APT50GP60B2DQ2G [ADPOW]
POWER MOS 7 IGBT; 功率MOS 7 IGBT型号: | APT50GP60B2DQ2G |
厂家: | ADVANCED POWER TECHNOLOGY |
描述: | POWER MOS 7 IGBT |
文件: | 总9页 (文件大小:428K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
600V
APT50GP60B2DQ2
APT50GP60B2DQ2G*
®
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
®
(B2)
POWER MOS 7 IGBT
T-Max®
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• SSOA Rated
• Low Gate Charge
C
E
• Ultrafast Tail Current shutoff
G
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Parameter
Symbol
UNIT
APT50GP60B2DQ2(G)
VCES
VGE
IC1
Collector-Emitter Voltage
Gate-Emitter Voltage
600
Volts
±30
150
7
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
IC2
72
Amps
1
Pulsed Collector Current
ICM
190
Switching Safe Operating Area @ TJ = 150°C
190A @ 600V
625
SSOA
PD
Total Power Dissipation
Watts
°C
Operating and Storage Junction Temperature Range
TJ,TSTG
-55 to 150
300
TL
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
Units
V(BR)CES
VGE(TH)
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 525µA)
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
600
3
4.5
2.2
2.1
6
Volts
2.7
VCE(ON)
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)
525
ICES
IGES
µA
nA
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)
3000
±100
Gate-Emitter Leakage Current (VGE = ±20V)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT50GP60B2DQ2(G)
UNIT
Test Conditions
Capacitance
MIN
TYP
5700
465
30
MAX
Cies
Input Capacitance
Coes
pF
V
Output Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Cres
Reverse Transfer Capacitance
VGEP
7.5
Gate-to-Emitter Plateau Voltage
Gate Charge
VGE = 15V
VCE = 300V
IC = 50A
3
Qg
165
40
Total Gate Charge
Qge
nC
Gate-Emitter Charge
Qgc
50
Gate-Collector ("Miller") Charge
TJ = 150°C, RG = 4.3Ω, VGE
=
Switching Safe Operating Area
SSOA
td(on)
A
190
15V, L = 100µH,VCE = 600V
Inductive Switching (25°C)
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
19
36
VCC = 400V
VGE = 15V
IC = 50A
tr
ns
td(off)
85
tf
60
RG = 4.3Ω
TJ = +25°C
4
Eon1
Eon2
Turn-on Switching Energy
465
835
635
19
5
µJ
ns
Turn-on Switching Energy (Diode)
6
Eoff
Turn-off Switching Energy
td(on)
Inductive Switching (125°C)
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
tr
VCC = 400V
VGE = 15V
IC = 50A
36
td(off)
tf
115
85
Current Fall Time
RG = 4.3Ω
TJ = +125°C
4 4
Eon1
Eon2
Eoff
Turn-on Switching Energy
465
1260
1060
55
µJ
Turn-on Switching Energy (Diode)
6
Turn-off Switching Energy
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
UNIT
MIN
TYP
MAX
.20
R
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
θJC
θJC
°C/W
gm
R
.67
WT
6.10
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction temperature.
For Combi devices, Ices includes both IGBT and FRED leakages
See MIL-STD-750 Method 3471.
Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5
Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6
7
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
APT50GP60B2DQ2(G)
70
60
50
40
30
20
10
0
70
60
50
40
TJ = -55°C
TJ = -55°C
TJ = 25°C
TJ = 125°C
30
TJ = 25°C
20
TJ = 125°C
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
CE
CE
FIGURE 1, Output Characteristics(T = 25°C)
FIGURE 2, Output Characteristics (T = 125°C)
J
J
100
16
14
12
250µs PULSE
TEST<0.5 % DUTY
CYCLE
I
T
= 50A
= 25°C
C
90
80
70
60
50
40
30
20
10
0
J
V
= 120V
CE
V
= 300V
CE
10
8
V
= 480V
TJ = -55°C
CE
6
4
TJ = 25°C
TJ = 125°C
2
0
0
1
2
3
4
5
6
7
8
9
10
0
20 40 60 80 100 120 140 160 180
GATE CHARGE (nC)
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
33.5
3
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
= 100A
C
I
= 100A
C
2.5
2
I
= 50A
C
I
= 50A
C
I
= 25A
C
I
= 25A
C
1.5
1
0.5
0
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
6
8
10
12
14
16
-50 -25
0
25
50
75
100 125
V
, GATE-TO-EMITTER VOLTAGE (V)
T , Junction Temperature (°C)
GE
J
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
1.20
200
180
160
140
120
100
1.15
1.10
1.05
1.00
0.95
0.90
80
Lead Temperature
Limited
60
40
20
0
0.85
0.80
-50 -25
0
25
50
75
100 125
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
APT50GP60B2DQ2(G)
140
120
100
80
25
20
15
10
5
V
= 15V
GE
VGE =15V,TJ=125°C
60
VGE =15V,TJ=25°C
40
VCE = 400V
VCE = 400V
RG = 4.3Ω
L = 100µH
TJ = 25°C or 125°C
RG = 4.3Ω
20
L = 100µH
0
I
0
I
20 30 40 50 60 70 80 90 100 110
, COLLECTOR TO EMITTER CURRENT (A)
20 30 40 50 60 70 80 90 100 110
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
90
120
R
G = 4.3Ω, L = 100µH, VCE = 400V
R
G = 4.3Ω, L = 100µH, VCE = 400V
80
70
60
50
40
30
20
10
T
J = 125°C, VGE = 15V
100
80
60
40
20
T
J = 25°C, VGE = 15V
TJ = 25 or 125°C,VGE = 15V
0
I
0
I
20 30 40 50 60 70 80 90 100 110
20 30 40 50 60 70 80 90 100 110
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
3500
3000
2500
2000
1500
1000
500
4000
3500
3000
2500
2000
1500
1000
500
V
V
R
=
=
400V
+15V
V
V
R
=
=
400V
+15V
CE
GE
CE
GE
T
J = 125°C
= 4.3Ω
= 4.3Ω
G
G
T
J = 125°C
T
J = 25°C
T
J = 25°C
0
0
20 30 40 50 60 70 80 90 100 110
, COLLECTOR TO EMITTER CURRENT (A)
20 30 40 50 60 70 80 90 100 110
I , COLLECTOR TO EMITTER CURRENT (A)
CE
I
CE
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
6000
4000
V
V
T
=
=
400V
+15V
V
V
R
=
=
400V
+15V
CE
GE
CE
GE
= 125°C
3500
3000
2500
2000
1500
1000
500
= 4.3Ω
J
G
5000
4000
3000
2000
E
100A
on2,
E
100A
on2,
E
100A
off,
E
100A
off,
E
50A
E
50A
25A
on2,
on2,
E
50A
25A
E
50A
off,
off,
1000
0
E
25A
on2,
E
on2,
E
E
25A
off,
off,
0
0
10
20
30
40
50
0
25
50
75
100
125
R , GATE RESISTANCE (OHMS)
T , JUNCTION TEMPERATURE (°C)
G
J
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT50GP60B2DQ2(G)
10,000
200
180
160
140
120
100
80
Cies
1,000
500
Coes
100
50
60
Cres
40
20
0
10
0
10
20
30
40
50
0 100 200 300 400 500 600 700
V , COLLECTOR TO EMITTER VOLTAGE
CE
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
CE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0.20
D = 0.9
0.16
0.7
0.12
0.5
Note:
0.08
0.3
t
1
SINGLE PULSE
t
2
0.04
0
t
0.1
1
t
Duty Factor D =
Peak T = P x Z
/
2
+ T
C
0.05
J
DM
θJC
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
220
RC MODEL
Junction
temp. (°C)
100
0.00908
0.0193
0.0658
0.00463
0.00218
0.0142
Fmax = min (fmax, fmax2
)
50
0.05
fmax1
=
=
td(on) + tr + td(off) + tf
Power
(watts)
Pdiss - Pcond
Eon2 + Eoff
fmax2
Pdiss
T
T
=
125°C
75°C
J
=
C
D = 50 %
V
R
TJ - TC
RθJC
=
667V
=
CE
0.0142
0.0658
= 5Ω
G
10
10 20 30 40 50 60 70 80 90 100
Case temperature. (°C)
I , COLLECTOR CURRENT (A)
C
Figure 20, Operating Frequency vs Collector Current
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
APT50GP60B2DQ2(G)
APT40DQ60
10%
Gate Voltage
TJ = 125 °C
td(on)
VCE
IC
VCC
Collector Current
