
Figure 11. Gain vs. Frequency for Various VDD and IDQ Values,
300 MHz to 13 GHz, RBIAS = 1.47 kΩ
18
16
14
12
10
8
0
+85°C
+25°C
–40°C
–5
–10
6
14kΩ, 20mA
5.9kΩ, 30mA
–15
4
2
0
3.3kΩ, 40mA
2.1kΩ, 50mA
1.47kΩ, 60mA
1kΩ, 70mA
670Ω, 80mA
–20
0
1
2
3
4
5
6
7
8
9
10 11 12 13
300
400
500
600
700
800
900
1000
FREQUENCY (GHz)
FREQUENCY (MHz)
Figure 9. Gain vs. Frequency for Various RBIAS Values and IDQ
,
Figure 12. Input Return Loss vs. Frequency for Various Temperatures,
300 MHz to 1 GHz, VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ
300 MHz to 13 GHz, VDD = 5 V
Rev. 0 | Page 7 of 18
HMC8412
Data Sheet
0
0
–5
+85°C
+25°C
–40°C
2V, 30mA
3V, 40mA
4V, 50mA
5V, 60mA
6V, 75mA
–5
–10
–15
–20
–10
–15
–20
1
2
3
4
5
6
7
8
9
10 11 12 13
0
1
2
3
4
5
6
7
8
9
10 11 12 13
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 13. Input Return Loss vs. Frequency for Various Temperatures,
1 GHz to 13 GHz, VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ
Figure 16. Input Return Loss vs. Frequency for Various VDD and IDQ Values,
300 MHz to 13 GHz, RBIAS = 1.47 kΩ
0
0
14kΩ, 20mA
5.9kΩ, 30mA
3.3kΩ, 40mA
+85°C
+25°C
–40°C
2.1kΩ, 50mA
1.47kΩ, 60mA
1kΩ, 70mA
–5
–10
–15
–20
–5
–10
–15
–20
670Ω, 80mA
0
1
2
3
4
5
6
7
8
9
10 11 12 13
300
400
500
600
700
800
900
1000
FREQUENCY (GHz)
FREQUENCY (MHz)
Figure 14. Input Return Loss vs. Frequency for Various RBIAS Values and IDQ
,
Figure 17. Output Return Loss vs. Frequency for Various Temperatures,
300 MHz to 1 GHz, RBIAS = 1.47 kΩ
300 MHz to 13 GHz, VDD = 5 V
0
0
2V, 30mA
3V, 40mA
4V, 50mA
5V, 60mA
6V, 75mA
–5
+85°C
+25°C
–40°C
–5
–10
–15
–20
–10
–15
–20
1
2
3
4
5
6
7
8
9
10 11 12 13
0
1
2
3
4
5
6
7
8
9
10 11 12 13
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 15. Output Return Loss vs. Frequency for Various Temperatures,
1 GHz to 13 GHz, VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ
Figure 18. Output Return Loss vs. Frequency for Various VDD and IDQ Values,
300 MHz to 13 GHz, RBIAS = 1.47 kΩ
Rev. 0 | Page 8 of 18
Data Sheet
HMC8412
0
0
–5
14kΩ, 20mA
+85°C
+25°C
–40°C
5.9kΩ, 30mA
3.3kΩ, 40mA
2.1kΩ, 50mA
1.47kΩ, 60mA
1kΩ, 70mA
–5
–10
–15
–20
–10
–15
–20
–25
–30
–35
–40
670Ω, 80mA
0
1
2
3
4
5
6
7
8
9
10 11 12 13
0
1
2
3
4
5
6
7
8
9
10 11 12 13
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 19. Output Return Loss vs. Frequency for Various RBIAS Values and IDQ
,
Figure 22. Reverse Isolation vs. Frequency for Various Temperatures,
300 MHz to 13 GHz, VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ
300 MHz to 13 GHz, VDD = 5 V
5.0
5.0
+85°C
+85°C
4.5
4.5
+25°C
+25°C
–40°C
4.0
–40°C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
300
400
500
600
700
800
900
1000
1
2
3
4
5
6
7
8
9
10 11 12 13
FREQUENCY (MHz)
FREQUENCY (GHz)
Figure 20. Noise Figure vs. Frequency for Various Temperatures,
300 MHz to 1 GHz, VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ
Figure 23. Noise Figure vs. Frequency for Various Temperatures,
