APT60M75PVR [ADPOW]

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.; 功率MOS V是新一代高压N沟道增强型功率MOSFET 。
APT60M75PVR
型号: APT60M75PVR
厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述:

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
功率MOS V是新一代高压N沟道增强型功率MOSFET 。

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APT60M75PVR  
600V 60.5A 0.075  
POWER MOS V®  
Power MOS V® is a new generation of high voltage N-Channel enhancement  
mode power MOSFETs. This new technology minimizes the JFET effect,  
increases packing density and reduces the on-resistance. Power MOS V® also  
achieves faster switching speeds through optimized gate layout.  
P-Pack  
• Faster Switching  
• Lower Leakage  
• 100% Avalanche Tested  
D
S
• New High Power P-Pack Package  
G
MAXIMUM RATINGS  
Symbol Parameter  
All Ratings: T = 25°C unless otherwise specified.  
C
APT60M75PVR  
UNIT  
VDSS  
ID  
Drain-Source Voltage  
600  
Volts  
Continuous Drain Current @ TC = 25°C  
60.5  
Amps  
Volts  
1
IDM  
Pulsed Drain Current  
Y
242  
±30  
±40  
625  
5.0  
VGS  
VGSM  
Gate-Source Voltage Continuous  
Gate-Source Voltage Transient  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
Watts  
PD  
W/°C  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
-55 to 150  
300  
°C  
Amps  
mJ  
Lead Temperature: 0.063" from Case for 10 Sec.  
1
IAR  
Avalanche Current  
(Repetitive and Non-Repetitive)  
60.5  
1
EAR  
EAS  
50  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
4
3600  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
UNIT  
PRELIMINAR  
BVDSS  
ID(on)  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)  
Volts  
600  
2
On State Drain Current  
(VDS > ID(on) x RDS(on) Max, VGS = 10V)  
Amps  
60.5  
2
RDS(on)  
Drain-Source On-State Resistance  
(VGS = 10V, 0.5 ID[Cont.])  
Ohms  
0.075  
100  
500  
±100  
4
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)  
IDSS  
µA  
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)  
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 5mA)  
IGSS  
nA  
VGS(th)  
Volts  
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  
USA  
405 S.W. Columbia Street  
EUROPE  
Bend, Oregon 97702-1035  
F-33700 Merignac - France  
Phone: (541) 382-8028  
Phone: (33) 5 57 92 15 15  
FAX: (541) 388-0364  
FAX: (33) 5 56 47 97 61  
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord  
DYNAMIC CHARACTERISTICS  
Symbol Characteristic  
APT60M75PVR  
Test Conditions  
MIN  
TYP  
MAX  
UNIT  
Ciss  
Coss  
Crss  
Qg  
Input Capacitance  
16500  
2000  
750  
700  
85  
VGS = 0V  
VDS = 25V  
f = 1 MHz  
Output Capacitance  
pF  
Reverse Transfer Capacitance  
3
VGS = 10V  
Total Gate Charge  
Qgs  
Qgd  
VDD = 0.5 VDSS  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time  
Rise Time  
nC  
ns  
ID = ID[Cont.] @ 25°C  
330  
25  
td(on)  
tr  
td(off)  
tf  
VGS = 15V  
VDD = 0.5 VDSS  
ID = ID[Cont.] @ 25°C  
RG = 0.6  
20  
Turn-off Delay Time  
Fall Time  
90  
12  
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
Y
MIN  
TYP  
MAX  
60.5  
242  
1.3  
UNIT  
IS  
Continuous Source Current (Body Diode)  
Amps  
1
ISM  
VSD  
t rr  
Pulsed Source Current  
Diode Forward Voltage  
(Body Diode)  
2
(VGS = 0V, IS = -ID[Cont.]  
)
Volts  
ns  
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)  
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)  
880  
31  
Q rr  
µC  
THERMAL CHARACTERISTICS  
Symbol Characteristic  
MIN  
TYP  
MAX  
0.20  
40  
UNIT  
RθJC  
RθJA  
Junction to Case  
°C/W  
Junction to Ambient  
1
2
3
Repetitive Rating: Pulse width limited by maximum junction  
temperature.  
See MIL-STD-750 Method 3471  
PRELIMINAR  
4
Starting T = +25°C, L = 1.97mH, R = 25, Peak I = 60.5A  
j G L  
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%  
APT Reserves the right to change, without notice, the specifications and information contained herein.  
P-Pack Package Outline  
41.53 (1.635)  
41.02 (1.615)  
35.18 (1.385)  
34.67 (1.365)  
3.43 (.135)  
2.92 (.115)  
(4-Places)  
9.27 (.365)  
8.64 (.340)  
1.40 (.055)  
1.02 (.040)  
28.70 (1.130)  
28.45 (1.120)  
3.43 (.135)  
2.92 (.115)  
(4-Places)  
4.06 (.160)  
3.81 (.150)  
(5 Places)  
51.05 (2.01)  
50.55 (1.99)  
35.81 (1.41)  
35.31 (1.39)  
29.34 (1.155)  
29.08 (1.145)  
10.92 (.430)  
10.67 (.420)  
5.33 (.210)  
4.83 (.190)  
4.39 (.173)  
4.14 (.163)  
(4 Places)  
.635 (.025)  
.381 (.015)  
11.63 (.458)  
11.13 (.438)  
12.45 (.490)  
11.94 (.470)  
Dimensions in Millimeters and (Inches)  

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