APT50GT120JU3 [ADPOW]
ISOTOP Buck chopper Trench IGBT; ISOTOP降压斩波沟道IGBT
| 型号： | APT50GT120JU3 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | ISOTOP Buck chopper Trench IGBT |
| 文件： | 总7页 (文件大小：609K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT50GT120JU3
ISOTOP® Buck chopper
Trench IGBT
VCES = 1200V
IC = 50A @ Tc = 80°C
C
Application
Sꢀ AC and DC motor control
Sꢀ Switched Mode Power Supplies
G
Features
Sꢀ Trench + Field Stop IGBT® Technology
E
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
A
Sꢀ ISOTOP® Package (SOT-227)
Sꢀ Very low stray inductance
Sꢀ High level of integration
A
E
Benefits
Sꢀ Low conduction losses
Sꢀ Stable temperature behavior
Sꢀ Very rugged
C
G
Sꢀ Direct mounting to heatsink (isolated package)
Sꢀ Low junction to case thermal resistance
Sꢀ Easy paralleling due to positive TC of VCEsat
ꢀ
ISOTOP
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
IC1
Collector - Emitter Breakdown Voltage
Continuous Collector Current
1200
75
V
TC = 25°C
TC = 80°C
TC = 25°C
A
IC2
50
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
100
±20
347
V
W
Maximum Power Dissipation
TC = 25°C
IFAV
IFRMS
Maximum Average Forward Current
RMS Forward Current (Square wave, 50% duty)
Duty cycle=0.5 TC = 80°C
27
34
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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APT website – http://www.advancedpower.com
APT50GT120JU3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
VGE = 0V, IC = 3mA
VGE = 0V, VCE = 1200V
Min Typ Max Unit
1200
BVCES Collector - Emitter Breakdown Voltage
V
ICES
Zero Gate Voltage Collector Current
5
mA
Tj = 25°C
Tj = 125°C
1.4
1.7
2.0
2.1
VGE =15V
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
V
IC = 50A
VGE = VCE, IC = 2mA
5.0
6.5
500
V
nA
IGES
Gate – Emitter Leakage Current
VGE = ±20V, VCE = 0V
Dynamic Characteristics
Symbol Characteristic
Test Conditions
VGE = 0V
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
3600
VCE = 25V
f = 1MHz
pF
Output Capacitance
188
163
85
Reverse Transfer Capacitance
Turn-on Delay Time
Resistive Switching (25°C)
VGE = 15V
Td(on)
Tr
Rise Time
30
420
65
ns
VBus = 600V
Td(off) Turn-off Delay Time
IC = 50A
Tf
Td(on)
Tr
Fall Time
Turn-on Delay Time
Rise Time
RG = 18ꢁ
Inductive Switching (125°C)
VGE = 15V
90
45
520
90
ns
VBus = 600V
Td(off) Turn-off Delay Time
IC = 50A
Tf
Eon
Eoff
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
RG = 18ꢁ
6.6
5.8
mJ
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APT website – http://www.advancedpower.com
APT50GT120JU3
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
IF = 30A
Min Typ Max Unit
2.0
2.3
1.8
2.5
VF
Diode Forward Voltage
V
IF = 60A
IF = 30A
Tj = 125°C
Tj = 25°C
Tj = 125°C
VR = 1200V
VR = 1200V
VR = 200V
250
500
IRM
CT
Maximum Reverse Leakage Current
Junction Capacitance
µA
pF
32
31
IF=1A,VR=30V
di/dt =100A/µs
Reverse Recovery Time
Tj = 25°C
trr
ns
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
370
500
5
Reverse Recovery Time
IF = 30A
IRRM
Qrr
Maximum Reverse Recovery Current
A
VR = 800V
di/dt =200A/µs
12
660
3450
Reverse Recovery Charge
nC
Tj = 125°C
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
220
4650
37
ns
nC
A
IF = 30A
VR = 800V
di/dt =1000A/µs
Tj = 125°C
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.36
RthJC
Junction to Case
°C/W
1.1
20
RthJA
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
VISOL
2500
-55
V
TJ,TSTG Storage Temperature Range
150
300
1.5
°C
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
N.m
g
Wt
Package Weight
29.2
Typical IGBT Performance Curve
Operating Frequency vs Collector Current
60
VCE=600V
50
D=50%
RG=18 Ω
TJ=125°C
40
30
20
10
0
0
10 20 30 40 50 60 70 80
IC (A)
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APT website – http://www.advancedpower.com
APT50GT120JU3
Output Characteristics (VGE=15V)
Output Characteristics
100
75
50
25
0
100
75
50
25
0
TJ = 125°C
TJ=25°C
VGE=17V
VGE=13V
VGE=15V
VGE=9V
TJ=125°C
0
1
2
3
4
0
1
2
VCE (V)
3
4
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
100
75
50
25
0
20
16
12
8
VCE = 600V
Eon
TJ=25°C
V
GE = 15V
TJ=125°C
R
G = 18 Ω
TJ = 125°C
Eoff
4
0
0
25
50
75
100
5
6
7
8
9
10
11
12
I
C (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Safe Operating Area
12
120
100
80
60
40
20
0
Eon
VCE = 600V
10
8
V
GE =15V
C = 50A
I
TJ = 125°C
Eoff
6
4
VGE=15V
TJ=125°C
2
RG=18 Ω
0
5
10
15
20
25
30
0
400
800
CE (V)
1200
1600
V
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.4
IGBT
0.35
0.3
0.9
0.7
0.25
0.2
0.5
0.3
0.15
0.1
0.1
0.05
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 7
APT website – http://www.advancedpower.com
APT50GT120JU3
Typical Diode Performance Curve
5 - 7
APT website – http://www.advancedpower.com
APT50GT120JU3
6 - 7
APT website – http://www.advancedpower.com
APT50GT120JU3
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
r = 4.0 (.157)
(2 places)
25.4 (1.000)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
Collector
Anode
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
Emitter
Dimensions in Millimeters and (Inches)
Gate
ISOTOP® is a Registered Trademark of SGS Thomson
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APT website – http://www.advancedpower.com
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Insulated Gate Bipolar Transistor, 106A I(C), 1200V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN
MICROSEMI
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