APT60M80L2VFRG [MICROSEMI]

Power Field-Effect Transistor, 65A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN;
APT60M80L2VFRG
型号: APT60M80L2VFRG
厂家: Microsemi    Microsemi
描述:

Power Field-Effect Transistor, 65A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN

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APT60M80L2VFR  
600V 65A 0.080Ω  
POWER MOS V® FREDFET  
Power MOS V® is a new generation of high voltage N-Channel enhancement  
mode power MOSFETs. This new technology minimizes the JFET effect,  
increases packing density and reduces the on-resistance. Power MOS V®  
also achieves faster switching speeds through optimized gate layout.  
L2VFR  
TO-264  
Max  
• TO-264 MAX Package  
• Avalanche Energy Rated  
D
S
• Faster Switching  
• Lower Leakage  
FAST RECOVERY BODY DIODE  
G
MAXIMUM RATINGS  
Symbol Parameter  
All Ratings: T = 25°C unless otherwise specified.  
C
APT60M80L2VFR  
UNIT  
VDSS  
ID  
Drain-Source Voltage  
600  
65  
Volts  
Continuous Drain Current @ TC = 25°C  
Amps  
Volts  
1
IDM  
Pulsed Drain Current  
260  
VGS  
VGSM  
Gate-Source Voltage Continuous  
Gate-Source Voltage Transient  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
±30  
±40  
Watts  
W/°C  
833  
PD  
6.67  
-55 to 150  
300  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
°C  
Amps  
mJ  
Lead Temperature: 0.063" from Case for 10 Sec.  
1
IAR  
Avalanche Current  
(Repetitive and Non-Repetitive)  
65  
1
EAR  
EAS  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
50  
4
3200  
STATICELECTRICALCHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
UNIT  
Volts  
Ohms  
BVDSS  
RDS(on)  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)  
600  
2
Drain-Source On-State Resistance  
(VGS = 10V, ID = 32.5A)  
0.080  
250  
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)  
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)  
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 5mA)  
IDSS  
µA  
1000  
±100  
4
IGSS  
nA  
VGS(th)  
Volts  
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  
DYNAMIC CHARACTERISTICS  
APT60M80L2VFR  
Symbol  
Ciss  
Coss  
Crss  
Qg  
MIN  
TYP  
MAX  
Characteristic  
UNIT  
TestConditions  
V
= 0V  
Input Capacitance  
13300  
1610  
GS  
V
= 25V  
pF  
Output Capacitance  
DS  
f = 1 MHz  
Reverse Transfer Capacitance  
700  
590  
50  
3
V
= 10V  
Total Gate Charge  
GS  
V
= 300V  
Qgs  
nC  
ns  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time  
Rise Time  
DD  
I
= 65A @ 25°C  
D
Qgd  
310  
14  
24  
RESISTIVESWITCHING  
td(on)  
tr  
V
= 15V  
GS  
V
= 300V  
DD  
td(off)  
70  
Turn-off Delay Time  
Fall Time  
I
= 65A @ 25°C  
D
tf  
R
= 0.6Ω  
31  
G
INDUCTIVESWITCHING@25°C  
6
Eon  
Eoff  
1880  
2830  
3100  
Turn-on Switching Energy  
V
= 400V, V = 15V  
GS  
DD  
I
Turn-off Switching Energy  
= 65A, R = 5Ω  
D
G
µJ  
INDUCTIVESWITCHING@125°C  
6
Eon  
Eoff  
Turn-on Switching Energy  
V
= 400V, V = 15V  
GS  
DD  
Turn-off Switching Energy  
I
= 65A, R = 5Ω  
3345  
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
65  
UNIT  
IS  
Continuous Source Current (Body Diode)  
Amps  
1
ISM  
Pulsed Source Current  
Diode Forward Voltage  
(Body Diode)  
280  
1.3  
15  
2
VSD  
Volts  
V/ns  
(VGS = 0V, IS = -65A)  
dv  
/
dv  
5
Peak Diode Recovery  
/
dt  
dt  
Reverse Recovery Time  
(IS = -65A, di/dt = 100A/µs)  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
300  
600  
trr  
ns  
µC  
Reverse Recovery Charge  
(IS = -65A, di/dt = 100A/µs)  
2.3  
7
Qrr  
Peak Recovery Current  
(IS = -65A, di/dt = 100A/µs)  
16  
32  
IRRM  
Amps  
THERMALCHARACTERISTICS  
Symbol Characteristic  
MIN  
TYP  
MAX  
0.15  
40  
UNIT  
Junction to Case  
RθJC  
RθJA  
°C/W  
Junction to Ambient  
1 Repetitive Rating: Pulse width limited by maximum junction  
temperature  
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%  
4 Starting T = +25°C, L = 1.51mH, R = 25, Peak I = 65A  
j
G
L
dv  
5
/
numbers reflect the limitations of the test circuit rather than the  
di  
dt  
device itself.  
I
-I 65A  
/
700A/µs  
V
R 600V T 150°C  
J
dt  
S
D
3 See MIL-STD-750 Method 3471  
6
Eon includes diode reverse recovery. See figures 18, 20.  
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.  
0.16  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
0.9  
0.7  
0.5  
0.3  
Note:  
t
1
t
2
t
1
Duty Factor D =  
Peak T = P x Z  
/
t
SINGLEPULSE  
0.02  
0
0.1  
2
+ T  
J
DM θJC  
C
0.05  
10-5  
10-4  
10-3  
10-2  
10-1  
1.0  
RECTANGULARPULSEDURATION(SECONDS)  
