APT5020BLC [ADPOW]
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.; 功率MOS VITM是新一代的低栅电荷，高电压N沟道增强模式功率MOSFET。
| 型号： | APT5020BLC |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
| 文件： | 总2页 (文件大小：38K) |
| 下载： | 下载PDF数据表文档文件 |
APT5020BN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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249
ADPOW
APT5020BN-BUTT
Power Field-Effect Transistor, 28A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
MICROSEMI
APT5020BNF
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 28A I(D) | TO-247ADWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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32
ETC
APT5020BNF-BUTT
Power Field-Effect Transistor, 28A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
ADPOW
APT5020BNF-BUTT
28A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
MICROSEMI
APT5020BNF-GULLWING
28A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
MICROSEMI
APT5020BNFR
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 28A I(D) | TO-247ADWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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30
ETC
APT5020BN-GULLWING
Power Field-Effect Transistor, 28A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
ADPOW
APT5020BN-GULLWING
28A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
MICROSEMI
APT5020BNR
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 28A I(D) | TO-247ADWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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85
ETC
APT5020BNR-BUTT
Power Field-Effect Transistor, 28A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
ADPOW
APT5020BNR-BUTT
28A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
MICROSEMI
APT5020BNR-GULLWING
28A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
MICROSEMI
APT5020BVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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274
ADPOW
APT5020BVFR
Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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2
MICROSEMI
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