APT6035BN [ADPOW]

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET


型号：	APT6035BN
厂家：	ADVANCED POWER TECHNOLOGY
描述：	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N沟道增强型高压功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲高压局域网高电压电源
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TO-247

APT6035BN 600V 19.0A 0.35Ω

POWER MOS IV^®

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise specified.

Symbol Parameter

APT6035BN

600

UNIT

V_DSS

Volts

Drain-Source Voltage

I_D

Continuous Drain Current @ T_C= 25°C

Amps

I_DM

V_GS

Pulsed Drain Current

Gate-Source Voltage

±30

Volts

Watts

W/°C

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

310

P_D

2.5

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

-55 to 150

300

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

UNIT

MIN

TYP

MAX

BV_DSS

I_D(ON)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

Amps

Ohms

600

On State Drain Current (V_DS> I_D(ON) x R_DS(ON) Max, V_GS= 10V)

R_DS(ON)

Drain-Source On-State Resistance (V_GS= 10V, 0.5 I_D[Cont.])

0.35

250

1000

±100

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1.0mA)

I_DSS

µA

I_GSS

V_GS(TH)

Volts

THERMAL CHARACTERISTICS

Symbol Characteristic

MIN

TYP

MAX

0.40

UNIT

R_θJC

R_θJA

Junction to Case

°C/W

Junction to Ambient

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street

EUROPE

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord

APT6035BN

DYNAMIC CHARACTERISTICS

Symbol Characteristic

Test Conditions

MIN

TYP

MAX

UNIT

C_iss

C_oss

C_rss

Q_g

Input Capacitance

2400

436

154

2950

610

230

130

_GS= 0V

_DS= 25V

f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

_GS= 10V

Q_gs

Q_gd

t_d(on)

t_r

V_DD= 0.5 V_DSS

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

I_D= I_D[Cont.] @ 25°C

_GS= 15V

V_DD= 0.5 V_DSS

I_D= I_D[Cont.] @ 25°C

R_G= 1.8Ω

t_d(off)

t_f

Turn-off Delay Time

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

I_S

Continuous Source Current (Body Diode)

Amps

I_SM

V_SD

t _rr

Pulsed Source Current

Diode Forward Voltage

(Body Diode)

(V_GS= 0V, I_S= -I_D[Cont.])

1.3

668

Volts

Reverse Recovery Time (I_S= -I_D[Cont.], dl_S/dt = 100A/µs)

Reverse Recovery Charge (I_S= -I_D[Cont.], dl_S/dt = 100A/µs)

152

2.5

334

Q _rr

µC

SAFE OPERATING AREA CHARACTERISTICS

Symbol Characteristic

Test Conditions

MIN

TYP

MAX

UNIT

_DS= 0.4 V_DSS, I_DS= P_D/ 0.4 V_DSS, t = 1 Sec.

SOA1

Safe Operating Area

310

Watts

Amps

_DS= I_D[Cont.], V_DS= P_D/ I_D[Cont.], t = 1 Sec.

SOA2

I_LM

Safe Operating Area

Inductive Current Clamped

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

1.0

0.5

D=0.5

0.2

0.1

0.05

Note:

0.02

0.01

0.005

Duty Factor D =

Peak T = P x Z

+ T

SINGLE PULSE

θJC

0.001

-5

-4

-3

-2

-1

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

1.0

APT6035BN

=10V

=6V

5.5V

4.5V

150

100

200

2 5 0

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS

FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

2.5

= 25°C

= -55°C

= +25°C

2µ SEC. PULSE TEST

NORMALIZED TO

= +125°C

= 10V @ 0.5 I [Cont.]

> I (ON) x R

(ON)MAX.

230µ SEC. PULSE TEST

DS DS

=10V

2.0

1.5

1.0

=20V

= +125°C

= +25°C

= -55°C

0.5

, GATE-TO-SOURCE VOLTAGE (VOLTS)

I , DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS

FIGURE 5, R (ON) vs DRAIN CURRENT

1.2

1.1

1.0

0.9

0.8

0.7

100

125

150

-50 -25

25 50 75 100 125 150

T , CASE TEMPERATURE (°C)

T , JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE

FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

1.4

= 0.5 I [Cont.]

= 10V

1.2

1.0

0.8

0.6

0.4

2.0

1.5

1.0

0.5

0.0

-50 -25

25 50 75 100 125 150

-50 -25

25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

T , CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE

FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

APT6035BN

100

10µS

100µS

1mS

OPERATION HERE

LIMITED BY R (ON)

iss

oss

10mS

100mS

rss

=+25°C

=+150°C

SINGLE PULSE

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

50 100

600

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

= I [Cont.]

=120V

=320V

=480V

= +150°C

= +25°C

120

1 6 0

200

1.0

1.5

2.0

Q , TOTAL GATE CHARGE (nC)

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

TO-247AD Package Outline

4.69 (.185)

5.31 (.209)

15.49 (.610)

16.26 (.640)

1.49 (.059)

2.49 (.098)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

3.55 (.140)

3.81 (.150)

2.87 (.113)

3.12 (.123)

4.50 (.177) Max.

1.65 (.065)

2.13 (.084)

0.40 (.016)

0.79 (.031)

19.81 (.780)

20.32 (.800)

Gate

1.01 (.040)

1.40 (.055)

Drain

Source

2.21 (.087)

2.59 (.102)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

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