APT5513B2FLL [ADPOW]
POWER MOS 7 FREDFET; 功率MOS 7 FREDFET
| 型号： | APT5513B2FLL |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | POWER MOS 7 FREDFET |
| 文件： | 总5页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT5513B2FLL
APT5513LFLL
550V 41A 0.130Ω
R
B2FLL
POWER MOS 7 FREDFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
T-MAX™
TO-264
LFLL
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
D
S
G
• Popular T-MAX™ or TO-264 Package
•
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT5513
550
UNIT
VDSS
ID
Drain-Source Voltage
Volts
Continuous Drain Current @ TC = 25°C
41
Amps
Volts
1
IDM
Pulsed Drain Current
164
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
500
Watts
W/°C
PD
4.0
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 150
300
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
41
1
EAR
EAS
35
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
1600
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
550
41
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 20.5A)
Ohms
µA
0.130
250
Zero Gate Voltage Drain Current (VDS = 550V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 440V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
IDSS
1000
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT5513B2FLL - LFLL
DYNAMIC CHARACTERISTICS
Symbol
MIN
TYP
MAX
Characteristic
UNIT
TestConditions
Ciss
V
= 0V
Input Capacitance
4268
838
60
GS
V
= 25V
Coss
Crss
Qg
pF
Output Capacitance
DS
f = 1 MHz
Reverse Transfer Capacitance
3
V
= 10V
Total Gate Charge
98
GS
V
= 275V
Qgs
Qgd
td(on)
tr
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
DD
25
I
= 41A @ 25°C
D
55
RESISTIVESWITCHING
14
V
= 15V
GS
11
V
= 275V
DD
td(off)
30
Turn-off Delay Time
Fall Time
I
= 41A @ 25°C
D
tf
R
= 0.6Ω
5
G
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
517
431
796
501
Turn-on Switching Energy
V
= 367V, V = 15V
GS
DD
I
Turn-off Switching Energy
= 41A, R = 5Ω
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Eon
Eoff
Turn-on Switching Energy
V
= 367V V = 15V
GS
DD
Turn-off Switching Energy
I
= 41A, R = 5Ω
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
41
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
164
1.3
15
2
Volts
V/ns
(VGS = 0V, IS = -41A)
dv
/
dv
5
Peak Diode Recovery
/
dt
dt
Reverse Recovery Time
(IS = -41A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
250
500
trr
ns
µC
Reverse Recovery Charge
(IS = -41A, di/dt = 100A/µs)
2.16
5.57
15.5
22.4
Qrr
Peak Recovery Current
(IS = -41A, di/dt = 100A/µs)
IRRM
Amps
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.25
40
UNIT
Junction to Case
RθJC
RθJA
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
4 Starting T = +25°C, L = 1.90mH, R = 25Ω, Peak I = 41A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
device itself.
I
≤ -I 41A
/
≤ 700A/µs
VR ≤ V
T ≤ 150°C
J
dt
S
D
DSS
6
Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.30
0.25
0.9
0.20
0.7
0.15
0.10
0.5
0.3
Note:
t
1
t
2
0.1
t
1
Duty Factor D =
/
t
2
0.05
0.05
0
SINGLEPULSE
Peak T = P
x Z + T
J
DM
θJC C
10-5
10-4
10-3
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
10-2
10-1
1.0
Typical Performance Curves
APT5513B2FLL-LFLL
120
100
80
V
=15 & 10V
RC MODEL
GS
Junction
temp. ( ”C)
7.5V
7V
0.0526
0.000456F
0.0121F
0.338F
6.5V
6V
60
Power
0.107
(Watts)
40
20
0
5.5V
5V
0.0898
Case temperature
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
120
1.40
NORMALIZED TO
V
> I (ON) x
DS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
(ON)MAX.
DS
D
V
= 10V
@
20.5A
GS
100
80
1.30
1.20
1.10
1.00
V
=10V
60
GS
40
20
0
V
=20V
GS
T
= +125°C
= +25°C
J
T
= -55°C
J
0.90
0.80
T
J
0
2
4
6
8
10
0
20
40
60
80
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
45
40
35
30
25
20
15
10
5
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 20.5A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
0.7
0.6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
APT5513B2FLL-LFLL
165
100
20,000
10,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
iss
1,000
100
10
C
oss
10
100µS
C
rss
T
=+25°C
C
1mS
T =+150°C
J
SINGLEPULSE
10mS
1
1
10
100
550
0
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
16
200
I
= 41A
D
100
12
V
=110V
DS
T =+150°C
J
V
=275V
DS
T =+25°C
J
V
=440V
DS
8
10
4
0
1
0
40
80
120
160
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q ,TOTALGATECHARGE(nC)
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
100
80
V
= 367V
DD
= 5Ω
R
T
G
t
= 125°C
t
80
60
40
d(off)
J
f
60
40
L = 100µH
V
= 367V
DD
= 5Ω
R
T
G
= 125°C
J
L = 100µH
20
0
20
0
t
r
t
d(on)
5
15
25
35
(A)
45
55
65
5
15
25
35
(A)
45
55
65
I
I
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
1600
1200
V
= 367V
DD
= 5Ω
R
T
G
= 125°C
2000
J
E
E
off
L = 100µH
on
EON includes
diode reverse recovery.
1500
1000
500
0
800
400
0
E
on
V
I
= 367V
DD
= 41A
D
T
= 125°C
J
L = 100µH
E
off
EON includes
diode reverse recovery.
5
15
25
35
(A)
45
55
65
0
5
10 15 20 25 30 35 40 45 50
I
D
R ,GATERESISTANCE(Ohms)
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT5513B2FLL-LFLL
Gate Voltage
10 %
90%
Gate Voltage
T
= 125 C
T
= 125 C
J
J
t
d(off)
t
d(on)
Drain Voltage
Drain Current
90%
Drain Current
Drain Voltage
90%
t
r
t
f
10%
0
5 %
5 %
10 %
Switching Energy
Switching Energy
Figure19,Turn-offSwitchingWaveformsandDefinitions
Figure18,Turn-onSwitchingWaveformsandDefinitions
APT30DF60B
VCE
IC
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2)PackageOutline
TO-264(L)PackageOutline
4.69 (.185)
4.60 (.181)
5.31 (.209)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Gate
1.01 (.040)
1.40 (.055)
Drain
Source
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
相关型号：
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Power Field-Effect Transistor, 31A I(D), 550V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
MICROSEMI
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