1 GHz to 13 GHz, VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ
5.0
5.0
2V, 30mA
14kΩ, 20mA
3V, 40mA
4V, 50mA
5V, 60mA
6V, 75mA
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
4.5
5.9kΩ, 30mA
3.3kΩ, 40mA
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
2.1kΩ, 50mA
1.47kΩ, 60mA
1kΩ, 70mA
670Ω, 80mA
0
1
2
3
4
5
6
7
8
9
10 11 12 13
0
1
2
3
4
5
6
7
8
9
10 11 12 13
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 21. Noise Figure vs. Frequency for Various VDD and IDQ Values,
300 MHz to 13 GHz, RBIAS = 1.47 kΩ
Figure 24. Noise Figure vs. Frequency for Various RBIAS Values and IDQ
,
300 MHz to 13 GHz, VDD = 5 V
Rev. 0 | Page 9 of 18
HMC8412
Data Sheet
24
20
16
12
8
24
20
16
12
8
2V, 30mA
3V, 40mA
4V, 50mA
5V, 60mA
6V, 75mA
4
4
+85°C
+25°C
–40°C
0
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13
0
1
2
3
4
5
6
7
8
9
10 11 12 13
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 25. OP1dB vs. Frequency for Various Temperatures,
300 MHz to 13 GHz, VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ
Figure 28. OP1dB vs. Frequency for Various VDD and IDQ Values,
300 MHz to 13 GHz, RBIAS = 1.47 kΩ
24
25
20
15
10
20
16
12
8
5
2.1kΩ, 50mA
1.47kΩ, 60mA
1kΩ, 70mA
4
+85°C
+25°C
–40°C
14kΩ, 20mA
5.9kΩ, 30mA
3.3kΩ, 40mA
670Ω, 80mA
0
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13
0
1
2
3
4
5
6
7
8
9
10 11 12 13
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 26. OP1dB vs. Frequency for Various RBIAS Values and IDQ
,
Figure 29. PSAT vs. Frequency for Various Temperatures,
300 MHz to 13 GHz, VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ
300 MHz to 13 GHz, VDD = 5 V
25
20
15
25
20
15
10
5
10
14kΩ, 20mA
5.9kΩ, 30mA
3.3kΩ, 40mA
2.1kΩ, 50mA
1.47kΩ, 60mA
1kΩ, 70mA
2V, 30mA
5
0
3V, 40mA
4V, 50mA
5V, 60mA
6V, 75mA
670Ω, 80mA
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13
0
1
2
3
4
5
6
7
8
9
10 11 12 13
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 30. PSAT vs. Frequency for Various RBIAS Values and IDQ
,
Figure 27. PSAT vs. Frequency for Various VDD and IDQ Values,
300 MHz to 13 GHz, RBIAS = 1.47 kΩ
300 MHz to 13 GHz, VDD = 5 V
Rev. 0 | Page 10 of 18
Data Sheet
HMC8412
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
2V, 30mA
3V, 40mA
4V, 50mA
5V, 60mA
6V, 75mA
+85°C
+25°C
–40°C
5
0
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13
0
1
2
3
4
5
6
7
8
9
10 11 12 13
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 31. PAE vs. Frequency for Various Temperatures,
300 MHz to 13 GHz, VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ
Figure 34. PAE vs. Frequency for Various VDD and IDQ Values,
300 MHz to 13 GHz, RBIAS = 1.47 kΩ
40
30
25
20
15
10
5
80
P
OUT
GAIN
35
30
25
20
15
10
5
PAE
76
72
68
64
60
56
I
DD
14kΩ, 20mA
5.9kΩ, 30mA
3.3kΩ, 40mA
2.1kΩ, 50mA
1.47kΩ, 60mA
1kΩ, 70mA
670Ω, 80mA
0
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13
–13 –11
–9
–7
–5
–3
–1
1
3
5
7
FREQUENCY (GHz)
INPUT POWER (dBm)
