APT8020JLL_04 [ADPOW]
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.; 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。
| 型号： | APT8020JLL_04 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| 文件： | 总5页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT8020JLL
800V 33A 0.200Ω
R
POWER MOS 7 MOSFET
S
S
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
D
G
SOT-227
"UL Recognized"
ISOTOP®
D
S
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
G
• Popular SOT-227 Package
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT8020JLL
800
UNIT
VDSS
ID
Drain-Source Voltage
Volts
Continuous Drain Current @ TC = 25°C
33
Amps
Volts
1
IDM
Pulsed Drain Current
132
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
520
PD
4.16
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
33
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
3000
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
2
Drain-Source On-State Resistance
(VGS = 10V, ID = 16.5A)
0.200
100
500
±100
5
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
IDSS
µA
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMICCHARACTERISTICS
Symbol Characteristic
APT8020JLL
TestConditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
5200
1000
190
195
27
V
= 0V
GS
Output Capacitance
V
= 25V
DS
pF
f = 1 MHz
Reverse Transfer Capacitance
3
Total Gate Charge
V
= 10V
GS
V
= 400V
Qgs
Qgd
td(on)
tr
DD
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
I
= 33A @ 25°C
D
130
12
RESISTIVESWITCHING
V
= 15V
GS
14
V
= 400V
DD
I
= 33A @ 25°C
td(off)
39
Turn-off Delay Time
Fall Time
D
R
= 0.6Ω
G
tf
10
760
715
1250
780
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy
V
= 533V, V = 15V
GS
DD
I
= 33A, R = 5Ω
Turn-off Switching Energy
D
G
INDUCTIVESWITCHING@125°C
µJ
6
Turn-on Switching Energy
V
= 533V, V = 15V
GS
DD
I
= 33A, R = 5Ω
Turn-off Switching Energy
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol
MIN
TYP
MAX
33
Characteristic / Test Conditions
UNIT
IS
Continuous Source Current (Body Diode)
Amps
ISM
1
142
1.3
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
VSD
t rr
(VGS = 0V, IS = -33A)
Volts
ns
920
Reverse Recovery Time (IS = -33A, dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -33A, dlS/dt = 100A/µs)
Q rr
20.7
µC
dv
/
dv
5
V/ns
10
Peak Diode Recovery
/
dt
dt
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.24
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 5.51mH, R = 25Ω, Peak I = 33A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 33A
/
≤ 700A/µs
V
R ≤ 800V T ≤ 150°C
dt
S
D
J
6 Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinforationcontainedherein.
0.25
0.9
0.20
0.7
0.15
0.5
Note:
0.10
t
1
0.3
t
2
t
0.05
1
Duty Factor D =
/
t
2
0.1
0.05
Peak T = P
x Z + T
θJC C
J
DM
SINGLEPULSE
10-3
0
10-5
10-4
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT8020JLL
100
80
RC MODEL
Junction
8V
V
GS
=15 &10 V
temp. (°C)
0.0528
0.0203F
0.173F
0.490F
7V
60
6.5V
Power
(watts)
0.0651
0.123
40
6V
20
0
5.5V
Case temperature. (°C)
5V
30
0
5
10
15
20
25
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
1.40
120
NORMALIZED TO
V
> I (ON) x
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
(ON)MAX.
DS
DS
D
V
= 10V
@
I
= 16.5A
GS
D
1.30
1.20
1.10
1.00
100
80
V
=10V
GS
60
T
= +125°C
= +25°C
J
40
T
= -55°C
J
V
=20V
GS
T
J
0.90
0.80
20
0
0
2
4
6
8
10
0
10
20
30
40
50 60 70
I ,DRAINCURRENT(AMPERES)
80
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
1.15
1.10
1.05
1.00
35
30
25
20
15
10
0.95
0.90
5
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 16.5A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
0.7
0.6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
AP8020JLL
132
100
20,000
10,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
50
C
iss
100µS
10
1,000
C
C
oss
1mS
T
=+25°C
C
J
10mS
T =+150°C
rss
SINGLEPULSE
10
1
16
12
100
1
V
100
800
0
10
20
30
40
50
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
200
I
= 33A
D
100
T =+150°C
J
V
=160V
DS
T =+25°C
J
8
V
=400V
V
=640V
DS
DS
10
4
0
1
0
50
100
150
200
250
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q ,TOTALGATECHARGE(nC)
g
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
SD
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
200
100
V
= 533V
DD
= 5Ω
180
R
T
t
G
d(off)
= 125°C
J
160
140
80
60
40
L = 100µH
V
= 533V
t
DD
= 5Ω
f
R
T
120
100
80
G
= 125°C
J
L = 100µH
t
r
60
40
20
0
t
d(on)
20
0
10
20
30
40
50
60
10
20
30
40
50
60
I
(A)
I (A)
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
2000
1500
1000
5000
4000
3000
2000
V
= 533V
V
I
= 533V
DD
DD
= 38A
R
= 5Ω
G
D
T
= 125°C
T
= 125°C
J
J
L = 100µH
L = 100µH
EON includes
E
off
EON includes
diode reverse recovery.
diode reverse recovery.
E
on
E
E
off
on
1000
0
500
0
10
20
30
40
50
60
0
5
10 15 20 25 30 35 40 45 50
I
(A)
R ,GATERESISTANCE(Ohms)
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT8020JLL
90%
GateVoltage
10%
T 125°C
T 125°C
J
J
GateVoltage
DrainVoltage
td(off)
td(on)
tr
90%
tf
DrainCurrent
DrainVoltage
90%
10%
0
5%
5%
DrainCurrent
10%
SwitchingEnergy
SwitchingEnergy
Figure18,Turn-onSwitchingWaveformsandDefinitions
Figure19,Turn-offSwitchingWaveformsandDefinitions
APT30DF100
VDS
ID
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227(ISOTOP®)PackageOutline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Dimensions in Millimeters and (Inches)
Gate
ISOTOP®isaRegisteredTrademarkofSGSThomson. APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
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