APT6010B2LL [ADPOW]

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.; 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。


型号：	APT6010B2LL
厂家：	ADVANCED POWER TECHNOLOGY
描述：	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。晶体晶体管功率场效应晶体管开关脉冲
文件：	总2页 (文件大小：73K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

APT6010B2LL

APT6010LLL

600V 54A 0.100W

B2LL

POWER MOS 7

Power MOS 7^TMis a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7^TMby significantly lowering R_DS(ON)

and Q_g. Power MOS 7^TMcombines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

T-MAX™

TO-264

LLL

• Lower Input Capacitance

• Increased Power Dissipation

• Lower Miller Capacitance • Easier To Drive

• Lower Gate Charge, Qg

MAXIMUM RATINGS

Symbol Parameter

• Popular T-MAX™ or TO-264 Package

All Ratings: T = 25°C unless otherwise specified.

APT6010

600

UNIT

V_DSS

I_D

Drain-Source Voltage

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

216

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

690

Watts

W/°C

P_D

5.52

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

3000

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

600

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 0.5 I_D[Cont.])

Ohms

µA

0.100

100

500

±100

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 2.5mA)

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street

Chemin de Magret

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

EUROPE

DYNAMIC CHARACTERISTICS

Symbol Characteristic

APT6010 B2LL - LLL

MIN

TYP

MAX

UNIT

Test Conditions

C_iss

C_oss

C_rss

Q_g

Input Capacitance

6795

1260

V_GS= 0V

V_DS= 25V

f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

V_GS= 10V

Total Gate Charge

153

V_DD= 0.5 V_DSS

Q_gs

Q_gd

t_d(on)

t_r

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

I_D= I_D[Cont.]@ 25°C

V_GS= 15V

V_DD= 0.5 V_DSS

I_D= I_D[Cont.]@ 25°C

R_G= 0.6W

t_d(off)

t_f

Turn-off Delay Time

Fall Time

9.2

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I_S

MIN

TYP

MAX

Characteristic / Test Conditions

UNIT

Continuous Source Current (Body Diode)

Amps

I_SM

216

1.3

Pulsed Source Current

Diode Forward Voltage

(Body Diode)

V_SD

t _rr

(V_GS= 0V, I_S= -I_D[Cont.]

)

Volts

Reverse Recovery Time (I_S= -I_D[Cont.], dl_S/dt = 100A/µs)

770

Q _rr

Reverse Recovery Charge (I_S= -I_D[Cont.], dl_S/dt = 100A/µs)

17.5

µC

Peak Diode Recovery ^dv

V/ns

THERMAL CHARACTERISTICS

Symbol Characteristic

MIN

TYP

MAX

0.18

UNIT

R_qJC

R_qJA

Junction to Case

°C/W

Junction to Ambient

Repetitive Rating: Pulse width limited by maximum junction

temperature.

Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

See MIL-STD-750 Method 3471

Starting T = +25°C, L = 2.05mH, R = 25W, Peak I = 54A

numbers reflect the limitations of the test circuit rather than the

device itself.

_S£ -I

£ 700A/µs

V_R£ V

T £ 150°C

D Cont.

[

DSS

]

APT Reserves the right to change, without notice, the specifications and information contained herein.

T-MAX^TM(B2) Package Outline

TO-264 (L) Package Outline

4.69 (.185)

4.60 (.181)

5.31 (.209)

15.49 (.610)

16.26 (.640)

5.21 (.205)

19.51 (.768)

20.50 (.807)

1.49 (.059)

2.49 (.098)

1.80 (.071)

2.01 (.079)

3.10 (.122)

3.48 (.137)

5.38 (.212)

6.20 (.244)

5.79 (.228)

6.20 (.244)

20.80 (.819)

21.46 (.845)

25.48 (1.003)

26.49 (1.043)

2.87 (.113)

3.12 (.123)

4.50 (.177) Max.

2.29 (.090)

2.69 (.106)

2.29 (.090)

2.69 (.106)

1.65 (.065)

2.13 (.084)

0.40 (.016)

0.79 (.031)

19.81 (.780)

20.32 (.800)

19.81 (.780)

21.39 (.842)

Gate

1.01 (.040)

1.40 (.055)

Drain

Source

Drain

Source

0.48 (.019)

0.84 (.033)

2.59 (.102)

3.00 (.118)

0.76 (.030)

1.30 (.051)

2.79 (.110)

3.18 (.125)

2.21 (.087)

2.59 (.102)

5.45 (.215) BSC

2-Plcs.

5.45 (.215) BSC

2-Plcs.

These dimensions are equal to the TO-247 without the mounting hole.

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810

5,256,583

5,045,903

4,748,103

5,089,434

5,283,202

5,182,234

5,231,474

5,019,522 5,262,336

5,434,095 5,528,058

相关型号：