APT5010LFLL [ADPOW]

POWER MOS 7 FREDFET; 功率MOS 7 FREDFET

APT5010LFLL


型号：	APT5010LFLL
厂家：	ADVANCED POWER TECHNOLOGY
描述：	POWER MOS 7 FREDFET 功率MOS 7 FREDFET 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总5页 (文件大小：174K)
下载：	下载PDF数据表文档文件

APT5010LFLLG

Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 MICROSEMI

APT5010LFLLG

Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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1 MICROSEMI

APT5010LLC

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

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61 ADPOW

APT5010LLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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46 ADPOW

APT5010LLL

POWER MOS 7 MOSFET

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19 ADPOW

APT5010LLL

Power MOS 7 is a new generation of low loss, high voltage, N-Channel

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16 MICROSEMI

APT5010LLLG

Power MOS 7 is a new generation of low loss, high voltage, N-Channel

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40 MICROSEMI

APT5010LVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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125 ADPOW

APT5010LVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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313 ADPOW

APT5010LVR

Power MOS V is a new generation of high voltage N-Channel enhancement

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30 MICROSEMI

APT5010LVRG

Power MOS V is a new generation of high voltage N-Channel enhancement

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20 MICROSEMI

APT5011AFN

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 49A I(D)

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20 ETC

APT5011DN

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | CHIP

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17 ETC

APT5011JNF

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 46A I(D)

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24 ETC

APT5012

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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41 ADPOW

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