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元器件品牌
APT80GP60B2
[ADPOW]
POWER MOS 7 IGBT; 功率MOS 7 IGBT
元器件型号：
APT80GP60B2
生产厂家：
ADVANCED POWER TECHNOLOGY
描述和应用：
POWER MOS 7 IGBT
功率MOS 7 IGBT
晶体 晶体管 功率控制 瞄准线 双极性晶体管 栅
PDF文件：
总6页 (文件大小：96K)
下载文档：
下载PDF数据表文档文件
型号参数：APT80GP60B2参数
查看货源
APT80GP60J
Volts:600V VF/Vce(ON):2.5V ID(cont):80Amps|Ultrafast IGBT Family
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ETC
APT80GP60J
POWER MOS 7 IGBT
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ADPOW
APT80GP60J
POWER MOS 7 IGBT
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24
ADPOW
APT80GP60JD3
Insulated Gate Bipolar Transistor, 68A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4
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0
MICROSEMI
APT80GP60JDF3
Insulated Gate Bipolar Transistor, 151A I(C), 600V V(BR)CES
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0
MICROSEMI
APT80GP60JDQ3
POWER MOS 7 IGBT
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27
ADPOW
APT80GP60JDQ3
POWER MOS 7 IGBT
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30
ADPOW
APT80M60J
N-Channel MOSFET
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18
MICROSEMI
APT80M60J
N-Channel MOSFET
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29
MICROSEMI
APT80M60J_09
N-Channel MOSFET
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4
MICROSEMI
APT80SM120B
Power Field-Effect Transistor,
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156
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0
MICROSEMI
APT81H50B2
Power Field-Effect Transistor, 81A I(D), 500V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB, ROHS COMPLIANT PACKAGE-3
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0
MICROSEMI
APT81H50L
Power Field-Effect Transistor, 81A I(D), 500V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, ROHS COMPLIANT PACKAGE-3
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156
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0
MICROSEMI
APT-8255R
2000MHz - 8000MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
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0
AGILENT
APT8256
Analog Circuit
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1
APLUS
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