ARF461A [ADPOW]
N-CHANNEL ENHANCEMENT MODE; N沟道增强模式
| 型号： | ARF461A |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | N-CHANNEL ENHANCEMENT MODE |
| 文件： | 总4页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
D
S
ARF461A
ARF461B
G
TO-247
Common
Source
RF POWER MOSFETs
N-CHANNEL ENHANCEMENT MODE
250V 150W
65MHz
The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
optimized for both linear and high efficiency classes of operation.
• Specified 250 Volt, 40.68 MHz Characteristics:
• Low Cost Common Source RF Package.
• Low Vth thermal coefficient.
•
•
•
Output Power = 150 Watts.
Gain = 13dB (Class AB)
Efficiency = 75% (Class C)
• Low Thermal Resistance.
• Optimized SOA for Superior Ruggedness.
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
ARF461A/B
1000
UNIT
VDSS
VDGO
ID
Drain-Source Voltage
Volts
Drain-Gate Voltage
1000
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
6.5
Amps
Volts
Watts
°C/W
VGS
±30
PD
Total Power Dissipation @ TC = 25°C
Junction to Case
250
RqJC
TJ,TSTG
TL
0.50
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
UNIT
Symbol
BVDSS
MIN
TYP
MAX
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
1000
Volts
1
VDS(ON)
On State Drain Voltage (ID(ON) = 3.25A, VGS = 10V)
6.5
25
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 25V, ID = 3.25A)
Gate Threshold Voltage (VDS = VGS, ID = 50mA)
IDSS
µA
250
±100
IGSS
gfs
nA
3
3
4
mhos
Volts
VGS(TH)
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
DYNAMIC CHARACTERISTICS
ARF461A/B
Symbol
Ciss
Coss
Crss
td(on)
tr
Characteristic
Test Conditions
GS = 0V
MIN
TYP
1700
175
50
MAX
UNIT
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
V
pF
VDS = 50V
f = 1 MHz
8
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 1.6W
5
ns
td(off)
tf
Turn-off Delay Time
Fall Time
21
10.1
FUNCTIONAL CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
13
TYP
15
MAX
UNIT
dB
GPS
Common Source Amplifier Power Gain
Drain Efficiency
f = 40.68 MHz
VGS = 0V
VDD = 250V
h
70
75
%
Pout = 150W
y
Electrical Ruggedness VSWR 10:1
No Degradation in Output Power
1
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
5000
C
C
iss
1000
500
oss
C
rss
100
50
10
.1
.5
1
5
10
50
200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
8
6
4
2
0
26
T
= -55°C
100uS
J
OPERATION HERE
LIMITED BY R (ON)
DS
10
5
V
> I (ON) x
R
(ON)MAX.
DS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
DS
D
1mS
10mS
1
.5
100mS
DC
T
= +125°C
T
= -55°C
6
J
J
T
T
=+25°C
=+150°C
C
J
T
= +25°C
2
SINGLE PULSE
J
.1
0
4
8
1
10
100
1000
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
ARF461A/B
1.2
1.1
1.0
0.9
0.8
0.7
25
20
15
10
5
V
=15, 10, 8 & 6.5V
GS
6V
5.5V
5V
4.5V
4V
0
-50 -25
0
25 50 75 100 125 150
1
5
10
15
20
25
30
TC, CASE TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5, Typical Threshold Voltage vs Temperature
Figure 6, Typical Output Characteristics
0.6
D=0.5
0.2
0.1
0.1
0.05
0.05
0.02
Note:
0.01
0.01
t
1
SINGLE PULSE
0.005
t
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
J
DM
θJC
C
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
ZOL (Ω)
Z
(Ω)
in
2.0
13.5
27
40
65
20.4 - j 9.6
2.1 - j 6.4
.50 - j 2.3
.20 - j 0.4
.46 + j 2.0
148 - j 20
84 - j 74
36 - j 63
19 - j 48
7.7 - j 30
Z
- Gate shunted with 25Ω
IDQ = 100mA
in
ZOL - Conjugate of optimum load for 150 Watts output at V = 250V
dd
ARF461A/B
L4
+
-
C1 -- 1800pF + 1000pF 100V chips
mounted at gate lead
250V
+
-
Bias
0 - 12V
C7
C8
C2-C5 -- Arco 463 Mica trimmer
C6-C8 -- .1 mF 500V ceramic chip
C9 -- 2200 pF 500 V chip
L1 -- 4t #20 AWG .25"ID .3 "L ~80nH
L2 -- 7t #16 AWG .4" ID .5"L ~335nH
L3 -- 25t #24 AWG .25"ID ~2.2uH
L4 -- VK200-4B ferrite choke 3uH
R1-R2 -- 51 Ohm 0.5W Carbon
DUT = ARF461A/B
L3
C6
R1
C9
C4
RF
Input
RF
Output
C5
L1
L2
C3
DUT
C1
R2
C2
40.68 MHz Test Circuit
TO-247 Package Outline
Top View
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
Dimensions in Millimeters and (Inches)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
NOTE: These two parts comprise a symmetric pair of RF
power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.
20.80 (.819)
21.46 (.845)
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
Device
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
ARF - A
Gate
ARF - B
Drain
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Source
Drain
Source
Gate
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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