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APT1001 [ADPOW]

Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs; 功率MOS VI是新一代的低栅电荷，高电压的N沟道增强型功率MOSFET的

APT1001


元器件型号：	APT1001
生产厂家：	ADVANCED POWER TECHNOLOGY
描述和应用：	Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs 功率MOS VI是新一代的低栅电荷，高电压的N沟道增强型功率MOSFET的栅
PDF文件：	总2页 (文件大小：38K)
下载文档：	下载PDF数据表文档文件
型号参数：APT1001参数

APT100-101DN

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | CHIP

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33 ETC

APT1001R1AN

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3

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44 ETC

APT1001R1AVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

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35 ADPOW

APT1001R1BN

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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106 ADPOW

APT1001R1BN-BUTT

暂无描述

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0 ADPOW

APT1001R1BN-GULLWING

Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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0 ADPOW

APT1001R1BNR

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-247AD

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33 ETC

APT1001R1BNR-GULLWING

10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

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0 MICROSEMI

APT1001R1BVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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43 ADPOW

APT1001R1DN

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP

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21 ETC

APT1001R1HN

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO

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20 ETC

APT1001R1HVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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32 ADPOW

APT1001R1SN

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB

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12 ETC

APT1001R1SN

10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, D3PAK-3

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0 MICROSEMI

APT1001R2AN

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-3

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18 ETC

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