APTGF350DU60 [ADPOW]
Dual common source NPT IGBT Power Module; 双共源NPT IGBT功率模块
| 型号： | APTGF350DU60 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Dual common source NPT IGBT Power Module |
| 文件： | 总6页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF350DU60
VCES = 600V
Dual common source
IC = 350A @ Tc = 80°C
NPT IGBT Power Module
Application
Sꢀ AC Switches
Sꢀ Switched Mode Power Supplies
Sꢀ Uninterruptible Power Supplies
Features
Sꢀ Non Punch Through (NPT) THUNDERBOLT IGBT®
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-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Sꢀ Kelvin emitter for easy drive
Sꢀ Very low stray inductance
-
-
Symmetrical design
M5 power connectors
Sꢀ High level of integration
Benefits
G1
C1
E
C2
Sꢀ Outstanding performance at high frequency
operation
E1
Sꢀ Stable temperature behavior
E2
G2
Sꢀ Very rugged
Sꢀ Direct mounting to heatsink (isolated package)
Sꢀ Low junction to case thermal resistance
Sꢀ Easy paralleling due to positive TC of VCEsat
S
Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings
600
Unit
VCES
Collector - Emitter Breakdown Voltage
Continuous Collector Current
V
Tc = 25°C
Tc = 80°C
Tc = 25°C
430
IC
A
350
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
1225
±20
V
W
Tc = 25°C
1562
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C 1225A @ 600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 6
APT website – http://www.advancedpower.com
APTGF350DU60
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
600
BVCES Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 200µA
V
Tj = 25°C
200
4000
2.5
VGE = 0V
ICES
Zero Gate Voltage Collector Current
µA
VCE = 600V
Tj = 125°C
Tj = 25°C
Tj = 125°C
2.0
2.2
VGE =15V
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
V
V
IC = 360A
VGE = VCE, IC = 4mA
VGE = ±20V, VCE = 0V
3
5
IGES
Gate – Emitter Leakage Current
±300 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
VGE = 0V
Min Typ Max Unit
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Input Capacitance
17.2
VCE = 25V
f = 1MHz
nF
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
1.88
1.6
1320
1160
800
26
VGS = 15V
VBus = 300V
IC = 360A
nC
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Inductive Switching (25°C)
VGE = 15V
25
150
30
13.5
11.5
26
25
170
40
ns
mJ
ns
VBus = 400V
Td(off) Turn-off Delay Time
IC = 360A
Tf
Eon
Eoff
Td(on)
Tr
Fall Time
RG = 1.25ꢁ
Turn-on Switching Energy ꢀ
Turn-off Switching Energy ꢀ
Turn-on Delay Time
Rise Time
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
Td(off) Turn-off Delay Time
IC = 360A
Tf
Eon
Eoff
Fall Time
Turn-on Switching Energy ꢀ
Turn-off Switching Energy ꢀ
RG = 1.25ꢁ
17.2
14
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
IF = 400A
IF = 800A
IF = 400A
Tc = 80°C
Tj = 125°C
400
1.6
1.9
1.4
A
1.8
VF
Diode Forward Voltage
V
IF = 400A
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
180
220
1560
5800
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
VR = 400V
di/dt =800A/µs
IF = 400A
Qrr
nC
VR = 400V
di/dt =800A/µs
ꢀ Eon includes diode reverse recovery
ꢀ In accordance with JEDEC standard JESD24-1
2 - 6
APT website – http://www.advancedpower.com
APTGF350DU60
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.08
0.16
RthJC
Junction to Case
°C/W
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
VISOL
2500
V
TJ
TSTG
TC
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To heatsink
-40
-40
-40
3
150
125
100
5
3.5
280
°C
M6
M5
Torque Mounting torque
N.m
g
For terminals
2
Wt
Package Weight
Package outline
3 - 6
APT website – http://www.advancedpower.com
APTGF350DU60
Typical Performance Curve
Output characteristics (VGE=15V)
Output Characteristics (VGE=10V)
1200
1000
800
600
400
200
0
1200
1000
800
600
400
200
0
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
TJ=-55°C
TJ=-55°C
< 0.5% Duty cycle
TJ=25°C
TJ=25°C
TJ=125°C
TJ=125°C
0
1
2
3
4
0
1
2
3
4
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
Gate Charge
1200
1000
800
600
400
200
0
18
16
14
12
10
8
6
4
2
0
250µs Pulse Test
< 0.5% Duty cycle
IC = 360A
VCE=120V
TJ = 25°C
VCE=300V
VCE=480V
TJ=125°C
TJ=25°C
TJ=-55°C
0
200 400 600 800 1000 1200 1400
0
1
2
3
4
5
6
7
8
9
10
V
GE, Gate to Emitter Voltage (V)
Gate Charge (nC)
On state Voltage vs Junction Temperature
On state Voltage vs Gate to Emitter Volt.
