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APT801R2BN [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 9A I(D) | TO-247AD ; 晶体管| MOSFET | N沟道| 800V V（ BR ） DSS | 9A I（ D） | TO- 247AD\n
APT801R2BN
型号： APT801R2BN
厂家： ETC    ETC
描述：

TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 9A I(D) | TO-247AD
晶体管| MOSFET | N沟道| 800V V（ BR ） DSS | 9A I（ D） | TO- 247AD\n

晶体 晶体管
文件： 总4页 (文件大小：187K)
中文：  中文翻译
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相关型号：

APT801R2BN-BUTT

 9A, 800V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

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MICROSEMI

APT801R2BN-GULLWING

 Power Field-Effect Transistor, 9A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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MICROSEMI

APT801R2BNR

 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 9A I(D) | TO-247AD

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ETC

APT801R2BNR-BUTT

 Power Field-Effect Transistor, 9A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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ADPOW

APT801R2BNR-GULLWING

 Power Field-Effect Transistor, 9A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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ADPOW

APT801R2CN

 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 7A I(D) | TO-254ISO

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ETC

APT801R2DN

 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | CHIP

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ETC

APT801R4AN

 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 7.5A I(D) | TO-3

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ETC

APT801R4BN

 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 8.5A I(D) | TO-247AD

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ETC

APT801R4BN-BUTT

 8.5A, 800V, 1.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

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MICROSEMI

APT801R4BN-GULLWING

 Power Field-Effect Transistor, 8.5A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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MICROSEMI

APT801R4BNR

 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 8.5A I(D) | TO-247AD

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ETC

APT801R4BNR-BUTT

 Power Field-Effect Transistor, 8.5A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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ADPOW

APT801R4BNR-GULLWING

 Power Field-Effect Transistor, 8.5A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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ADPOW

APT801R4CN

 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 6.5A I(D) | TO-254ISO

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ETC

APT8020B2FLL

 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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APT8020B2FLL

 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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MICROSEMI

APT8020B2FLLE3

 Power Field-Effect Transistor, 38A I(D), 800V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-MAX, 3 PIN

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MICROSEMI

APT8020B2FLLG

 Power Field-Effect Transistor, 38A I(D), 800V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, B2, T-MAX-3

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MICROSEMI

APT8020B2LL

 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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ADPOW
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