Collector Voltage
t
r
90%
10%
A
5%
5 %
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage
T
TJ = 125 °C
td(off)
tf
Collector Voltage
90%
0
10%
Switching Energy
Collector Current
Figure 23, Turn-off Switching Waveforms and Definitions
TYPICAL PERFORMANCE CURVES
APT50GP60B2DQ2(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Symbol
IF(AV)
Characteristic / Test Conditions
APT50GP60B2DQ2(G)
UNIT
Maximum Average Forward Current (TC = 111°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
40
63
IF(RMS)
Amps
IFSM
320
STATIC ELECTRICAL CHARACTERISTICS
Symbol
UNIT
Characteristic / Test Conditions
MIN
TYP
MAX
MAX
IF = 50A
2.14
2.67
1.80
Volts
Forward Voltage
IF = 100A
VF
IF = 50A, TJ = 125°C
DYNAMIC CHARACTERISTICS
Characteristic
Symbol
MIN
TYP
UNIT
Test Conditions
Reverse Recovery Time
trr
trr
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
-
22
25
ns
Reverse Recovery Time
Reverse Recovery Charge
-
IF = 40A, diF/dt = -200A/µs
VR = 400V, TC = 25°C
Qrr
IRRM
trr
nC
Amps
ns
-
-
-
-
-
-
-
-
35
3
Maximum Reverse Recovery Current
Reverse Recovery Time
-
-
160
480
6
IF = 40A, diF/dt = -200A/µs
VR = 400V, TC = 125°C
Qrr
Reverse Recovery Charge
nC
Amps
ns
IRRM
trr
Maximum Reverse Recovery Current
Reverse Recovery Time
85
920
20
IF = 40A, diF/dt = -1000A/µs
VR = 400V, TC = 125°C
Qrr
Reverse Recovery Charge
nC
IRRM
Maximum Reverse Recovery Current
Amps
0.70
D = 0.9
0.7
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
Note:
t
1
0.3
0.1
t
2
t
1
t
/
2
Duty Factor D =
Peak T = P
x Z
+ T
θJC C
SINGLE PULSE
10-3
J
DM
0.05
10-5
10-4
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL
Junction
temp(°C)
0.289
0.381
0.00448
0.120
Power
(watts)
Case temperature(°C)
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
APT50GP60B2DQ2(G)
120
100
80
60
40
20
0
180
160
140
120
100
80
T
V
= 125°C
= 400V
J
R
80A
40A
20A
T
= 125°C
J
60
T
= 175°C
40
T
= 25°C
J
J
20
T
= -55°C
J
0
0
0.5
1
1.5
2
2.5
3
0
200
400
600
800 1000 1200
-di /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 26. Reverse Recovery Time vs. Current Rate of Change
V , ANODE-TO-CATHODE VOLTAGE (V)
F
F
Figure 25. Forward Current vs. Forward Voltage
25
1400
1200
1000
800
600
400
200
0
T
V
= 125°C
= 400V
T
V
= 125°C
= 400V
J
J
R
R
80A
40A
20
15
10
5
80A
40A
20A
20A
0
0
200
400
600
800 1000 1200
0
200
400
600
800 1000 1200
-di /dt, CURRENT RATE OF CHANGE (A/µs)
-di /dt, CURRENT RATE OF CHANGE (A/µs)
F
F
Figure 27. Reverse Recovery Charge vs. Current Rate of Change
Figure 28. Reverse Recovery Current vs. Current Rate of Change
1.4
80
Duty cycle = 0.5
T
= 175°C
J
70
60
50
40
30
20
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Q
rr
t
rr
I
RRM
t
rr
Q
rr
10
0
0
25
50
75
100
125
150
25
50
75
Case Temperature (°C)
Figure 30. Maximum Average Forward Current vs. CaseTemperature
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
J
Figure 29. Dynamic Parameters vs. Junction Temperature
200
180
160
140
120
100
80
60
40
20
0
1
10
100 200
V , REVERSE VOLTAGE (V)
R
Figure 31. Junction Capacitance vs. Reverse Voltage
TYPICAL PERFORMANCE CURVES
APT50GP60B2DQ2(G)
V
r
diF/dt Adjust
+18V
0V
APT40GT60BR
D.U.T.
t
Q
/
30µH
rr rr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 32. Diode Test Circuit
1
2
IF - Forward Conduction Current
1
4
5
diF/dt - Rate of Diode Current Change Through Zero Crossing.
IRRM - Maximum Reverse Recovery Current.
Zero
3
4
0.25 I
RRM
t
- Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
3
rr
2
line through IRRM and 0.25 IRRM passes through zero.
5
Q
- Area Under the Curve Defined by IRRM and t .
rr
rr
Figure 33, Diode Reverse Recovery Waveform and Definitions
®
T-MAX (B2) Package Outline
e1
SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Collector
(Cathode)
Emitter
(Anode)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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