APT5010B2LC [ADPOW]
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs; 功率MOS VI是新一代的低栅电荷，高电压的N沟道增强型功率MOSFET的
| 型号： | APT5010B2LC |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs |
| 文件： | 总2页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT5010B2LC
500V 47A 0.100 W
TM
POWER MOS VI
Power MOS VITM is a new generation of low gate charge, high voltage
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achievedby optimizingthemanufacturingprocesstominimizeCiss andCrss.
Lower gate charge coupled with Power MOS VITM optimized gate layout,
delivers exceptionally fast switching speeds.
T-MAX™
D
Lower Gate Charge
Faster Switching
Lower Input Capacitance
Easier To Drive
Avalanche
G
100%
Tested
Popular
S
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
APT5010B2LC
UNIT
Symbol Parameter
VDSS
ID
Drain-Source Voltage
500
47
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
188
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Watts
W/°C
520
PD
4.16
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
47
1
EAR
EAS
50
Repetitive Avalanche Energy
PRELIMINARY
4
2500
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
500
47
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms
µA
0.100
25
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
250
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
EUROPE
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 5792 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 479761
Chemin de Magret
DYNAMIC CHARACTERISTICS
APT5010B2LC
Symbol Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
5120
1030
190
145
26
VGS = 0V
VDS = 25V
f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
Qgs
Qgd
VDD = 0.5 VDSS
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
ID = ID[Cont.] @ 25°C
73
td(on)
tr
td(off)
tf
VGS = 15V
11
V
DD = 0.5 VDSS
12
ID = ID[Cont.] @ 25°C
Turn-off Delay Time
Fall Time
30
RG = 0.6W
6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
UNIT
MIN
TYP
MAX
47
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
t rr
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
188
1.3
2
(VGS = 0V, IS = -ID[Cont.]
)
Volts
ns
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
570
Q rr
11.0
µC
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.24
40
UNIT
RqJC
RqJA
Junction to Case
°C/W
Junction to Ambient
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
Starting T = +25°C, L = 2.26mH, R = 25W, Peak I = 47A
j
G
L
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
PRELIMINARY
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAX Package Outline
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Gate
1.01 (.040)
1.40 (.055)
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
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