APT8052BFLL [ADPOW]

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.; 功率MOS 7TM是新一代低损耗,高电压,N沟道增强型功率MOSFET 。
APT8052BFLL
型号: APT8052BFLL
厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述:

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
功率MOS 7TM是新一代低损耗,高电压,N沟道增强型功率MOSFET 。

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APT8052BFLL_04

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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12 ADPOW

APT8052BLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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17 ADPOW

APT8052BLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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47 ADPOW

APT8052BLL

Power Field-Effect Transistor, 15A I(D), 800V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

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0 MICROSEMI

APT8052BLL_04

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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14 ADPOW

APT8052HLL

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 MICROSEMI

APT8052HLL

Power Field-Effect Transistor, 13A I(D), 800V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN

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0 ADPOW

APT8052SFLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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14 ADPOW

APT8052SFLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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30 ADPOW

APT8052SLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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22 ADPOW

APT8052SLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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17 ADPOW

APT8052SLL

Power Field-Effect Transistor, 15A I(D), 800V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3

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0 MICROSEMI

APT8056BVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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40 ADPOW

APT8056BVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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25 ADPOW

APT8056BVFR

Power Field-Effect Transistor, 16A I(D), 800V, 0.56ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

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2 ADPOW