APTM20DUM10T [ADPOW]
Dual common source MOSFET Power Module; 双共源MOSFET功率模块
| 型号： | APTM20DUM10T |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Dual common source MOSFET Power Module |
| 文件： | 总6页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM20DUM10T
VDSS = 200V
Dual common source
RDSon = 10mꢀ max @ Tj = 25°C
MOSFET Power Module
ID = 175A @ Tc = 25°C
Application
Sꢁ AC Switches
Sꢁ Switched Mode Power Supplies
Sꢁ Uninterruptible Power Supplies
D1
D2
Q1
Q2
Features
Sꢁ Power MOS 7® MOSFETs
-
-
-
-
-
Low RDSon
G1
G2
Low input and Miller capacitance
Low gate charge
S1
S2
Avalanche energy rated
Very rugged
S
NTC1
NTC2
Sꢁ Kelvin source for easy drive
Sꢁ Very low stray inductance
-
-
Symmetrical design
Lead frames for power connections
Sꢁ Internal thermistor for temperature monitoring
Sꢁ High level of integration
G2
S2
D2
D2
Benefits
Sꢁ Outstanding performance at high frequency operation
Sꢁ Direct mounting to heatsink (isolated package)
Sꢁ Low junction to case thermal resistance
Sꢁ Solderable terminals both for power and signal for
easy PCB mounting
D1
S
S1
G1
S2
G2
NTC2
NTC1
Sꢁ Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
Continuous Drain Current
200
175
131
700
±30
10
V
Tc = 25°C
Tc = 80°C
ID
A
IDM
VGS
Pulsed Drain current
Gate - Source Voltage
V
mꢀ
W
RDSon
Drain - Source ON Resistance
Maximum Power Dissipation
PD
IAR
EAR
EAS
Tc = 25°C
694
89
50
2500
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 – 6
APT website – http://www.advancedpower.com
APTM20DUM10T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 375µA
200
V
VGS = 0V,VDS = 200V Tj = 25°C
VGS = 0V,VDS = 160V Tj = 125°C
VGS = 10V, ID = 87.5A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
150
750
10
IDSS
Zero Gate Voltage Drain Current
µA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
mꢀ
V
3
5
IGSS
Gate – Source Leakage Current
±150 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
13.7
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
4.36
0.19
Reverse Transfer Capacitance
Qg
Qgs
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
224
86
94
28
56
81
99
VGS = 10V
VBus = 100V
ID = 150A
nC
Qgd
Td(on)
Tr
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ns
Td(off) Turn-off Delay Time
Tf
ID = 150A
RG = 2.5ꢀ
Fall Time
Inductive switching @ 25°C
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy ꢀ
Turn-off Switching Energy ꢀ
Turn-on Switching Energy ꢀ
Turn-off Switching Energy ꢀ
926
910
V
GS = 15V, VBus = 133V
µJ
µJ
ID = 150A, RG = 2.5Ω
Inductive switching @ 125°C
1216
1062
V
GS = 15V, VBus = 133V
ID = 150A, RG = 2.5Ω
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Continuous Source current
Tc = 25°C
Tc = 80°C
175
IS
A
(Body diode)
131
1.3
5
VSD
Diode Forward Voltage
VGS = 0V, IS = - 150A
V
V/ns
ns
dv/dt Peak Diode Recovery ꢁ
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
284
6.1
IS = - 150A, VR = 133V
diS/dt = 200A/µs
µC
ꢀ Eon includes diode reverse recovery.
ꢀ In accordance with JEDEC standard JESD24-1.
ꢁ dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ? - 175A di/dt ? 700A/µs
VR ? VDSS Tj ? 150°C
2 – 6
APT website – http://www.advancedpower.com
APTM20DUM10T
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC
VISOL
TJ
Junction to Case
0.18 °C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
V
150
125
100
4.7
°C
TSTG
-40
TC
Operating Case Temperature
-40
Torque Mounting torque
To Heatsink
M5
N.m
g
Wt
Package Weight
160
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
68
kꢀ
B25/85 T25 = 298.16 K
4080
K
R25
RT
ꢃ
T: Thermistor temperature
RT: Thermistor value at T
!
1
2
3
ꢁ
.
/
/
1
1
T
25 / 85 ꢀ
exp B
ꢂ
"
ꢀ
T25
0
#
Package outline
3 – 6
APT website – http://www.advancedpower.com
APTM20DUM10T
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.2
0.18
0.16
0.14
0.12
0.1
0.9
0.7
0.5
0.08
0.06
0.04
0.02
0
0.3
Single Pulse
0.1
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
400
300
200
100
0
500
400
300
200
100
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
VGS=15&10V
9V
7.5V
7V
6.5V
6V
TJ=25°C
TJ=125°C
TJ=-55°C
5.5V
0
5
10
15
20
25
2
3
4
5
6
7
8
9
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.2
1.15
1.1
200
180
160
140
120
100
80
Normalized to
VGS=10V @ 87.5A
VGS=10V
1.05
1
60
40
20
0
VGS=20V
0.95
0.9
0
40
80
120 160 200 240
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
4 – 6
APT website – http://www.advancedpower.com
APTM20DUM10T
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID= 87.5A
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
100
10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
limited by
RDSon
100µs
1ms
10ms
DC line
Single pulse
TJ=150°C
1
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
TC, Case Temperature (°C)
VDS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
Gate Charge vs Gate to Source Voltage
12
VDS=40V
VDS=100V
ID=150A
TJ=25°C
10
8
Ciss
10000
1000
100
VDS=160V
Coss
6
4
2
Crss
0
0
50
100
150
200
250
0
10
20
30
40
50
V
DS, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 6
APT website – http://www.advancedpower.com
APTM20DUM10T
Delay Times vs Current
Rise and Fall times vs Current
160
140
120
100
80
90
80
70
60
50
40
30
20
10
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
tf
td(off)
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
tr
60
40
td(on)
20
0
0
50
100 150 200 250 300
0
50
100 150 200 250 300
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
3
2.5
2
2.5
VDS=133V
ID=150A
TJ=125°C
L=100µH
VDS=133V
RG=2.5Ω
Eon
2
1.5
1
Eoff
TJ=125°C
L=100µH
Eoff
Eon
1.5
1
0.5
0
0
50
100 150 200 250 300
0
5
10
15
20
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
350
300
250
200
150
100
50
1000
100
10
VDS=133V
D=50%
RG=2.5Ω
TJ=125°C
TJ=150°C
TJ=25°C
1
0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
20 40 60 80 100 120 140 160
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 – 6
APT website – http://www.advancedpower.com
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