APT10M11JVFR
更新时间：2024-09-18 06:04:50
品牌：ADPOW
描述：High Voltage N-Channel enhancement mode power MOSFET
概述
规格参数
数据手册APT10M11JVFR 概述
High Voltage N-Channel enhancement mode power MOSFET 高电压N沟道增强型功率MOSFET 功率场效应晶体管
APT10M11JVFR 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Transferred |
| 包装说明： | FLANGE MOUNT, R-PUFM-X4 | Reach Compliance Code： | unknown |
| ECCN代码： | EAR99 | 风险等级： | 5.68 |
| Is Samacsys： | N | 其他特性： | AVALANCHE RATED |
| 雪崩能效等级（Eas）： | 2500 mJ | 外壳连接： | ISOLATED |
| 配置： | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压： | 100 V |
| 最大漏极电流 (ID)： | 144 A | 最大漏源导通电阻： | 0.011 Ω |
| FET 技术： | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码： | R-PUFM-X4 |
| 元件数量： | 1 | 端子数量： | 4 |
| 工作模式： | ENHANCEMENT MODE | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | FLANGE MOUNT |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 极性/信道类型： | N-CHANNEL |
| 最大脉冲漏极电流 (IDM)： | 576 A | 认证状态： | Not Qualified |
| 表面贴装： | NO | 端子形式： | UNSPECIFIED |
| 端子位置： | UPPER | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
| Base Number Matches： | 1 |
APT10M11JVFR 数据手册
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PDF下载APT10M11JVFR
100V 144A 0.011Ω
POWER MOS V®
S
S
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
D
G
SOT-227
"UL Recognized"
ISOTOP®
D
• Faster Switching
• Lower Leakage
• Avalanche Energy Rated
• Popular SOT-227 Package
G
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT10M11JVFR
UNIT
VDSS
ID
Drain-Source Voltage
100
144
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
576
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Watts
W/°C
450
PD
3.6
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 150
300
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
144
1
EAR
EAS
50
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
100
144
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms
µA
0.011
250
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
1000
±100
4
IGSS
nA
VGS(th)
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT10M11JVFR
TestConditions
GS = 0V
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
8600 10380
V
Output Capacitance
3200
1180
300
95
4480
1770
450
145
165
32
pF
VDS = 25V
f = 1 MHz
Reverse Transfer Capacitance
3
VGS = 10V
VDD = 0.5 VDSS
Total Gate Charge
Qgs
Qgd
td(on)
tr
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
ID = ID [Cont.] @ 25°C
110
16
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6Ω
48
96
td(off)
tf
Turn-off Delay Time
Fall Time
51
75
9
18
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
144
576
1.3
8
UNIT
Continuous Source Current (Body Diode)
IS
Amps
1
ISM
VSD
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
(VGS = 0V, IS = -ID [Cont.])
Volts
V/ns
dv
5
dv
/
Peak Diode Recovery
/
dt
dt
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
220
420
ns
µC
trr
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
0.8
3.0
10
Qrr
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
IRRM
Amps
18
THERMAL/PACKAGECHARACTERISTICS
Symbol Characteristic
UNIT
MIN
TYP
MAX
RθJC
RθJA
Junction to Case
0.28
40
°C/W
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
2500
Volts
lb•in
VIsolation
Torque Maximum Torque for Device Mounting Screws and Electrical Terminations.
13
1
2
3
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
See MIL-STD-750 Method 3471
4
5
Starting T = +25°C, L = 241µH, R = 25Ω, Peak I = 144A
j
G
L
di
I
≤ -I [Cont.],
/
= 100A/µs, V - V
, T - 150°C, R = 2.0Ω,
DSS j G
S
D
DD
dt
V
= 100V.
R
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.3
D=0.5
0.1
0.05
0.2
0.1
0.05
Note:
0.01
0.02
t
1
0.005
0.01
t
2
SINGLE PULSE
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
J
DM θJC
C
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT10M11JVFR
200
160
120
80
200
160
120
80
V
=7V, 10V & 15V
V
=10 & 15V
GS
GS
7V
6V
6V
5.5V
5V
5.5V
5V
4.5V
4V
4.5V
4V
40
40
0
0
0
V
10
20
30
40
50
0
V
0.5
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
1.0
1.5
2.0
2.5
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
200
160
120
80
1.10
NORMALIZED TO
T
= -55°C
J
V
= 10V @ 0.5 I [Cont.]
GS
D
T
= +25°C
J
1.05
1.00
0.95
0.90
0.85
0.80
V
=10V
GS
T
= +125°C
J
V
> I (ON) x
R
(ON)MAX.
DS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
DS
D
T
= +125°C
= +25°C
J
40
V
=20V
200
GS
T
T
= -55°C
6
J
J
0
0
V
2
4
8
0
50
100
150
250
300
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
150
1.15
120
90
1.10
1.05
1.00
0.95
0.90
60
30
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.00
I
= 0.5 I [Cont.]
D
D
V
= 10V
GS
1.75
1.50
1.25
1.00
0.75
0.50
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT10M11JVFR
600
30,000
100µS
C
C
OPERATION HERE
LIMITED BY R (ON)
oss
DS
iss
C
C
iss
10,000
5,000
100
50
1mS
oss
10mS
C
rss
10
5
100mS
DC
T
T
=+25°C
=+150°C
C
J
1,000
500
SINGLE PULSE
1
1
V
5
10
50
100
.01
V
.1
1
10
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
400
20
16
12
8
I
= 50A
D
V
=20V
T
=+150°C
T =+25°C
J
DS
=50V
J
100
50
V
DS
V
=80V
DS
10
5
4
1
0
0
100
g
200
300
400
500
0
V
0.4
0.8
1.2
1.6
2.0
Q , TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
SOT-227(ISOTOP®)PackageOutline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
Gate
ISOTOP®isaRegisteredTrademarkofSGSThomson.
APT10M11JVFR 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| APT10M11JVR | ADPOW | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | 获取价格 |
|
| APT10M11JVR | MICROSEMI | Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET | 获取价格 |
|
| APT10M11JVRU2 | ADPOW | ISOTOP Boost chopper MOSFET Power Module | 获取价格 |
|
| APT10M11JVRU2 | MICROSEMI | ISOTOP Boost chopper MOSFET Power Module | 获取价格 |
|
| APT10M11JVRU2-Module | MICROCHIP | MOSFETsLow RDSonLow input and Miller capacitanceLow gate chargeAvalanche energy ratedVery ruggedKe | 获取价格 |
|
| APT10M11JVRU3 | ADPOW | ISOTOP Buck chopper MOSFET Power Module | 获取价格 |
|
| APT10M11JVRU3 | MICROSEMI | ISOTOP Buck chopper MOSFET Power Module | 获取价格 |
|
| APT10M11JVRU3-Module | MICROCHIP | MOSFETsLow RDSonLow input and Miller capacitanceLow gate chargeAvalanche energy ratedVery ruggedKe | 获取价格 |
|
| APT10M11LVFR | ADPOW | High Voltage N-Channel enhancement mode power MOSFET | 获取价格 |
|
| APT10M11LVFRG | MICROSEMI | Power Field-Effect Transistor, 100A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | 获取价格 |
|
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