APTGT50X120RTP3 [ADPOW]
Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module; 输入整流桥+制动+ 3相桥沟道IGBT功率模块
| 型号： | APTGT50X120RTP3 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| 文件： | 总5页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT200H120
VCES = 1200V
Full - Bridge
Fast Trench + Field Stop IGBT®
IC = 200A @ Tc = 80°C
Application
•
•
•
•
Welding converters
VBUS
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Q1
Q3
G1
E1
G3
E3
Features
OUT1 OUT2
•
Fast Trench + Field Stop IGBT® Technology
-
-
-
-
-
-
-
-
Low voltage drop
Q2
Q4
Low tail current
G2
E2
G4
E4
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
0/VBUS
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
•
High level of integration
OUT1
OUT2
Benefits
G1
E1
G2
VBUS
0/VBUS
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
E2
E4
G4
E3
G3
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
280
200
400
±20
890
V
TC = 25°C
IC
Continuous Collector Current
A
TC = 80°C
TC = 25°C
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C 400A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 5
APT website – http://www.advancedpower.com
APTGT200H120
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
350
2.1
µA
Tj = 25°C
Tj = 125°C
1.4
5.0
1.7
2.0
5.8
VGE =15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
IC = 200A
VGE = VCE , IC = 3 mA
6.5
500
V
nA
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
14
nF
Output Capacitance
0.8
0.6
260
30
420
70
Reverse Transfer Capacitance
Inductive Switching (25°C)
VGE = ±15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
ns
VBus = 600V
IC = 200A
RG = 2.7Ω
Inductive Switching (125°C)
VGE = ±15V
290
50
520
90
ns
VBus = 600V
IC = 200A
Tf
Fall Time
RG = 2.7Ω
Eon
Eoff
Turn on Energy
Turn off Energy
20
20
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
VR=1200V
350
600
IRM
Maximum Reverse Leakage Current
µA
Tj = 125°C
IF(AV)
VF
Maximum Average Forward Current
Diode Forward Voltage
50% duty cycle
IF = 200A
Tc = 80°C
Tj = 25°C
Tj = 125°C
200
1.6
1.6
A
V
2.1
VGE = 0V
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
170
280
18
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 200A
VR = 600V
di/dt =2500A/µs
Qrr
µC
36
2 - 5
APT website – http://www.advancedpower.com
APTGT200H120
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.14
0.25
RthJC
Junction to Case
°C/W
V
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
3
150
125
100
5
3.5
280
°C
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
Wt
Package Weight
Package outline (dimensions in mm)
3 - 5
APT website – http://www.advancedpower.com
APTGT200H120
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
400
300
200
100
0
400
300
200
100
0
TJ = 125°C
TJ=25°C
VGE=17V
VGE=13V
VGE=15V
TJ=125°C
VGE=9V
0
1
2
3
4
0
1
2
VCE (V)
3
4
V
CE (V)
Energy losses vs Collector Current
Transfert Characteristics
50
40
30
20
10
0
400
350
300
250
200
150
100
50
VCE = 600V
VGE = 15V
Eon
Eoff
Er
TJ=25°C
R
G = 2.7Ω
TJ=125°C
TJ = 125°C
Eon
TJ=125°C
0
0
50 100 150 200 250 300 350 400
C (A)
5
6
7
8
9
10
11
12
I
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
50
450
400
350
300
250
200
150
100
50
VCE = 600V
GE =15V
C = 200A
TJ = 125°C
Eon
V
I
40
30
20
10
0
Eoff
Er
VGE=15V
TJ=125°C
RG=2.7 Ω
0
0
4
8
12
16
20
0
300
600
900
1200
1500
Gate Resistance (ohms)
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.16
0.14
0.12
0.1
IGBT
0.9
0.7
0.5
0.3
0.1
0.08
0.06
0.04
0.02
0
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 5
APT website – http://www.advancedpower.com
APTGT200H120
Operating Frequency vs Collector Current
Forward Characteristic of diode
60
50
40
30
20
10
0
400
350
300
250
200
150
100
50
VCE=600V
D=50%
TJ=25°C
RG=2.7Ω
TJ=125°C
Tc=75°C
ZCS
ZVS
TJ=125°C
Hard
switching
TJ=125°C
TJ=25°C
0
0
0.4
0.8
1.2
VF (V)
1.6
2
2.4
0
40
80 120 160 200 240 280
IC (A)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.3
0.25
0.2
0.15
0.1
0.05
0
0.9
0.7
Diode
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 - 5
APT website – http://www.advancedpower.com
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