APTM120TDU57P [ADPOW]
Triple dual common source MOSFET Power Module; 三重双共源MOSFET功率模块型号: | APTM120TDU57P |
厂家: | ADVANCED POWER TECHNOLOGY |
描述: | Triple dual common source MOSFET Power Module |
文件: | 总6页 (文件大小:316K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
APTM120TDU57P
VDSS = 1200V
Triple dual common source
MOSFET Power Module
RDSon = 570mΩ max @ Tj = 25°C
ID = 17A @ Tc = 25°C
D1
D3
D5
Application
•
•
•
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
G1
G3
G5
S1
S3
S5
S1/S2
S3/S4
S5/S6
Features
S2
S4
G4
S6
G6
•
Power MOS 7® MOSFETs
G2
-
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
D2
D4
D6
Avalanche energy rated
Very rugged
•
•
Kelvin source for easy drive
Very low stray inductance
-
-
Symmetrical design
Lead frames for power connections
•
High level of integration
Benefits
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
D 1
D 3
D 5
G1
S1
G3
S3
G5
S5
S1/S2
S3/S4
S5/S6
S2
G2
S4
G4
S6
•
•
Very low (12mm) profile
G6
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
D 2
D 4
D 6
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
17
ID
Continuous Drain Current
A
Tc = 80°C
13
IDM
VGS
RDSon
PD
Pulsed Drain current
68
Gate - Source Voltage
±30
570
390
V
mΩ
W
Drain - Source ON Resistance
Maximum Power Dissipation
Tc = 25°C
IAR
EAR
EAS
Avalanche current (repetitive and non repetitive)
22
A
Repetitive Avalanche Energy
50
mJ
Single Pulse Avalanche Energy
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1 – 6
APTM120TDU57P
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 250µA
VGS = 0V,VDS = 1200V
1200
V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V,VDS = 1000V Tj = 125°C
VGS = 10V, ID = 8.5A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
500
570
5
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
mΩ
V
nA
3
IGS S
Gate – Source Leakage Current
±100
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
5155
VGS = 0V
VDS = 25V
f = 1MHz
pF
Output Capacitance
770
130
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
187
24
120
20
15
160
45
VGS = 10V
VBus = 600V
ID = 17A
nC
Gate – Source Charge
Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ns
ID = 17A
RG = 5Ω
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 17A, RG = 5Ω
Eon
Turn-on Switching Energy X
990
685
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy Y
Turn-on Switching Energy X
Turn-off Switching Energy Y
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 17A, RG = 5Ω
1565
857
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IS
Continuous Source current
Tc = 25°C
Tc = 80°C
17
A
(Body diode)
13
1.3
10
VSD
Diode Forward Voltage
VGS = 0V, IS = - 17A
V
V/ns
dv/dt Peak Diode Recovery Z
IS = - 17A
trr
Reverse Recovery Time
Tj = 25°C
Tj = 25°C
1291
29
ns
VR = 600V
Qrr
Reverse Recovery Charge
µC
diS/dt = 100A/µs
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 17A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C
APT website – http://www.advancedpower.com
2 – 6
APTM120TDU57P
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC
VISOL
TJ
Junction to Case
IGBT
0.32 °C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
3
V
150
°C
TSTG
TC
125
100
5
Operating Case Temperature
Torque Mounting torque
To heatsink
M6
N.m
g
Wt
Package Weight
250
Package outline
5 places (3:1)
APT website – http://www.advancedpower.com
3 – 6
APTM120TDU57P
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
0.9
0.7
0.25
0.2
0.5
0.3
0.15
0.1
0.05
0
0.00001
0.1
0.05
Single Pulse
0.01
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
VDS > ID(on)xRDS (on)MAX
250µs pulse test @ < 0.5 duty cycle
VGS=15, 10 & 8V
7V
6.5V
6V
TJ=25°C
5.5V
5V
TJ=125°C
TJ=-55°C
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
9
VDS, Drain to Source Voltage (V)
V
GS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1.3
1.2
1.1
1
20
16
12
8
Normalized to
GS=10V @ 8.5A
V
VGS=10V
VGS=20V
4
0.9
0.8
0
0
10
20
30
40
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4 – 6
APTM120TDU57P
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
VGS=10V
ID=8.5A
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100µs
limited by RDSon
1ms
10
1
10ms
Single pulse
TJ=150°C
1200
1000
-50 -25
0
25 50 75 100 125 150
1
10
100
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
14
12
10
8
ID=17A
TJ=25°C
VDS=240V
VDS=600V
VDS=960V
10000
1000
100
Ciss
6
Coss
4
2
Crss
0
0
40
80
120 160 200 240
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
APT website – http://www.advancedpower.com
5 – 6
APTM120TDU57P
Delay Times vs Current
td(off)
Rise and Fall times vs Current
80
60
40
20
0
180
160
140
120
100
80
60
40
20
0
VDS=800V
tf
RG=5Ω
TJ=125°C
L=100µH
VDS=800V
RG=5Ω
TJ=125°C
L=100µH
tr
td(on)
5
10
15
20
25
30
35
5
10
15
20
25
30
35
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
4
3
2
1
0
3
2.5
2
VDS=800V
ID=17A
VDS=800V
RG=5Ω
Eoff
Eon
TJ=125°C
L=100µH
TJ=125°C
L=100µH
Eoff
1.5
1
Eon
0.5
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
100
10
225
200
175
150
125
100
75
50
25
0
ZCS
ZVS
TJ=150°C
TJ=25°C
VDS=800V
D=50%
RG=5Ω
TJ=125°C
Hard
TC=75°C
6
switching
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
4
8
12
14
16
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6 – 6
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