APT40M90JN [MICROSEMI]
Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET;
| 型号： | APT40M90JN |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET 局域网 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S
D
S
S
D
G
G
SOT-227
APT40M75JN 400V 56.0A 0.075Ω
APT40M90JN 400V 51.0A 0.090Ω
"UL Recognized" File No. E145592 (S)
ISOTOP®
POWER MOS IV®
SINGLE DIE ISOTOP® PACKAGE
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
APT
APT
Symbol Parameter
40M75JN
40M90JN
UNIT
VDSS
400
56
400
51
Volts
Drain-Source Voltage
ID
Continuous Drain Current @ TC = 25°C
Amps
1
IDM, lLM
VGS
224
204
Pulsed Drain Current
and Inductive Current Clamped
Gate-Source Voltage
±30
Volts
Watts
W/°C
520
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
PD
4.16
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions / Part Number
Symbol
MIN
400
400
56
TYP
MAX
UNIT
APT40M75JN
APT40M90JN
APT40M75JN
APT40M90JN
APT40M75JN
APT40M90JN
Drain-Source Breakdown Voltage
BVDSS
Volts
(VGS = 0V, ID = 250 µA)
2
On State Drain Current
ID(ON)
Amps
Ohms
µA
(VDS > ID(ON) x RDS(ON) Max, VGS = 10V)
51
2
0.075
0.090
250
Drain-Source On-State Resistance
RDS(ON)
(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
IGSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
1000
±100
4
nA
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
THERMAL CHARACTERISTICS
2
Volts
Symbol Characteristic
MIN
TYP
MAX
UNIT
RΘJC
RΘCS
Junction to Case
0.24
°C/W
Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
0.06
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT40M75/40M90JN
Test Conditions
GS = 0V
MIN
TYP
5630
1320
510
241
34
MAX
6800
1950
720
370
50
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
V
Output Capacitance
VDS = 25V
f = 1 MHz
pF
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
Qgs
Qgd
VDD = 0.5 VDSS
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
ID = ID [Cont.] @ 25°C
117
16
180
32
td(on)
tr
VGS = 15V
VDD = 0.5 VDSS
31
62
ID = ID [Cont.] @ 25°C
td(off)
tf
45
70
Turn-off Delay Time
Fall Time
RG = 0.6Ω
13
26
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
56
UNIT
APT40M75JN
APT40M90JN
APT40M75JN
APT40M90JN
Continuous Source Current
IS
(Body Diode)
51
Amps
1
224
204
1.8
740
16
Pulsed Source Current
(Body Diode)
ISM
2
VSD
t rr
Diode Forward Voltage
(VGS = 0V, IS = -ID [Cont.])
Volts
ns
Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)
370
8
Q rr
µC
PACKAGE CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
LD
Internal Drain Inductance (Measured From Drain Terminal to Center of Die.)
Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance (f = 1MHz)
3
5
nH
LS
VIsolation
CIsolation
2500
Volts
pF
35
Torque Maximum Torque for Device Mounting Screws and Electrical Terminations.
13
in-lbs
1
2
3
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
See MIL-STD-750 Method 3471
0.3
D=0.5
0.1
0.2
0.05
0.1
0.05
Note:
0.01
0.02
0.01
t
1
0.005
t
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
SINGLE PULSE
J
DM
θJC
C
0.001
-5
-4
-3
-2
-1
10
10
10
10
10
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT40M75/40M90JN
200
160
120
80
200
160
V
=10 & 15V
GS
9V
V
=15V
GS
10V
9V
8V
7V
8V
120
80
7V
6V
5V
6V
5V
40
0
40
0
0
40
80
120
160
200
0
4
8
12
16
20
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
100
80
60
40
20
0
3.0
2.5
2.0
1.5
1.0
0.0
T
= 25°C
J
T
= -55°C
J
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
> I (ON) x
R (ON)MAX.
DS
250µSEC. PULSE TEST
DS
D
T
J
= +25°C
V
= 10V
@
0.5
I
[Cont.]
D
@ <0.5 % DUTY CYCLE
J
GS
T
= +125°C
V
=10V
GS
V
=20V
GS
T
= +125°C
J
T
= -55°C
J
T
= +25°C
J
0
V
2
4
6
8
10
0
50
100
150
200
250
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
1.2
1.1
1.0
60
50
APT40M75JN
40
APT40M90JN
30
0.9
0.8
0.7
20
10
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.4
2.5
I
= 0.5 I [Cont.]
D
D
V
= 10V
GS
1.2
1.0
0.8
0.6
0.4
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT40M75/40M90JN
20,000
10,000
5,000
500
APT40M75JN
10µS
APT40M90JN
OPERATION HERE
C
iss
100
50
LIMITED BY R (ON)
DS
100µS
APT40M75JN
APT40M90JN
1mS
C
C
oss
10
5
10mS
rss
1,000
500
100mS
DC
1
T
T
=+25°C
=+150°C
C
J
.5
SINGLE PULSE
100
.1
1
5
10
50 100
400
.1
V
.5
1
5
10
50
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
20
I
= I [Cont.]
D
D
V
=80V
DS
=200V
160
120
16
12
8
V
DS
V
=320V
DS
T
T
=+150°C
=+25°C
J
80
40
0
J
4
T
=-55°C
J
0
0
100
g
200
300
400
500
0
0.4
0.8
1.2
1.6
2.0
Q , TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Dimensions in Millimeters and (Inches)
Gate
ISOTOP® is a Registered Trademark of SGS Thomson.
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