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元器件品牌
APT1002RBN-GULLWING
[ADPOW]
暂无描述;
元器件型号:
APT1002RBN-GULLWING
生产厂家:
ADVANCED POWER TECHNOLOGY
描述和应用:
暂无描述
晶体 晶体管 功率场效应晶体管 开关 脉冲 高压 局域网 高电压电源
PDF文件:
总4页 (文件大小:54K)
下载文档:
下载PDF数据表文档文件
型号参数:APT1002RBN-GULLWING参数
查看货源
APT1002RBNR
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 7A I(D) | TO-247AD
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ETC
APT1002RBNR-GULLWING
暂无描述
Warning
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156
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1
ADPOW
APT1002RCN
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Warning
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27
ADPOW
APT1002RDN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
Warning
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156
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12
ETC
APT1002RDN
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Warning
: Undefined variable $rtag in
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on line
156
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0
ADPOW
APT10030L2VFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
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32
ADPOW
APT10030L2VFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
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12
ADPOW
APT10030L2VFR_04
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
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15
ADPOW
APT10030L2VFRG
Power Field-Effect Transistor, 33A I(D), 1000V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264MAX, 3 PIN
Warning
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0
MICROSEMI
APT10030L2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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16
ADPOW
APT10030L2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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37
ADPOW
APT10030L2VR_04
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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17
ADPOW
APT10030L2VRG
Power Field-Effect Transistor, 33A I(D), 1000V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264MAX, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MICROSEMI
APT10035B2FLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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13
ADPOW
APT10035B2FLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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44
ADPOW
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