Figure 32. PAE vs. Frequency for Various RBIAS Values and IDQ
,
Figure 35. Gain, PAE, POUT, and IDD vs. Input Power,
Power Compression at 1 GHz, VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ
300 MHz to 13 GHz, VDD = 5 V
30
25
20
15
10
5
80
76
72
68
64
60
56
35
30
25
20
15
10
5
90
85
80
75
70
65
60
55
P
P
OUT
OUT
GAIN
GAIN
PAE
PAE
I
I
DD
DD
0
0
–13 –11 –9
–7
–5
–3
–1
1
3
5
7
9
–14 –12 –10 –8 –6 –4 –2
0
2
4
6
8
10 12
INPUT POWER (dBm)
INPUT POWER (dBm)
Figure 33. Gain, PAE, POUT, and Drain Current (IDD) vs. Input Power,
Power Compression at 3 GHz, VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ
Figure 36. Gain, PAE, POUT, and IDD vs. Input Power,
Power Compression at 6 GHz, VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ
Rev. 0 | Page 11 of 18
HMC8412
Data Sheet
20
72
68
64
60
56
25
20
15
10
5
80
70
60
50
P
OUT
GAIN
PAE
I
DD
15
10
5
P
SAT
40
30
GAIN
OP1dB
I
DD
0
0
–14 –12 –10 –8 –6 –4 –2
0
2
4
6
8
10
2
3
4
5
6
INPUT POWER (dBm)
SUPPLY VOLTAGE (V)
Figure 37. Gain, PAE, POUT, and IDD vs. Input Power,
Power Compression at 10 GHz, VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ
Figure 40. Gain, OP1dB, PSAT, and IDD vs. Supply Voltage,
Power Compression at 1 GHz, RBIAS = 1.47 kΩ
25
20
15
10
5
80
70
60
50
40
30
25
20
15
10
5
80
70
60
50
40
30
P
P
SAT
SAT
GAIN
GAIN
OP1dB
OP1dB
I
I
DD
DD
0
0
2
3
4
5
6
2
3
4
5
6
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 38. Gain, OP1dB, PSAT, and IDD vs. Supply Voltage,
Power Compression at 3 GHz, RBIAS = 1.47 kΩ
Figure 41. Gain, OP1dB, PSAT, and IDD vs. Supply Voltage,
Power Compression at 6 GHz, RBIAS = 1.47 kΩ
25
80
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
20
15
10
5
70
60
50
40
30
MAXIMUM P
DISS
P
SAT
1GHz
3GHz
6GHz
10GHz
GAIN
OP1dB
I
DD
0
2
3
4
5
6
–14 –12 –10 –8 –6 –4 –2
0
2
4
6
8
10 12
SUPPLY VOLTAGE (V)
INPUT POWER (dBm)
Figure 39. Gain, OP1dB, PSAT, and IDD vs. Supply Voltage,
Power Compression at 10 GHz, RBIAS = 1.47 kΩ
Figure 42. PDISS vs. Input Power at TA = 85°C,
VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ
Rev. 0 | Page 12 of 18
Data Sheet
HMC8412
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
0
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13
0
1
2
3
4
5
6
7
8
9
10 11 12 13
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 43. OIP3 vs. Frequency for Various Temperatures, 300 MHz to
13 GHz, VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ, POUT per Tone = 0 dBm
Figure 46. OIP3 vs. Frequency for Various Temperatures, 300 MHz to
13 GHz, VDD = 5 V, IDQ = 70 mA, RBIAS = 1 kΩ, POUT per Tone = 0 dBm
40
35
30
25
20
15
40
35
30
25
20
15
10
10
2V, 30mA
2.1kΩ, 50mA
3V, 40mA
14kΩ, 20mA
5.9kΩ, 30mA
3.3kΩ, 40mA
1.47kΩ, 60mA
1kΩ, 70mA
4V, 50mA
5V, 60mA
6V, 75mA
5
5
0
670Ω, 80mA
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13
0
1
2
3
4
5
6
7
8
9
10 11 12 13
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 44. OIP3 vs. Frequency for Various VDD and IDQ Values,
