APTM100H45SCT [ADPOW]
Full bridge Series & SiC parallel diodes MOSFET Power Module; 全桥系列和碳化硅二极管并联MOSFET功率模块
| 型号： | APTM100H45SCT |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Full bridge Series & SiC parallel diodes MOSFET Power Module |
| 文件： | 总7页 (文件大小：325K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM100H45SCT
Full bridge
VDSS = 1000V
RDSon = 450mΩ max @ Tj = 25°C
Series & SiC parallel diodes
MOSFET Power Module
ID = 18A @ Tc = 25°C
Application
•
•
•
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
VBUS
CR1A
CR3A
CR1B CR3B
OUT1 OUT2
Features
Q1
Q3
Q4
•
Power MOS 7® MOSFETs
G3
S3
G1
S1
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
CR2A
CR4A
Avalanche energy rated
CR2B CR4B
Q2
•
Parallel SiC Schottky Diode
G4
S4
G2
S2
-
Zero reverse recovery
-
-
-
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
0/VBUS
NTC1
NTC2
•
•
Kelvin source for easy drive
Very low stray inductance
-
-
Symmetrical design
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
•
•
G3
S3
G4
S4
OUT2
OUT1
Benefits
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
VBUS
0/VBUS
S1
G1
S2
G2
NTC2
NTC1
•
Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
Tc = 80°C
18
ID
Continuous Drain Current
A
14
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
72
±30
450
V
mΩ
W
PD
IAR
EAR
EAS
Maximum Power Dissipation
Tc = 25°C
357
18
50
2500
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1 – 7
APTM100H45SCT
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
VGS = 0V, ID = 250µA
VGS = 0V,VDS= 1000V
VGS = 0V,VDS= 800V
VGS = 10V, ID = 9A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage
1000
V
Tj = 25°C
Tj = 125°C
100
500
450
5
IDSS
Zero Gate Voltage Drain Current
µA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
mΩ
V
nA
3
IGS S
Gate – Source Leakage Current
±100
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
4350
VGS = 0V
VDS = 25V
f = 1MHz
pF
Output Capacitance
715
120
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
154
26
97
VGS = 10V
VBus = 500V
ID = 18A
nC
Gate – Source Charge
Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
10
12
121
35
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ns
ID = 18A
RG = 5Ω
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5Ω
Eon
Turn-on Switching Energy
383
380
627
451
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy X
Turn-on Switching Energy
Turn-off Switching Energy X
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5Ω
X In accordance with JEDEC standard JESD24-1.
Parallel SiC diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
Tj = 150°C
100
400
IRRM
Maximum Reverse Leakage Current
VR=1200V
µA
200 2000
IF(AV)
VF
Maximum Average Forward Current
Diode Forward Voltage
50% duty cycle Tc = 125°C
10
1.6
2.6
A
V
Tj = 25°C
1.8
3.0
IF = 10A
Tj = 175°C
IF = 10A, VR = 600V
di/dt =800A/µs
QC
Q
Total Capacitive Charge
Total Capacitance
28
nC
pF
f = 1MHz, VR = 200V
f = 1MHz, VR = 400V
90
66
APT website – http://www.advancedpower.com
2 – 7
APTM100H45SCT
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
50% duty cycle
IF = 30A
Min Typ Max Unit
IF(AV)
Maximum Average Forward Current
Tc = 85°C
30
1.1
1.4
0.9
A
1.15
VF
Diode Forward Voltage
IF = 60A
IF = 30A
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF = 30A
24
48
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
VR = 133V
di/dt = 200A/µs
IF = 30A
33
Qrr
nC
VR = 133V
di/dt = 200A/µs
150
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
0.35
RthJC
Junction to Case
°C/W
V
Series diode
1.2
1.5
Parallel diode
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
2500
-40
150
125
100
4.7
°C
TSTG
-40
-40
TC
Operating Case Temperature
Torque Mounting torque
To Heatsink
M5
N.m
g
Wt
Package Weight
160
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
68
kΩ
B25/85 T25 = 298.16 K
4080
K
R25
RT
=
T: Thermistor temperature
RT: Thermistor value at T
1
1
T
25 /85
exp B
−
T25
Package outline
APT website – http://www.advancedpower.com
3 – 7
APTM100H45SCT
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
0.35
0.3
0.9
0.7
0.25
0.2
0.5
0.3
0.15
0.1
0.1
0.05
0.05
0
0.00001
Single Pulse
0.01
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
7V
6.5V
VGS=15&8V
6V
TJ=25°C
5.5V
5V
TJ=125°C
TJ=-55°C
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
9 10
V
DS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1.3
1.2
1.1
1
20
18
16
14
12
10
8
Normalized to
GS=10V @ 9A
V
VGS=10V
VGS=20V
6
4
2
0
0.9
0.8
0
10
20
30
40
50
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4 – 7
APTM100H45SCT
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
VGS=10V
ID=9A
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100µs
limited by
RDSon
1ms
10
1
Single pulse
TJ=150°C
10ms
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
14
12
10
8
ID=18A
TJ=25°C
VDS=200V
VDS=500V
10000
1000
100
Ciss
VDS=800V
Coss
Crss
6
4
2
0
10
0
40
80
120
160
200
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
APT website – http://www.advancedpower.com
5 – 7
APTM100H45SCT
Delay Times vs Current
Rise and Fall times vs Current
60
50
40
30
20
10
0
160
140
120
100
80
VDS=667V
RG=5Ω
TJ=125°C
td(off)
L=100µH
tf
VDS=667V
RG=5Ω
TJ=125°C
L=100µH
60
tr
40
td(on)
20
0
5
10 15 20 25 30 35 40
5
10 15
20 25
30
35
40
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
2.5
2
1.5
1
VDS=667V
ID=18A
VDS=667V
Eoff
RG=5Ω
TJ=125°C
L=100µH
Eon
Eoff
TJ=125°C
L=100µH
1.5
1
0.5
0
Eon
0.5
0
5
10 15 20 25 30 35 40
0
5
10
15
20
25
30
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
100
10
300
250
200
150
100
50
VDS=667V
D=50%
RG=5Ω
TJ=125°C
TJ=150°C
TJ=25°C
1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
6
8
10
12
14
16
18
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
APT website – http://www.advancedpower.com
6 – 7
APTM100H45SCT
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.6
1.4
1.2
1
0.9
0.7
0.5
0.3
0.8
0.6
0.4
0.2
0
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
20
15
10
5
400
300
TJ=25°C
TJ=75°C
200
TJ=75°C
TJ=125°C
TJ=125°C
TJ=175°C
TJ=175°C
100
0
TJ=25°C
0
0
0.5
1
1.5
2
2.5
3
3.5
400 600 800 1000 1200 1400 1600
VR Reverse Voltage (V)
VF Forward Voltage (V)
Capacitance vs.Reverse Voltage
800
700
600
500
400
300
200
100
0
1
10
100
1000
VR Reverse Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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