APT50M60L2VFR [ADPOW]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.; 功率MOS V是新一代高压N沟道增强型功率MOSFET 。
| 型号： | APT50M60L2VFR |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| 文件： | 总2页 (文件大小：83K) |
| 下载： | 下载PDF数据表文档文件 |
APT50M60L2VFR_04
POWER MOS V㈢ FREDFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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MICROSEMI
APT50M60L2VFRG
Power Field-Effect Transistor, 77A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
MICROSEMI
APT50M60L2VR
POWER MOS V㈢ MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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MICROSEMI
APT50M60L2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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ADPOW
APT50M60L2VR_04
POWER MOS V㈢ MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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MICROSEMI
APT50M60L2VRG
Power Field-Effect Transistor, 77A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
MICROSEMI
APT50M65
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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8
ADPOW
APT50M65
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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20
ADPOW
APT50M65
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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ADPOW
APT50M65B2FLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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41
ADPOW
APT50M65B2FLL
POWER MOS 7 R FREDFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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ADPOW
APT50M65B2FLL_03
POWER MOS 7 R FREDFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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16
ADPOW
APT50M65B2FLLG
Power Field-Effect Transistor, 67A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, B2, TMAX-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
MICROSEMI
APT50M65B2LL
POWER MOS 7 R MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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23
ADPOW
APT50M65B2LL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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28
ADPOW
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