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APT8075 [ADPOW]

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET
APT8075
型号： APT8075
厂家： ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述：

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N沟道增强型高压功率MOSFET

高压 高电压电源
文件： 总4页 (文件大小：54K)
中文：  中文翻译
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相关型号：

APT8075AN

 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 11.5A I(D) | TO-3

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ETC

APT8075BN

 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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APT8075BN-BUTT

 Power Field-Effect Transistor, 13A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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APT8075BN-BUTT

 13A, 800V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

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MICROSEMI

APT8075BN-GULLWING

 Power Field-Effect Transistor, 13A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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APT8075BN-GULLWING

 13 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

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MICROSEMI

APT8075BNR

 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 13A I(D) | TO-247AD

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ETC

APT8075BNR-BUTT

 Power Field-Effect Transistor, 13A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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APT8075BNR-GULLWING

 Power Field-Effect Transistor, 13A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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APT8075BNR-GULLWING

 13A, 800V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

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MICROSEMI

APT8075BVFR

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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APT8075BVFRG

 Power Field-Effect Transistor, 12A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

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MICROSEMI

APT8075BVFR_05

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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APT8075BVR

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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APT8075BVR

 Power Field-Effect Transistor, 12A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,

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MICROSEMI

APT8075BVRG

 Power Field-Effect Transistor, 12A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,

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APT8075CN

 Transistor

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APT8075DN

 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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APT8075EN

 Transistor

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APT8075HN

 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 11.5A I(D) | TO-258ISO

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