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION  
Typical Performance Curves  
APT60M80L2VFR  
180  
160  
140  
120  
100  
80  
6.5V  
6V  
15 &10V  
RC MODEL  
0.0456  
Junction  
temp. (°C)  
5.5V  
0.0272F  
0.493F  
Power  
(watts)  
60  
5V  
40  
0.104  
4.5V  
4V  
20  
0
Case temperature. (°C)  
0
5
10  
15  
20  
25  
30  
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)  
DS  
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL  
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS  
1.4  
200  
NORMALIZED TO  
V
> I (ON) x  
250µSEC. PULSE TEST  
@ <0.5 % DUTY CYCLE  
R
(ON)MAX.  
DS  
DS  
D
V
= 10V  
@
I = 32.5A  
180  
160  
140  
120  
100  
80  
GS  
D
1.3  
1.2  
1.1  
1.0  
V
=10V  
GS  
V
=20V  
GS  
60  
T
= +125°C  
J
40  
0.9  
0.8  
T
= -55°C  
7
J
20  
0
T
= +25°C  
3
J
0
1
2
4
5
6
8
0
20  
40  
60  
80 100 120 140 160  
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)  
I ,DRAINCURRENT(AMPERES)  
GS  
D
FIGURE4, TRANSFERCHARACTERISTICS  
FIGURE5,R (ON)vsDRAINCURRENT  
DS  
1.15  
70  
60  
50  
40  
30  
20  
1.10  
1.05  
1.00  
0.95  
0.90  
10  
0
25  
50  
75  
100  
125  
150  
-50 -25  
0
25  
50 75 100 125 150  
T ,CASETEMPERATURE(°C)  
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE  
T ,JUNCTIONTEMPERATURE(°C)  
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE  
C
J
2.5  
1.2  
I
= 32.5A  
= 10V  
D
V
GS  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
2.0  
1.5  
1.0  
0.5  
0.0  
-50 -25  
0
25 50  
75 100 125 150  
-50 -25  
0
25  
50  
75 100 125 150  
T ,JUNCTIONTEMPERATURE(°C)  
T ,CASETEMPERATURE(°C)  
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE  
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE  
APT60M80L2VFR  
260  
100  
50,000  
OPERATIONHERE  
LIMITEDBYR (ON)  
DS  
C
iss  
10,000  
5000  
100µS  
C
C
oss  
10  
1000  
500  
1mS  
rss  
10mS  
T
=+25°C  
C
J
T =+150°C  
SINGLEPULSE  
10  
1
100  
1
100  
600  
0
10  
20  
30  
40  
50  
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)  
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)  
DS  
DS  
FIGURE10,MAXIMUMSAFEOPERATINGAREA  
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE  
16  
200  
I
= 65A  
D
100  
12  
8
T =+150°C  
J
T =+25°C  
J
V
=120V  
DS  
V
=300V  
DS  
10  
V
=480V  
DS  
4
0
1
0.3  
V
0
100 200 300 400 500 600 700 800  
Q ,TOTALGATECHARGE(nC)  
0.5  
0.7  
0.9  
1.1  
1.3  
1.5  
,SOURCE-TO-DRAINVOLTAGE(VOLTS)  
g
SD  
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE  
FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE  
600  
200  
V
= 400V  
DD  
= 5Ω  
R
T
G
500  
= 125°C  
t
J
d(off)  
L = 100µH  
150  
100  
t
V
= 400V  
400  
300  
200  
f
DD  
= 5Ω  
R
T
G
= 125°C  
J
L = 100µH  
50  
0
100  
0
t
r
t
d(on)  
30  
50  
70  
(A)  
90  
110  
30  
50  
70  
(A)  
90  
110  
I
I
D
D
FIGURE 14, DELAY TIMES vs CURRENT  
FIGURE 15, RISE AND FALL TIMES vs CURRENT  
25,000  
20,000  
15,000  
10,000  
8,000  
6,000  
4,000  
2,000  
0
V
= 400V  
V
I
= 400V  
DD  
= 5Ω  
DD  
= 65A  
R
T
G
D
= 125°C  
T = 125°C  
J
J
L = 100µH  
L = 100µH  
EON includes  
E
EON includes  
off  
E
off  
diode reverse recovery.  
diode reverse recovery.  
E
on  
E
on  
5,000  
0
30 40 50  
60  
70 80  
(A)  
90 100 110  
0
5
10 15 20 25 30 35 40 45 50  
R ,GATERESISTANCE(Ohms)  
I
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT  
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE  
APT60M80L2VFR  
GateVoltage  
DrainCurrent  
10%  
90%  
GateVoltage  
T 125°C  
T 125°C  
J
J
td(off)  
td(on)  
90%  
90%  
DrainVoltage  
tr  
tf  
10%  
0
5%  
10%  
5%  
DrainVoltage  
DrainCurrent  
SwitchingEnergy  
SwitchingEnergy  
Figure19,Turn-offSwitchingWaveformsandDefinitions  
Figure18,Turn-onSwitchingWaveformsandDefinitions  
APT60DF60  
VDS  
ID  
VDD  
G
D.U.T.  
Figure 20, Inductive Switching Test Circuit  
TO-264MAXTM(L2VFR)PackageOutline  
4.60 (.181)  
5.21 (.205)  
19.51 (.768)  
20.50 (.807)  
1.80 (.071)  
2.01 (.079)  
5.79 (.228)  
6.20 (.244)  
25.48 (1.003)  
26.49 (1.043)  
2.29 (.090)  
2.69 (.106)  
2.29 (.090)  
2.69 (.106)  
19.81 (.780)  
21.39 (.842)  
Gate  
Drain  
Source  
0.48 (.019)  
0.84 (.033)  
2.59 (.102)  
3.00 (.118)  
0.76 (.030)  
1.30 (.051)  
2.79 (.110)  
3.18 (.125)  
5.45 (.215) BSC  
2-Plcs.  
Dimensions in Millimeters and (Inches)  
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522  
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.  

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