APTM50SKM19 [ADPOW]
Buck chopper MOSFET Power Module; 降压斩波器的MOSFET功率模块
| 型号： | APTM50SKM19 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Buck chopper MOSFET Power Module |
| 文件： | 总6页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM50SKM19
VDSS = 500V
Buck chopper
RDSon = 19mꢀ max @ Tj = 25°C
MOSFET Power Module
ID = 163A @ Tc = 25°C
Application
Sꢁ AC and DC motor control
Sꢁ Switched Mode Power Supplies
Features
Sꢁ Power MOS 7® MOSFETs
-
-
-
-
-
Low RDSon
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Sꢁ Kelvin source for easy drive
Sꢁ Very low stray inductance
-
-
Symmetrical design
M5 power connectors
Sꢁ High level of integration
G1
VBUS
0/VBUS
OUT
S1
Benefits
Sꢁ Outstanding performance at high frequency operation
Sꢁ Direct mounting to heatsink (isolated package)
Sꢁ Low junction to case thermal resistance
Sꢁ Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
Continuous Drain Current
500
163
122
652
±30
19
V
Tc = 25°C
Tc = 80°C
ID
A
IDM
VGS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
V
mꢀ
W
RDSon
PD
IAR
EAR
EAS
Maximum Power Dissipation
Tc = 25°C
1136
46
50
2500
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 – 6
APT website – http://www.advancedpower.com
APTM50SKM19
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage
VGS = 0V, ID = 500µA
500
V
VGS = 0V,VDS = 500V Tj = 25°C
VGS = 0V,VDS = 400V Tj = 125°C
VGS = 10V, ID = 81.5A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
200
1000
19
IDSS
Zero Gate Voltage Drain Current
µA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
mꢀ
V
3
5
IGSS
Gate – Source Leakage Current
±200 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
22.4
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
4.8
0.36
Reverse Transfer Capacitance
Qg
Qgs
Total gate Charge
Gate – Source Charge
492
132
VGS = 10V
VBus = 250V
ID = 163A
nC
Qgd
Td(on)
Tr
Gate – Drain Charge
Turn-on Delay Time
Rise Time
260
18
35
87
77
Inductive switching @ 125°C
V
GS = 15V
VBus = 333V
ID = 163A
RG = 1ꢀ
ns
Td(off) Turn-off Delay Time
Tf
Fall Time
Inductive switching @ 25°C
Eon
Turn-on Switching Energy ꢀ
3020
2904
4964
3384
V
GS = 15V, VBus = 333V
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy ꢀ
Turn-on Switching Energy ꢀ
Turn-off Switching Energy ꢀ
ID = 163A, RG = 1Ω
Inductive switching @ 125°C
V
GS = 15V, VBus = 333V
ID = 163A, RG = 1Ω
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
50% duty cycle
IF = 120A
Min Typ Max Unit
IF(AV)
Maximum Average Forward Current
Tc = 70°C
120
1.6
1.9
1.4
A
1.8
VF
Diode Forward Voltage
IF = 240A
V
IF = 120A
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF = 120A
130
170
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
VR = 400V
di/dt = 400A/µs
IF = 120A
440
Qrr
VR = 400V
nC
1840
di/dt = 400A/µs
ꢀ Eon includes diode reverse recovery.
ꢀ In accordance with JEDEC standard JESD24-1.
2 – 6
APT website – http://www.advancedpower.com
APTM50SKM19
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
Diode
0.11
0.46
RthJC
Junction to Case
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
2500
-40
-40
-40
3
150
125
100
5
°C
TSTG
TC
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
3.5
280
Wt
Package Weight
Package outline
3 – 6
APT website – http://www.advancedpower.com
APTM50SKM19
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1
0.9
0.7
0.5
0.08
0.06
0.04
0.02
0
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
500
400
300
200
100
0
700
600
500
400
300
200
100
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
8V
VGS=10&15V
7.5V
7V
6.5V
6V
TJ=25°C
TJ=125°C
5.5V
TJ=-55°C
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
V
DS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
RDS(on) vs Drain Current
DC Drain Current vs Case Temperature
180
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
Normalized to
VGS=10V @ 81.5A
VGS=10V
160
140
120
100
80
60
40
20
VGS=20V
0
0
100
200
300
400
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
4 – 6
APT website – http://www.advancedpower.com
APTM50SKM19
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID=81.5A
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
1.2
1.1
1.0
0.9
0.8
0.7
0.6
limited by RDSon
100
10
1
100µs
1ms
10ms
Single pulse
TJ=150°C
100ms
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
TC, Case Temperature (°C)
VDS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source Voltage
14
100000
10000
1000
100
VCE=100V
VCE=250V
ID=163A
TJ=25°C
Ciss
12
10
8
Coss
Crss
VCE=400V
6
4
2
10
0
0
10
20
30
40
50
0
80 160 240 320 400 480 560 640
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
5 – 6
APT website – http://www.advancedpower.com
APTM50SKM19
Delay Times vs Current
Rise and Fall times vs Current
100
80
60
40
20
0
120
100
80
60
40
20
0
td(off)
VDS=333V
RG=1Ω
TJ=125°C
L=100µH
tf
VDS=333V
RG=1Ω
TJ=125°C
L=100µH
td(on)
tr
20
60
100 140 180 220 260
20
60
100 140 180 220 260
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
16
10
8
VDS=333V
ID=163A
TJ=125°C
VDS=333V
RG=1Ω
14
12
10
8
Eon
Eoff
TJ=125°C
L=100µH
L=100µH
6
Eoff
Eon
4
6
4
2
2
0
0
0
2.5
5
7.5
10
12.5
20
60
100 140 180 220 260
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
100
10
400
350
300
250
200
150
100
50
VDS=333V
D=50%
RG=1Ω
TJ=150°C
TJ=125°C
TJ=25°C
0
1
0
20 40 60 80 100 120 140
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
V
SD, Source to Drain Voltage (V)
ID, Drain Current (A)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 – 6
APT website – http://www.advancedpower.com
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