APT40M70LVFRG [ADPOW]
POWER MOS V FREDFET; 功率MOS V FREDFET
| 型号： | APT40M70LVFRG |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | POWER MOS V FREDFET |
| 文件： | 总4页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
400V 57A 0.070Ω
APT40M70B2VFR
APT40M70LVFR
APT40M70B2VFRG* APT40M70LVFRG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
B2VFR
POWER MOS V® FREDFET
T-MAX™
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
TO-264
LVFR
• T-MAX™ or TO-264 Package
• Avalanche Energy Rated
D
S
• Faster Switching
• Lower Leakage
• FAST RECOVERY BODY DIODE
G
MAXIMUMRATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT40M70B2_LVFR(G)
UNIT
VDSS
ID
Drain-Source Voltage
Volts
400
57
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
228
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
520
Watts
W/°C
PD
4.16
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
57
1
EAR
EAS
50
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
2500
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
400
57
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms
µA
0.070
250
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
1000
±100
4
IGSS
nA
VGS(th)
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT40M70B2_LVFR(G)
DYNAMIC CHARACTERISTICS
MIN
TYP
MAX
UNIT
Symbol
Ciss
Coss
Crss
Qg
Characteristic
TestConditions
Input Capacitance
7410
1140
450
330
40
8890
1600
675
495
40
VGS = 0V
VDS = 25V
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
pF
3
VGS = 10V
Total Gate Charge
VDD = 200V
ID = 57A @ 25°C
Qgs
Qgd
td(on)
tr
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
125
16
190
32
VGS = 15V
VDD = 200V
ID = 57A @ 25°C
RG = 0.6Ω
16
32
td(off)
tf
Turn-off Delay Time
Fall Time
55
80
5
10
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
57
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
228
1.3
15
2
(VGS = 0V, IS = -57A)
Volts
V/ns
dv
/
dv
5
Peak Diode Recovery
/
dt
dt
Reverse Recovery Time
(IS = -57A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
250
500
trr
ns
µC
1.6
5.5
15
Reverse Recovery Charge
(IS = -57A, di/dt = 100A/µs)
Qrr
Peak Recovery Current
(IS = -57A, di/dt = 100A/µs)
IRRM
Amps
27
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.24
40
UNIT
Junction to Case
RθJC
RθJA
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
4 Starting Tj = +25°C, L = 1.54mH, RG = 25Ω, Peak IL = 57A
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 57A
/
≤ 700A/µs
V
R ≤400V T ≤ 150°C
J
dt
S
D
3 See MIL-STD-750 Method 3471
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.3
D=0.5
0.1
0.2
0.05
0.1
0.05
Note:
0.01
0.02
t
1
0.005
0.01
t
2
SINGLEPULSE
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
J
DM θJC
C
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT40M70B2_LVFR(G)
100
100
80
60
40
20
0
V
=6V, 7V, 10V & 15V
V
=15V
GS
GS
V
=10V
GS
80
60
40
20
0
V
=6V & 7V
GS
5.5V
5V
5.5V
5V
4.5V
4V
4.5V
4V
0
V
50
100
150
200
0
2
4
6
8
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE2,TYPICALOUTPUTCHARACTERISTICS
FIGURE3,TYPICALOUTPUTCHARACTERISTICS
1.8
100
80
60
40
20
0
T
J
= -55°C
NORMALIZED TO
J
V
= 10V
@
0.5
I
[Cont.]
GS
D
T
J
= +25°C
1.6
1.4
1.2
1.0
0.8
T
= +125°C
V
> I (ON) x
DS
R
(ON)MAX.
DS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
D
V
=10V
GS
V
=20V
GS
T
= +125°C
= +25°C
J
T
T
= -55°C
6
J
J
0
2
4
8
0
40
80
120
160
200
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4,TYPICALTRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
60
1.15
50
40
30
20
10
0
1.10
1.05
1.00
0.95
0.90
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
1.2
2.5
I
= 0.5
I
[Cont.]
D
D
V
= 10V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
APT40M70B2_LVFR(G)
300
30,000
10µS
OPERATIONHERE
LIMITEDBYR (ON)
DS
100µS
100
50
C
iss
10,000
5,000
1mS
C
oss
10
5
10mS
1,000
500
100mS
DC
1
C
rss
T
=+25°C
C
J
T =+150°C
SINGLEPULSE
.5
.1
100
1
V
5
10
50 100
400
.01
V
.1
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
1
10
50
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11,TYPICALCAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
20
16
12
8
200
I
= I [Cont.]
D
D
100
V
=80V
DS
T =+150°C
T =+25°C
J
J
V
=200V
DS
50
V
=320V
DS
10
5
4
0
1
0
100
g
200
300
400
500
600
0
V
0.4
0.8
1.2
1.6
2.0
Q ,TOTALGATECHARGE(nC)
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
SD
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13,TYPICALSOURCE-DRAINDIODEFORWARDVOLTAGE
T-MAXTM (B2) Package Outline (B2VFR)
TO-264 (L) Package Outline (LVFR)
e1
SAC: Tin, Silver, Copper
e1
SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
4.60 (.181)
5.21 (.205)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
Gate
Drain
Source
1.01 (.040)
1.40 (.055)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.21 (.087)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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