APT60M75PVR [ADPOW]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.; 功率MOS V是新一代高压N沟道增强型功率MOSFET 。
| 型号： | APT60M75PVR |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| 文件： | 总2页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT60M75PVR
600V 60.5A 0.075Ω
POWER MOS V®
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V® also
achieves faster switching speeds through optimized gate layout.
P-Pack
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
D
S
• New High Power P-Pack Package
G
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT60M75PVR
UNIT
VDSS
ID
Drain-Source Voltage
600
Volts
Continuous Drain Current @ TC = 25°C
60.5
Amps
Volts
1
IDM
Pulsed Drain Current
Y
242
±30
±40
625
5.0
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Watts
PD
W/°C
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 150
300
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
60.5
1
EAR
EAS
50
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
3600
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
PRELIMINAR
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
600
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
60.5
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms
0.075
100
500
±100
4
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
IGSS
nA
VGS(th)
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
EUROPE
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT60M75PVR
Test Conditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
16500
2000
750
700
85
VGS = 0V
VDS = 25V
f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
Qgs
Qgd
VDD = 0.5 VDSS
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
ID = ID[Cont.] @ 25°C
330
25
td(on)
tr
td(off)
tf
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 0.6Ω
20
Turn-off Delay Time
Fall Time
90
12
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
Y
MIN
TYP
MAX
60.5
242
1.3
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
t rr
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
(VGS = 0V, IS = -ID[Cont.]
)
Volts
ns
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
880
31
Q rr
µC
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.20
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1
2
3
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
PRELIMINAR
4
Starting T = +25°C, L = 1.97mH, R = 25Ω, Peak I = 60.5A
j G L
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
P-Pack Package Outline
41.53 (1.635)
41.02 (1.615)
35.18 (1.385)
34.67 (1.365)
3.43 (.135)
2.92 (.115)
(4-Places)
9.27 (.365)
8.64 (.340)
1.40 (.055)
1.02 (.040)
28.70 (1.130)
28.45 (1.120)
3.43 (.135)
2.92 (.115)
(4-Places)
4.06 (.160)
3.81 (.150)
(5 Places)
51.05 (2.01)
50.55 (1.99)
35.81 (1.41)
35.31 (1.39)
29.34 (1.155)
29.08 (1.145)
10.92 (.430)
10.67 (.420)
5.33 (.210)
4.83 (.190)
4.39 (.173)
4.14 (.163)
(4 Places)
.635 (.025)
.381 (.015)
11.63 (.458)
11.13 (.438)
12.45 (.490)
11.94 (.470)
Dimensions in Millimeters and (Inches)
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