300 MHz to 13 GHz, RBIAS = 1.47 kΩ, POUT per Tone = 0 dBm
Figure 47. OIP3 vs. Frequency for Various RBIAS Values and IDQ
,
300 MHz to 13 GHz, VDD = 5 V, POUT per Tone = 0 dBm
60
50
40
30
20
60
50
40
30
20
10
0
10
0
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
0
1
2
3
4
5
6
7
8
9
10 11 12 13
0
1
2
3
4
5
6
7
8
9
10 11 12 13
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 45. OIP2 vs. Frequency for Various Temperatures, 300 MHz to
13 GHz, VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ, POUT per Tone = 0 dBm
Figure 48. OIP2 vs. Frequency for Various Temperatures, 300 MHz to
13 GHz, VDD = 5 V, IDQ = 70 mA, RBIAS = 1 kΩ, POUT per Tone = 0 dBm
Rev. 0 | Page 13 of 18
HMC8412
Data Sheet
60
50
40
30
20
10
0
60
50
40
30
20
10
0
2V, 30mA
3V, 40mA
4V, 50mA
5V, 60mA
6V, 75mA
2.1kΩ, 50mA
1.47kΩ, 60mA
1kΩ, 70mA
14kΩ, 20mA
5.9kΩ, 30mA
3.3kΩ, 40mA
670Ω, 80mA
0
1
2
3
4
5
6
7
8
9
10 11 12 13
0
1
2
3
4
5
6
7
8
9
10 11 12 13
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 49. OIP2 vs. Frequency for Various VDD and IDQ Values,
300 MHz to 13 GHz, RBIAS = 1.47 kΩ, POUT per Tone = 0 dBm
Figure 52. OIP2 vs. Frequency for Various RBIAS Values and IDQ
,
300 MHz to 13 GHz, VDD = 5 V, POUT per Tone = 0 dBm
60
50
40
30
20
80
70
60
50
40
30
20
1GHz
1GHz
10
3GHz
3GHz
10
6GHz
10GHz
6GHz
10GHz
0
0
0
2
4
6
8
10
0
2
4
6
8
10
P
PER TONE (dBm)
P
PER TONE (dBm)
OUT
OUT
Figure 50. Third-Order Intermodulation Distortion Relative to Carrier (IMD3)
vs. POUT per Tone for Various Frequencies, VDD = 2 V, RBIAS = 1.47 kΩ
Figure 53. IMD3 vs. POUT per Tone for Various Frequencies, VDD = 3 V,
RBIAS = 1.47 kΩ
80
70
60
50
40
30
100
80
60
40
20
1GHz
3GHz
6GHz
10GHz
20
0
1GHz
3GHz
10
6GHz
10GHz
0
0
2
4
6
8
10
0
2
4
6
8
10
P
PER TONE (dBm)
P
PER TONE (dBm)
OUT
OUT
Figure 51. IMD3 vs. POUT per Tone for Various Frequencies, VDD = 4 V,
RBIAS = 1.47 kΩ
Figure 54. IMD3 vs. POUT per Tone for Various Frequencies, VDD = 5 V,
RBIAS = 1.47 kΩ
Rev. 0 | Page 14 of 18
Data Sheet
HMC8412
100
80
60
40
20
100
90
80
70
60
50
40
30
1GHz
3GHz
6GHz
10GHz
1GHz
3GHz
6GHz
10GHz
0
0
–14 –12 –10 –8 –6 –4 –2
0
2
4
6
8
10 12
2
4
6
8
10
INPUT POWER (dBm)
P
PER TONE (dBm)
OUT
Figure 55. IMD3 vs. POUT per Tone for Various Frequencies, VDD = 6 V,
RBIAS = 1.47 kΩ
Figure 57. IDD vs. Input Power for Various Frequencies,
VDD = 5 V, RBIAS = 1.47 kΩ
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
–10
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
0
1
2
3
4
5
6
7
8
BIAS RESISTOR VALUE (kΩ)
V
(V)
DD
Figure 56. IDQ vs. VDD, RBIAS = 1.47 kΩ
Figure 58. IDQ vs. Bias Resistor Value, VDD = 5 V
Rev. 0 | Page 15 of 18
HMC8412
Data Sheet
THEORY OF OPERATION
The HMC8412 is a GaAs, MMIC, pHEMT, low noise wideband
amplifier with integrated ac-coupling capacitors and a bias
inductor. A simplified schematic is shown in Figure 59.
components are required. To adjust the drain bias current,
connect an external resistor between the RBIAS and VDD pins.
