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APT60GT60JRDQ3 [ADPOW]

Thunderbolt IGBT; 迅雷IGBT

APT60GT60JRDQ3


元器件型号：	APT60GT60JRDQ3
生产厂家：	ADVANCED POWER TECHNOLOGY
描述和应用：	Thunderbolt IGBT 迅雷IGBT 晶体晶体管双极性晶体管
PDF文件：	总9页 (文件大小：454K)
下载文档：	下载PDF数据表文档文件
型号参数：APT60GT60JRDQ3参数

APT60GT60SRG

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, D3PAK-3

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0 MICROSEMI

APT60GU30B

POWER MOS 7 IGBT

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20 ADPOW

APT60GU30B

POWER MOS 7 IGBT

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16 ADPOW

APT60GU30B

Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

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0 MICROSEMI

APT60GU30BG

Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

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0 MICROSEMI

APT60GU30S

POWER MOS 7 IGBT

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12 ADPOW

APT60GU30S

POWER MOS 7 IGBT

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13 ADPOW

APT60GU30S

Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, D2PAK-3

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0 MICROSEMI

APT60GU30SG

Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, D2PAK-3

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0 MICROSEMI

APT60M60JFLL

POWER MOS 7 R FREDFET

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16 ADPOW

APT60M60JFLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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36 ADPOW

APT60M60JFLL

Power Field-Effect Transistor, 70A I(D), 600V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

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10 ADPOW

APT60M60JFLL_03

POWER MOS 7 R FREDFET

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13 ADPOW

APT60M60JLL

POWER MOS 7 R MOSFET

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26 ADPOW

APT60M60JLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

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27 ADPOW

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