APT50GP60B2DF2 [ADPOW]

POWER MOS 7 IGBT; 功率MOS 7 IGBT
APT50GP60B2DF2
型号: APT50GP60B2DF2
厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述:

POWER MOS 7 IGBT
功率MOS 7 IGBT

晶体 晶体管 功率控制 瞄准线 双极性晶体管
文件: 总9页 (文件大小:202K)
下载:  下载PDF数据表文档文件

APT50GP60B2DQ2

POWER MOS 7 IGBT

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21 ADPOW

APT50GP60B2DQ2

POWER MOS 7 IGBT

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15 ADPOW

APT50GP60B2DQ2G

POWER MOS 7 IGBT

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22 ADPOW

APT50GP60B2DQ2G

POWER MOS 7 IGBT

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29 ADPOW

APT50GP60BG

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

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0 MICROSEMI

APT50GP60J

POWER MOS 7 IGBT

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27 ADPOW

APT50GP60J

POWER MOS 7 IGBT

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30 ADPOW

APT50GP60JD2

Insulated Gate Bipolar Transistor, 46A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4

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0 MICROSEMI

APT50GP60JDF2

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4

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0 ADPOW

APT50GP60JDQ2

POWER MOS 7 IGBT

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23 ADPOW

APT50GP60JDQ2

POWER MOS 7 IGBT

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13 ADPOW

APT50GP60JDQ2

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4

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0 MICROSEMI

APT50GP60LDL

Resonant Mode Combi IGBT

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7 MICROSEMI

APT50GP60LDL

Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN

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0 MICROSEMI

APT50GP60LDLG

Resonant Mode Combi IGBT

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13 MICROSEMI