APT8018L2VFR [ADPOW]

POWER MOS V FREDFET; 功率MOS V FREDFET

APT8018L2VFR


型号：	APT8018L2VFR
厂家：	ADVANCED POWER TECHNOLOGY
描述：	POWER MOS V FREDFET 功率MOS V FREDFET 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总4页 (文件大小：136K)
下载：	下载PDF数据表文档文件

APT8018L2VFRG

Power Field-Effect Transistor, 43A I(D), 800V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN

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0 MICROSEMI

APT8018L2VR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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18 MICROSEMI

APT8018L2VR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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15 ADPOW

APT8018L2VR_06

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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15 MICROSEMI

APT801R2AN

TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 8A I(D) | TO-3

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6 ETC

APT801R2BN

TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 9A I(D) | TO-247AD

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30 ETC

APT801R2BN-BUTT

9A, 800V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

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0 MICROSEMI

APT801R2BNR

TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 9A I(D) | TO-247AD

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12 ETC

APT801R2BNR-BUTT

Power Field-Effect Transistor, 9A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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0 ADPOW

APT801R2BNR-GULLWING

Power Field-Effect Transistor, 9A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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0 ADPOW

APT801R2CN

TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 7A I(D) | TO-254ISO

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10 ETC

APT801R2DN

TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | CHIP

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18 ETC

APT801R4AN

TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 7.5A I(D) | TO-3

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10 ETC

APT801R4BN

TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 8.5A I(D) | TO-247AD

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27 ETC

APT801R4BN-BUTT

8.5A, 800V, 1.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

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0 MICROSEMI

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