APT50M75JLLU3 [ADPOW]
ISOTOP Buck chopper MOSFET Power Module; ISOTOP降压斩波MOSFET功率模块
| 型号： | APT50M75JLLU3 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | ISOTOP Buck chopper MOSFET Power Module |
| 文件： | 总8页 (文件大小：495K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT50M75JLLU3
VDSS = 500V
ISOTOP® Buck chopper
RDSon = 75mꢀ max @ Tj = 25°C
MOSFET Power Module
ID = 51A @ Tc = 25°C
D
Application
Sꢁ AC and DC motor control
Sꢁ Switched Mode Power Supplies
Features
G
Sꢁ Power MOS 7® MOSFETs
-
-
-
-
-
-
Low RDSon
S
Low input and Miller capacitance
Low gate charge
Fast intrinsic reverse diode
Avalanche energy rated
Very rugged
Sꢁ ISOTOP® Package (SOT-227)
Sꢁ Very low stray inductance
Sꢁ High level of integration
A
A
Benefits
S
Sꢁ Outstanding performance at high frequency operation
Sꢁ Direct mounting to heatsink (isolated package)
Sꢁ Low junction to case thermal resistance
Sꢁ Very rugged
D
G
Sꢁ Low profile
ꢀ
ISOTOP
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
ID
Drain - Source Breakdown Voltage
Continuous Drain Current
500
51
V
Tc = 25°C
Tc = 80°C
A
39
IDM
VGS
Pulsed Drain current
204
±30
75
Gate - Source Voltage
Drain - Source ON Resistance
V
mꢀ
W
RDSon
PD
Maximum Power Dissipation
Tc = 25°C
Tc = 80°C
290
IAR
Avalanche current (repetitive and non repetitive)
51
50
A
EAR
Repetitive Avalanche Energy
mJ
EAS
IFAV
IFRMS
Single Pulse Avalanche Energy
2500
30
Maximum Average Forward Current
Duty cycle=0.5
A
RMS Forward Current (Square wave, 50% duty)
39
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 – 8
APT website – http://www.advancedpower.com
APT50M75JLLU3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 250µA
500
3
V
VGS = 0V,VDS = 500V Tj = 25°C
VGS = 0V,VDS = 400V Tj = 125°C
100
500
75
IDSS
Zero Gate Voltage Drain Current
µA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
V
GS = 10V, ID = 25.5A
mꢀ
V
VGS = VDS, ID = 1mA
5
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±100 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
5590
VGS = 0V
VDS = 25V
f = 1MHz
pF
Output Capacitance
1180
85
Reverse Transfer Capacitance
Qg
Qgs
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
123
33
65
10
20
21
5
VGS = 10V
VBus = 250V
ID = 51A
nC
Qgd
Td(on)
Tr
Resistive Switching
V
GS = 15V
VBus = 250V
ID = 51A
ns
Td(off) Turn-off Delay Time
Tf
RG = 0.6ꢀ
Fall Time
Inductive switching @ 25°C
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy ꢀ
Turn-off Switching Energy ꢀ
Turn-on Switching Energy ꢀ
Turn-off Switching Energy ꢀ
755
726
V
GS = 15V, VBus = 330V
µJ
µJ
ID = 51A, RG = 5Ω
Inductive switching @ 125°C
1241
846
V
GS = 15V, VBus = 330V
ID = 51A, RG = 5Ω
ꢁ Eon includes diode reverse recovery
ꢀ In accordance with JEDEC standard JESD24-1.
2 – 8
APT website – http://www.advancedpower.com
APT50M75JLLU3
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
IF = 30A
Min Typ Max Unit
1.6
1.9
1.4
1.8
VF
Diode Forward Voltage
V
IF = 60A
IF = 30A
Tj = 125°C
Tj = 25°C
Tj = 125°C
VR = 600V
VR = 600V
VR = 200V
250
500
IRM
CT
Maximum Reverse Leakage Current
Junction Capacitance
µA
pF
44
23
IF=1A,VR=30V
Reverse Recovery Time
Tj = 25°C
di/dt =100A/µs
trr
ns
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
85
160
4
Reverse Recovery Time
IF = 30A
IRRM
Qrr
Maximum Reverse Recovery Current
A
VR = 400V
di/dt =200A/µs
8
130
700
Reverse Recovery Charge
nC
Tj = 125°C
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
70
1300
30
ns
nC
A
IF = 30A
VR = 400V
di/dt =1000A/µs
Tj = 125°C
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
MOSFET
Diode
0.27
RthJC
Junction to Case
°C/W
1.21
20
RthJA
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
VISOL
2500
-55
V
TJ,TSTG Storage Temperature Range
150
300
1.5
°C
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
N.m
g
Wt
Package Weight
29.2
Typical MOSFET Performance Curve
3 – 8
APT website – http://www.advancedpower.com
APT50M75JLLU3
4 – 8
APT website – http://www.advancedpower.com
APT50M75JLLU3
5 – 8
APT website – http://www.advancedpower.com
APT50M75JLLU3
Typical Diode Performance Curve
6 – 8
APT website – http://www.advancedpower.com
APT50M75JLLU3
7 – 8
APT website – http://www.advancedpower.com
APT50M75JLLU3
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
r = 4.0 (.157)
(2 places)
25.4 (1.000)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
Drain
Anode
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
Source
Dimensions in Millimeters and (Inches)
Gate
ISOTOP® is a Registered Trademark of SGS Thomson
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
8 – 8
APT website – http://www.advancedpower.com
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