V
R
DD
BIAS
The HMC8412 has ac-coupled, single-ended input and output
ports with impedances that are nominally equal to 50 Ω over
the 0.4 GHz to 11 GHz frequency range. No external matching
RF
RF
OUT
IN
Figure 59. Simplified Schematic
Rev. 0 | Page 16 of 18
Data Sheet
HMC8412
APPLICATIONS INFORMATION
The basic connections for operating the HMC8412 over the
specified frequency range are shown in Figure 60. No external
biasing inductor is required, allowing the 5 V supply to be
connected to the VDD pin. 0.1 µF and 100 pF power supply
decoupling capacitors are recommended. The power supply
decoupling capacitors shown in Figure 60 represent the
configuration used to characterize and qualify the HMC8412.
It is possible to reduce the number of capacitors, but this varies
from system to system. It is recommended to first remove the
largest capacitors that are farthest from the device when
reducing the number of capacitors.
RECOMMENDED BIAS SEQUENCING
Power-Up Sequence
To power up, follow this bias sequence:
1. Set VDD to 5 V.
2. Apply the RF signal.
Power-Down Sequence
To power down, follow this bias sequence:
1. Turn off the RF signal.
2. Set VDD to 0 V.
To set IDQ, connect a resistor, R1, between the RBIAS and VDD
pins. A default value of 1.47 kΩ is recommended, which results
in a nominal IDQ of 60 mA. Table 8 shows how the IDQ and IDD
varies vs. the bias resistor value. The RBIAS pin also draws a
current that varies with the value of RBIAS (see Table 8). Do not
leave the RBIAS pin open.
Table 8. Recommended Bias Resistor Values
RBIAS (Ω) Total Current (mA)
IDD (mA) RBIAS Current (mA)
670
790
80
75
70
65
60
55
50
45
40
35
30
25
20
77.05
72.29
67.53
62.76
58.04
53.24
48.45
43.67
38.89
34.11
29.38
24.51
19.69
2.95
2.71
2.47
2.24
1.96
1.76
1.55
1.33
1.11
0.89
0.62
0.49
0.31
1000
1170
1470
1730
2100
2600
3300
4300
5900
8500
14000
V
DD
C3
0.1µF
C2
100pF
GND
R1
1.47kΩ
C1
0.1µF
GND
1
6
R
BIAS
2
3
5
4
GND
GND
RF
RF
OUT
IN
Figure 60. Typical Application Circuit
Rev. 0 | Page 17 of 18
HMC8412
Data Sheet
OUTLINE DIMENSIONS
DETAIL A
(JEDEC 95)
1.70
1.60
1.50
2.05
2.00 SQ
1.95
0.65
BSC
5
8
PIN 1 INDEX
1.10
1.00
0.90
AREA
EXPOSED
PAD
PIN 1
IONS
INDICATOR AR EA OP T
4
1
0.30
0.25
0.20
(SEE DETAIL A)
TOP VIEW
SIDE VIEW
BOTTOM VIEW
1.30 REF
0.90
0.85
0.80
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
0.05 MAX
0.02 NOM
COPLANARITY
0.08
SECTION OF THIS DATA SHEET.
0.35
0.30
0.25
SEATING
PLANE
0.203 REF
Figure 61. 6-Lead Lead Frame Chip Scale Package [LFCSP]
2 mm × 2 mm Body and 0.85 mm Package Height
(CP-6-12)
Dimensions shown in millimeters
ORDERING GUIDE
Model1, 2
Temperature Range
MSL Rating3
MSL1
Package Description4
Package Option
HMC8412LP2FE
−40°C to +85°C
6-Lead Lead Frame Chip Scale Package [LFCSP]
6-Lead Lead Frame Chip Scale Package [LFCSP]
Evaluation Board
CP-6-12
CP-6-12
HMC8412LP2FETR −40°C to +85°C
EV1HMC8412LP2F
MSL1
1 The HMC8412LP2FE, HMC8412LP2FETR, and EV1HMC8412LP2F are RoHS compliant parts.
2 When ordering the evaluation board only, reference the model number, EV1HMC8412LP2F.
3 See the Absolute Maximum Ratings section for additional information.
4 The lead finish of the HMC8412LP2FE and HMC8412LP2FETR is nickel palladium gold (NiPdAu).
©2020 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D23882-5/20(0)
Rev. 0 | Page 18 of 18
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