APT8052SLL [MICROSEMI]

Power Field-Effect Transistor, 15A I(D), 800V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3;
APT8052SLL
元器件型号: APT8052SLL
生产厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述和应用:

Power Field-Effect Transistor, 15A I(D), 800V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3

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PDF文件: 总5页 (文件大小:154K)
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型号参数:APT8052SLL参数

APT8056BVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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40 ADPOW

APT8056BVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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25 ADPOW

APT8056BVFR

Power Field-Effect Transistor, 16A I(D), 800V, 0.56ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

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2 ADPOW

APT8056BVFR_04

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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11 ADPOW

APT8056BVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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43 ADPOW

APT8058HVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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27 ADPOW

APT8065

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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11 ADPOW

APT8065

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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14 ADPOW

APT8065

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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26 ADPOW

APT8065

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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26 ADPOW

APT8065AVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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34 ADPOW

APT8065BVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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33 ADPOW

APT8065BVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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30 ADPOW

APT8065BVFR_05

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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22 ADPOW

APT8065BVFRG

Power Field-Effect Transistor, 13A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

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0 MICROSEMI