4
3.5
3
8
7
6
5
4
3
2
1
0
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
Ic=720A
Ic=360A
Ic=720A
2.5
2
1.5
1
Ic=360A
Ic=180A
Ic=180A
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.5
0
6
8
10
12
14
16
-50 -25
0
25
50
75 100 125
VGE, Gate to Emitter Voltage (V)
TJ, Junction Temperature (°C)
Breakdown Voltage vs Junction Temp.
DC Collector Current vs Case Temperature
1.20
1.10
1.00
0.90
0.80
0.70
640
480
320
160
0
-50 -25
0
25
50
75 100 125
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TC, Case Temperature (°C)
4 - 6
APT website – http://www.advancedpower.com
APTGF350DU60
Turn-On Delay Time vs Collector Current
Turn-Off Delay Time vs Collector Current
35
30
25
20
15
250
200
150
100
50
VGE=15V,
TJ=125°C
VGE = 15V
Tj = 25°C
VGE=15V,
TJ=25°C
V
CE = 400V
RG = 1.25Ω
VCE = 400V
R
G = 1.25Ω
100
200
300
400
500
600
100
200
300
400
500
600
I
CE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
Current Fall Time vs Collector Current
80
60
40
20
0
80
60
40
20
0
VCE = 400V
RG = 1.25Ω
TJ = 125°C
VGE=15V,
TJ=125°C
TJ = 25°C
VCE = 400V, VGE = 15V, RG = 1.25Ω
100
200
300
400
500
600
100
200
300
400
500
600
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
32
24
20
16
12
8
VCE = 400V
TJ = 125°C
VCE = 400V
G = 1.25Ω
V
GE = 15V
R
24
16
8
RG = 1.25Ω
TJ=125°C,
GE=15V
TJ = 25°C
TJ=25°C,
VGE=15V
V
4
0
100
0
200
300
400
500
600
100
200
300
400
500
600
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Junction Temp.
Switching Energy Losses vs Gate Resistance
64
48
32
16
0
40
32
24
16
8
VCE = 400V
Eon, 720A
VCE = 400V
VGE = 15V
Eon, 720A
Eoff, 720A
V
GE = 15V
Eoff, 720A
Eoff, 360A
RG = 1.25Ω
TJ= 125°C
Eon, 360A
Eoff, 180A
Eon, 360A
Eoff, 360A
Eon, 180A
Eon, 180A
10
Eoff, 180A
25
0
0
2
4
6
8
12
0
50
75
100
125
Gate Resistance (Ohms)
TJ, Junction Temperature (°C)
5 - 6
APT website – http://www.advancedpower.com
APTGF350DU60
Capacitance vs Collector to Emitter Voltage
100000
Minimum Switching Safe Operating Area
1400
1200
1000
800
600
400
200
0
Cies
10000
1000
100
Coes
Cres
0
10
20
30
40
50
0
200
400
600
800
V
CE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.9
0.175
0.125
0.075
0.025
0.0125
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Operating Frequency vs Collector Current
180
160
140
120
100
80
VCE = 400V
D = 50%
RG = 1.25Ω
TJ = 125°C
60
40
20
0
50 100 150 200 250 300 350 400 450
IC, Collector Current (A)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 - 6
APT website – http://www.advancedpower.com
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