APT60M80L2VFRG [MICROSEMI]
Power Field-Effect Transistor, 65A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN;
| 型号： | APT60M80L2VFRG |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 65A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT60M80L2VFR
600V 65A 0.080Ω
POWER MOS V® FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
L2VFR
TO-264
Max
• TO-264 MAX Package
• Avalanche Energy Rated
D
S
• Faster Switching
• Lower Leakage
•
FAST RECOVERY BODY DIODE
G
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT60M80L2VFR
UNIT
VDSS
ID
Drain-Source Voltage
600
65
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
260
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
833
PD
6.67
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
65
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
3200
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
2
Drain-Source On-State Resistance
(VGS = 10V, ID = 32.5A)
0.080
250
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
IDSS
µA
1000
±100
4
IGSS
nA
VGS(th)
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
APT60M80L2VFR
Symbol
Ciss
Coss
Crss
Qg
MIN
TYP
MAX
Characteristic
UNIT
TestConditions
V
= 0V
Input Capacitance
13300
1610
GS
V
= 25V
pF
Output Capacitance
DS
f = 1 MHz
Reverse Transfer Capacitance
700
590
50
3
V
= 10V
Total Gate Charge
GS
V
= 300V
Qgs
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
DD
I
= 65A @ 25°C
D
Qgd
310
14
24
RESISTIVESWITCHING
td(on)
tr
V
= 15V
GS
V
= 300V
DD
td(off)
70
Turn-off Delay Time
Fall Time
I
= 65A @ 25°C
D
tf
R
= 0.6Ω
31
G
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
1880
2830
3100
Turn-on Switching Energy
V
= 400V, V = 15V
GS
DD
I
Turn-off Switching Energy
= 65A, R = 5Ω
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Eon
Eoff
Turn-on Switching Energy
V
= 400V, V = 15V
GS
DD
Turn-off Switching Energy
I
= 65A, R = 5Ω
3345
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
65
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
280
1.3
15
2
VSD
Volts
V/ns
(VGS = 0V, IS = -65A)
dv
/
dv
5
Peak Diode Recovery
/
dt
dt
Reverse Recovery Time
(IS = -65A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
300
600
trr
ns
µC
Reverse Recovery Charge
(IS = -65A, di/dt = 100A/µs)
2.3
7
Qrr
Peak Recovery Current
(IS = -65A, di/dt = 100A/µs)
16
32
IRRM
Amps
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.15
40
UNIT
Junction to Case
RθJC
RθJA
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
4 Starting T = +25°C, L = 1.51mH, R = 25Ω, Peak I = 65A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 65A
/
≤ 700A/µs
V
R ≤ 600V T ≤ 150°C
J
dt
S
D
3 See MIL-STD-750 Method 3471
6
Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.9
0.7
0.5
0.3
Note:
t
1
t
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
SINGLEPULSE
0.02
0
0.1
2
+ T
J
DM θJC
C
0.05
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT60M80L2VFR
180
160
140
120
100
80
6.5V
6V
15 &10V
RC MODEL
0.0456
Junction
temp. (°C)
5.5V
0.0272F
0.493F
Power
(watts)
60
5V
40
0.104
4.5V
4V
20
0
Case temperature. (°C)
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
1.4
200
NORMALIZED TO
V
> I (ON) x
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
(ON)MAX.
DS
DS
D
V
= 10V
@
I = 32.5A
180
160
140
120
100
80
GS
D
1.3
1.2
1.1
1.0
V
=10V
GS
V
=20V
GS
60
T
= +125°C
J
40
0.9
0.8
T
= -55°C
7
J
20
0
T
= +25°C
3
J
0
1
2
4
5
6
8
0
20
40
60
80 100 120 140 160
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
1.15
70
60
50
40
30
20
1.10
1.05
1.00
0.95
0.90
10
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
T ,JUNCTIONTEMPERATURE(°C)
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
C
J
2.5
1.2
I
= 32.5A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
APT60M80L2VFR
260
100
50,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
iss
10,000
5000
100µS
C
C
oss
10
1000
500
1mS
rss
10mS
T
=+25°C
C
J
T =+150°C
SINGLEPULSE
10
1
100
1
100
600
0
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
16
200
I
= 65A
D
100
12
8
T =+150°C
J
T =+25°C
J
V
=120V
DS
V
=300V
DS
10
V
=480V
DS
4
0
1
0.3
V
0
100 200 300 400 500 600 700 800
Q ,TOTALGATECHARGE(nC)
0.5
0.7
0.9
1.1
1.3
1.5
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE
600
200
V
= 400V
DD
= 5Ω
R
T
G
500
= 125°C
t
J
d(off)
L = 100µH
150
100
t
V
= 400V
400
300
200
f
DD
= 5Ω
R
T
G
= 125°C
J
L = 100µH
50
0
100
0
t
r
t
d(on)
30
50
70
(A)
90
110
30
50
70
(A)
90
110
I
I
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
25,000
20,000
15,000
10,000
8,000
6,000
4,000
2,000
0
V
= 400V
V
I
= 400V
DD
= 5Ω
DD
= 65A
R
T
G
D
= 125°C
T = 125°C
J
J
L = 100µH
L = 100µH
EON includes
E
EON includes
off
E
off
diode reverse recovery.
diode reverse recovery.
E
on
E
on
5,000
0
30 40 50
60
70 80
(A)
90 100 110
0
5
10 15 20 25 30 35 40 45 50
R ,GATERESISTANCE(Ohms)
I
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT60M80L2VFR
GateVoltage
DrainCurrent
10%
90%
GateVoltage
T 125°C
T 125°C
J
J
td(off)
td(on)
90%
90%
DrainVoltage
tr
tf
10%
0
5%
10%
5%
DrainVoltage
DrainCurrent
SwitchingEnergy
SwitchingEnergy
Figure19,Turn-offSwitchingWaveformsandDefinitions
Figure18,Turn-onSwitchingWaveformsandDefinitions
APT60DF60
VDS
ID
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-264MAXTM(L2VFR)PackageOutline
4.60 (.181)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.80 (.071)
2.01 (.079)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
相关型号：
APT60M80L2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
APT60M80L2VRG
Power Field-Effect Transistor, 65A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN
MICROSEMI
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